Works (11)

Updated: July 5th, 2023 16:03

2000 journal article

Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

IEEE Transactions on Electron Devices, 47(10), 1864–1872.

By: S. Williams n, K. Kim n & W. Holton n

author keywords: MOSFETs; simulation; quantization
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies
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7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref
Added: August 6, 2018

2000 journal article

NMR quantum computation with indirectly coupled gates

Physical Review A, 62(2), 4.

Contributors: D. Collins n, K. Kim n, W. Holton n, H. Sierzputowska-Gracz n & E. Stejskal n

topics (OpenAlex): Quantum Computing Algorithms and Architecture; Quantum Information and Cryptography; Quantum and electron transport phenomena
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2000 chapter

Overview of semiconductor devices

In Y. Nishi & R. Doering (Eds.), Handbook of semiconductor manufacturing technology. New York: Marcel Dekker.

By: W. Holten, J. Hauser, K. Kim & W. Lynch

Ed(s): . Y. Nishi & R. Doering

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Scalable solid-state quantum computer based on quantum dot pillar structures

Physical Review B, 61(11), 7526–7535.

By: G. Sanders n, K. Kim n & W. Holton n

Contributors: G. Sanders n, K. Kim n & W. Holton n

topics (OpenAlex): Quantum and electron transport phenomena; Quantum Computing Algorithms and Architecture; Quantum Information and Cryptography
TL;DR: This work investigates an optically driven quantum computer based on electric dipole transitions within coupled single-electron quantum dots, and indicates that a single gate electrode can be used to localize a single electron in each of the quantum dots. (via Semantic Scholar)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1999 journal article

Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

IEEE Transactions on Electron Devices, 46(8), 1760–1767.

By: S. Williams n, K. Kim n, M. Littlejohn n & W. Holton n

Contributors: S. Williams n, K. Kim n, M. Littlejohn n & W. Holton n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1999 journal article

Optically driven quantum-dot quantum computer

Physical Review A, 60(5), 4146–4149.

By: G. Sanders n, K. Kim n & W. Holton n

Contributors: G. Sanders n, K. Kim n & W. Holton n

topics (OpenAlex): Quantum and electron transport phenomena; Quantum Information and Cryptography; Quantum Computing Algorithms and Architecture
TL;DR: The pillar array constitutes an ensemble of quantum computers that operate simultaneously and consists of an array of free standing pillars with source and drain electrodes at the top and bottom of the pillar and a stacked series of asymmetric GaAs/AlGaAs quantum wells arrayed along the axis. (via Semantic Scholar)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1999 journal article

Quantum computing with complex instruction sets

Physical Review A, 59(2), 1098–1101.

By: G. Sanders n, K. Kim n & W. Holton n

Contributors: G. Sanders n, K. Kim n & W. Holton n

topics (OpenAlex): Quantum Computing Algorithms and Architecture; Quantum Information and Cryptography; Quantum-Dot Cellular Automata
TL;DR: This work proposes an approach in which quantum control techniques combined with flexible electromagnetic pulse shaping are used to replace several universal gates with a single instruction, and shows that this complex instruction set approach can significantly reduce the time required to perform quantum computations. (via Semantic Scholar)
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Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1998 journal article

A new device design methodology for manufacturability

IEEE Transactions on Electron Devices, 45(3), 634–642.

By: J. Lu n, W. Holton n, J. Fenner n, S. Williams n, K. Kim n, A. Hartford n, D. Chen n, K. Roze n, M. Littlejohn n

Contributors: J. Lu n, W. Holton n, J. Fenner n, S. Williams n, K. Kim n, A. Hartford n, D. Chen n, K. Roze n, M. Littlejohn n

topics (OpenAlex): VLSI and FPGA Design Techniques; Advancements in Semiconductor Devices and Circuit Design; Probabilistic and Robust Engineering Design
TL;DR: The goals for DFM in TCAD simulations are defined and a formal procedure for achieving an optimized result (ODFM) is outlined and new design of experiments (DOE), weighted least squares modeling and multiple-objective mean-variance optimization methods are developed as significant parts of the new ODFM procedure. (via Semantic Scholar)
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2. Zero Hunger (Web of Science)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1998 journal article

Deutsch-Jozsa algorithm as a test of quantum computation

Physical Review A, 58(3), R1633–R1636.

By: D. Collins n, K. Kim n & W. Holton n

Contributors: D. Collins n, K. Kim n & W. Holton n

topics (OpenAlex): Quantum Computing Algorithms and Architecture; Quantum Information and Cryptography; Quantum Mechanics and Applications
TL;DR: A redundancy in the existing Deutsch-Jozsa quantum algorithm is removed and a refined algorithm, which reduces the size of the register and simplifies the function evaluation is proposed, which allows a simpler analysis of the use of entanglement between the qubits. (via Semantic Scholar)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1998 journal article

Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

IEEE Transactions on Electron Devices, 45(1), 254–260.

By: S. Williams n, R. Hulfachor n, K. Kim n, M. Littlejohn n & W. Holton n

Contributors: S. Williams n, R. Hulfachor n, K. Kim n, M. Littlejohn n & W. Holton n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1998 journal article

Temperature dependence of impact ionization coefficients in p-Si

Journal of Applied Physics, 83(9), 4988–4990.

By: K. Roze n, N. Bannov n, K. Kim n, W. Holton n & M. Littlejohn n

Contributors: K. Roze n, N. Bannov n, K. Kim n, W. Holton n & M. Littlejohn n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Electrostatic Discharge in Electronics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

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