@article{williams_kim_holton_2000, title={Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET}, volume={47}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.870564}, DOI={10.1109/16.870564}, abstractNote={We develop a self-consistent, ensemble Monte Carlo device simulator that is capable of modeling channel carrier quantization and polysilicon gate depletion in nanometer-scale n-MOSFETs. A key feature is a unique bandstructure expression for quantized electrons. Carrier quantization and polysilicon depletion are examined against experimental capacitance-voltage (C-V) data. Calculated drain current values are also compared with measured current-voltage data for an n-MOSFET with an effective channel length (L/sub eff/) of 90 nm. Finally, the full capabilities of the Monte Carlo simulator are used to investigate the effects of carrier confinement in a L/sub eff/=25 nm n-MOSFET. In particular, the mechanisms affecting the subband populations of quantized electrons in the highly nonuniform channel region are investigated. Simulation results indicate that the occupation levels in the subbands are a strong function of the internal electric field configurations and two-dimensional (2-D) carrier scattering.}, number={10}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Williams, S.C. and Kim, K.W. and Holton, W.C.}, year={2000}, pages={1864–1872} }
 @article{collins_kim_holton_sierzputowska-gracz_stejskal_2000, title={NMR quantum computation with indirectly coupled gates}, volume={62}, ISSN={1050-2947 1094-1622}, url={http://dx.doi.org/10.1103/PhysRevA.62.022304}, DOI={10.1103/physreva.62.022304}, abstractNote={An NMR realization of a two-qubit quantum gate which processes quantum information indirectly via couplings to a spectator qubit is presented in the context of the Deutsch-Jozsa algorithm. This enables a successful comprehensive NMR implementation of the Deutsch-Jozsa algorithm for functions with three argument bits and demonstrates a technique essential for multi-qubit quantum computation.}, number={2}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Collins, David and Kim, K. W. and Holton, W. C. and Sierzputowska-Gracz, H. and Stejskal, E. O.}, year={2000}, month={Jul} }
 @inbook{holten_hauser_kim_lynch_2000, title={Overview of semiconductor devices}, booktitle={Handbook of semiconductor manufacturing technology}, publisher={New York: Marcel Dekker}, author={Holten, W. C. and Hauser, J. R. and Kim, K. W. and Lynch, W. T.}, editor={Y. Nishi and Doering, R.Editors}, year={2000} }
 @article{sanders_kim_holton_2000, title={Scalable solid-state quantum computer based on quantum dot pillar structures}, volume={61}, ISSN={0163-1829 1095-3795}, url={http://dx.doi.org/10.1103/PhysRevB.61.7526}, DOI={10.1103/physrevb.61.7526}, abstractNote={We investigate an optically driven quantum computer based on electric dipole transitions within coupled single-electron quantum dots. Our quantum register consists of a free-standing n-type pillar containing a series of pairwise coupled asymmetric quantum dots, each with a slightly different energy structure, and with grounding leads at the top and bottom of the pillar. Asymmetric quantum wells confine electrons along the pillar axis, and a negatively biased gate wrapped around the center of the pillar allows for electrostatic confinement in the radial direction. We self-consistently solve coupled Schr\"odinger and Poisson equations and develop a design for a three-qubit quantum register. Our results indicate that a single gate electrode can be used to localize a single electron in each of the quantum dots. Adjacent dots are strongly coupled by electric dipole-dipole interactions arising from the dot asymmetry, thus enabling rapid computation rates. The dots are tailored to minimize dephasing due to spontaneous emission and phonon scattering and to maximize the number of computation cycles. The design is scalable to a large number of qubits.}, number={11}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Sanders, G. D. and Kim, K. W. and Holton, W. C.}, year={2000}, month={Mar}, pages={7526–7535} }
 @article{williams_kim_littlejohn_holton_1999, title={Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's}, volume={46}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.777167}, DOI={10.1109/16.777167}, abstractNote={In this paper, we employ a comprehensive Monte Carlo-based simulation method to model hot-electron injection, to predict induced device degradation, and to simulate and compare the performance of two double-gate fully depleted silicon-on-insulator n-MOSFET's (one with a lightly-doped channel and one with a heavily-doped channel) and a similar lightly-doped single-gate design. All three designs have an effective channel length of 80 nm and a silicon layer thickness of 25 mm. Monte Carlo simulations predict a spatial retardation between the locations of peak hot-electron injection into the front and back oxides. Since the observed shift is a significant portion of the channel length, the retardation effect greatly influences induced degradation in otherwise well-designed SOI devices. This effect may signal an important consideration for sub-100-nm design strategy. Simulations were also conducted to compare transistor performance against a key figure of merit. Evaluation of reliability and performance results indicate that the double-gate design with a lightly doped channel offers the best tradeoff in immunity to hot-electron-induced degradation and performance.}, number={8}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Williams, S.C. and Kim, K.W. and Littlejohn, M.A. and Holton, W.C.}, year={1999}, pages={1760–1767} }
 @article{sanders_kim_holton_1999, title={Optically driven quantum-dot quantum computer}, volume={60}, ISSN={1050-2947 1094-1622}, url={http://dx.doi.org/10.1103/PhysRevA.60.4146}, DOI={10.1103/PhysRevA.60.4146}, abstractNote={We propose a design for a quantum computer that builds on n-type SET structures reported by Tarucha et al. (1996). Our design consists of an array of free standing pillars with source and drain electrodes at the top and bottom of the pillar and a stacked series of asymmetric GaAs/AlGaAs quantum wells arrayed along the axis. By applying a negative bias to the cylindrical gate electrode, carriers near the surface are depleted. The parabolic electrostatic potential provides confinement in the radial direction while bandgap discontinuities in the quantum wells provide confinement along the pillar axis. In operating as a quantum computer the source and drain are grounded and the number of electrons in each dot are set to one by adjusting the gate voltage. Qubits are encoded in the ground state and first excited state of the quantum dot electrons. The pillar array constitutes an ensemble of quantum computers that operate simultaneously.}, number={5}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Sanders, G. D. and Kim, K. W. and Holton, W. C.}, year={1999}, month={Nov}, pages={4146–4149} }
 @article{sanders_kim_holton_1999, title={Quantum computing with complex instruction sets}, volume={59}, ISSN={1050-2947 1094-1622}, url={http://dx.doi.org/10.1103/PhysRevA.59.1098}, DOI={10.1103/PhysRevA.59.1098}, abstractNote={In most current quantum computers simple electromagnetic pulses implement computations using a minimal set of universal gates. We propose an approach in which quantum control techniques combined with flexible electromagnetic pulse shaping are used to replace several universal gates with a single instruction. We show that this complex instruction set approach can significantly reduce the time required to perform quantum computations.}, number={2}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Sanders, G. D. and Kim, K. W. and Holton, W. C.}, year={1999}, month={Feb}, pages={1098–1101} }
 @article{lu_holton_fenner_williams_kim_hartford_chen_roze_littlejohn_1998, title={A new device design methodology for manufacturability}, volume={45}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.661225}, DOI={10.1109/16.661225}, abstractNote={As future technology generations for integrated circuits continue to "shrink", TCAD tools must be made more central to manufacturing issues; thus, yield optimization and design for manufacturing (DFM) should be addressed integrally with performance and reliability when using TCAD during the initial product design. This paper defines the goals for DFM in TCAD simulations and outlines a formal procedure for achieving an optimized result (ODFM). New design of experiments (DOE), weighted least squares modeling and multiple-objective mean-variance optimization methods are developed as significant parts of the new ODFM procedure. Examples of designing a 0.18-/spl mu/m MOSFET device are given to show the impact of device design procedures on device performance distributions and sensitivity variance profiles.}, number={3}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Lu, J.-C. and Holton, W.C. and Fenner, J.S. and Williams, S.C. and Kim, K.W. and Hartford, A.H. and Chen, D. and Roze, K. and Littlejohn, M.A.}, year={1998}, month={Mar}, pages={634–642} }
 @article{collins_kim_holton_1998, title={Deutsch-Jozsa algorithm as a test of quantum computation}, volume={58}, ISSN={1050-2947 1094-1622}, url={http://dx.doi.org/10.1103/PhysRevA.58.R1633}, DOI={10.1103/PhysRevA.58.R1633}, abstractNote={A redundancy in the existing Deutsch-Jozsa quantum algorithm is removed and a refined algorithm, which reduces the size of the register and simplifies the function evaluation, is proposed. The refined version allows a simpler analysis of the use of entanglement between the qubits in the algorithm and provides criteria for deciding when the Deutsch-Jozsa algorithm constitutes a meaningful test of quantum computation.}, number={3}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Collins, David and Kim, K. W. and Holton, W. C.}, year={1998}, month={Sep}, pages={R1633–R1636} }
 @article{williams_hulfachor_kim_littlejohn_holton_1998, title={Scaling trends for device performance and reliability in channel-engineered n-MOSFETs}, volume={45}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.658839}, DOI={10.1109/16.658839}, abstractNote={Channel-engineered MOSFETs with retrograde doping profiles are expected to provide increased carrier mobility and immunity to short channel effects. However, the physical mechanisms responsible for device performance of retrograde designs in the deep-submicron regime are not fully understood, and general device scaling trends are not well documented. Also, little effort has been devoted to the study of hot-electron-induced device degradation. In this paper, we employ a comprehensive simulation methodology to investigate scaling and device performance trends in channel-engineered n-MOSFETs. The method features an advanced ensemble Monte Carlo device simulator to extract hot-carrier reliability for super-steep-retrograde and more conventional silicon n-MOS designs with effective channel lengths scaled from 800 to 100 nm. With decreasing channel length, our simulations indicate that the retrograde design shows increasingly less total hot-electron injection into the oxide than the conventional design. However, near the 100-nm regime, the retrograde design provides less current drive, loses its advantage of higher carrier mobility, and exhibits much greater sensitivity to hot-electron-induced interface states when compared to the conventional device.}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Williams, S.C. and Hulfachor, R.B. and Kim, K.W. and Littlejohn, M.A. and Holton, W.C.}, year={1998}, pages={254–260} }
 @article{roze_bannov_kim_holton_littlejohn_1998, title={Temperature dependence of impact ionization coefficients in p-Si}, volume={83}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.367303}, DOI={10.1063/1.367303}, abstractNote={An efficient full-band Monte Carlo program for high-energy carrier transport is employed to investigate hole impact ionization in p-Si for a range of electric fields up to 800 kV/cm and lattice temperatures between 77 and 450 K. An empirical expression is developed for the temperature dependence of ionization coefficients. The results are compared with those obtained from existing models. The empirical model agrees well with experiments and other numerically intensive models, providing a means to incorporate these effects into other device simulators and reliability models.}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Roze, K. and Bannov, N. A. and Kim, K. W. and Holton, W. C. and Littlejohn, M. A.}, year={1998}, month={May}, pages={4988–4990} }