William Holton

Williams, S. C., Kim, K. W., & Holton, W. C. (2000). Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET. IEEE Transactions on Electron Devices, 47(10), 1864–1872. https://doi.org/10.1109/16.870564

Collins, D., Kim, K. W., Holton, W. C., Sierzputowska-Gracz, H., & Stejskal, E. O. (2000). NMR quantum computation with indirectly coupled gates. Physical Review A, 62(2). https://doi.org/10.1103/physreva.62.022304

Holten, W. C., Hauser, J. R., Kim, K. W., & Lynch, W. T. (2000). Overview of semiconductor devices. In Y. Nishi & R. Doering (Eds.), Handbook of semiconductor manufacturing technology. New York: Marcel Dekker.

Sanders, G. D., Kim, K. W., & Holton, W. C. (2000). Scalable solid-state quantum computer based on quantum dot pillar structures. Physical Review B, 61(11), 7526–7535. https://doi.org/10.1103/physrevb.61.7526

Williams, S. C., Kim, K. W., Littlejohn, M. A., & Holton, W. C. (1999). Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's. IEEE Transactions on Electron Devices, 46(8), 1760–1767. https://doi.org/10.1109/16.777167

Sanders, G. D., Kim, K. W., & Holton, W. C. (1999). Optically driven quantum-dot quantum computer. Physical Review A, 60(5), 4146–4149. https://doi.org/10.1103/PhysRevA.60.4146

Sanders, G. D., Kim, K. W., & Holton, W. C. (1999). Quantum computing with complex instruction sets. Physical Review A, 59(2), 1098–1101. https://doi.org/10.1103/PhysRevA.59.1098

Lu, J.-C., Holton, W. C., Fenner, J. S., Williams, S. C., Kim, K. W., Hartford, A. H., … Littlejohn, M. A. (1998). A new device design methodology for manufacturability. IEEE Transactions on Electron Devices, 45(3), 634–642. https://doi.org/10.1109/16.661225

Collins, D., Kim, K. W., & Holton, W. C. (1998). Deutsch-Jozsa algorithm as a test of quantum computation. Physical Review A, 58(3), R1633–R1636. https://doi.org/10.1103/PhysRevA.58.R1633

Williams, S. C., Hulfachor, R. B., Kim, K. W., Littlejohn, M. A., & Holton, W. C. (1998). Scaling trends for device performance and reliability in channel-engineered n-MOSFETs. IEEE Transactions on Electron Devices, 45(1), 254–260. https://doi.org/10.1109/16.658839

Roze, K., Bannov, N. A., Kim, K. W., Holton, W. C., & Littlejohn, M. A. (1998). Temperature dependence of impact ionization coefficients in p-Si. Journal of Applied Physics, 83(9), 4988–4990. https://doi.org/10.1063/1.367303