@article{berkutov_andrievskii_beliayev_kolesnichenko_2023, title={Quantum effects in silicon-germanium p-type heterostructures with quantum wells of different widths}, volume={49}, ISSN={["1090-6517"]}, DOI={10.1063/10.0016476}, abstractNote={The magneto-quantum and quantum interference effects in a two-dimensional gas of p-type charge carriers are studied for three quantum wells made of practically pure germanium in a Si0.6Ge0.4/Si0.2Ge0.8/Si0.6Ge0.4 heterostructure. The quantum well widths were 8 nm for sample I, 19.5 nm for sample II, and 25.6 nm for sample III. The dependences of resistance on the magnetic field for all samples exhibit Shubnikov–de Haas oscillations. Their analysis made it possible to calculate the kinetic characteristics of charge carriers for the cases of one (sample I) and two occupied subbands (samples II and III). In the region of weak magnetic fields (B < 0.1 T), the effect of weak localization of holes was revealed, which determines the negative magnetoresistance and the increase in resistance with decreasing temperature. The manifestation of the charge carriers interaction effect at various temperatures and magnetic fields is discovered and analyzed. A transition from the diffusion mode of manifestation of the quantum correction to the intermediate, and then to the ballistic mode is observed. In all regions, the behavior of the quantum correction due to the charge carriers interaction effect is in good agreement with modern theoretical predictions. The temperature dependences of the hole-phonon relaxation time are calculated. In weak magnetic fields, with an increase in the temperature of the 2D system, a transition from the “partial inelasticity” mode, characterized by the dependence τhph−1∝T2, to the small-angle scattering mode, described by the relation τhph−1∝T5, takes place. In stronger magnetic fields for samples with two occupied subbands, the dependence τhph−1∝T3was observed. Possible explanations for this dependence are presented.}, number={1}, journal={LOW TEMPERATURE PHYSICS}, author={Berkutov, I. B. and Andrievskii, V. V. and Beliayev, E. Yu. and Kolesnichenko, Yu. A.}, year={2023}, month={Jan}, pages={59–70} }
 @article{korobkina_berkutov_golub_huffman_hickman_leung_medlin_morano_rao_teander_et al._2022, title={Growing solid deuterium for UCN production}, volume={24}, ISSN={["1477-2655"]}, DOI={10.3233/JNR-220010}, abstractNote={We have experimentally studied growing a large (about 1 liter) ortho-deuterium crystal in a real UCN source cryostat and recorded the growing process optically using a camera. The best quality was observed when growing the crystal directly from a vapor phase. The crystal was grown at different mass flows of deuterium and annealed at different temperatures. Optimum conditions were found for both, obtaining an optically transparent crystal and cooling it down with minimal damage. We found that the quality, final shape and changes during annealing of the crystal are very much dependent on the temperature profile of the cryostat walls.}, number={2}, journal={JOURNAL OF NEUTRON RESEARCH}, author={Korobkina, Ekaterina and Berkutov, Igor and Golub, Robert and Huffman, Paul and Hickman, Clark and Leung, Kent and Medlin, Graham and Morano, Matthew J. and Rao, Thomas and Teander, Cole and et al.}, year={2022}, pages={179–191} }
 @article{berkutov_andrievskii_kolesnichenko_mironov_2019, title={Quantum effects in a germanium quantum well with ultrahigh mobility of charge carrier}, volume={45}, ISSN={["1090-6517"]}, DOI={10.1063/10.0000126}, abstractNote={Quantum effects in p-type Si0.2Ge0.8/Ge/Si0.2Ge0.8 heterostructure with an extremely high mobility of charge carriers μH = 1367000 cm2/(V ⋅ s) have been comprehensively studied. An analysis of Shubnikov–de Haas oscillations yielded effective mass of charge carriers, which proved to be very low, m* = 0.062m0, and the value of fluctuations of hole density along the channel δp = 3.5 ⋅ 109 cm–2. The fractional Hall effect (filling numbers 8/3, 7/3, 5/3, 4/3) observed at temperatures up to 5 K has been discovered in strong magnetic fields. The studies of quantum interference effects related to weak localization and electron-electron interaction between charge carriers, which have been conducted in such a high-mobility system for the first time, enabled calculation of spin splitting Δ = 1.07 meV and the Fermi-liquid coupling constant F0σ=−0.12, which agree with results obtained earlier.}, number={11}, journal={LOW TEMPERATURE PHYSICS}, author={Berkutov, I. B. and Andrievskii, V. V. and Kolesnichenko, Yu. A. and Mironov, O. A.}, year={2019}, month={Nov}, pages={1202–1208} }
 @article{ovsiienko_matzui_berkutov_mirzoiev_len_prylutskyy_prokopov_ritter_2018, title={Magnetoresistance of graphite intercalated with cobalt}, volume={53}, ISSN={["1573-4803"]}, DOI={10.1007/s10853-017-1511-x}, number={1}, journal={JOURNAL OF MATERIALS SCIENCE}, author={Ovsiienko, Iryna and Matzui, Lyudmila and Berkutov, Igor and Mirzoiev, Il'gar and Len, Tetyana and Prylutskyy, Yuriy and Prokopov, Oleksandr and Ritter, Uwe}, year={2018}, month={Jan}, pages={716–726} }
 @article{len_ovsiienko_matzui_berkutov_mirzoiev_gnida_kunitskyi_2017, title={Magnetoresistance of modified carbon nanotubes}, volume={9}, number={1}, journal={Journal of Nano- and Electronic Physics}, author={Len, T. A. and Ovsiienko, I. V. and Matzui, L. Y. and Berkutov, I. B. and Mirzoiev, I. G. and Gnida, D. and Kunitskyi, Y. A.}, year={2017} }