Works (3)

Updated: April 11th, 2023 10:13

2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra n & A. Huang n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

By: W. Sung n, A. Huang n, B. Baliga n, I. Ji n, H. Ke n & D. Hopkins n

co-author countries: United States of America 🇺🇸

Event: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269–272.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra n, A. Huang n & Y. Choi*

co-author countries: Korea (Republic of) 🇰🇷 United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

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