Works (3)

2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

In WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (pp. 147–149).

By: I. Ji, B. Lee, S. Wang, V. Misra & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

In Proceedings of the international symposium on power semiconductor (pp. 257–260).

By: W. Sung, A. Huang, B. Baliga, I. Ji, H. Ke & D. Hopkins

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

In Proceedings of the international symposium on power semiconductor (pp. 269–272).

By: I. Ji, B. Lee, S. Wang, V. Misra, A. Huang & Y. Choi

Source: NC State University Libraries
Added: August 6, 2018