2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149.

By: I. Ji, B. Lee, S. Wang, V. Misra & A. Huang

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

Event: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269–272.

By: I. Ji, B. Lee, S. Wang, V. Misra, A. Huang & Y. Choi*

Sources: NC State University Libraries, ORCID
Added: August 6, 2018