In Hwan Ji

Works (3)

Updated: April 11th, 2023 10:13

2015 article

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

Ji, I.-H., Lee, B., Wang, S., Misra, V., & Huang, A. Q. (2015, November 1). WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 147–149.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra n  & A. Huang n

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

By: W. Sung n, A. Huang n, B. Baliga n, I. Ji n, H. Ke n & D. Hopkins n 

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Multilevel Inverters and Converters
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2014 article

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Ji, I.-H., Lee, B., Wang, S., Misra, V., Huang, A. Q., & Choi, Y.-H. (2014, June 1). Proceedings of the International Symposium on Power Semiconductor, pp. 269–272.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra n , A. Huang n & Y. Choi*

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

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