@article{hany_yang_phan_kim_2021, title={Thallium lead iodide (TlPbI3) single crystal inorganic perovskite: Electrical and optical characterization for gamma radiation detection}, volume={121}, url={https://doi.org/10.1016/j.mssp.2020.105392}, DOI={10.1016/j.mssp.2020.105392}, abstractNote={TlPbI3 has been suggested as a candidate semiconductor material for room temperature gamma ray and charged particle detection, motivated by its wide bandgap (2.17–2.3 eV), and high density (6.6 gm/cm3) required for low noise and high intrinsic detection efficiency. In this work, we studied the optical and electronic properties of Bridgeman-grown TlPbI3 single crystal using ultraviolet–visible–infrared absorption spectroscopy, low temperature cathodoluminescence, temperature dependent current-voltage measurements, and charge carriers’ mobility-lifetime measurements. The fabricated Ag/TlPbI3/Ag device showed Ohmic behavior in temperatures ranging between −7 °C to 22 °C and exhibited high resistivity (~2 × 1011 Ω.cm at RT). Fermi level pinning at 0.72 eV above valence band minimum or below conduction band maximum was calculated from the temperature dependent resistivity measurement, and the 2.17 eV bandgap was determined from ultraviolet–visible–infrared absorption spectroscopy. The cathodoluminescence spectrum of TlPbI3 was resolved to two peaks at 1.45 eV and 1.48 eV indicating deep level traps. The mobility-lifetime product was estimated to be 3.43 × 10−5 cm2/V and 2.29 × 10−6 cm2/V for electrons and holes, respectively. Possible interpretations are presented suggesting the presence of vacancy type defects. Our results provide new essential information for developing such a new class of room temperature radiation detector material for a wide range of applications.}, journal={Materials Science in Semiconductor Processing}, publisher={Elsevier BV}, author={Hany, Ibrahim and Yang, Ge and Phan, Quoc Vuong and Kim, Hong Joo}, year={2021}, month={Jan}, pages={105392} }
 @article{hany_kanies_yang_2020, title={Controllable solute-diffusion gel-growth of BCHT: an effective approach towards large functional material single crystal synthesis}, volume={22}, url={https://doi.org/10.1039/D0CE00800A}, DOI={10.1039/D0CE00800A}, abstractNote={An underutilized, but highly advantageous, method of growing functional-single-crystals, the gel-growth technique, is highlighted. Large nonlinear optical crystals, BCHT, were grown and their dehydration phase-transformation to β-BTC were studied.}, number={36}, journal={CrystEngComm}, publisher={Royal Society of Chemistry (RSC)}, author={Hany, Ibrahim and Kanies, Bryant and Yang, Ge}, year={2020}, pages={5954–5960} }
 @article{hany_yang_chung_2020, title={Fast X-ray detectors based on bulk beta-Ga2O3 (Fe)}, volume={55}, ISSN={["1573-4803"]}, url={https://doi.org/10.1007/s10853-020-04665-9}, DOI={10.1007/s10853-020-04665-9}, number={22}, journal={JOURNAL OF MATERIALS SCIENCE}, publisher={Springer Science and Business Media LLC}, author={Hany, Ibrahim and Yang, Ge and Chung, Ching-Chang}, year={2020}, month={Aug}, pages={9461–9469} }
 @article{hany_yang_zhou_sun_gundogdu_seyitliyev_danilov_castellano_sun_vetter_et al._2019, title={Low temperature cathodoluminescence study of Fe-doped β-Ga2O3}, volume={257}, ISSN={0167-577X}, url={http://dx.doi.org/10.1016/j.matlet.2019.126744}, DOI={10.1016/j.matlet.2019.126744}, abstractNote={Optical and electrical properties along the b-axis of Fe-doped β-Ga2O3 were studied using low temperature cathodoluminescence (CL) spectroscopy, optical absorption spectroscopy and current-voltage (IV) measurements. The optical absorption spectroscopy showed an absorption edge without near edge shoulder and the corresponding optical bandgap was calculated to be 4.45 eV using direct band gap treatment. The temperature dependent CL measurements exhibited a strong blue to ultraviolet (UV) band composed of multiple low intensity peaks in the blue range, a main blue peak, a main UV peak, and a weak UV band from the as-grown Fe-doped β-Ga2O3. After a controlled annealing in air, the emissions changed to a red to near infrared (R-NIR) band with two sharp peaks and an UV band that is resolved at room temperature to three UV broad peaks. The R-NIR sharp peaks from the air-annealed sample were ascribed to incorporation of nitrogen during air annealing.}, journal={Materials Letters}, publisher={Elsevier BV}, author={Hany, Ibrahim and Yang, Ge and Zhou, Chuanzhen Elaine and Sun, Cheng and Gundogdu, Kenan and Seyitliyev, Dovletgeldi and Danilov, Evgeny O. and Castellano, Felix N. and Sun, Dali and Vetter, Eric and et al.}, year={2019}, month={Dec}, pages={126744} }
 @article{zhang_yang_zhou_chung_hany_2019, title={Optical and electrical properties of all-inorganic Cs2AgBiBr6 double perovskite single crystals}, volume={9}, ISSN={["2046-2069"]}, url={https://doi.org/10.1039/C9RA04045E}, DOI={10.1039/C9RA04045E}, abstractNote={In this work, we explored the possibility of using Cs2AgBiBr6, a double perovskite crystal, for radiation detection. Cs2AgBiBr6 crystals were grown using the solution growth technique. The resistivity of the as-grown Cs2AgBiBr6 crystal is larger than 1010 Ω cm, which is high enough to ensure low leakage current for fabrication of semiconductor radiation detectors. Using the temperature-dependent resistivity measurements, we estimated that the Fermi level is at 0.788 eV above the valence band and the material is a p-type semiconductor. From the low-temperature cathodoluminescence measurements, two near band gap energies at 1.917 eV and 2.054 eV were revealed.}, number={41}, journal={RSC ADVANCES}, publisher={Royal Society of Chemistry (RSC)}, author={Zhang, Zheng and Yang, Ge and Zhou, Chuanzhen and Chung, Ching-Chang and Hany, Ibrahim}, year={2019}, month={Aug}, pages={23459–23464} }