@article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, DOI={10.1016/j.jcrysgro.2018.07.012}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, pages={389–394} }
 @article{sarkar_mita_reddy_klump_kaess_tweedie_bryan_bryan_kirste_kohn_et al._2017, title={High free carrier concentration in p-GaN grown on AlN substrates}, volume={111}, DOI={10.1063/1.4995239}, number={3}, journal={Applied Physics Letters}, author={Sarkar, B. and Mita, S. and Reddy, P. and Klump, A. and Kaess, F. and Tweedie, J. and Bryan, I. and Bryan, Z. and Kirste, R. and Kohn, E. and et al.}, year={2017} }
 @article{haidet_sarkar_reddy_bryan_bryan_kirste_collazo_sitar_2017, title={Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN}, volume={56}, DOI={10.7567/jjap.56.100302}, number={10}, journal={Japanese Journal of Applied Physics}, author={Haidet, B. B. and Sarkar, B. and Reddy, P. and Bryan, I. and Bryan, Z. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{shelton_bryan_paisley_sachet_ihlefeld_lavrik_collazo_sitar_maria_2017, title={Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy}, volume={5}, DOI={10.1063/1.4993840}, number={9}, journal={APL Materials}, author={Shelton, C. T. and Bryan, I. and Paisley, E. A. and Sachet, E. and Ihlefeld, J. F. and Lavrik, N. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2017} }
 @article{alden_guo_kirste_kaess_bryan_troha_bagal_reddy_hernandez-balderrama_franke_et al._2016, title={Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications}, volume={108}, DOI={10.1063/1.4955033}, number={26}, journal={Applied Physics Letters}, author={Alden, D. and Guo, W. and Kirste, R. and Kaess, F. and Bryan, I. and Troha, T. and Bagal, A. and Reddy, P. and Hernandez-Balderrama, L. H. and Franke, A. and et al.}, year={2016} }
 @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, DOI={10.1063/1.4967397}, number={18}, journal={Journal of Applied Physics}, author={Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and et al.}, year={2016} }
 @inproceedings{franke_hoffmann_hernandez-balderrama_kaess_bryan_washiyama_bobea_tweedie_kirste_gerhold_et al._2016, title={Strain engineered high reflectivity DBRs in the deep UV}, volume={9748}, DOI={10.1117/12.2211700}, booktitle={Gallium nitride materials and devices xi}, author={Franke, A. and Hoffmann, P. and Hernandez-Balderrama, L. and Kaess, F. and Bryan, I. and Washiyama, S. and Bobea, M. and Tweedie, J. and Kirste, R. and Gerhold, M. and et al.}, year={2016} }
 @article{bryan_bryan_mita_rice_tweedie_collazo_sitar_2016, title={Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides}, volume={438}, DOI={10.1016/j.jcrysgro.2015.12.022}, journal={Journal of Crystal Growth}, author={Bryan, I. and Bryan, Z. and Mita, S. and Rice, A. and Tweedie, J. and Collazo, R. and Sitar, Z.}, year={2016}, pages={81–89} }
 @article{bryan_bryan_mita_rice_hussey_shelton_tweedie_maria_collazo_sitar_2016, title={The role of surface kinetics on composition and quality of AlGaN}, volume={451}, DOI={10.1016/j.jcrysgro.2016.06.055}, journal={Journal of Crystal Growth}, author={Bryan, I. and Bryan, Z. and Mita, S. and Rice, A. and Hussey, L. and Shelton, C. and Tweedie, J. and Maria, J. P. and Collazo, R. and Sitar, Z.}, year={2016}, pages={65–71} }
 @article{troha_rigler_alden_bryan_guo_kirste_mita_gerhold_collazo_sitar_et al._2016, title={UV second harmonic generation in AlN waveguides with modal phase matching}, volume={6}, DOI={10.1364/ome.6.002014}, number={6}, journal={Optical Materials Express}, author={Troha, T. and Rigler, M. and Alden, D. and Bryan, I. and Guo, W. and Kirste, R. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and et al.}, year={2016}, pages={2014–2023} }
 @article{haidet_bryan_reddy_bryan_collazo_sitar_2015, title={A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN}, volume={117}, DOI={10.1063/1.4923062}, number={24}, journal={Journal of Applied Physics}, author={Haidet, B. B. and Bryan, I. and Reddy, P. and Bryan, Z. and Collazo, R. and Sitar, Z.}, year={2015} }
 @article{bain_hoffmann_bryan_collazo_ivanisevic_2015, title={Adsorption and adhesion of common serum proteins to nanotextured gallium nitride}, volume={7}, DOI={10.1039/c4nr06353h}, number={6}, journal={Nanoscale}, author={Bain, L. E. and Hoffmann, M. P. and Bryan, I. and Collazo, R. and Ivanisevic, A.}, year={2015}, pages={2360–2365} }
 @article{reddy_bryan_bryan_tweedie_washiyama_kirste_mita_collazo_sitar_2015, title={Charge neutrality levels, barrier heights, and band offsets at polar AlGaN}, volume={107}, DOI={10.1063/1.4930026}, number={9}, journal={Applied Physics Letters}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Tweedie, J. and Washiyama, S. and Kirste, R. and Mita, S. and Collazo, R. and Sitar, Z.}, year={2015} }
 @article{kirste_rohrbaugh_bryan_bryan_collazo_ivanisevic_2015, title={Electronic biosensors based on III-nitride semiconductors}, volume={8}, DOI={10.1146/annurev-anchem-071114-040247}, journal={Annual review of analytical chemistry, vol 8}, author={Kirste, R. and Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Collazo, R. and Ivanisevic, A.}, year={2015}, pages={149–169} }
 @article{hoffmann_kirste_mita_guo_tweedie_bobea_bryan_bryan_gerhold_collazo_et al._2015, title={Growth and characterization of AlxGa1-xN lateral polarity structures}, volume={212}, DOI={10.1002/pssa.201431740}, number={5}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Hoffmann, M. P. and Kirste, R. and Mita, S. and Guo, W. and Tweedie, J. and Bobea, M. and Bryan, I. and Bryan, Z. and Gerhold, M. and Collazo, R. and et al.}, year={2015}, pages={1039–1042} }
 @article{bryan_bryan_xie_mita_sitar_collazo_2015, title={High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates}, volume={106}, DOI={10.1063/1.4917540}, number={14}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Xie, J. Q. and Mita, S. and Sitar, Z. and Collazo, R.}, year={2015} }
 @article{rohrbaugh_bryan_bryan_collazo_ivanisevic_2015, title={Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties}, volume={5}, DOI={10.1063/1.4930192}, number={9}, journal={AIP Advances}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Collazo, R. and Ivanisevic, A.}, year={2015} }
 @article{bryan_bryan_mita_tweedie_sitar_collazo_2015, title={Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates}, volume={106}, DOI={10.1063/1.4922385}, number={23}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Mita, S. and Tweedie, J. and Sitar, Z. and Collazo, R.}, year={2015} }
 @article{rohrbaugh_bryan_bryan_arellano_collazo_ivanisevic_2014, title={AlGaN/GaN field effect transistors functionalized with recognition peptides}, volume={105}, number={13}, journal={Applied Physics Letters}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Arellano, C. and Collazo, R. and Ivanisevic, A.}, year={2014} }
 @inproceedings{rohrbaugh_bryan_bryan_collazo_ivanisevic_2014, title={Effects of environmental exposure on stability and conductance poly-l-lysine coated AlGaN/GaN high electron mobility transistors}, volume={61}, DOI={10.1149/06104.0147ecst}, number={4}, booktitle={Wide bandgap semiconductor materials and devices 15}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Collazo, R. and Ivanisevic, A.}, year={2014}, pages={147–151} }
 @article{bryan_bryan_bobea_hussey_kirste_sitar_collazo_2014, title={Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films}, volume={115}, DOI={10.1063/1.4870284}, number={13}, journal={Journal of Applied Physics}, author={Bryan, Z. and Bryan, I. and Bobea, M. and Hussey, L. and Kirste, R. and Sitar, Z. and Collazo, R.}, year={2014} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, DOI={10.1063/1.4903058}, number={22}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Gaddy, B. E. and Reddy, P. and Hussey, L. and Bobea, M. and Guo, W. and Hoffmann, M. and Kirste, R. and Tweedie, J. and et al.}, year={2014} }
 @article{sochacki_bryan_amilusik_bobea_fijalkowski_bryan_lucznik_collazo_weyher_kucharski_et al._2014, title={HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties}, volume={394}, DOI={10.1016/j.jcrysgro.2014.02.020}, journal={Journal of Crystal Growth}, author={Sochacki, T. and Bryan, Z. and Amilusik, M. and Bobea, M. and Fijalkowski, M. and Bryan, I. and Lucznik, B. and Collazo, R. and Weyher, J. L. and Kucharski, R. and et al.}, year={2014}, pages={55–60} }
 @article{bryan_bryan_bobea_hussey_kirste_collazo_sitar_2014, title={Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition}, volume={116}, DOI={10.1063/1.4897233}, number={13}, journal={Journal of Applied Physics}, author={Bryan, I. and Bryan, Z. and Bobea, M. and Hussey, L. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014} }
 @inproceedings{kirste_mita_hoffmann_hussey_guo_bryan_bryan_tweedie_gerhold_hoffmann_et al._2014, title={Properties of AlN based lateral polarity structures}, volume={11}, DOI={10.1002/pssc.201300287}, number={2}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 2}, author={Kirste, R. and Mita, S. and Hoffmann, M. P. and Hussey, L. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Gerhold, M. and Hoffmann, A. and et al.}, year={2014}, pages={261–264} }
 @article{hussey_white_kirste_mita_bryan_guo_osterman_haidet_bryan_bobea_et al._2014, title={Sapphire decomposition and inversion domains in N-polar aluminum nitride}, volume={104}, DOI={10.1063/1.4862982}, number={3}, journal={Applied Physics Letters}, author={Hussey, L. and White, R. M. and Kirste, R. and Mita, S. and Bryan, I. and Guo, W. and Osterman, K. and Haidet, B. and Bryan, Z. and Bobea, M. and et al.}, year={2014} }
 @article{guo_bryan_xie_kirste_mita_bryan_hussey_bobea_haidet_gerhold_et al._2014, title={Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates}, volume={115}, DOI={10.1063/1.4868678}, number={10}, journal={Journal of Applied Physics}, author={Guo, W. and Bryan, Z. and Xie, J. Q. and Kirste, R. and Mita, S. and Bryan, I. and Hussey, L. and Bobea, M. and Haidet, B. and Gerhold, M. and et al.}, year={2014} }
 @inproceedings{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, DOI={10.1002/pssc.201300401}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 3-4}, author={Bryan, I. and Akouala, C. R. and Tweedie, J. and Bryan, Z. and Rice, A. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014}, pages={454–457} }
 @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, DOI={10.1063/1.4896377}, number={12}, journal={Journal of Applied Physics}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Guo, W. and Hussey, L. and Collazo, R. and Sitar, Z.}, year={2014} }
 @article{gaddy_bryan_bryan_xie_dalmau_moody_kumagai_nagashima_kubota_kinoshita_et al._2014, title={The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN}, volume={104}, DOI={10.1063/1.4878657}, number={20}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and Kinoshita, T. and et al.}, year={2014} }
 @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, DOI={10.1016/j.jcrysgro.2012.12.141}, journal={Journal of Crystal Growth}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, pages={20–25} }
 @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi level control of point defects during growth of Mg-doped GaN}, volume={42}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={Journal of Electronic Materials}, author={Bryan, Z. and Hoffmann, M. and Tweedie, J. and Kirste, R. and Callsen, G. and Bryan, I. and Rice, A. and Bobea, M. and Mita, S. and Xie, J. Q. and et al.}, year={2013}, pages={815–819} }
 @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, DOI={10.1063/1.4848555}, number={24}, journal={Applied Physics Letters}, author={Kirste, R. and Hoffmann, M. P. and Sachet, E. and Bobea, M. and Bryan, Z. and Bryan, I. and Nenstiel, C. and Hoffmann, A. and Maria, J. P. and Collazo, R. and et al.}, year={2013} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Kinase detection with gallium nitride based high electron mobility transistors}, volume={103}, number={1}, journal={Applied Physics Letters}, author={Makowski, M. S. and Bryan, I. and Sitar, Z. and Arellano, C. and Xie, J. Q. and Collazo, R. and Ivanisevic, A.}, year={2013} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Kinase detection with gallium nitride based high electron mobility transistors (vol 103, 013701, 2013)}, volume={103}, DOI={10.1063/1.4819200}, number={8}, journal={Applied Physics Letters}, author={Makowski, M. S. and Bryan, I. and Sitar, Z. and Arellano, C. and Xie, J. Q. and Collazo, R. and Ivanisevic, A.}, year={2013} }
 @article{bryan_rice_hussey_bryan_bobea_mita_xie_kirste_collazo_sitar_2013, title={Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4792694}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Rice, A. and Hussey, L. and Bryan, Z. and Bobea, M. and Mita, S. and Xie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2013} }
 @article{gaddy_bryan_bryan_kirste_xie_dalmau_moody_kumagai_nagashima_kubota_et al._2013, title={Vacancy compensation and related donor-acceptor pair recombination in bulk AlN}, volume={103}, DOI={10.1063/1.4824731}, number={16}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Kirste, R. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and et al.}, year={2013} }
 @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, DOI={10.1063/1.4798352}, number={12}, journal={Journal of Applied Physics}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013} }
 @article{hussey_mita_xie_guo_akouala_rajan_bryan_collazo_sitar_2012, title={Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition}, volume={112}, DOI={10.1063/1.4768526}, number={11}, journal={Journal of Applied Physics}, author={Hussey, L. and Mita, S. and Xie, J. Q. and Guo, W. and Akouala, C. R. and Rajan, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2012} }
 @article{guo_kirste_bryan_bryan_gerhold_collazo_sitar, title={Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes}, volume={117}, number={11}, journal={Journal of Applied Physics}, author={Guo, W. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Collazo, R. and Sitar, Z.} }
 @inproceedings{alden_bryan_gaddy_bryan_callsen_koukitu_kumagai_hoffmann_irving_sitar_et al., title={On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates}, volume={72}, number={5}, booktitle={Wide bandgap semiconductor materials and devices 17}, author={Alden, D. and Bryan, Z. and Gaddy, B. E. and Bryan, I. and Callsen, G. and Koukitu, A. and Kumagai, Y. and Hoffmann, A. and Irving, D. L. and Sitar, Z. and et al.}, pages={31–40} }
 @inproceedings{hoffmann_tweedie_kirste_bryan_bryan_gerhold_sitar_collazo, title={Point defect management in GaN by Fermi-level control during growth}, volume={8986}, booktitle={Gallium nitride materials and devices ix}, author={Hoffmann, M. P. and Tweedie, J. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Sitar, Z. and Collazo, R.} }