@article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2018.07.012}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, month={Feb}, pages={389–394} }
 @article{sarkar_mita_reddy_klump_kaess_tweedie_bryan_bryan_kirste_kohn_et al._2017, title={High free carrier concentration in p-GaN grown on AlN substrates}, volume={111}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4995239}, DOI={10.1063/1.4995239}, number={3}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Sarkar, Biplab and Mita, Seiji and Reddy, Pramod and Klump, Andrew and Kaess, Felix and Tweedie, James and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Kohn, Erhard and et al.}, year={2017}, month={Jul} }
 @article{haidet_sarkar_reddy_bryan_bryan_kirste_collazo_sitar_2017, title={Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN}, volume={56}, ISSN={["1347-4065"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-85030640149&partnerID=MN8TOARS}, DOI={10.7567/jjap.56.100302}, number={10}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, publisher={Japan Society of Applied Physics}, author={Haidet, Brian B. and Sarkar, Biplab and Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Oct} }
 @article{shelton_bryan_paisley_sachet_ihlefeld_lavrik_collazo_sitar_maria_2017, title={Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy}, volume={5}, ISSN={["2166-532X"]}, DOI={10.1063/1.4993840}, number={9}, journal={APL MATERIALS}, author={Shelton, Christopher T. and Bryan, Isaac and Paisley, Elizabeth A. and Sachet, Edward and Ihlefeld, Jon F. and Lavrik, Nick and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2017}, month={Sep} }
 @article{alden_guo_kirste_kaess_bryan_troha_bagal_reddy_hernandez-balderrama_franke_et al._2016, title={Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications}, volume={108}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4955033}, DOI={10.1063/1.4955033}, number={26}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Alden, D. and Guo, W. and Kirste, R. and Kaess, F. and Bryan, I. and Troha, T. and Bagal, A. and Reddy, P. and Hernandez-Balderrama, Luis H. and Franke, A. and et al.}, year={2016}, month={Jun} }
 @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/1.4967397}, DOI={10.1063/1.4967397}, number={18}, journal={JOURNAL OF APPLIED PHYSICS}, publisher={AIP Publishing}, author={Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and et al.}, year={2016}, month={Nov} }
 @article{franke_hoffmann_hernandez-balderrama_kaess_bryan_washiyama_bobea_tweedie_kirste_gerhold_et al._2016, title={Strain engineered high reflectivity DBRs in the deep UV}, volume={9748}, ISSN={["1996-756X"]}, DOI={10.1117/12.2211700}, journal={GALLIUM NITRIDE MATERIALS AND DEVICES XI}, author={Franke, A. and Hoffmann, P. and Hernandez-Balderrama, L. and Kaess, F. and Bryan, I. and Washiyama, S. and Bobea, M. and Tweedie, J. and Kirste, R. and Gerhold, M. and et al.}, year={2016} }
 @article{bryan_bryan_mita_rice_tweedie_collazo_sitar_2016, title={Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides}, volume={438}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2015.12.022}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bryan, Isaac and Bryan, Zachary and Mita, Seiji and Rice, Anthony and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2016}, month={Mar}, pages={81–89} }
 @article{bryan_bryan_mita_rice_hussey_shelton_tweedie_maria_collazo_sitar_2016, title={The role of surface kinetics on composition and quality of AlGaN}, volume={451}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2016.06.055}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bryan, Isaac and Bryan, Zachary and Mita, Seiji and Rice, Anthony and Hussey, Lindsay and Shelton, Christopher and Tweedie, James and Maria, Jon-Paul and Collazo, Ramon and Sitar, Zlatko}, year={2016}, month={Oct}, pages={65–71} }
 @article{troha_rigler_alden_bryan_guo_kirste_mita_gerhold_collazo_sitar_et al._2016, title={UV second harmonic generation in AlN waveguides with modal phase matching}, volume={6}, ISSN={["2159-3930"]}, DOI={10.1364/ome.6.002014}, number={6}, journal={OPTICAL MATERIALS EXPRESS}, author={Troha, T. and Rigler, M. and Alden, D. and Bryan, I. and Guo, W. and Kirste, R. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and et al.}, year={2016}, month={Jun}, pages={2014–2023} }
 @article{haidet_bryan_reddy_bryan_collazo_sitar_2015, title={A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN}, volume={117}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/1.4923062}, DOI={10.1063/1.4923062}, number={24}, journal={JOURNAL OF APPLIED PHYSICS}, publisher={AIP Publishing}, author={Haidet, Brian B. and Bryan, Isaac and Reddy, Pramod and Bryan, Zachary and Collazo, Ramon and Sitar, Zlatko}, year={2015}, month={Jun} }
 @article{bain_hoffmann_bryan_collazo_ivanisevic_2015, title={Adsorption and adhesion of common serum proteins to nanotextured gallium nitride}, volume={7}, ISSN={["2040-3372"]}, DOI={10.1039/c4nr06353h}, number={6}, journal={NANOSCALE}, author={Bain, Lauren E. and Hoffmann, Marc P. and Bryan, Isaac and Collazo, Ramon and Ivanisevic, Albena}, year={2015}, pages={2360–2365} }
 @article{reddy_bryan_bryan_tweedie_washiyama_kirste_mita_collazo_sitar_2015, title={Charge neutrality levels, barrier heights, and band offsets at polar AlGaN}, volume={107}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4930026}, DOI={10.1063/1.4930026}, number={9}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Tweedie, James and Washiyama, Shun and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2015}, month={Aug} }
 @article{kirste_rohrbaugh_bryan_bryan_collazo_ivanisevic_2015, title={Electronic Biosensors Based on III-Nitride Semiconductors}, volume={8}, ISSN={["1936-1327"]}, DOI={10.1146/annurev-anchem-071114-040247}, journal={ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8}, author={Kirste, Ronny and Rohrbaugh, Nathaniel and Bryan, Isaac and Bryan, Zachary and Collazo, Ramon and Ivanisevic, Albena}, year={2015}, pages={149–169} }
 @article{hoffmann_kirste_mita_guo_tweedie_bobea_bryan_bryan_gerhold_collazo_et al._2015, title={Growth and characterization of AlxGa1-xN lateral polarity structures}, volume={212}, ISSN={["1862-6319"]}, DOI={10.1002/pssa.201431740}, number={5}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Hoffmann, Marc Patrick and Kirste, Ronny and Mita, Seiji and Guo, Wei and Tweedie, James and Bobea, Milena and Bryan, Isaac and Bryan, Zachary and Gerhold, Michael and Collazo, Ramon and et al.}, year={2015}, month={May}, pages={1039–1042} }
 @article{bryan_bryan_xie_mita_sitar_collazo_2015, title={High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates}, volume={106}, ISSN={["1077-3118"]}, DOI={10.1063/1.4917540}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Bryan, Zachary and Bryan, Isaac and Xie, Jinqiao and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon}, year={2015}, month={Apr} }
 @article{rohrbaugh_bryan_bryan_collazo_ivanisevic_2015, title={Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties}, volume={5}, ISSN={["2158-3226"]}, DOI={10.1063/1.4930192}, number={9}, journal={AIP ADVANCES}, author={Rohrbaugh, Nathaniel and Bryan, Isaac and Bryan, Zachary and Collazo, Ramon and Ivanisevic, Albena}, year={2015}, month={Sep} }
 @article{bryan_bryan_mita_tweedie_sitar_collazo_2015, title={Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates}, volume={106}, ISSN={["1077-3118"]}, DOI={10.1063/1.4922385}, number={23}, journal={APPLIED PHYSICS LETTERS}, author={Bryan, Zachary and Bryan, Isaac and Mita, Seiji and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2015}, month={Jun} }
 @article{rohrbaugh_bryan_bryan_arellano_collazo_ivanisevic_2014, title={AlGaN/GaN field effect transistors functionalized with recognition peptides}, volume={105}, number={13}, journal={Applied Physics Letters}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Arellano, C. and Collazo, R. and Ivanisevic, A.}, year={2014} }
 @article{rohrbaugh_bryan_bryan_collazo_ivanisevic_2014, title={Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors}, volume={61}, ISSN={["1938-6737"]}, DOI={10.1149/06104.0147ecst}, number={4}, journal={WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Collazo, R. and Ivanisevic, A.}, year={2014}, pages={147–151} }
 @article{bryan_bryan_bobea_hussey_kirste_sitar_collazo_2014, title={Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films}, volume={115}, ISSN={["1089-7550"]}, DOI={10.1063/1.4870284}, number={13}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bryan, Zachary and Bryan, Isaac and Bobea, Milena and Hussey, Lindsay and Kirste, Ronny and Sitar, Zlatko and Collazo, Ramon}, year={2014}, month={Apr} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4903058}, DOI={10.1063/1.4903058}, number={22}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Bryan, Zachary and Bryan, Isaac and Gaddy, Benjamin E. and Reddy, Pramod and Hussey, Lindsay and Bobea, Milena and Guo, Wei and Hoffmann, Marc and Kirste, Ronny and Tweedie, James and et al.}, year={2014}, month={Dec} }
 @article{sochacki_bryan_amilusik_bobea_fijalkowski_bryan_lucznik_collazo_weyher_kucharski_et al._2014, title={HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties}, volume={394}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2014.02.020}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Sochacki, Tomasz and Bryan, Zachary and Amilusik, Mikolaj and Bobea, Milena and Fijalkowski, Michal and Bryan, Isaac and Lucznik, Boleslaw and Collazo, Ramon and Weyher, Jan L. and Kucharski, Robert and et al.}, year={2014}, month={May}, pages={55–60} }
 @article{bryan_bryan_bobea_hussey_kirste_collazo_sitar_2014, title={Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition}, volume={116}, ISSN={["1089-7550"]}, DOI={10.1063/1.4897233}, number={13}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bryan, Isaac and Bryan, Zachary and Bobea, Milena and Hussey, Lindsay and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2014}, month={Oct} }
 @article{kirste_mita_hoffmann_hussey_guo_bryan_bryan_tweedie_gerhold_hoffmann_et al._2014, title={Properties of AlN based lateral polarity structures}, volume={11}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201300287}, number={2}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2}, author={Kirste, Ronny and Mita, Seiji and Hoffmann, Marc P. and Hussey, Lindsay and Guo, Wei and Bryan, Isaac and Bryan, Zachary and Tweedie, James and Gerhold, Michael and Hoffmann, Axel and et al.}, year={2014}, pages={261–264} }
 @article{hussey_white_kirste_mita_bryan_guo_osterman_haidet_bryan_bobea_et al._2014, title={Sapphire decomposition and inversion domains in N-polar aluminum nitride}, volume={104}, ISSN={["1077-3118"]}, DOI={10.1063/1.4862982}, number={3}, journal={APPLIED PHYSICS LETTERS}, author={Hussey, Lindsay and White, Ryan M. and Kirste, Ronny and Mita, Seiji and Bryan, Isaac and Guo, Wei and Osterman, Katherine and Haidet, Brian and Bryan, Zachary and Bobea, Milena and et al.}, year={2014}, month={Jan} }
 @article{guo_bryan_xie_kirste_mita_bryan_hussey_bobea_haidet_gerhold_et al._2014, title={Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates}, volume={115}, ISSN={["1089-7550"]}, DOI={10.1063/1.4868678}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Guo, Wei and Bryan, Zachary and Xie, Jinqiao and Kirste, Ronny and Mita, Seiji and Bryan, Isaac and Hussey, Lindsay and Bobea, Milena and Haidet, Brian and Gerhold, Michael and et al.}, year={2014}, month={Mar} }
 @article{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201300401}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4}, author={Bryan, Isaac and Akouala, Christer-Rajiv and Tweedie, James and Bryan, Zachary and Rice, Anthony and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2014}, pages={454–457} }
 @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, ISSN={["1089-7550"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84907611759&partnerID=MN8TOARS}, DOI={10.1063/1.4896377}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Guo, Wei and Hussey, Lindsay and Collazo, Ramon and Sitar, Zlatko}, year={2014}, month={Sep} }
 @article{gaddy_bryan_bryan_xie_dalmau_moody_kumagai_nagashima_kubota_kinoshita_et al._2014, title={The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN}, volume={104}, ISSN={["1077-3118"]}, DOI={10.1063/1.4878657}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Gaddy, Benjamin E. and Bryan, Zachary and Bryan, Isaac and Xie, Jinqiao and Dalmau, Rafael and Moody, Baxter and Kumagai, Yoshinao and Nagashima, Toru and Kubota, Yuki and Kinoshita, Toru and et al.}, year={2014}, month={May} }
 @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2012.12.141}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, month={Mar}, pages={20–25} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4819200}, DOI={10.1063/1.4819200}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, Matthew S. and Bryan, Isaac and Sitar, Zlatko and Arellano, Consuelo and Xie, Jinqiao and Collazo, Ramon and Ivanisevic, Albena}, year={2013}, month={Aug}, pages={089902} }
 @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi Level Control of Point Defects During Growth of Mg-Doped GaN}, volume={42}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Bryan, Zachary and Hoffmann, Marc and Tweedie, James and Kirste, Ronny and Callsen, Gordon and Bryan, Isaac and Rice, Anthony and Bobea, Milena and Mita, Seiji and Xie, Jinqiao and et al.}, year={2013}, month={May}, pages={815–819} }
 @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4848555}, DOI={10.1063/1.4848555}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kirste, Ronny and Hoffmann, Marc P. and Sachet, Edward and Bobea, Milena and Bryan, Zachary and Bryan, Isaac and Nenstiel, Christian and Hoffmann, Axel and Maria, Jon-Paul and Collazo, Ramón and et al.}, year={2013}, month={Dec}, pages={242107} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Kinase detection with gallium nitride based high electron mobility transistors}, volume={103}, number={1}, journal={Applied Physics Letters}, author={Makowski, M. S. and Bryan, I. and Sitar, Z. and Arellano, C. and Xie, J. Q. and Collazo, R. and Ivanisevic, A.}, year={2013} }
 @article{bryan_rice_hussey_bryan_bobea_mita_xie_kirste_collazo_sitar_2013, title={Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition}, volume={102}, ISSN={["0003-6951"]}, DOI={10.1063/1.4792694}, number={6}, journal={APPLIED PHYSICS LETTERS}, author={Bryan, I. and Rice, A. and Hussey, L. and Bryan, Z. and Bobea, M. and Mita, S. and Xie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2013}, month={Feb} }
 @article{gaddy_bryan_bryan_kirste_xie_dalmau_moody_kumagai_nagashima_kubota_et al._2013, title={Vacancy compensation and related donor-acceptor pair recombination in bulk AlN}, volume={103}, ISSN={["1077-3118"]}, DOI={10.1063/1.4824731}, number={16}, journal={APPLIED PHYSICS LETTERS}, author={Gaddy, Benjamin E. and Bryan, Zachary and Bryan, Isaac and Kirste, Ronny and Xie, Jinqiao and Dalmau, Rafael and Moody, Baxter and Kumagai, Yoshinao and Nagashima, Toru and Kubota, Yuki and et al.}, year={2013}, month={Oct} }
 @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, ISSN={["0021-8979"]}, DOI={10.1063/1.4798352}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013}, month={Mar} }
 @article{hussey_mita_xie_guo_akouala_rajan_bryan_collazo_sitar_2012, title={Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition}, volume={112}, ISSN={["1089-7550"]}, DOI={10.1063/1.4768526}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Hussey, Lindsay and Mita, Seiji and Xie, Jinqiao and Guo, Wei and Akouala, Christer-Rajiv and Rajan, Joseph and Bryan, Isaac and Collazo, Ramon and Sitar, Zlatko}, year={2012}, month={Dec} }
 @article{guo_kirste_bryan_bryan_gerhold_collazo_sitar, title={Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes}, volume={117}, number={11}, journal={Journal of Applied Physics}, author={Guo, W. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Collazo, R. and Sitar, Z.} }
 @inproceedings{alden_bryan_gaddy_bryan_callsen_koukitu_kumagai_hoffmann_irving_sitar_et al., title={On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates}, volume={72}, number={5}, booktitle={Wide bandgap semiconductor materials and devices 17}, author={Alden, D. and Bryan, Z. and Gaddy, B. E. and Bryan, I. and Callsen, G. and Koukitu, A. and Kumagai, Y. and Hoffmann, A. and Irving, D. L. and Sitar, Z. and et al.}, pages={31–40} }
 @inproceedings{hoffmann_tweedie_kirste_bryan_bryan_gerhold_sitar_collazo, title={Point defect management in GaN by Fermi-level control during growth}, volume={8986}, booktitle={Gallium nitride materials and devices ix}, author={Hoffmann, M. P. and Tweedie, J. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Sitar, Z. and Collazo, R.} }