@article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2018.07.012}, abstractNote={Homoepitaxial non-polar AlN films were realized on m-plane (101-0)-oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films were assessed by means of atomic force microscopy and high resolution x-ray diffraction characterization. Results indicated that both m-plane AlN substrates and films possessed exceptional structural quality, with some anisotropic mosaic distributions due to the quasi-bulk nature of the non-polar single crystals. An increase in the MOCVD growth temperature was noted to minimize the degree of inherited mosaic anisotropy without altering the m-plane AlN film growth rate, indicating that high temperature growth is critical to produce optimal film crystallinity. A dramatic change in the film surface morphology from heavily faceted “slate-like” features to monolayer steps was observed as the growth temperature was increased. The “slate-like” surface morphology produced low intensity cross-streaks in symmetric (101-0) reciprocal space maps, tilted about 18° away from the (101-0) crystal truncation rod. The orientation of these diffuse streaks corresponds to the physical alignment of the slates with respect to the substrate surface normal. X-ray line scans and defect-selective reciprocal space mapping confirmed that these low intensity streaks are solely dependent on this peculiar surface structure produced at low MOCVD growth temperatures and unrelated to basal plane stacking faults or other extended defects. All observations confirm that high quality III-nitride epitaxial structures on m-plane AlN substrates are attainable with controllable MOCVD growth processes, as demanded for future high performing AlN-based non-polar devices.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, month={Feb}, pages={389–394} }
 @article{sarkar_mita_reddy_klump_kaess_tweedie_bryan_bryan_kirste_kohn_et al._2017, title={High free carrier concentration in p-GaN grown on AlN substrates}, volume={111}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4995239}, DOI={10.1063/1.4995239}, abstractNote={A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm−3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60–80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm−3) can be achieved in p-GaN/AlN without the onset of self-compensation.}, number={3}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Sarkar, Biplab and Mita, Seiji and Reddy, Pramod and Klump, Andrew and Kaess, Felix and Tweedie, James and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Kohn, Erhard and et al.}, year={2017}, month={Jul} }
 @article{haidet_sarkar_reddy_bryan_bryan_kirste_collazo_sitar_2017, title={Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN}, volume={56}, ISSN={["1347-4065"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-85030640149&partnerID=MN8TOARS}, DOI={10.7567/jjap.56.100302}, abstractNote={In this work, we report on voltage dependent contact characteristics of Al-rich n-AlGaN due to the presence of a Schottky barrier at the metal–AlGaN interface. Current–voltage characteristics appear to be linear at low voltages, but a clear nonlinearity is evident at high voltages. Unlike Ga-rich n-AlGaN where V-based contact marginally outperforms the Ti-based contact, V-based contact to Al-rich n-AlGaN outperforms the Ti-based contact by ∼2 orders of magnitude for all voltage ranges. The improved performance of V-based contacts is likely due to a lower Schottky barrier and partly due to ease of formation of a low barrier V–AlGaN interface.}, number={10}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, publisher={Japan Society of Applied Physics}, author={Haidet, Brian B. and Sarkar, Biplab and Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Oct} }
 @article{shelton_bryan_paisley_sachet_ihlefeld_lavrik_collazo_sitar_maria_2017, title={Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy}, volume={5}, ISSN={["2166-532X"]}, DOI={10.1063/1.4993840}, abstractNote={A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm−2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.}, number={9}, journal={APL MATERIALS}, author={Shelton, Christopher T. and Bryan, Isaac and Paisley, Elizabeth A. and Sachet, Edward and Ihlefeld, Jon F. and Lavrik, Nick and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2017}, month={Sep} }
 @article{alden_guo_kirste_kaess_bryan_troha_bagal_reddy_hernandez-balderrama_franke_et al._2016, title={Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications}, volume={108}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4955033}, DOI={10.1063/1.4955033}, abstractNote={Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with a root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.}, number={26}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Alden, D. and Guo, W. and Kirste, R. and Kaess, F. and Bryan, I. and Troha, T. and Bagal, A. and Reddy, P. and Hernandez-Balderrama, Luis H. and Franke, A. and et al.}, year={2016}, month={Jun} }
 @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/1.4967397}, DOI={10.1063/1.4967397}, abstractNote={A theoretical framework for a general approach to reduce point defect density in materials via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved via excess minority carrier generation. General guidelines for controlling dQFL that lead to a significant reduction in compensating point defects in any doped material is proposed. The framework introduces and incorporates the effects of various factors that control the efficacy of the defect reduction process such as defect level, defect formation energy, bandgap, and excess minority carrier density. Modified formation energy diagrams are proposed, which illustrate the effect of the quasi Fermi level control on the defect formation energies. These formation energy diagrams provide powerful tools to determine the feasibility and requirements to produce the desired reduction in specified point defects. An experimental study of the effect of excess minority carriers on point defect incorporation in GaN and AlGaN shows an excellent quantitative agreement with the theoretical predictions. Illumination at energies larger than the bandgap is employed as a means to generate excess minority carriers. The case studies with CN in Si doped GaN, H and VN in Mg doped GaN and VM-2ON in Si doped Al0.65Ga0.35N revealed a significant reduction in impurities in agreement with the proposed theory. Since compensating point defects control the material performance (this is particularly challenging in wide and ultra wide bandgap materials), dQFL control is a highly promising technique with wide scope and may be utilized to improve the properties of various materials systems and performance of devices based upon them.}, number={18}, journal={JOURNAL OF APPLIED PHYSICS}, publisher={AIP Publishing}, author={Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and et al.}, year={2016}, month={Nov} }
 @article{franke_hoffmann_hernandez-balderrama_kaess_bryan_washiyama_bobea_tweedie_kirste_gerhold_et al._2016, title={Strain engineered high reflectivity DBRs in the deep UV}, volume={9748}, ISSN={["1996-756X"]}, DOI={10.1117/12.2211700}, abstractNote={The maximum achievable reflectivity of current III-nitride Bragg reflectors in the UV-C spectral range is limited due to plastic relaxation of thick multilayer structures. Cracking due to a large mismatch of the thermal expansion and lattice constants between Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>y</sub>Ga<sub>1-y</sub>N alloys of different composition and the substrate at the heterointerface is the common failure mode. Strain engineering and strain relaxation concepts by the growth on a strain reduced Al<sub>0.85</sub>Ga<sub>0.15</sub>N template and the implementation of low temperature interlayers is demonstrated. A significant enhancement of the maximum reflectivity above 97% at a resonance wavelength of 270 nm due to an increase of the critical thickness of our AlN/Al<sub>0.65</sub>Ga<sub>0.35</sub>N DBRs to 1.45 &mu;m (25.5 pairs) prove their potential. By comparing the growth of identical Bragg reflectors on different pseudo-templates, the accumulated mismatch strain energy in the DBR, not the dislocation density provided by the template/substrate, was identified to limit the critical thickness. To further enhance the reflectivity low temperature interlays were implemented into the DBR to partially relief the misfit strain. Relaxation is enabled by the nucleation of small surface domains facilitating misfit dislocation injection and glide. Detailed structural and optical investigations will be conducted to prove the influence of the LT-AlN interlayers on the strain state, structural integrity and reflectivity properties. Coherent growth and no structural and optical degradation of the Bragg mirror properties was observed proving the fully applicability of the relaxation concept to fabricate thick high reflectivity DBR and vertical cavity laser structures.}, journal={GALLIUM NITRIDE MATERIALS AND DEVICES XI}, author={Franke, A. and Hoffmann, P. and Hernandez-Balderrama, L. and Kaess, F. and Bryan, I. and Washiyama, S. and Bobea, M. and Tweedie, J. and Kirste, R. and Gerhold, M. and et al.}, year={2016} }
 @article{bryan_bryan_mita_rice_tweedie_collazo_sitar_2016, title={Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides}, volume={438}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2015.12.022}, abstractNote={AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a surface kinetic framework for the control of surface morphology. A Burton, Cabrera, and Frank (BCF) theory-based model is formulated and utilized to understand the dependence of the surface kinetics on the vapor supersaturation, σ, and substrate misorientation angle, α. The surface energy of the Al-polar surface of AlN was experimentally determined using BCF theory to be 149±8 meV/Å2. The critical misorientation angle for the onset of step-bunching was determined to be ~0.25° for a growth rate of 500 nm/h and temperature of 1250 °C. Transitioning from a surface with 2D nuclei to one with bilayer steps required a decrease in σ or an increase in α, whereas the suppression of step-bunching required an increase in σ or a decrease in α.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bryan, Isaac and Bryan, Zachary and Mita, Seiji and Rice, Anthony and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2016}, month={Mar}, pages={81–89} }
 @article{bryan_bryan_mita_rice_hussey_shelton_tweedie_maria_collazo_sitar_2016, title={The role of surface kinetics on composition and quality of AlGaN}, volume={451}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2016.06.055}, abstractNote={Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50 pm for a 5×5 µm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600 nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bryan, Isaac and Bryan, Zachary and Mita, Seiji and Rice, Anthony and Hussey, Lindsay and Shelton, Christopher and Tweedie, James and Maria, Jon-Paul and Collazo, Ramon and Sitar, Zlatko}, year={2016}, month={Oct}, pages={65–71} }
 @article{troha_rigler_alden_bryan_guo_kirste_mita_gerhold_collazo_sitar_et al._2016, title={UV second harmonic generation in AlN waveguides with modal phase matching}, volume={6}, ISSN={["2159-3930"]}, DOI={10.1364/ome.6.002014}, abstractNote={AlN waveguides on sapphire substrates were fabricated from AlN films grown by metalorganic chemical vapor deposition. By tuning the wavelength of the pump light we demonstrated a second harmonic generation in the UV at 306, 331, and 356 nm using the d33 coefficient and modal dispersion phase matching (MDPM). A theoretical model for MDPM with two- and three-mode interaction in planar waveguides was used to explain the results. Its essential component describes the interaction of two, possibly different, waveguide modes at the fundamental frequency that excite the third mode at doubled frequency. The experimental results were found to agree well with the theoretical model. This work confirmed the application potential of high-quality AlN films as waveguides for nonlinear processes.}, number={6}, journal={OPTICAL MATERIALS EXPRESS}, author={Troha, T. and Rigler, M. and Alden, D. and Bryan, I. and Guo, W. and Kirste, R. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and et al.}, year={2016}, month={Jun}, pages={2014–2023} }
 @article{haidet_bryan_reddy_bryan_collazo_sitar_2015, title={A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN}, volume={117}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/1.4923062}, DOI={10.1063/1.4923062}, abstractNote={Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.}, number={24}, journal={JOURNAL OF APPLIED PHYSICS}, publisher={AIP Publishing}, author={Haidet, Brian B. and Bryan, Isaac and Reddy, Pramod and Bryan, Zachary and Collazo, Ramon and Sitar, Zlatko}, year={2015}, month={Jun} }
 @article{bain_hoffmann_bryan_collazo_ivanisevic_2015, title={Adsorption and adhesion of common serum proteins to nanotextured gallium nitride}, volume={7}, ISSN={["2040-3372"]}, DOI={10.1039/c4nr06353h}, abstractNote={Morphology can be used to modulate the adsorption of proteins onto gallium nitride.}, number={6}, journal={NANOSCALE}, author={Bain, Lauren E. and Hoffmann, Marc P. and Bryan, Isaac and Collazo, Ramon and Ivanisevic, Albena}, year={2015}, pages={2360–2365} }
 @article{reddy_bryan_bryan_tweedie_washiyama_kirste_mita_collazo_sitar_2015, title={Charge neutrality levels, barrier heights, and band offsets at polar AlGaN}, volume={107}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4930026}, DOI={10.1063/1.4930026}, abstractNote={In this work, the Fermi level and band alignment at c-plane surfaces and interfaces of AlGaN thin films grown on sapphire and native single crystalline AlN substrates were analyzed via x-ray photoelectron spectroscopy. The dependence of charge neutrality level (CNL) on Al composition is found to be linear with n-type Schottky barrier heights (Φbn) exhibiting an overall quadratic behavior due to bandgap bowing. A general theoretical expression for Schottky barrier height on AlGaN is determined as a function of Al composition and metal electronegativity utilizing the interface induced gap states (IFIGS) model and is corroborated with current-voltage (I-V) characterization on Ni-based Schottky diodes. The measured CNLs were used to determine the conduction and valence band offsets in AlGaN hetero-junctions according to the IFIGS and were found to be split approximately 2/3 and 1/3 of the bandgap, respectively, at interfaces with AlGaN having comparable Al and Ga concentrations. Nonlinearities in Φbn result i...}, number={9}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Tweedie, James and Washiyama, Shun and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2015}, month={Aug} }
 @article{kirste_rohrbaugh_bryan_bryan_collazo_ivanisevic_2015, title={Electronic Biosensors Based on III-Nitride Semiconductors}, volume={8}, ISSN={["1936-1327"]}, DOI={10.1146/annurev-anchem-071114-040247}, abstractNote={We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.}, journal={ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8}, author={Kirste, Ronny and Rohrbaugh, Nathaniel and Bryan, Isaac and Bryan, Zachary and Collazo, Ramon and Ivanisevic, Albena}, year={2015}, pages={149–169} }
 @article{hoffmann_kirste_mita_guo_tweedie_bobea_bryan_bryan_gerhold_collazo_et al._2015, title={Growth and characterization of AlxGa1-xN lateral polarity structures}, volume={212}, ISSN={["1862-6319"]}, DOI={10.1002/pssa.201431740}, abstractNote={Abstract AlGaN lateral polarity structures (LPS) with varying Al composition, have been fabricated by metalorganic chemical vapour deposition on LPS templates containing µm size domains. III‐metal and N‐polar AlGaN domains have been grown on LT‐AlN and c‐sapphire domains, respectively. LPS characterization by SEM and AFM reveals two major effects when the Al composition has been varied: (a) A high Al content leads to columnar growth within N‐polar domains and (b) a height difference between the polar domains can be observed for low Al compositions towards III‐polarity. The surface quality of the III‐polar domains is not effected by the Al composition. The surface roughness of N‐polar domains decreases for lower Al compositions. The high periodicity of the polar domains and the high quality of the boundary between domains suggest a high potential of AlGaN LPS to be used as lateral wave guides for quasi phase matching.}, number={5}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Hoffmann, Marc Patrick and Kirste, Ronny and Mita, Seiji and Guo, Wei and Tweedie, James and Bobea, Milena and Bryan, Isaac and Bryan, Zachary and Gerhold, Michael and Collazo, Ramon and et al.}, year={2015}, month={May}, pages={1039–1042} }
 @article{bryan_bryan_xie_mita_sitar_collazo_2015, title={High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates}, volume={106}, ISSN={["1077-3118"]}, DOI={10.1063/1.4917540}, abstractNote={The internal quantum efficiency (IQE) of Al0.55Ga0.45N/AlN and Al0.55Ga0.45N/Al0.85Ga0.15N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 1018 cm−3 was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Bryan, Zachary and Bryan, Isaac and Xie, Jinqiao and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon}, year={2015}, month={Apr} }
 @article{rohrbaugh_bryan_bryan_collazo_ivanisevic_2015, title={Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties}, volume={5}, ISSN={["2158-3226"]}, DOI={10.1063/1.4930192}, abstractNote={AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated on peptides and soaked in water for up to 168 hrs to examine FETs for both device responses and surface chemistry changes. Measurements demonstrated threshold voltage shifting after the functionalization and soaking processes, but demonstrated stable FET behavior throughout. X-ray photoelectron spectroscopy and atomic force microscopy confirmed peptides attachment to device surfaces before and after water soaking. Results of this work point to the stability of peptide coated functionalized AlGaN/GaN devices in solution and support further research of these devices as disposable, long term, in situ biosensors.}, number={9}, journal={AIP ADVANCES}, author={Rohrbaugh, Nathaniel and Bryan, Isaac and Bryan, Zachary and Collazo, Ramon and Ivanisevic, Albena}, year={2015}, month={Sep} }
 @article{bryan_bryan_mita_tweedie_sitar_collazo_2015, title={Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates}, volume={106}, ISSN={["1077-3118"]}, DOI={10.1063/1.4922385}, abstractNote={Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using k•p theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245 nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.}, number={23}, journal={APPLIED PHYSICS LETTERS}, author={Bryan, Zachary and Bryan, Isaac and Mita, Seiji and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2015}, month={Jun} }
 @article{rohrbaugh_bryan_bryan_arellano_collazo_ivanisevic_2014, title={AlGaN/GaN field effect transistors functionalized with recognition peptides}, volume={105}, number={13}, journal={Applied Physics Letters}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Arellano, C. and Collazo, R. and Ivanisevic, A.}, year={2014} }
 @article{rohrbaugh_bryan_bryan_collazo_ivanisevic_2014, title={Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors}, volume={61}, ISSN={["1938-6737"]}, DOI={10.1149/06104.0147ecst}, abstractNote={AlGaN/GaN HEMTs have been shown promise to be used as in-situ biosensors. An inquiry was done into the stability of physisorption as a method of adhering surface bioactive molecules to the surface of the HEMT gate contacts. Poly-l-lysine (30,000 MW) was used to coat AlGaN/GaN field effect transistors as a representative charged biomolecule for biosensing applications. Coated FETs were then exposed to 1 and 4 hour soaks in DI water at ambient temperature. Atomic force microscopy (AFM) and conductance measurements (IV) were used to quantify current decay and surface morphology changes. Analysis of the results showed that charged analytes readily adsorbed onto the surface. Upon adsorption an immediate signal decay was observed. The changes after soaking in solution were variable. The results point to the need to develop specific chemistry that will result in stable immobilization of biomolecules onto the device surface. Such stability is necessary for long- term reliable device operation.}, number={4}, journal={WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15}, author={Rohrbaugh, N. and Bryan, I. and Bryan, Z. and Collazo, R. and Ivanisevic, A.}, year={2014}, pages={147–151} }
 @article{bryan_bryan_bobea_hussey_kirste_sitar_collazo_2014, title={Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films}, volume={115}, ISSN={["1089-7550"]}, DOI={10.1063/1.4870284}, abstractNote={High-resolution photoluminescence studies on m-plane (1-100) homoepitaxial films grown by metalorganic chemical vapor deposition on AlN revealed several sharp donor-bound exciton (DBX) peaks with a full width at half maximum as narrow as 550 μeV. Power dependent photoluminescence distinguished DBXs tied to the Γ5 free exciton (FX) from those tied to the Γ1 FX. Both the n = 2 and n = 1 excited states of the Γ5 and Γ1 were resolved, giving binding energies of 52 meV and 55 meV, respectively. The DBX transition at 6.006 eV was identified as originating from the neutral-donor-oxygen (O0X). This assignment was based on secondary ion mass spectroscopy measurements, peak position with respect to the Si0X, and deep defect luminescence peaks located at 3.25 eV and 3.58 eV.}, number={13}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bryan, Zachary and Bryan, Isaac and Bobea, Milena and Hussey, Lindsay and Kirste, Ronny and Sitar, Zlatko and Collazo, Ramon}, year={2014}, month={Apr} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4903058}, DOI={10.1063/1.4903058}, abstractNote={A Fermi-level control scheme for point defect management using above-bandgap UV illumination during growth is presented. We propose an extension to the analogy between the Fermi level and the electrochemical potential such that the electrochemical potential of a charged defect in a material with steady-state populations of free charge carriers may be expressed in terms of the quasi-Fermi levels. A series of highly Si-doped Al0.65Ga0.35N films grown by metalorganic chemical vapor deposition with and without UV illumination showed that samples grown under UV illumination had increased free carrier concentration, free carrier mobility, and reduced midgap photoluminescence all indicating a reduction in compensating point defects.}, number={22}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Bryan, Zachary and Bryan, Isaac and Gaddy, Benjamin E. and Reddy, Pramod and Hussey, Lindsay and Bobea, Milena and Guo, Wei and Hoffmann, Marc and Kirste, Ronny and Tweedie, James and et al.}, year={2014}, month={Dec} }
 @article{sochacki_bryan_amilusik_bobea_fijalkowski_bryan_lucznik_collazo_weyher_kucharski_et al._2014, title={HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties}, volume={394}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2014.02.020}, abstractNote={Crystallization of GaN by the HVPE technique on an MOCVD-GaN/sapphire template with photo-lithographically patterned Ti mask and ammonothermally-grown GaN crystals (Am-GaN) was studied and compared. Structural and optical properties of the obtained free-standing HVPE-GaN revealed that Am-GaN seeds produced material of much higher quality in terms of etch pit density (EPD), X-ray rocking curves, and excitonic emission than the sapphire-based templates. The crystallization run on the Am-GaN seed, annealed before the growth in H2+NH3 atmosphere, resulted in the HVPE-GaN of an average EPD of 5×104 cm−2, (002) rocking curve width of 22″, and photo-luminescence as narrow as 130 µeV. However, small change in quality was observed when the Am-GaN seed was annealed in N2+NH3 atmosphere prior to growth. In turn, the Hall effect measurements showed that the HVPE-GaN grown on MOCVD-GaN/sapphire template possessed lower free carrier concentration and higher mobility than the HVPE-GaN grown on the Am-GaN seeds. These results were associated to the higher growth rate of the examined HVPE-GaN sample.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Sochacki, Tomasz and Bryan, Zachary and Amilusik, Mikolaj and Bobea, Milena and Fijalkowski, Michal and Bryan, Isaac and Lucznik, Boleslaw and Collazo, Ramon and Weyher, Jan L. and Kucharski, Robert and et al.}, year={2014}, month={May}, pages={55–60} }
 @article{bryan_bryan_bobea_hussey_kirste_collazo_sitar_2014, title={Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition}, volume={116}, ISSN={["1089-7550"]}, DOI={10.1063/1.4897233}, abstractNote={AlN homoepitaxial films were grown by metalorganic chemical vapor deposition on chemo-mechanically polished (11¯00)-oriented single crystalline AlN substrates. The dependence of the surface morphology, structural quality, and unintentional impurity concentrations on the growth temperature was studied in order to determine the most appropriate growth conditions for high quality (11¯00) AlN epitaxial layers. Optically smooth surfaces (RMS roughness of 0.4 nm) and high crystalline quality, as demonstrated by the presence of FWHM values for (101¯0) rocking curves along [0001] of less than 25 arc·sec, were achieved for films grown above 1350 °C. Furthermore, sharp and intense near band edge luminescence was observed in these high quality films. A reduction in unintentional oxygen impurity levels was seen with an increase in growth temperature. These high crystalline quality films are suitable for device applications and hold great potential for providing an ideal platform for deep UV emitters with high Al content AlGaN without polarization related effects.}, number={13}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bryan, Isaac and Bryan, Zachary and Bobea, Milena and Hussey, Lindsay and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2014}, month={Oct} }
 @article{kirste_mita_hoffmann_hussey_guo_bryan_bryan_tweedie_gerhold_hoffmann_et al._2014, title={Properties of AlN based lateral polarity structures}, volume={11}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201300287}, abstractNote={Growth and characterization of AlN based lateral polarity structures (LPS) are presented. The LPS were grown by MOCVD using patterned low temperature AlN/sapphire substrates: the Al-polar and N-polar AlN grew on AlN buffer layer and nitrided sapphire, respectively. AFM images showed a height difference between the two adjacent domains of different polarity on the order of 30 nm, which was equivalent to the low temperature AlN buffer layer thickness. SEM images provided an insight in the growth mode of the two polarities. It was shown that Al-polar AlN grew two-dimensionally, leading to a smooth well coalesced layer, while N-polar AlN grew primarily three-dimensionally, leading to a columnar structure. This difference in the growth mode led to different properties of domains with opposite polarity, including strain and defect incorporation, as observed by X-ray diffraction, photoluminescence, and Raman spectroscopy measurements. Finally, an outlook on the applicability and future development of AlN-based LPS is given. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)}, number={2}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2}, author={Kirste, Ronny and Mita, Seiji and Hoffmann, Marc P. and Hussey, Lindsay and Guo, Wei and Bryan, Isaac and Bryan, Zachary and Tweedie, James and Gerhold, Michael and Hoffmann, Axel and et al.}, year={2014}, pages={261–264} }
 @article{hussey_white_kirste_mita_bryan_guo_osterman_haidet_bryan_bobea_et al._2014, title={Sapphire decomposition and inversion domains in N-polar aluminum nitride}, volume={104}, ISSN={["1077-3118"]}, DOI={10.1063/1.4862982}, abstractNote={Transmission electron microscopy (TEM) techniques and potassium hydroxide (KOH) etching confirmed that inversion domains in the N-polar AlN grown on c-plane sapphire were due to the decomposition of sapphire in the presence of hydrogen. The inversion domains were found to correspond to voids at the AlN and sapphire interface, and transmission electron microscopy results showed a V-shaped, columnar inversion domain with staggered domain boundary sidewalls. Voids were also observed in the simultaneously grown Al-polar AlN, however no inversion domains were present. The polarity of AlN grown above the decomposed regions of the sapphire substrate was confirmed to be Al-polar by KOH etching and TEM.}, number={3}, journal={APPLIED PHYSICS LETTERS}, author={Hussey, Lindsay and White, Ryan M. and Kirste, Ronny and Mita, Seiji and Bryan, Isaac and Guo, Wei and Osterman, Katherine and Haidet, Brian and Bryan, Zachary and Bobea, Milena and et al.}, year={2014}, month={Jan} }
 @article{guo_bryan_xie_kirste_mita_bryan_hussey_bobea_haidet_gerhold_et al._2014, title={Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates}, volume={115}, ISSN={["1089-7550"]}, DOI={10.1063/1.4868678}, abstractNote={Optical gain spectra for ∼250 nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150 kW/cm2 were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8 nm without a cavity. The DH and MQW structures showed gain values of 50–60 cm−1 when pumped at 1 MW/cm2. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280 nm laser diodes.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Guo, Wei and Bryan, Zachary and Xie, Jinqiao and Kirste, Ronny and Mita, Seiji and Bryan, Isaac and Hussey, Lindsay and Bobea, Milena and Haidet, Brian and Gerhold, Michael and et al.}, year={2014}, month={Mar} }
 @article{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201300401}, abstractNote={A surface preparation technique has been developed for non-polar m-plane aluminum nitride (AlN) single crystalline substrates. Chemical surface treatments were conducted on chemomechanically polished m-plane oriented AlN substrate surfaces. X-ray photoelectron spectroscopy was used to characterize the surface chemistry after each processing step. A layer of mixed aluminum oxide-hydroxide was identified on ambient air-exposed surfaces. Analysis of the oxygen core level spectra showed oxygen in three bonding states, identified by the binding energies and relative separation of the fitted peaks as O2−, OH− and H2O. Molar ratios of different components showed the oxide to be dominantly bonded in the OH− state. Wet etching reduced the amount of surface oxides. Ammonia annealing at 1100 °C converted the aluminum oxide-hydroxide layer to AlN. Although the overall amount of the oxide on the surface was reduced by surface treatments, the nature of the oxide remained predominantly of the OH−character. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4}, author={Bryan, Isaac and Akouala, Christer-Rajiv and Tweedie, James and Bryan, Zachary and Rice, Anthony and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2014}, pages={454–457} }
 @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, ISSN={["1089-7550"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84907611759&partnerID=MN8TOARS}, DOI={10.1063/1.4896377}, abstractNote={Surface states and their influence on the Fermi level at the surface of GaN and AlN are studied using x-ray photoelectron spectroscopy (XPS). The effect of polarity on surface electronic properties was studied. Accurate modeling of the valence band edge and comparison with XPS data revealed the presence of donor surface states at 1.4 eV and acceptor states at energies >2.7 eV from the valence band in GaN. Al polar AlN showed acceptor states at energies >3.3 eV. Density of acceptor surface states was estimated to be between 1013 and 1014 eV−1 cm−2 in both GaN and AlN. The shift in charge neutrality levels and barrier heights due to polarity and the density of surface states on AlN and GaN were estimated from XPS measurements. Theoretical modeling and comparison with XPS data implied full compensation of spontaneous polarization charge by charged surface states. Barrier height measurements also reveal a dependence on polarity with ϕmetal-polar > ϕnon-polar > ϕnitrogen-polar suggesting that the N-polar surface is the most suitable for Ohmic contacts.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Guo, Wei and Hussey, Lindsay and Collazo, Ramon and Sitar, Zlatko}, year={2014}, month={Sep} }
 @article{gaddy_bryan_bryan_xie_dalmau_moody_kumagai_nagashima_kubota_kinoshita_et al._2014, title={The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN}, volume={104}, ISSN={["1077-3118"]}, DOI={10.1063/1.4878657}, abstractNote={Co-doping AlN crystals with Si is found to suppress the unwanted 4.7 eV (265 nm) deep ultraviolet absorption associated with isolated carbon acceptors common in materials grown by physical vapor transport. Density functional theory calculations with hybrid functionals demonstrate that silicon forms a stable nearest-neighbor defect complex with carbon. This complex is predicted to absorb at 5.5 eV and emit at or above 4.3 eV. Absorption and photoluminescence measurements of co-doped samples confirm the presence of the predicted CN-SiAl complex absorption and emission peaks and significant reduction of the 4.7 eV absorption. Other sources of deep ultraviolet absorption in AlN are also discussed.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Gaddy, Benjamin E. and Bryan, Zachary and Bryan, Isaac and Xie, Jinqiao and Dalmau, Rafael and Moody, Baxter and Kumagai, Yoshinao and Nagashima, Toru and Kubota, Yuki and Kinoshita, Toru and et al.}, year={2014}, month={May} }
 @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2012.12.141}, abstractNote={Abstract High-quality AlN and GaN bulk crystals were etched in a KOH aqueous solution or a KOH/H 2 O 2 mixture. As etched surfaces were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray photoelectron spectroscopy (XPS). It was found that the N-polar surfaces had approximately 900 and 20 times higher etch rate than the III-polar surface for AlN and GaN, respectively. AlN had a higher total etch rate than GaN at the same condition. Hexagonal hillocks were observed on N-polar face with {10−1−1} boundary planes for both AlN and GaN, while metal polar surfaces remained smooth. Formation of aluminum oxide/hydroxide AlO x (OH) y was confirmed by XPS on as etched N polar AlN surface; the addition of H 2 O 2 resulted in a higher total surface oxygen concentration. The smoothening effect by adding H 2 O 2 oxidizer was explained by the formation and dissolution of aluminum oxide/hydroxide.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, month={Mar}, pages={20–25} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4819200}, DOI={10.1063/1.4819200}, abstractNote={First Page}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, Matthew S. and Bryan, Isaac and Sitar, Zlatko and Arellano, Consuelo and Xie, Jinqiao and Collazo, Ramon and Ivanisevic, Albena}, year={2013}, month={Aug}, pages={089902} }
 @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi Level Control of Point Defects During Growth of Mg-Doped GaN}, volume={42}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Bryan, Zachary and Hoffmann, Marc and Tweedie, James and Kirste, Ronny and Callsen, Gordon and Bryan, Isaac and Rice, Anthony and Bobea, Milena and Mita, Seiji and Xie, Jinqiao and et al.}, year={2013}, month={May}, pages={815–819} }
 @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4848555}, DOI={10.1063/1.4848555}, abstractNote={Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm−3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm−1 and a surface plasma with an energy around 2000 cm−1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kirste, Ronny and Hoffmann, Marc P. and Sachet, Edward and Bobea, Milena and Bryan, Zachary and Bryan, Isaac and Nenstiel, Christian and Hoffmann, Axel and Maria, Jon-Paul and Collazo, Ramón and et al.}, year={2013}, month={Dec}, pages={242107} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Kinase detection with gallium nitride based high electron mobility transistors}, volume={103}, number={1}, journal={Applied Physics Letters}, author={Makowski, M. S. and Bryan, I. and Sitar, Z. and Arellano, C. and Xie, J. Q. and Collazo, R. and Ivanisevic, A.}, year={2013} }
 @article{bryan_rice_hussey_bryan_bobea_mita_xie_kirste_collazo_sitar_2013, title={Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition}, volume={102}, ISSN={["0003-6951"]}, DOI={10.1063/1.4792694}, abstractNote={Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the amount of strain and number of pits in localized areas. Pit densities as high as 1010 cm−2 were observed in areas where the tensile strain reached ∼0.4%, while unstrained areas of the film showed step flow growth. These nano-pits occurred as a strain relaxation mechanism and were not related to intrinsic defects, such as threading dislocations or inversion domains.}, number={6}, journal={APPLIED PHYSICS LETTERS}, author={Bryan, I. and Rice, A. and Hussey, L. and Bryan, Z. and Bobea, M. and Mita, S. and Xie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2013}, month={Feb} }
 @article{gaddy_bryan_bryan_kirste_xie_dalmau_moody_kumagai_nagashima_kubota_et al._2013, title={Vacancy compensation and related donor-acceptor pair recombination in bulk AlN}, volume={103}, ISSN={["1077-3118"]}, DOI={10.1063/1.4824731}, abstractNote={A prominent 2.8 eV emission peak is identified in bulk AlN substrates grown by physical vapor transport. This peak is shown to be related to the carbon concentration in the samples. Density functional theory calculations predict that this emission is caused by a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy. Photoluminescence and photoluminescence-excitation spectroscopy are used to confirm the model and indicate the DAP character of the emission. The interaction between defects provides a pathway to creating ultraviolet-transparent AlN substrates for optoelectronics applications.}, number={16}, journal={APPLIED PHYSICS LETTERS}, author={Gaddy, Benjamin E. and Bryan, Zachary and Bryan, Isaac and Kirste, Ronny and Xie, Jinqiao and Dalmau, Rafael and Moody, Baxter and Kumagai, Yoshinao and Nagashima, Toru and Kubota, Yuki and et al.}, year={2013}, month={Oct} }
 @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, ISSN={["0021-8979"]}, DOI={10.1063/1.4798352}, abstractNote={A high-resolution X-ray diffraction method with enhanced surface sensitivity has been used to investigate the effects of various polishing steps on the near-surface region of single crystal substrates. The method involves the study of a highly asymmetric reflection, observable under grazing incidence conditions. Analysis of rocking curve measurements and reciprocal space maps (RSMs) revealed subtle structural differences between the polished substrates. For aluminum nitride wafers, damage induced from diamond sawing and mechanical polishing was readily identifiable by on-axis rocking curves, but this method was unable to distinguish between sample surfaces subjected to various degrees of chemical mechanical polishing (CMP). To characterize sufficiently these surfaces, (10.3) RSMs were measured to provide both qualitative and quantitative information about the near-surface region. Two features present in the RSMs were utilized to quantitatively assess the polished wafers: the magnitude of the diffuse scatter in the omega-scans and the elongation of the crystal truncation rod. The method is able to distinguish between different degrees of CMP surface preparation and provides metrics to quantify subsurface damage after this polishing step.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013}, month={Mar} }
 @article{hussey_mita_xie_guo_akouala_rajan_bryan_collazo_sitar_2012, title={Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition}, volume={112}, ISSN={["1089-7550"]}, DOI={10.1063/1.4768526}, abstractNote={Nitrogen (N)-polar GaN lateral epitaxial overgrowth (LEO), with a reduced dislocation density, is grown by metalorganic chemical vapor deposition on patterned, smooth N-polar templates. For LEO growth conditions identical to that of smooth N-polar GaN on sapphire, mask orientation dependent morphologies and faceting of the overgrowth regions are observed. N-polar LEO oriented along the 〈1-100〉 direction exhibit flat sidewall morphologies while LEO oriented along the 〈11-20〉 direction exhibit inclined sidewalls. A lateral to vertical growth ratio for the 〈1-100〉 and 〈11-20〉 oriented LEO was found to be ∼0.3 and 0.2, respectively. Transmission electron microscope observations reveal a reduction of dislocations of up to three orders of magnitude in the overgrowth regions from ∼1010 cm−2 in the template. Additionally, dislocation bending likely initiated from interfacial tension between the N-polar GaN and SiO2 mask is observed, resulting in a reduction of dislocation density to ∼109 cm−2 in the window region of re-growth.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Hussey, Lindsay and Mita, Seiji and Xie, Jinqiao and Guo, Wei and Akouala, Christer-Rajiv and Rajan, Joseph and Bryan, Isaac and Collazo, Ramon and Sitar, Zlatko}, year={2012}, month={Dec} }
 @article{guo_kirste_bryan_bryan_gerhold_collazo_sitar, title={Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes}, volume={117}, number={11}, journal={Journal of Applied Physics}, author={Guo, W. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Collazo, R. and Sitar, Z.} }
 @inproceedings{alden_bryan_gaddy_bryan_callsen_koukitu_kumagai_hoffmann_irving_sitar_et al., title={On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates}, volume={72}, number={5}, booktitle={Wide bandgap semiconductor materials and devices 17}, author={Alden, D. and Bryan, Z. and Gaddy, B. E. and Bryan, I. and Callsen, G. and Koukitu, A. and Kumagai, Y. and Hoffmann, A. and Irving, D. L. and Sitar, Z. and et al.}, pages={31–40} }
 @inproceedings{hoffmann_tweedie_kirste_bryan_bryan_gerhold_sitar_collazo, title={Point defect management in GaN by Fermi-level control during growth}, volume={8986}, booktitle={Gallium nitride materials and devices ix}, author={Hoffmann, M. P. and Tweedie, J. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Sitar, Z. and Collazo, R.} }