@article{kim_mcclain_carbonell_2007, title={Deposition of poly[2-(perfluorooctyl)ethyl acrylate] on silicon wafers by the displacement of two immiscible supercritical phases (DISP)}, volume={43}, ISSN={["1872-8162"]}, DOI={10.1016/j.supflu.2007.05.003}, abstractNote={Abstract Deposition from two immiscible supercritical phases (DISP), in which a solution of supercritical carbon dioxide (scCO2) with a desired solute is displaced by supercritical helium (scHe), has been applied to deposit poly[2-(perfluorooctyl)ethyl acrylate] (PFOEA) on silicon wafer substrate coupons. The polymer was precipitated at the interfacial boundary between the supercritical He phase and the supercritical CO2/PFOEA solution phase and deposited on the substrates. Depending on the deposition conditions, two different deposition regimes – a particle formation regime and a film formation regime – were found. At low solution concentration or high displacement velocity, particles in the range of 1–3 μm in diameter formed while at high solution concentration or low displacement velocity, films in the range of 30–500 nm in thickness formed. The solute concentration, displacement velocity, and pressure all had a strong effect on the particle size and film thickness. Optical microscopy and atomic force microscopy (AFM) were used to characterize film morphology including drying defects and film roughness. Highly uniform films with no drying defects and low root-mean-square (RMS) roughness (∼2–3 nm) were obtained at high solution concentration. Films formed at low-to-moderate solution concentration displayed ring-like drying defects. The thickness and morphology of films deposited from DISP were compared with films prepared from high-pressure free meniscus coating (hFMC) with liquid CO2 (l-CO2) as a solvent and from normal dip coating with an organic solvent (1,1,2-trifluorotrichloroethane, Freon113). The film deposited from DISP was much thicker and more uniform than the film formed using Freon113.}, number={1}, journal={JOURNAL OF SUPERCRITICAL FLUIDS}, author={Kim, Jaehoon and McClain, James B. and Carbonell, Ruben G.}, year={2007}, month={Nov}, pages={139–149} } @misc{desimone_romack_betts_mcclain, title={Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants}, volume={5,783,082}, number={1998 Jul. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={DeSimone, J. M. and Romack, T. and Betts, D. E. and McClain, J. 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L.} } @misc{mcclain_romack_deyoung_lienhart_desimone_huggins, title={Methods for carbon dioxide dry cleaning with integrated distribution}, volume={6,248,136}, number={2001 Jun. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={McClain, J. B. and Romack, T. J. and DeYoung, J. P. and Lienhart, R. B. and DeSimone, J. M. and Huggins, K. L.} } @misc{deyoung_mcclain_gross_simone, title={Methods for cleaning microelectronic structures with aqueous carbon dioxide systems}, volume={6,641,678}, number={2003 Nov. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={DeYoung, J. P. and McClain, J. B. and Gross, S. M. and Simone, J. M.} } @misc{mcclain_desimone, title={Methods, apparatus and slurries for chemical mechanical planarization}, volume={6,623,355}, number={2003 Sep. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={McClain, J. B. and DeSimone, J. M.} } @misc{mcclain_desimone, title={Methods, apparatus and slurries for chemical mechanical planarization}, volume={6,743,078}, number={2004 Jun. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={McClain, J. B. and DeSimone, J. M.} } @misc{desimone_tumas_powell_mccleskey_romack_mcclain_birnbaum, title={Polymers for metal extractions in carbon dioxide}, volume={6,176,895}, number={2001 Jan. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={DeSimone, J. M. and Tumas, W. and Powell, K. R. and McCleskey, T. M. and Romack, T. J. and McClain, J. B. and Birnbaum, E. R.} }