@article{burnette_kiesel_sayers_nemanich_2008, title={Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex}, volume={516}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2007.08.045}, abstractNote={Abstract Titanium Interlayer Mediated Epitaxy (TIME) has been shown to promote the formation of epitaxial CoSi2 on Si (100). Similarities between Si and Si1−xGex alloys have motivated a study of whether the TIME process could be successful in forming epitaxial CoSi2 on Si1−xGex. Titanium layers of varying thickness were deposited as interlayers between a Co layer and c-Si/Si0.8Ge0.2 grown epitaxially onto Si (100) to investigate their role in the formation of epitaxial CoSi2 on Si1−xGex alloys. The effect of Ti interlayer thickness on the orientation of CoSi2 to the Si1−xGex substrate, and the conditions under which a polycrystalline CoSi2 film has been formed have been studied. It was found that Ti was beneficial in promoting epitaxy to the substrate in all cases. The experimental results indicate that with a Ti interlayer thickness of ∼ 50 A, the formation of epitaxial CoSi2 adjacent to the substrate was achieved, and pinhole formation was minimized. It was also observed that for increased interlayer thickness, Ti reacted with Si to form a titanium silicide.}, number={8}, journal={THIN SOLID FILMS}, author={Burnette, James E. and Kiesel, Sharon and Sayers, Dale E. and Nemanich, Robert J.}, year={2008}, month={Feb}, pages={1809–1817} }
 @article{neeyakorn_varma_jaye_burnette_lee_nemanich_grant_krim_2007, title={Dynamics of vapor-phase organophosphates on silicon and OTS}, volume={27}, ISSN={["1573-2711"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-34547211720&partnerID=MN8TOARS}, DOI={10.1007/s11249-007-9224-y}, number={3}, journal={TRIBOLOGY LETTERS}, author={Neeyakorn, Worakarn and Varma, Manju and Jaye, Cherno and Burnette, James E. and Lee, Sang M. and Nemanich, Robert J. and Grant, Christine S. and Krim, Jacqueline}, year={2007}, month={Sep}, pages={269–276} }
 @article{burnette_nemanich_sayers_2005, title={Formation of stable titanium germanosilicide thin films on Si1-xGex}, volume={97}, ISSN={["1089-7550"]}, DOI={10.1063/1.1923164}, abstractNote={The sequential deposition of strained Si1−xGex with concentrations x=0.20 and 0.30, amorphous silicon, and titanium on Si (100) after annealing at 700°C leads to the formation of a C54 Ti(Si1−yGey)2∕Si1−xGex bilayer, the phase formation and interface stability of which are studied. The use of an amorphous layer of Si is employed to eliminate or decrease the formation of germanium-rich Si1−zGez alloy precipitates found in the solid-phase reaction of Ti and Si1−xGex. It has been proposed that the precipitation phenomenon was driven by differences in the enthalpy of formation as a function of concentration in the Ti(Si1−yGey)2 layer, resulting from the enthalpy difference between TiSi2 and TiGe2 compounds, both of which are assumed to be completely miscible with one another. Layers of amorphous silicon of varying thicknesses were incorporated between a 300-Å Ti layer and the strained Si1−xGex substrate layer to achieve Ti(Si1−yGey)2 films that are in equilibrium with the Si1−xGex substrate. The use of amorphous silicon layers of varying thicknesses indicated that Ti(Si1−yGey)2∕Si1−xGex films could be formed with the absence of germanium-rich precipitates at the grain boundaries, depending on the amorphous silicon layer thickness.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Burnette, JE and Nemanich, RJ and Sayers, DE}, year={2005}, month={Jun} }
 @article{coppa_fulton_kiesel_davis_pandarinath_burnette_nemanich_smith_2005, title={Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces}, volume={97}, ISSN={["1089-7550"]}, DOI={10.1063/1.1898436}, abstractNote={Current–voltage measurements of Au contacts deposited on ex situ cleaned, n-type ZnO(0001) [(0001¯)] surfaces showed reverse bias leakage current densities of ∼0.01(∼0.1)A∕cm2 at 4.6 (3.75) V reverse bias and ideality factors >2 (both surfaces) before sharp, permanent breakdown (soft breakdown). This behavior was due primarily to the presence of (1.6–2.0)±0.1[(0.7–2.6)±0.1] monolayers (ML) of hydroxide, which forms an electron accumulation layer and increases the surface conductivity. In situ remote plasma cleaning of the (0001) [(0001¯)] surfaces using a 20vol%O2∕80vol%He mixture for the optimized temperatures, times, and pressure of 550±20°C(525±20°C), 60 (30) min, and 0.050 Torr reduced the thickness of the hydroxide layer to ∼0.4±0.1ML and completely eliminated all detectable hydrocarbon contamination. Subsequent cooling of both surfaces in the plasma ambient resulted in the chemisorption of oxygen and a change from 0.2 eV of downward band bending for samples cooled in vacuum to 0.3 eV of upward band bending indicative of the formation of a depletion layer of lower surface conductivity. Cooling in either ambient produced stoichiometric ZnO{0001} surfaces having an ordered crystallography as well as a step-and-terrace microstructure on the (0001¯) surface; the (0001) surface was without distinctive features. Sequentially deposited, unpatterned Au films, and presumably the rectifying gold contacts, initially grew on both surfaces cooled in the plasma ambient via the formation of islands that subsequently coalesced, as indicated by calculations from x-ray photoelectron spectroscopy data and confirmed by transmission electron microscopy. Calculations from the current–voltage data of the best contacts revealed barrier heights on the (0001) [(0001¯)] surfaces of 0.71±0.05(0.60±0.05)eV, a saturation current density of (4±0.5)×10−6A∕cm2(2.0±0.5×10−4A∕cm2), a lower value of n=1.17±0.05(1.03±0.05), a significantly lower leakage current density of ∼1.0×10−4A∕cm2(∼91×10−9A∕cm2) at 8.5 (7.0) V reverse bias prior to sharp, permanent breakdown (soft breakdown). All measured barrier heights were lower than the predicted Schottky–Mott value of 1.0 eV, indicating that the interface structure and the associated interface states affect the Schottky barrier. However, the constancy in the full width at half maximum of the core levels for Zn 2p(1.9±0.1eV) and O 1s(1.5±0.1eV), before and after sequential in situ Au depositions, indicated an abrupt, unreacted Au∕ZnO(0001) interface. Transmission electron microscopy confirmed the abruptness of an epitaxial interface. Annealing the contacts on the (0001) surface to 80±5 and 150±5°C resulted in decreases in the ideality factors to 1.12±0.05 and 1.09±0.05 and increases in saturation current density to 9.05 and 4.34μA∕cm2, the barrier height to 0.82±0.5 and 0.79±0.5eV, and in the leakage current densities to ∼2×10−3A∕cm2 at 6 V and ∼20×10−3A∕cm2 at 7 V, respectively.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Coppa, BJ and Fulton, CC and Kiesel, SM and Davis, RF and Pandarinath, C and Burnette, JE and Nemanich, RJ and Smith, DJ}, year={2005}, month={May} }
 @inbook{burnette_himmerlich_nemanich_2004, title={Silicide contacts for Si/Ge devices}, DOI={10.1049/pbep005e_ch7}, abstractNote={The development of ohmic or rectifying contacts to the semiconducting Si/Ge layers is a critical step in the development of the device technologies. Understanding the formation and electronic states of contacts to Si/Ge semiconducting layers begins with the clean surfaces. The formation and stability of the contacts will depend on the interface chemistry, and for Si/Ge, the system shows significant complexity in comparison to silicide contacts to silicon surfaces. Finally, the device operation will depend on the electrical properties of the interface. This chapter presents summaries of the current understanding of each of these areas, focusing on: (1) surface properties of Si1-xGex/Si(100) and Si1-xGex-Si(111) surfaces and stoichiometry of Si1-xGex surfaces, (2) interface thermodynamics, formation and stability of Ti(Si/Ge) on Si/Ge, CoSi2 on Si/Ge, NiSi on Si/Ge, and other metal silicide or germanosilicide thin films on Si/Ge, and lastly (3) Schottky barrier properties of silicide contacts on Si/Ge.}, booktitle={Silicide technology for integrated circuits}, publisher={London: Institution of Electrical Engineers}, author={Burnette, J. E. and Himmerlich, M. and Nemanich, R. J.}, year={2004} }
 @article{platow_wood_tracy_burnette_nemanich_sayers_2001, title={Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001)}, volume={63}, ISSN={["1550-235X"]}, DOI={10.1103/physrevb.63.115312}, abstractNote={This paper presents a detailed study of thin Co films grown directly, sequentially, and by codeposition with Si on the $(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})\ensuremath{-}R30\ifmmode^\circ\else\textdegree\fi{}$ surface of $6H\ensuremath{-}\mathrm{SiC}(0001).$ The structure, chemistry, and morphology of the films were determined using x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and atomic force microscopy. For directly deposited Co films (1--8 nm) graphite layers form on top of the film surface during annealing, whereas Co stays mainly unreacted over a temperature range of 300--1000 \ifmmode^\circ\else\textdegree\fi{}C. The formation of ${\mathrm{CoSi}}_{2}$ is achieved by sequential and codeposition of Co and Si. Films annealed at 550 \ifmmode^\circ\else\textdegree\fi{}C are polycrystalline and further annealing to 650 \ifmmode^\circ\else\textdegree\fi{}C causes no C segregation, but there is islanding of the films. Attempts to improve film morphology and homogeneity including applying a template method and varying growth temperature are also reported.}, number={11}, journal={PHYSICAL REVIEW B}, author={Platow, W and Wood, DK and Tracy, KM and Burnette, JE and Nemanich, RJ and Sayers, DE}, year={2001}, month={Mar} }
 @article{platow_wood_burnette_nemanich_sayers_2001, title={XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001)}, volume={8}, ISSN={["0909-0495"]}, DOI={10.1107/S0909049500017921}, abstractNote={Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (31/2 × 31/2)-R30° reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.}, journal={JOURNAL OF SYNCHROTRON RADIATION}, author={Platow, W and Wood, DE and Burnette, JE and Nemanich, RJ and Sayers, DE}, year={2001}, month={Mar}, pages={475–477} }