Jan F. Schetzina

Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

ELECTRONICS LETTERS, 38(14), 755–756.

UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes

Opto-Electronics Review, 10(4), 251–260.

Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

Washington, DC: U.S. Patent and Trademark Office.

Solar-blind AlGaN heterostructure photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7.

UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12.

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy

Young, A. P., Schafer, J., Brillson, L. J., Yang, Y., Xu, S. H., Cruguel, H., … Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 308–313.

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 1884–1890.

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

APPLIED PHYSICS LETTERS, 75(4), 463–465.

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.

Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

MBE growth and properties of GaN on GaN/SiC substrates

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

ELECTRONICS LETTERS, 33(18), 1556–1557.

Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters

Hughes, W. C., Boney, C., Johnson, M. A. L., Cook, J. W., & Schetzina, J. F. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 546–551.

UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates

Khan, M. A., Chen, Q., Yang, J., Sun, C. J., Lim, B., Temkin, H., … Shur, M. S. (1997, January). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 43, pp. 265–268.

Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

Method of fabricating epitaxially deposited ohmic contacts using group II-V I

Washington, DC: U.S. Patent and Trademark Office.