Works (24)

Updated: July 5th, 2023 16:04

2002 journal article

Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

ELECTRONICS LETTERS, 38(14), 755–756.

By: D. Selvanathan*, L. Zhou*, V. Kumar*, I. Adesida*, J. Long n, M. Johnson n, J. Schetzina n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes

Opto-Electronics Review, 10(4), 251–260.

By: J. Long, S. Varadaraajan, J. Matthews & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Solar-blind AlGaN heterostructure photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7.

By: J. Brown n, J. Li n, P. Srinivasan n, J. Matthews n & J. Schetzina n

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12.

By: J. Brown n, J. Boney n, J. Matthews n, P. Srinivasan n, J. Schetzina n, T. Nohava*, W. Yang*, S. Krishnankutty*

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson n, Z. Yu n, J. Brown n, F. Koeck n, N. El-Masry n, H. Kong*, J. Edmond*, J. Cook n, J. Schetzina n

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

By: J. Muth, J. Brown, M. Johnson, Z. Yu, R. Kolbas, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy

Young, A. P., Schafer, J., Brillson, L. J., Yang, Y., Xu, S. H., Cruguel, H., … Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 308–313.

By: A. Young*, J. Schafer*, L. Brillson*, Y. Yang*, S. Xu*, H. Cruguel*, G. Lapeyre*, M. Johnson n, J. Schetzina n

author keywords: defects states; n-GaN; Schottky barrier
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 1884–1890.

By: Y. Yang*, S. Mishra*, F. Cerrina*, S. Xu*, H. Cruguel*, G. Lapeyre*, J. Schetzina n

Source: Web Of Science
Added: August 6, 2018

1999 article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

By: M. Johnson n, Z. Yu n, J. Brown n, N. El-Masry, J. Cook n & J. Schetzina n

author keywords: cathodoluminescence (CL); epitaxial lateral overgrowth (ELO); GaN; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

APPLIED PHYSICS LETTERS, 75(4), 463–465.

By: S. Guha*, N. Bojarczuk*, M. Johnson n & J. Schetzina n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

By: J. Brown n, Z. Yu n, J. Matthews n, S. Harney n, J. Boney n, J. Schetzina n, J. Benson*, K. Dang* ...

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.

By: M. Johnson, J. Brown, N. El-Masry, J. Cook, J. Schetzina, H. Kong, J. Edmond

Source: Web Of Science
Added: August 6, 2018

1998 article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Cook n & J. Schetzina n

author keywords: gallium nitride; MOVPE; epitaxial lateral overgrowth
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.

By: M. Johnson n, W. Hughes n, W. Rowland n, J. Cook n, J. Schetzina n, M. Leonard*, H. Kong*, J. Edmond*, J. Zavada*

Contributors: M. Johnson n, W. Hughes n, W. Rowland Jr., J. Cook Jr., J. Schetzina n, M. Leonard*, H. Kong*, J. Edmond*, J. Zavada*

Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 patent

Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 article

MBE growth and properties of GaN on GaN/SiC substrates

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.

By: M. Johnson n, S. Fujita n, W. Rowland n, K. Bowers n, W. Hughes n, Y. He n, N. ElMasry n, J. Cook n ...

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

ELECTRONICS LETTERS, 33(18), 1556–1557.

By: G. Bulman*, K. Doverspike*, S. Sheppard*, T. Weeks*, H. Kong*, H. Dieringer*, J. Edmond*, J. Brown n, J. Swindell n, J. Schetzina n

author keywords: semiconductor junction lasers; silicon carbide; semiconductor quantum wells
Source: Web Of Science
Added: August 6, 2018

1997 article

Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters

Hughes, W. C., Boney, C., Johnson, M. A. L., Cook, J. W., & Schetzina, J. F. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 546–551.

By: W. Hughes*, C. Boney, M. Johnson, J. Cook* & J. Schetzina*

Source: Web Of Science
Added: August 6, 2018

1997 article

UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates

Khan, M. A., Chen, Q., Yang, J., Sun, C. J., Lim, B., Temkin, H., … Shur, M. S. (1997, January). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 43, pp. 265–268.

By: M. Khan*, Q. Chen*, J. Yang*, C. Sun*, B. Lim*, H. Temkin*, J. Schetzina*, M. Shur*

author keywords: light emitting diode; GaN-InGaN laser; multiple quantum wells; metal-organic chemical vapor deposition
Source: Web Of Science
Added: August 6, 2018

1994 patent

Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Method of fabricating epitaxially deposited ohmic contacts using group II-V I

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

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