Works (25)

2002 journal article

Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

Electronics Letters, 38(14), 755–756.

By: D. Selvanathan, L. Zhou, V. Kumar, I. Adesida, J. Long, M. Johnson, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes

Opto-Electronics Review, 10(4), 251–260.

By: J. Long, S. Varadaraajan, J. Matthews & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

High-sensitivity visible-blind AlGaN photodiodes and photodiode arrays

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U34–39.

By: J. Brown, J. Matthews, S. Harney, J. Boney, J. Schetzina, J. Benson, K. Dang, T. Nohava, W. Yang, S. Krishnankutty

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Solar-blind AlGaN heterostructure photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7.

By: J. Brown, J. Li, P. Srinivasan, J. Matthews & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12.

By: J. Brown, J. Boney, J. Matthews, P. Srinivasan, J. Schetzina, T. Nohava, W. Yang, S. Krishnankutty

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson, Z. Yu, J. Brown, F. Koeck, N. El-Masry, H. Kong, J. Edmond, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

By: J. Muth, J. Brown, M. Johnson, Z. Yu, R. Kolbas, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy

Journal of Electronic Materials, 28(3), 308–313.

By: A. Young, J. Schafer, L. Brillson, Y. Yang, S. Xu, H. Cruguel, G. Lapeyre, M. Johnson, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu, M. Johnson, J. Brown, N. El-Masry, J. Muth, J. Cook, J. Schetzina, K. Haberern, H. Kong, J. Edmond

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1884–1890.

By: Y. Yang, S. Mishra, F. Cerrina, S. Xu, H. Cruguel, G. Lapeyre, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Journal of Electronic Materials, 28(3), 295–300.

By: M. Johnson, Z. Yu, J. Brown, N. El-Masry, J. Cook & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

Applied Physics Letters, 75(4), 463–465.

By: S. Guha, N. Bojarczuk, M. Johnson & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

By: J. Brown, Z. Yu, J. Matthews, S. Harney, J. Boney, J. Schetzina, J. Benson, K. Dang ...

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282–1285.

By: M. Johnson, J. Brown, N. El-Masry, J. Cook, J. Schetzina, H. Kong, J. Edmond

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Journal of Crystal Growth, 195(1-4), 333–339.

By: Z. Yu, M. Johnson, J. Brown, N. El-Masry, J. Cook & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Journal of Crystal Growth, 175, 72–78.

By: M. Johnson, W. Hughes, W. Rowland, J. Cook, J. Schetzina, M. Leonard, H. Kong, J. Edmond, J. Zavada

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

MBE Growth and properties of GaN on GaN/SiC substrates

Solid-State Electronics, 41(2), 213–218.

By: M. Johnson, S. Fujita, W. Rowland, K. Bowers, W. Hughes, Y. He, N. El-Masry, J. Cook ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Electronics Letters, 33(18), 1556–1557.

By: G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, H. Kong, H. Dieringer, J. Edmond, J. Brown, J. Swindell, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters

Journal of Crystal Growth, 175(1997 May), 546–551.

By: W. Hughes, C. Boney, M. Johnson, J. Cook & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

UV, blue and green light emitting diodes based on gan-ingan multiple quantum wells over sapphire and (111) spinel substrates

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 43(1-3), 265–268.

By: M. Khan, Q. Chen, C. Sun, B. Lim, H. Temkin, J. Schetzina, M. Shur

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Method of fabricating epitaxially deposited ohmic contacts using group II-V I

Washington, DC: U.S. Patent and Trademark Office.

By: J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018