@article{selvanathan_zhou_kumar_adesida_long_johnson_schetzina_2002, title={Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors}, volume={38}, ISSN={["0013-5194"]}, DOI={10.1049/el:20020500}, number={14}, journal={ELECTRONICS LETTERS}, author={Selvanathan, D and Zhou, L and Kumar, V and Adesida, I and Long, JP and Johnson, MAL and Schetzina, JF}, year={2002}, month={Jul}, pages={755–756} }
 @article{long_varadaraajan_matthews_schetzina_2002, title={UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes}, volume={10}, number={4}, journal={Opto-electronics Review}, author={Long, J. P. and Varadaraajan, S. and Matthews, J. and Schetzina, J. F.}, year={2002}, pages={251–260} }
 @misc{schetzina_2000, title={Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well}, volume={6,046,464}, number={2000 Apr. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={2000} }
 @article{brown_li_srinivasan_matthews_schetzina_2000, title={Solar-blind AlGaN heterostructure photodiodes}, volume={5}, DOI={10.1557/s1092578300000090}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Li, J. Z. and Srinivasan, P. and Matthews, J. and Schetzina, J. F.}, year={2000}, pages={1–7} }
 @article{brown_boney_matthews_srinivasan_schetzina_nohava_yang_krishnankutty_2000, title={UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes}, volume={5}, DOI={10.1557/s1092578300000065}, number={6}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Boney, J. and Matthews, J. and Srinivasan, P. and Schetzina, J. F. and Nohava, T. and Yang, W. and Krishnankutty, S.}, year={2000}, pages={1–12} }
 @article{johnson_yu_brown_koeck_el-masry_kong_edmond_cook_schetzina_1999, title={A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications}, volume={4S1}, DOI={10.1557/s1092578300003100}, number={G5.10}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Johnson, M. A. L. and Yu, Z. H. and Brown, J. D. and Koeck, F. A. and El-Masry, N. A. and Kong, H. S. and Edmond, J. A. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{muth_brown_johnson_yu_kolbas_cook_schetzina_1999, title={Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys}, volume={4S1}, number={G5.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Muth, J. F. and Brown, J. D. and Johnson, M. A. L. and Yu, Z. H. and Kolbas, R. M. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{young_schafer_brillson_yang_xu_cruguel_lapeyre_johnson_schetzina_1999, title={Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy}, volume={28}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-999-0032-z}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Young, AP and Schafer, J and Brillson, LJ and Yang, Y and Xu, SH and Cruguel, H and Lapeyre, GJ and Johnson, MAL and Schetzina, JF}, year={1999}, month={Mar}, pages={308–313} }
 @article{yu_johnson_brown_el-masry_muth_cook_schetzina_haberern_kong_edmond_1999, title={Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates}, volume={4S1}, DOI={10.1557/s1092578300002878}, number={G4.3}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Yu, Z. H. and Johnson, M. A. L. and Brown, J. D. and El-Masry, N. A. and Muth, J. F. and Cook, J. W. and Schetzina, J. F. and Haberern, K. W. and Kong, H. S. and Edmond, J. S.}, year={1999} }
 @article{yang_mishra_cerrina_xu_cruguel_lapeyre_schetzina_1999, title={Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces}, volume={17}, ISSN={["1071-1023"]}, DOI={10.1116/1.590840}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Yang, Y and Mishra, S and Cerrina, F and Xu, SH and Cruguel, H and Lapeyre, GJ and Schetzina, JF}, year={1999}, pages={1884–1890} }
 @article{johnson_yu_brown_el-masry_cook_schetzina_1999, title={Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride}, volume={28}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-999-0030-1}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Johnson, MAL and Yu, ZH and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1999}, month={Mar}, pages={295–300} }
 @article{guha_bojarczuk_johnson_schetzina_1999, title={Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2}, volume={75}, ISSN={["0003-6951"]}, DOI={10.1063/1.124409}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Guha, S and Bojarczuk, NA and Johnson, MAL and Schetzina, JF}, year={1999}, month={Jul}, pages={463–465} }
 @article{brown_yu_matthews_harney_boney_schetzina_benson_dang_terrill_nohava_et al._1999, title={Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes}, volume={4}, DOI={10.1557/s109257830000065x}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Yu, Z. H. and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J. F. and Benson, J. D. and Dang, K. W. and Terrill, C. and Nohava, T. and et al.}, year={1999}, pages={1–10} }
 @misc{schetzina_1998, title={Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same}, volume={5,818,072}, number={1998 Oct. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1998} }
 @article{johnson_brown_el-masry_cook_schetzina_kong_edmond_1998, title={Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures}, volume={16}, ISSN={["1071-1023"]}, DOI={10.1116/1.590000}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF and Kong, HS and Edmond, JA}, year={1998}, pages={1282–1285} }
 @article{yu_johnson_brown_el-masry_cook_schetzina_1998, title={Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire}, volume={195}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(98)00638-1}, number={1-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Yu, ZH and Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1998}, month={Dec}, pages={333–339} }
 @article{johnson_hughes_rowland_cook_schetzina_leonard_kong_edmond_zavada_1997, title={Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy}, volume={175}, ISSN={["1873-5002"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0001866991&partnerID=MN8TOARS}, DOI={10.1016/S0022-0248(96)01019-6}, note={Place: Malibu, CA, USA Publisher: Elsevier Sci B.V.}, number={PART 1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Johnson, MAL and Hughes, WC and Rowland, WH and Cook, JW and Schetzina, JF and Leonard, M and Kong, HS and Edmond, JA and Zavada, J}, year={1997}, month={May}, pages={72–78} }
 @misc{schetzina_1997, title={Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same}, volume={5,679,965}, number={1997 Oct. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1997} }
 @article{johnson_fujita_rowland_bowers_hughes_he_elmasry_cook_schetzina_ren_et al._1997, title={MBE growth and properties of GaN on GaN/SiC substrates}, volume={41}, ISSN={["0038-1101"]}, DOI={10.1016/S0038-1101(96)00169-4}, number={2}, journal={SOLID-STATE ELECTRONICS}, author={Johnson, MAL and Fujita, S and Rowland, WH and Bowers, KA and Hughes, WC and He, YW and ElMasry, NA and Cook, JW and Schetzina, JF and Ren, J and et al.}, year={1997}, month={Feb}, pages={213–218} }
 @article{bulman_doverspike_sheppard_weeks_kong_dieringer_edmond_brown_swindell_schetzina_1997, title={Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC}, volume={33}, ISSN={["0013-5194"]}, DOI={10.1049/el:19971025}, number={18}, journal={ELECTRONICS LETTERS}, author={Bulman, GE and Doverspike, K and Sheppard, ST and Weeks, TW and Kong, HS and Dieringer, HM and Edmond, JA and Brown, JD and Swindell, JT and Schetzina, JF}, year={1997}, month={Aug}, pages={1556–1557} }
 @article{hughes_boney_johnson_cook_schetzina_1997, title={Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters}, volume={175}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(96)01022-6}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Hughes, WC and Boney, C and Johnson, MAL and Cook, JW and Schetzina, JF}, year={1997}, month={May}, pages={546–551} }
 @article{khan_chen_yang_sun_lim_temkin_schetzina_shur_1997, title={UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates}, volume={43}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(96)01903-4}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Khan, MA and Chen, Q and Yang, J and Sun, CJ and Lim, B and Temkin, H and Schetzina, J and Shur, MS}, year={1997}, month={Jan}, pages={265–268} }
 @misc{schetzina_1994, title={Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same}, volume={5351255}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1994} }
 @misc{schetzina_1994, title={Method of fabricating epitaxially deposited ohmic contacts using group II-V I}, volume={5366927}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1994} }