@article{selvanathan_zhou_kumar_adesida_long_johnson_schetzina_2002, title={Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors}, volume={38}, ISSN={["0013-5194"]}, DOI={10.1049/el:20020500}, abstractNote={Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6×10−5 Ω-cm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of −300 V in a reactive ion etching system.}, number={14}, journal={ELECTRONICS LETTERS}, author={Selvanathan, D and Zhou, L and Kumar, V and Adesida, I and Long, JP and Johnson, MAL and Schetzina, JF}, year={2002}, month={Jul}, pages={755–756} }
 @article{long_varadaraajan_matthews_schetzina_2002, title={UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes}, volume={10}, number={4}, journal={Opto-electronics Review}, author={Long, J. P. and Varadaraajan, S. and Matthews, J. and Schetzina, J. F.}, year={2002}, pages={251–260} }
 @misc{schetzina_2000, title={Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well}, volume={6,046,464}, number={2000 Apr. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={2000} }
 @article{brown_li_srinivasan_matthews_schetzina_2000, title={Solar-blind AlGaN heterostructure photodiodes}, volume={5}, DOI={10.1557/s1092578300000090}, abstractNote={A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al 0.64 Ga 0.36 N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2 μm undoped Al 0.47 Ga 0.53 N active layer and a 0.5 μm p-type Al 0.47 Ga 0.53 N:Mg top layer. Square mesas of area A = 4 × 10 −4 cm 2 were obtained by reactive ion etching using BCl 3 . The solar-blind photodiode exhibits a very narrow UV spectral responsivity band peaked at 273 nm with a FWHM = 21 nm. Maximum responsivity R = 0.051 A/W at 273 nm, corresponding to an internal quantum efficiency of 27%. R 0 A values up to 8 × 10 7 Ω-cm 2 were obtained, corresponding to D* = 3.5 × 10 12 cm Hz 1/2 W −1 at 273 nm.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Li, J. Z. and Srinivasan, P. and Matthews, J. and Schetzina, J. F.}, year={2000}, pages={1–7} }
 @article{brown_boney_matthews_srinivasan_schetzina_nohava_yang_krishnankutty_2000, title={UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes}, volume={5}, DOI={10.1557/s1092578300000065}, abstractNote={An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.}, number={6}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Boney, J. and Matthews, J. and Srinivasan, P. and Schetzina, J. F. and Nohava, T. and Yang, W. and Krishnankutty, S.}, year={2000}, pages={1–12} }
 @article{johnson_yu_brown_koeck_el-masry_kong_edmond_cook_schetzina_1999, title={A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications}, volume={4S1}, DOI={10.1557/s1092578300003100}, abstractNote={A systematic study of the growth and doping of GaN, AlGaN, and InGaN by both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) has been performed. Critical differences between the resulting epitaxy are observed in the p-type doping using magnesium as the acceptor species. MBE growth, using rf-plasma sources to generate the active nitrogen species for growth, has been used for III-Nitride compounds doped either n-type with silicon or p-type with magnesium. Blue and violet light emitting diode (LED) test structures were fabricated. These vertical devices required a relatively high forward current and exhibited high leakage currents. This behavior was attributed to parallel shorting mechanisms along the dislocations in MBE grown layers. For comparison, similar devices were fabricated using a single wafer vertical flow MOVPE reactor and ammonia as the active nitrogen species. MOVPE grown blue LEDs exhibited excellent forward device characteristics and a high reverse breakdown voltage. We feel that the excess hydrogen, which is present on the GaN surface due to the dissociation of ammonia in MOVPE, acts to passivate the dislocations and eliminate parallel shorting for vertical device structures. These findings support the widespread acceptance of MOVPE, rather than MBE, as the epitaxial growth technique of choice for III-V nitride materials used in vertical transport bipolar devices for optoelectronic applications.}, number={G5.10}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Johnson, M. A. L. and Yu, Z. H. and Brown, J. D. and Koeck, F. A. and El-Masry, N. A. and Kong, H. S. and Edmond, J. A. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{muth_brown_johnson_yu_kolbas_cook_schetzina_1999, title={Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys}, volume={4S1}, number={G5.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Muth, J. F. and Brown, J. D. and Johnson, M. A. L. and Yu, Z. H. and Kolbas, R. M. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{young_schafer_brillson_yang_xu_cruguel_lapeyre_johnson_schetzina_1999, title={Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy}, volume={28}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-999-0032-z}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Young, AP and Schafer, J and Brillson, LJ and Yang, Y and Xu, SH and Cruguel, H and Lapeyre, GJ and Johnson, MAL and Schetzina, JF}, year={1999}, month={Mar}, pages={308–313} }
 @article{yu_johnson_brown_el-masry_muth_cook_schetzina_haberern_kong_edmond_1999, title={Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates}, volume={4S1}, DOI={10.1557/s1092578300002878}, abstractNote={The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO 2 versus SiN x insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.}, number={G4.3}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Yu, Z. H. and Johnson, M. A. L. and Brown, J. D. and El-Masry, N. A. and Muth, J. F. and Cook, J. W. and Schetzina, J. F. and Haberern, K. W. and Kong, H. S. and Edmond, J. S.}, year={1999} }
 @article{yang_mishra_cerrina_xu_cruguel_lapeyre_schetzina_1999, title={Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces}, volume={17}, ISSN={["1071-1023"]}, DOI={10.1116/1.590840}, abstractNote={Photoemission spectromicroscopy is employed to investigate the inhomogeneities of surface electronic structures of epitaxial lateral overgrowth GaN material. The image, acquired on a clean surface, shows the surface morphology and agrees with the atomic force microscopy image. The dominant contrast mechanism is attributed to the angular dependence of the quantum yield for regions at different angles. Energy distribution curves localized to a submicron region for the Ga 3d core level demonstrate that growth-front areas have different Fermi level pinning behavior compared with window areas and overgrowth regions. The sample exposed to atomic hydrogen shows the same Fermi level position for all areas of the surface. Photoemission spectromicroscopy reveals island formation when about 10 monolayers of Mg is deposited on the surface.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Yang, Y and Mishra, S and Cerrina, F and Xu, SH and Cruguel, H and Lapeyre, GJ and Schetzina, JF}, year={1999}, pages={1884–1890} }
 @article{johnson_yu_brown_el-masry_cook_schetzina_1999, title={Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride}, volume={28}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-999-0030-1}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Johnson, MAL and Yu, ZH and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1999}, month={Mar}, pages={295–300} }
 @article{guha_bojarczuk_johnson_schetzina_1999, title={Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2}, volume={75}, ISSN={["0003-6951"]}, DOI={10.1063/1.124409}, abstractNote={We demonstrate the selective area growth of gallium nitride on patterned Si(111)/GaN/SiO2 wafers by metalorganic molecular beam epitaxy using triethyl gallium as a Ga source. We show that such selective area deposition may be used to grow isolated microcolumns of GaN with lateral dimensions of tens of nanometers on Si/SiO2 wafers. Via high resolution cathodoluminescence imaging we show that such microcolumn structures are highly luminescent inspite of a large surface to volume ratio, indicating that nonradiative recombination at free surfaces is not a significant issue in this system.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Guha, S and Bojarczuk, NA and Johnson, MAL and Schetzina, JF}, year={1999}, month={Jul}, pages={463–465} }
 @article{brown_yu_matthews_harney_boney_schetzina_benson_dang_terrill_nohava_et al._1999, title={Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes}, volume={4}, DOI={10.1557/s109257830000065x}, abstractNote={A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Yu, Z. H. and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J. F. and Benson, J. D. and Dang, K. W. and Terrill, C. and Nohava, T. and et al.}, year={1999}, pages={1–10} }
 @misc{schetzina_1998, title={Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same}, volume={5,818,072}, number={1998 Oct. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1998} }
 @article{johnson_brown_el-masry_cook_schetzina_kong_edmond_1998, title={Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures}, volume={16}, ISSN={["1071-1023"]}, DOI={10.1116/1.590000}, abstractNote={Growth of III–V nitrides by molecular beam epitaxy (MBE) was studied using rf nitrogen plasma sources. Plasma sources from three different vendors have been tested. All three of the sources have been used to grow high quality GaN. However, the EPI rf source produces an optical emission spectrum that is very rich in the active nitrogen species of 1st-positive excited nitrogen molecules and nitrogen atoms. GaN growth rates at 800 °C of 1 μm/h have been achieved using this source. The MBE-grown GaN films are deposited homoepitaxially on high quality metalorganic vapor phase epitaxy-grown GaN/SiC substrates. With the growth conditions for high quality undoped GaN as a base line, a detailed study of Mg doping for p-type GaN was performed. An acceptor incorporation of 2×1019 cm−3 was measured by both capacitance–voltage and secondary ion mass spectroscopy for a doping source temperature of 290 °C. However, a faceted three-dimensional growth mode was observed by reflection high energy electron diffraction during Mg doping of GaN. Additional studies suggest an interdependence between Mg incorporation and growth surface morphology. Quantum well structures made from the InGaN ternary alloy were grown using a modulated beam MBE method. With this technique, quantum well compositions were controllable, grown with visible luminescence ranging from 400 to 515 nm depending on indium mole fraction. Light emitting diode test structures, combining Mg p-type doping with InGaN quantum wells, were fabricated and tested.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF and Kong, HS and Edmond, JA}, year={1998}, pages={1282–1285} }
 @article{yu_johnson_brown_el-masry_cook_schetzina_1998, title={Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire}, volume={195}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(98)00638-1}, abstractNote={Growth of GaN by MOVPE on mismatched substrates such as sapphire and SiC produces a columnar material consisting of many hexagonal grains ∼0.2–1.0 μm in diameter. However, the epitaxial–lateral-overgrowth (ELO) process for GaN creates a new material – single-crystal GaN. We have studied the ELO process using a MOVPE reactor featuring vertical gas flows and fast substrate rotation to synthesize GaN ELO samples. Characterization experiments consisted of plan-view scanning electron microscopy and vertical-cross-section transmission electron microscopy studies, which disclosed a large reduction in dislocations in the ELO regions of the GaN samples. Panchromatic and monochromatic cathodoluminescence images and spectra were employed to study the spatial variation of the optical properties of the GaN ELO samples.}, number={1-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Yu, ZH and Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1998}, month={Dec}, pages={333–339} }
 @article{johnson_hughes_rowland_cook_schetzina_leonard_kong_edmond_zavada_1997, title={Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy}, volume={175}, ISSN={["1873-5002"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0001866991&partnerID=MN8TOARS}, DOI={10.1016/S0022-0248(96)01019-6}, abstractNote={GaN, AlGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been deposited homoepitaxially onto GaNSiC substrates and heteroepitaxially onto LiGaO2 substrates. LiGaO2 is an ordered and closely-lattice-matched orthorhombic variant of the wurtzite crystal structure of GaN. A low-temperature AlN buffer layer is necessary in order to nucleate GaN on LiGaO2. Thick GaN and AlGaN layers may then be grown once deposition is initiated. InGaN has been grown by MBE at mole fractions of up to 20% as a quantum well between GaN cladding layers. The indium containing structures were deposited onto GaNSiC substrates to focus the development effort on the InGaN growth process rather than on heteroepitaxial nucleation. A modulated beam technique, with alternating short periods of (In, Ga)N and (Ga)N, was used to grow high-quality InGaN. The modulated beam limits the nucleation of metal droplets on the growth surface, which form due to thermodynamic limitations. A narrow PL dominated by band edge luminescence at 421 nm results from this growth technique. Growth of GaN at high temperatures is also reported.}, note={Place: Malibu, CA, USA Publisher: Elsevier Sci B.V.}, number={PART 1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Johnson, MAL and Hughes, WC and Rowland, WH and Cook, JW and Schetzina, JF and Leonard, M and Kong, HS and Edmond, JA and Zavada, J}, year={1997}, month={May}, pages={72–78} }
 @misc{schetzina_1997, title={Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same}, volume={5,679,965}, number={1997 Oct. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1997} }
 @article{johnson_fujita_rowland_bowers_hughes_he_elmasry_cook_schetzina_ren_et al._1997, title={MBE growth and properties of GaN on GaN/SiC substrates}, volume={41}, ISSN={["0038-1101"]}, DOI={10.1016/S0038-1101(96)00169-4}, abstractNote={Abstract Growth of III–V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an r.f. nitrogen plasma source. GaN SiC substrates consisting of ∼ 3 μm thick GaN buffer layers grown on 6HSiC wafers by MOVPE at Cree Research Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties—comparable to the best GaN films grown by MOVPE—as determined from photoluminescence, X-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p -type and n -type layers, respectively. Al x Ga 1 − x N films ( x ∼ 0.06-0.08) and Al x Ga 1 − x N GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes based on double-heterostructures of Al x Ga 1 − x N GaN which emit violet light at ∼400 nm have also been demonstrated. Growth of GaN on LiGaO 2 substrates is also reported for comparison.}, number={2}, journal={SOLID-STATE ELECTRONICS}, author={Johnson, MAL and Fujita, S and Rowland, WH and Bowers, KA and Hughes, WC and He, YW and ElMasry, NA and Cook, JW and Schetzina, JF and Ren, J and et al.}, year={1997}, month={Feb}, pages={213–218} }
 @article{bulman_doverspike_sheppard_weeks_kong_dieringer_edmond_brown_swindell_schetzina_1997, title={Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC}, volume={33}, ISSN={["0013-5194"]}, DOI={10.1049/el:19971025}, abstractNote={Room temperature pulsed-operation lasing has been achieved for the first time in an InGaN laser grown on a 6H-SiC substrate. The laser structure is an 8-well InGaN/GaN MQW having Al0.06Ga0.94N waveguide and Al0.13Ga0.87N cladding layers. The index-guided laser having uncoated cleaved facets emits at 402 nm with a threshold current Ith of 1.2 A (42V), corresponding to a current density of 48 kA/cm2. A narrow line width of 0.8 Å is observed at 1.09 Ith. Far field measurements indicate that the devices operate in the TEM01 mode with FWHP of 5.7 and 19° for the in-plane and perpendicular directions, respectively.}, number={18}, journal={ELECTRONICS LETTERS}, author={Bulman, GE and Doverspike, K and Sheppard, ST and Weeks, TW and Kong, HS and Dieringer, HM and Edmond, JA and Brown, JD and Swindell, JT and Schetzina, JF}, year={1997}, month={Aug}, pages={1556–1557} }
 @article{hughes_boney_johnson_cook_schetzina_1997, title={Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters}, volume={175}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(96)01022-6}, abstractNote={Abstract This paper describes substrate surface preparation techniques used in the development II–VI light emitting diode and laser diode structures on high-quality, bulk ZnSe substrates supplied by Eagle-Picher Industries. The use of ZnSe substrates eliminates many of the problems associated with lattice mismatch in heteroepitaxy of II–VI light emitters on GaAs substrates. However, defects still form during nucleation of an epitaxial layer on ZnSe substrates because of surface roughness, contamination, and defects. We have employed a variety of wet chemical etches, vacuum anneals, plasma treatments, and characterization techniques such as RHEED, Auger electron spectroscopy, and SEM studies to improve the ZnSe substrate surface prior to MBE film growth. A combination of hydrogen plasma exposure and annealing was found to be the most effective way to remove contaminants from ZnSe substrates but less than optimum homoepitaxial quality showed that the surface preparation is more complex than simply cleaning the polished surface. Since polishing can leave residual damage in the form of near-surface defects, the top layer of these substrates was removed by reactive ion etching with BCl 3 . Parameters were chosen such that this etch was homogeneous and smoothed the ZnSe surface. Etch pit density measurements revealed that the polish-induced damage to ZnSe extended up to about 5 μm deep. A dramatic improvement in the characteristics of blue/green light emitting devices was observed for devices grown on ZnSe substrates from which this damaged layer had been removed. This surface preparation procedure has led to the brightest and longest lasting II–VI green LEDs made in the world today.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Hughes, WC and Boney, C and Johnson, MAL and Cook, JW and Schetzina, JF}, year={1997}, month={May}, pages={546–551} }
 @article{khan_chen_yang_sun_lim_temkin_schetzina_shur_1997, title={UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates}, volume={43}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(96)01903-4}, abstractNote={Recently Nakamura et al. have reported on high brightness visible LEDs based on AlGaN-InGaN multiple quantum wells (MQWs) using atmospheric pressure metal-organic chemical vapor deposition (MOCVD) and AlGaN barrier layers around an InxGa1 − xN-InyGa1 − yN multiple quantum well region. We now report the fabrication of high brightness vertical cavity UV, blue and green light emitting diodes using low pressure MOCVD with GaN-InxGa1 − xN multiple quantum wells surrounded by GaN barrier layers. Our device structures over sapphire and cubic (111) spinel substrates consisted of a 10 period GaN-InGaN MQW (25 Å well-50 Å barrier) surrounded by n- and p-GaN layers. Structures with both Mg-doped and undoped quantum wells (active regions) were deposited. Mesa type LED structures were then fabricated using Ti-Al and Ni-Au for the n-and p-ohmic contacts. Light emission was observed in a vertical cavity geometry from the sapphire or the spinel substrate side. For 250 mm diameter mesa devices the series resistances ranged from 10 to 25 Ω. These are some of the lowest reported values. Spectral emission linewidths (FWHM) of 12, 25 and 40 nm were obtained respectively for the UV, blue, and green MQW LEDs. These linewidths are similar to those of Nakamura et al. We also report on optically pumped MQW InGaN-GaN lasers with different quantum well thicknesses. In these devices, we observed the quantum shift related to the subband energy dependence on the well thickness and estimated the effective conduction band discontinuity at the GaN-InGaN heterointerface from these data.}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Khan, MA and Chen, Q and Yang, J and Sun, CJ and Lim, B and Temkin, H and Schetzina, J and Shur, MS}, year={1997}, month={Jan}, pages={265–268} }
 @misc{schetzina_1994, title={Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same}, volume={5351255}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1994} }
 @misc{schetzina_1994, title={Method of fabricating epitaxially deposited ohmic contacts using group II-V I}, volume={5366927}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Schetzina, J. F.}, year={1994} }