solid-state lighting, light-emitting diodes, laser diodes, LEDs, power devices, III-nitride
2024 article
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
2024 article
Growth and characterization of AlInN/GaN superlattices
Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.
2024 journal article
High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 <SUP>°</SUP>C
IEEE PHOTONICS TECHNOLOGY LETTERS, 36(17), 1069–1072.
2024 journal article
Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times
IEEE Electron Device Letters.
2024 article
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
Rogers, D. J., Xue, H., Palmese, E., & Wierer Jr, J. J. (2024, October 28). JOURNAL OF APPLIED PHYSICS, Vol. 136.
2023 journal article
Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
Materials, 16(5), 1890.
2023 article
Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices
Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5.
2023 journal article
Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes
IEEE Journal of Quantum Electronics, 59(2), 1–9.
2023 journal article
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 134(7).
2023 journal article
Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
e-Prime - Advances in Electrical Engineering, Electronics and Energy.
2022 journal article
Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission
IEEE JOURNAL OF QUANTUM ELECTRONICS, 58(2).
2021 journal article
Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
Photonics Research, 10(1), 33.
2021 journal article
Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm
IEEE Journal of Quantum Electronics, 57(6), 1–7.
2021 journal article
Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN
Journal of Applied Physics, 129(12), 125105.
2020 journal article
AlInN/GaN diodes for power electronic devices
Applied Physics Express.
2020 journal article
Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
Journal of Crystal Growth.
2020 journal article
Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering
IEEE Transactions on Electron Devices.
2020 journal article
Electrical properties of MgO/GaN metal-oxide-semiconductor structures
Solid-State Electronics.
2020 journal article
Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy
Journal of Crystal Growth.
2020 journal article
Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition
Journal of Crystal Growth.
2019 journal article
III‐Nitride Micro‐LEDs for Efficient Emissive Displays
Laser & Photonics Reviews.
2019 journal article
On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE
Journal of Crystal Growth.
2019 journal article
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
Journal of Applied Physics.
2019 journal article
Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices
ACS Applied Electronic Materials.
2018 journal article
AlInN for Vertical Power Electronic Devices
IEEE Transactions on Electron Devices.
2018 journal article
Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
Applied Physics Letters, 112(20), 5.
Contributors: W. Sun *, S. Al Muyeed *, R. Song *, * & N. Tansu *
2018 journal article
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching
Applied Physics Letters.
2018 journal article
Ultra-Broadband Optical Gain in III-Nitride Digital Alloys
Scientific Reports, 8, 7.
Contributors: W. Sun *, C. Tan *, * & N. Tansu *
2017 journal article
Effect of interface roughness on Auger recombination in semiconductor quantum wells
Aip Advances, 7(3), 8.
Contributors: C. Tan *, W. Sun *, * & N. Tansu *
2017 journal article
Nitride Semiconductors Preface
Physica Status Solidi a-Applications and Materials Science, 214(8), 2.
2017 journal article
Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
Ieee Transactions on Electron Devices, 64(5), 2291–2297.
Contributors: , J. Dickerson *, A. Allerman*, A. Armstrong *, M. Crawford* & R. Kaplar * *
2017 journal article
Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
Aip Advances, 7(10), 7.
Contributors: S. Al Muyeed *, W. Sun *, X. Wei *, R. Song *, D. Koleske*, N. Tansu *, *
2017 chapter
Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches
In Springer.
2016 journal article
Al0.3Ga0.7N PN diode with breakdown voltage > 1600 V
Electronics Letters, 52(15), 1319–1320.
Contributors: A. Allerman*, A. Armstrong *, A. Fischer *, J. Dickerson *, M. Crawford*, M. King *, M. Moseley*, * , R. Kaplar *
2016 journal article
High voltage and high current density vertical GaN power diodes
Electronics Letters, 52(13), 1170–1171.
Contributors: A. Armstrong *, A. Allerman*, A. Fischer *, M. King *, M. Heukelom*, M. Moseley*, R. Kaplar *, * , M. Crawford*, J. Dickerson *
2016 journal article
III-nitride quantum dots for ultra-efficient solid-state lighting
Laser &Amp; Photonics Reviews, 10(4), 612–622.
Contributors: , N. Tansu *, A. Fischer * & J. Tsao* *
2015 journal article
Advantages of III-nitride laser diodes in solid-state lighting
Physica Status Solidi a-Applications and Materials Science, 212(5), 980–985.
2015 journal article
Defect-enabled electrical current leakage in ultraviolet light-emitting diodes
Physica Status Solidi a-Applications and Materials Science, 212(4), 723–726.
Contributors: M. Moseley*, A. Allerman*, M. Crawford*, * , M. Smith * & L. Biedermann *
2015 journal article
Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
Journal of Applied Physics, 117(13).
Contributors: A. Armstrong *, B. Bryant*, M. Crawford*, D. Koleske*, S. Lee* & *
2015 journal article
Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
Journal of Applied Physics, 117(9).
Contributors: M. Moseley*, A. Allerman*, M. Crawford*, * , M. Smith * & A. Armstrong *
2015 journal article
Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N
Journal of Applied Physics, 117(18).
Contributors: A. Armstrong *, M. Moseley*, A. Allerman*, M. Crawford* & *
2015 journal article
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers
Journal of Crystal Growth, 415, 57–64.
Contributors: D. Koleske*, A. Fischer *, B. Bryant*, P. Kotula * & *
2015 journal article
Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes
Ieee Transactions on Nuclear Science, 62(6), 2912–2918.
Contributors: M. King *, A. Armstrong *, J. Dickerson *, G. Vizkelethy *, R. Fleming *, J. Campbell *, W. Wampler *, I. Kizilyalli *
2015 journal article
Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer
Applied Physics Express, 8(6).
Contributors: , A. Allerman*, E. Skogen*, A. Tauke-Pedretti *, G. Vawter* & I. Montano * *
2015 journal article
Vertical GaN Power Diodes With a Bilayer Edge Termination
Ieee Transactions on Electron Devices, 63(1), 419–425.
Contributors: J. Dickerson *, A. Allerman*, B. Bryant*, A. Fischer *, M. King *, M. Moseley*, A. Armstrong *, R. Kaplar *
2014 journal article
Controlling indium incorporation in InGaN barriers with dilute hydrogen flows
Journal of Crystal Growth, 390, 38–45.
Contributors: D. Koleske*, * , A. Fischer * & S. Lee*
2014 journal article
Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers
Journal of Applied Physics, 115(17), 10.
Contributors: , I. Montano *, M. Crawford* & A. Allerman* *
2014 journal article
Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes
Journal of Applied Physics, 116(5), 053104 (7 pp.).
Contributors: M. Moseley*, A. Allerman*, M. Crawford*, * , M. Smith * & L. Biedermann *
2014 journal article
Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena
Journal of Physical Chemistry C, 118(25), 13330–13345.
Contributors: M. Coltrin*, A. Armstrong *, I. Brener *, W. Chow *, M. Crawford*, A. Fischer *, D. Kelley *, D. Koleske*
2014 journal article
Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
Applied Physics Letters, 105(6), 061106 (4 pp.).
Contributors: , A. Allerman*, I. Montano * & M. Moseley* *
2014 journal article
Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation
Applied Physics Letters, 105(13), 131107 (4 pp.).
Contributors: , A. Allerman*, E. Skogen*, A. Tauke-Pedretti *, C. Alford*, G. Vawter*, I. Montano * *
2014 journal article
Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures
Acs Photonics, 1(10), 906–911.
Contributors: A. Benz*, S. Campione *, M. Moseley*, * , A. Allerman*, J. Wendt*, I. Brener *
2014 journal article
The potential of III‐nitride laser diodes for solid‐state lighting
Physica Status Solidi c.
2014 journal article
Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs
Physica Status Solidi a-Applications and Materials Science, 211(4), 748–751.
2014 journal article
Toward Smart and Ultra-efficient Solid-State Lighting
Advanced Optical Materials, 2(9), 809–836.
Contributors: J. Tsao*, M. Crawford*, M. Coltrin*, A. Fischer *, D. Koleske*, G. Subramania *, G. Wang *, * , R. Karlicek *
2013 journal article
Comparison between blue lasers and light-emitting diodes for future solid-state lighting
Laser & Photonics Reviews, 7(6), 963–993.
2013 chapter
Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches
In Iii-Nitride Based Light Emitting Diodes and Applications (Vol. 126, pp. 11–26).
Contributors: J. Tsao *, * , L. Rohwer *, M. Coltrin*, M. Crawford*, J. Simmons*, P. Hung*, H. Saunders *
2013 journal article
Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy
Nano Letters, 13(11), 5123–5128.
Contributors: S. Howell *, S. Padalkar *, K. Yoon*, Q. Li *, D. Koleske*, * , G. Wang *, L. Lauhon *
2013 journal article
Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light-Emitting Diode Array
Nano Letters, 13(9), 4317–4325.
Contributors: J. Riley*, S. Padalkar *, Q. Li *, P. Lu *, D. Koleske*, * , G. Wang *, L. Lauhon *
2013 book
Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches
In Springer.
2012 journal article
Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells
Journal of Crystal Growth, 355(1), 63–72.
2012 journal article
High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates
Small, 8(11), 1643–1649.
2012 journal article
III- nitride core-shell nanowire arrayed solar cells
Nanotechnology, 23(19).
2012 journal article
Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
Applied Physics Letters, 100(11).
2012 journal article
Top-down fabrication of GaN-based nanorod LEDs and lasers
Light-Emitting Diodes: Materials, Devices, and Applications For Solid State Lighting Xvi, 8278.
Contributors: G. Wang *, Q. Li *, * , J. Figiel*, J. Wright *, T. Luk *, I. Brener *, K. Streubel
2011 journal article
Four-color laser white illuminant demonstrating high color-rendering quality
Optics Express, 19(14), A982–A990. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292876500041&KeyUID=WOS:000292876500041
2011 journal article
III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications
Wide Bandgap Semiconductor Materials and Devices 12, 35(6), 3–11.
Contributors: G. Wang *, Q. Li *, J. Huang *, * , A. Armstrong *, Y. Lin *, P. Upadhya*, R. Prasankumar *
2010 journal article
Silicon impurity-induced layer disordering of AlGaN/AlN superlattices
Applied Physics Letters, 97(5).
Contributors: , A. Allerman* & Q. Li * *
2010 journal article
The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices
Applied Physics Letters, 96(5).
Contributors: , A. Fischer * & D. Koleske* *
2009 journal article
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
Nature Photonics, 3(3), 163–169.
Contributors: , A. David * & M. Megens* *
2005 chapter
III-Nitride LEDs with photonic crystal structures
In S. A. Stockman, H. W. Yao, & E. F. Schubert (Eds.), Light-Emitting Diodes: Research, Manufacturing, and Applications IX (Vol. 5739, pp. 102–107).
Contributors: , M. Krames *, J. Epler*, N. Gardner *, J. Wendt*, M. Sigalas *, S. Brueck *, D. Li *, M. Shagam* *
Ed(s): S. Stockman, H. Yao & E. Schubert
2005 journal article
Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
Applied Physics Letters, 86(11).
2004 journal article
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
Applied Physics Letters, 84(19), 3885–3887.
Contributors: , M. Krames, J. Epler, N. Gardner, M. Craford, J. Wendt*, J. Simmons*, M. Sigalas * *
2003 journal article
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
Applied Physics Letters, 82(14), 2221–2223.
Contributors: Y. Shen *, * , M. Krames *, M. Ludowise*, M. Misra*, F. Ahmed *, A. Kim*, G. Mueller*
2002 journal article
High power LEDs - Technology status and market applications
Physica Status Solidi a-Applied Research, 194(2), 380–388.
Contributors: F. Steranka*, J. Bhat*, D. Collins *, L. Cook*, M. Craford*, R. Fletcher*, N. Gardner *, P. Grillot*
2002 journal article
High-power III-nitride emitters for solid-state lighting
Physica Status Solidi a-Applied Research, 192(2), 237–245.
Contributors: M. Krames *, J. Collins*, N. Gardner *, W. Gotz, C. Lowery*, M. Ludowise*, P. Martin*, G. Mueller*
2001 journal article
High-power AlGaInN flip-chip light-emitting diodes
Applied Physics Letters, 78(22), 3379–3381.
Contributors: , D. Steigerwald*, M. Krames *, J. O'Shea*, M. Ludowise*, G. Christenson*, Y. Shen *, C. Lowery* *
2001 journal article
Performance of high-power AlInGaN light emitting diodes
Physica Status Solidi a-Applied Research, 188(1), 15–21.
Contributors: A. Kim*, W. Gotz, D. Steigerwald*, * , N. Gardner *, J. Sun *, S. Stockman*, P. Martin*
2000 chapter
High-brightness AlGaInN light-emitting diodes
In Light-Emitting Diodes: Research, Manufacturing, and Applications Iv (Vol. 3938, pp. 2–12).
Contributors: M. Krames *, G. Christenson*, D. Collins*, L. Cook*, M. Craford*, A. Edwards*, R. Fletcher*, N. Gardner *
Ed(s): H. Yao, I. Ferguson & E. Schubert
1999 journal article
Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes
Applied Physics Letters, 74(7), 926–928.
1998 journal article
AlxGa1-xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers
Journal of Applied Physics, 84(10), 5436–5440.
1998 journal article
Transition from edge to vertical cavity operation of tunnel contact AlGaAs-GaAs-InGaAs quantum well heterostructure lasers
Applied Physics Letters, 72(7), 797–799.
1998 journal article
Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions
Applied Physics Letters, 72(21), 2742–2744.
1997 journal article
Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents
Applied Physics Letters, 71(16), 2286–2288.
1997 journal article
Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources
Applied Physics Letters, 71(24), 3468–3470.
1997 journal article
Photopumped laser operation of an oxide post GaAs-AlAs superlattice photonic lattice
Applied Physics Letters, 70(9), 1119–1121.
1996 journal article
Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser diodes
Applied Physics Letters, 69(19), 2882–2884.
1995 journal article
ESTABLISHMENT OF A DYNAMIC-MODEL FOR THE P-GE FAR IR LASER
International Journal of Infrared and Millimeter Waves, 16(1), 3–32.
Contributors: P. Coleman * & *
Updated: August 13th, 2021 20:16
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1999 - 1999
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Updated: May 2nd, 2020 09:09
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