Jonathan Joseph Wierer

(Invited) Development of Bipolar Semiconductor Devices for a III-N Material System

Yates, L., Loveless, J., Meyers, V., Rice, A., Steinfeldt, J., Vuong, H. M., … Kaplar, R. J. (2025, November 24). ECS Meeting Abstracts.

Efficient calculations of phonon-assisted Auger recombination in InGaN/GaN quantum wells based on the effective-bond orbital model

Hsiao, F.-C., Wierer, J. J., Chang, Y.-C., & Kish, F. (2025, August 14). Journal of Applied Physics, Vol. 138.

Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

Xue, H., Palmese, E., Sekely, B. J., Gray-Boneker, D., Gonzalez, A., Rogers, D. J., … Wierer, J. J., Jr. (2025, January 6). Journal of Crystal Growth, Vol. 652.

Process temperature dependence of sputtered MgO/n-type GaN metal–oxide–semiconductor capacitors

Shvilberg, L., Xue, H., Palmese, E. J., Heinrich, H. H., Kuan, J., Abad, G. C., … Ihlefeld, J. F. (2025, July 22). Journal of Applied Physics, Vol. 138.

Surface treatments affect GaN surface quantum well emission

Sekely, B. J., Kuhs, C. T., Xue, H., Wierer, J. J., Everitt, H. O., & Muth, J. F. (2025, October 13). Applied Physics Letters.

Visible-spectrum (405–505 nm) low-temperature-deposited deuterated (D) SiNx-SiOy waveguides

Markham, K., Rabbani, M., Hsiao, F.-C., Wierer, J., & Kish, F. (2025, January 27). Applied Physics Letters, Vol. 126.

Comment on “Structural and optical characterization of thin AlInN films on c-plane GaN substrates” [J. Appl. Phys. 134, 075301 (2023)]

Rogers, D. J., Xue, H., Palmese, E., & Wierer, J. J. (2024, October 24). Journal of Applied Physics, Vol. 136.

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, January 11). Journal of Crystal Growth, Vol. 630.

High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400  ^∘ C

Rogers, D. J., Xue, H., Kish, F. A., Hsiao, F.-C., Pezeshki, B., Tselikov, A., & Wierer, J. J. (2024, July 29). IEEE Photonics Technology Letters.

Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times

Palmese, E., Xue, H., Rogers, D. J., & Wierer, J. J. (2024, August 7). IEEE Electron Device Letters, Vol. 45, pp. 1903–1906.

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Wei, X., Muyeed, S. A. A., Xue, H., & Wierer, J. J. (2023, February 24). Materials, Vol. 16, p. 1890.

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices

Shvilberg, L., Mimura, T., Xue, H., Wierer, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE Transactions on Electron Devices, Vol. 5.

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE Transactions on Electron Devices, Vol. 12.

Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes

Xue, H., Muyeed, S. A. A., Palmese, E., Rogers, D., Song, R., Tansu, N., & Wierer, J. J. (2023, February 22). IEEE Journal of Quantum Electronics, Vol. 59, pp. 1–9.

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

Xue, H., Palmese, E., Song, R., Chowdhury, M. I., Strandwitz, N. C., & Wierer, J. J. (2023, August 17). Journal of Applied Physics, Vol. 134.

Thermal oxidation of lattice mismatched Al1-xInxN films on GaN

Palmese, E., Xue, H., Song, R., & Wierer, J. J. (2023, June 28). e-Prime - Advances in Electrical Engineering Electronics and Energy.

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

Fragkos, I. E., Sun, W., Borovac, D., Song, R., Wierer, J. J., & Tansu, N. (2022, January 26). IEEE Journal of Quantum Electronics, Vol. 58, pp. 1–6.

Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Wei, X., Muyeed, S. A. A., Xue, H., Palmese, E., Song, R., Tansu, N., & Wierer, J. J. (2021, October 28). Photonics Research, Vol. 10, p. 33.

Recombination Rates of In_xGa_1−xN/Al_yGa_1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm

Muyeed, S. A. A., Borovac, D., Xue, H., Wei, X., Song, R., Tansu, N., & Wierer, J. J. (2021, September 10). IEEE Journal of Quantum Electronics, Vol. 57, pp. 1–7.

Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN

Palmese, E., Peart, M. R., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2021, March 25). Journal of Applied Physics, Vol. 129, p. 125105.

AlInN/GaN diodes for power electronic devices

Peart, M. R., Borovac, D., Sun, W., Song, R., Tansu, N., & Wierer, J. J. (2020, August 21). Applied Physics Express.

Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Muyeed, S. A. A., Wei, X., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2020, April 8). Journal of Crystal Growth.

Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

Peart, M. R., & Wierer, J. J. (2020, January 8). IEEE Transactions on Electron Devices.

Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Ogidi-Ekoko, O. N., Goodrich, J. C., Howzen, A. J., Peart, M. R., Strandwitz, N. C., Wierer, J. J., & Tansu, N. (2020, August 27). Solid-State Electronics.

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

Borovac, D., Sun, W., Peart, M. R., Song, R., Wierer, J. J., & Tansu, N. (2020, August 27). Journal of Crystal Growth.

Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

Goodrich, J. C., Farinha, T. G., Ju, L., Howzen, A. J., Kundu, A., Ogidi-Ekoko, O. N., … Strandwitz, N. C. (2020, February 19). Journal of Crystal Growth.

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Wierer, J. J., & Tansu, N. (2019, August 12). Laser & Photonics Review.

On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE

Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2019, December 28). Journal of Crystal Growth.

Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers

Muyeed, S. A. A., Sun, W., Peart, M. R., Lentz, R. M., Wei, X., Borovac, D., … Wierer, J. J. (2019, December 3). Journal of Applied Physics.

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

Peart, M. R., Wei, X., Borovac, D., Sun, W., Tansu, N., & Wierer, J. J. (2019, July 12). ACS Applied Electronic Materials.

AlInN for Vertical Power Electronic Devices

Peart, M. R., Tansu, N., & Wierer, J. J. (2018, August 30). IEEE Transactions on Electron Devices.

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

Sun, W., Muyeed, S. A. A., Song, R., Wierer, J. J., & Tansu, N. (2018, May 14). Applied Physics Letters, Vol. 112, p. 5.

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

Wei, X., Muyeed, S. A. A., Peart, M. R., Sun, W., Tansu, N., & Wierer, J. J. (2018, September 17). Applied Physics Letters.

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys

Sun, W., Tan, C.-K., Wierer, J. J., & Tansu, N. (2018, February 9). Scientific Reports, Vol. 8, p. 7.

Effect of interface roughness on Auger recombination in semiconductor quantum wells

Tan, C.-K., Sun, W., Wierer, J. J., & Tansu, N. (2017, March 1). AIP Advances, Vol. 7, p. 8.

Nitride Semiconductors

Feezell, D., Wierer, J., Chowdhury, S., & Shen, S. C. (2017, August 1). Physica Status Solidi (a), Vol. 214, p. 2.

Simulations of Junction Termination Extensions in Vertical GaN Power Diodes

Wierer, J. J., Dickerson, J. R., Allerman, A. A., Armstrong, A. M., Crawford, M. H., & Kaplar, R. J. (2017, March 27). IEEE Transactions on Electron Devices, Vol. 64, pp. 2291–2297.

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Muyeed, S. A. A., Sun, W., Wei, X., Song, R., Koleske, D. D., Tansu, N., & Wierer, J. J. (2017, October 1). AIP Advances, Vol. 7, p. 7.

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Springer.

Al _{0 .3} Ga _0.7 N PN diode with breakdown voltage >1600 V

Allerman, A. A., Armstrong, A. M., Fischer, A. J., Dickerson, J. R., Crawford, M. H., King, M. P., … Kaplar, R. J. (2016, June 10). Electronics Letters, Vol. 52, pp. 1319–1320.

High voltage and high current density vertical GaN power diodes

Armstrong, A. M., Allerman, A. A., Fischer, A. J., King, M. P., Heukelom, M. S., Moseley, M. W., … Dickerson, J. R. (2016, April 29). Electronics Letters, Vol. 52, pp. 1170–1171.

III‐nitride quantum dots for ultra‐efficient solid‐state lighting

Wierer, J. J., Tansu, N., Fischer, A. J., & Tsao, J. Y. (2016, May 23). Laser & Photonics Review, Vol. 10, pp. 612–622.

Advantages of III‐nitride laser diodes in solid‐state lighting

Wierer, J. J., & Tsao, J. Y. (2015, January 14). Physica Status Solidi (a), Vol. 212, pp. 980–985.

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Armstrong, A. M., Bryant, B. N., Crawford, M. H., Koleske, D. D., Lee, S. R., & Wierer, J. J. (2015, April 1). Journal of Applied Physics, Vol. 117.

Defect‐enabled electrical current leakage in ultraviolet light‐emitting diodes

Moseley, M. W., Allerman, A. A., Crawford, M. H., Wierer, J. J., Smith, M. L., & Biedermann, L. B. (2015, March 27). Physica Status Solidi (a), Vol. 212, pp. 723–726.

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

Moseley, M. W., Allerman, A. A., Crawford, M. H., Wierer, J. J., Smith, M. L., & Armstrong, A. M. (2015, March 2). Journal of Applied Physics, Vol. 117.

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Armstrong, A. M., Moseley, M. W., Allerman, A. A., Crawford, M. H., & Wierer, J. J. (2015, May 11). Journal of Applied Physics, Vol. 117.

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., & Wierer, J. J. (2015, January 7). Journal of Crystal Growth, Vol. 415, pp. 57–64.

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., … Kaplar, R. J. (2015, October 29). IEEE Transactions on Nuclear Science, Vol. 62, pp. 2912–2918.

Selective layer disordering in intersubband Al_0.028Ga_0.972N/AlN superlattices with silicon nitride capping layer

Wierer, J. J., Allerman, A. A., Skogen, E. J., Tauke-Pedretti, A., Vawter, G. A., & Montaño, I. (2015, June 1). Applied Physics Express, Vol. 8.

Vertical GaN Power Diodes With a Bilayer Edge Termination

Dickerson, J. R., Allerman, A. A., Bryant, B. N., Fischer, A. J., King, M. P., Moseley, M. W., … Wierer, J. J., Jr. (2015, December 8). IEEE Transactions on Electron Devices, Vol. 63, pp. 419–425.

Controlling indium incorporation in InGaN barriers with dilute hydrogen flows

Koleske, D. D., Wierer, J. J., Fischer, A. J., & Lee, S. R. (2014, January 3). Journal of Crystal Growth, Vol. 390, pp. 38–45.

Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Wierer, J. J., Montaño, I., Crawford, M. H., & Allerman, A. A. (2014, May 2). Journal of Applied Physics, Vol. 115, p. 10.

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Moseley, M., Allerman, A., Crawford, M., Wierer, J. J., Smith, M., & Biedermann, L. (2014, August 4). Journal of Applied Physics, Vol. 116, pp. 053104 (7 pp.).

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Coltrin, M. E., Armstrong, A. M., Brener, I., Chow, W. W., Crawford, M. H., Fischer, A. J., … Wright, J. B. (2014, April 22). The Journal of Physical Chemistry C, Vol. 118, pp. 13330–13345.

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Wierer, J. J., Allerman, A. A., Montaño, I., & Moseley, M. W. (2014, August 11). Applied Physics Letters, Vol. 105, pp. 061106 (4 pp.).

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Wierer, J. J., Allerman, A. A., Skogen, E. J., Tauke-Pedretti, A., Alford, C., Vawter, G. A., & Montaño, I. (2014, September 29). Applied Physics Letters, Vol. 105, pp. 131107 (4 pp.).

Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures

Benz, A., Campione, S., Moseley, M. W., Wierer, J. J., Allerman, A. A., Wendt, J. R., & Brener, I. (2014, August 25). ACS Photonics, Vol. 1, pp. 906–911.

The potential of III‐nitride laser diodes for solid‐state lighting

Wierer, J. J., Tsao, J. Y., & Sizov, D. S. (2014, February 1). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics.

Top–down fabrication and characterization of axial and radial III‐nitride nanowire LEDs

Wang, G. T., Li, Q., Wierer, J. J., Koleske, D. D., & Figiel, J. J. (2014, February 24). Physica Status Solidi (a), Vol. 211, pp. 748–751.

Toward Smart and Ultra‐efficient Solid‐State Lighting

Tsao, J. Y., Crawford, M. H., Coltrin, M. E., Fischer, A. J., Koleske, D. D., Subramania, G. S., … Karlicek, R. F. (2014, June 27). Advanced Optical Materials, Vol. 2, pp. 809–836.

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Wierer, J. J., Tsao, J. Y., & Sizov, D. S. (2013, August 1). Laser & Photonics Review, Vol. 7, pp. 963–993.

Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

Tsao, J. Y., Wierer, J. J., Jr., Rohwer, L. E. S., Coltrin, M. E., Crawford, M. H., Simmons, J. A., … Morkoc, H. (2013, January 1). Topics in Applied Physics, Vol. 126, pp. 11–26.

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Howell, S. L., Padalkar, S., Yoon, K. H., Li, Q., Koleske, D. D., Wierer, J. J., … Lauhon, L. J. (2013, October 7). Nano Letters, Vol. 13, pp. 5123–5128.

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

Riley, J. R., Padalkar, S., Li, Q., Lu, P., Koleske, D. D., Wierer, J. J., … Lauhon, L. J. (2013, August 6). Nano Letters, Vol. 13, pp. 4317–4325.

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Springer.

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

Lee, S. R., Koleske, D. D., Crawford, M. H., & Wierer, J. J. (2012, July 6). Journal of Crystal Growth, Vol. 355, pp. 63–72.

High‐Efficiency, Microscale GaN Light‐Emitting Diodes and Their Thermal Properties on Unusual Substrates

Kim, T., Jung, Y. H., Song, J., Kim, D., Li, Y., Kim, H., … Rogers, J. A. (2012, March 30). Small, Vol. 8, pp. 1643–1649.

III-nitride core–shell nanowire arrayed solar cells

Wierer, J. J., Jr, Li, Q., Koleske, D. D., Lee, S. R., & Wang, G. T. (2012, April 27). Nanotechnology, Vol. 23.

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Wierer, J. J., Koleske, D. D., & Lee, S. R. (2012, March 12). Applied Physics Letters, Vol. 100.

Top-down fabrication of GaN-based nanorod LEDs and lasers

Wang, G. T., Li, Q., Wierer, J., Figiel, J., Wright, J. B., Luk, T. S., … Linder, N. (2012, January 20). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 8278.

(Invited) III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

Wang, G. T., Li, Q., Huang, J., Wierer, J., Armstrong, A., Lin, Y., … Wetzel, C. (2011, April 25). ECS Transactions, Vol. 35, pp. 3–11.

Four-color laser white illuminant demonstrating high color-rendering quality

Optics Express, 19(14), A982–A990. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292876500041&KeyUID=WOS:000292876500041

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

Wierer, J. J., Allerman, A. A., & Li, Q. (2010, August 2). Applied Physics Letters, Vol. 97.

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

Wierer, J. J., Fischer, A. J., & Koleske, D. D. (2010, February 1). Applied Physics Letters, Vol. 96.

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

Wierer, J. J., David, A., & Megens, M. M. (2009, February 22). Nature Photonics, Vol. 3, pp. 163–169.

III-nitride LEDs with photonic crystal structures

Wierer, J. J., Krames, M. R., Epler, J. E., Gardner, N. F., Wendt, J. R., Sigalas, M. M., … Shagam, M. (2005, March 7). (S. A. Stockman, H. W. Yao, & E. F. Schubert, Eds.). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 5739, pp. 102–107.

Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

Gardner, N. F., Kim, J. C., Wierer, J. J., Shen, Y. C., & Krames, M. R. (2005, March 4). Applied Physics Letters, Vol. 86.

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Wierer, J. J., Krames, M. R., Epler, J. E., Gardner, N. F., Craford, M. G., Wendt, J. R., … Sigalas, M. M. (2004, May 3). Applied Physics Letters, Vol. 84, pp. 3885–3887.

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Shen, Y. C., Wierer, J. J., Krames, M. R., Ludowise, M. J., Misra, M. S., Ahmed, F., … Martin, P. S. (2003, April 3). Applied Physics Letters, Vol. 82, pp. 2221–2223.

High Power LEDs - Technology Status and Market Applications

Steranka, F. M., Bhat, J., Collins, D., Cook, L., Craford, M. G., Fletcher, R., … Wierer, J. J. (2002, December 1). Physica Status Solidi (a), Vol. 194, pp. 380–388.

High power LEDs-technology status and market applications

Physica Status Solidi C, (1), 380–388. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=INSPEC&KeyUT=INSPEC:7723540&KeyUID=INSPEC:7723540

High-Power III-Nitride Emitters for Solid-State Lighting

Krames, M. R., Bhat, J., Collins, D., Gardner, N. F., G�tz, W., Lowery, C. H., … Wierer, J. J. (2002, August 1). Physica Status Solidi (a), Vol. 192, pp. 237–245.