Jonathan Joseph Wierer

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Materials, 16(5), 1890.

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices

Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5.

Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes

IEEE Journal of Quantum Electronics, 59(2), 1–9.

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 134(7).

Thermal oxidation of lattice mismatched Al1-xInxN films on GaN

e-Prime - Advances in Electrical Engineering, Electronics and Energy.

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

IEEE JOURNAL OF QUANTUM ELECTRONICS, 58(2).

Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Photonics Research, 10(1), 33.

Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm

IEEE Journal of Quantum Electronics, 57(6), 1–7.

Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN

Journal of Applied Physics, 129(12), 125105.

AlInN/GaN diodes for power electronic devices

Applied Physics Express.

Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Journal of Crystal Growth.

Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

IEEE Transactions on Electron Devices.

Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Solid-State Electronics.

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

Journal of Crystal Growth.

On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE

Journal of Crystal Growth.

Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

Journal of Crystal Growth.

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Laser & Photonics Reviews.

Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers

Journal of Applied Physics.

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

ACS Applied Electronic Materials.

AlInN for Vertical Power Electronic Devices

IEEE Transactions on Electron Devices.

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

Applied Physics Letters, 112(20), 5.

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

Applied Physics Letters.

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys

Scientific Reports, 8, 7.

Effect of interface roughness on Auger recombination in semiconductor quantum wells

Aip Advances, 7(3), 8.

Nitride Semiconductors Preface

Physica Status Solidi a-Applications and Materials Science, 214(8), 2.

Simulations of Junction Termination Extensions in Vertical GaN Power Diodes

Ieee Transactions on Electron Devices, 64(5), 2291–2297.

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Aip Advances, 7(10), 7.

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Springer.

Al0.3Ga0.7N PN diode with breakdown voltage > 1600 V

Electronics Letters, 52(15), 1319–1320.

High voltage and high current density vertical GaN power diodes

Electronics Letters, 52(13), 1170–1171.

III-nitride quantum dots for ultra-efficient solid-state lighting

Laser &Amp; Photonics Reviews, 10(4), 612–622.

Vertical GaN Power Diodes With a Bilayer Edge Termination

Ieee Transactions on Electron Devices, 63(1), 419–425.

Advantages of III-nitride laser diodes in solid-state lighting

Physica Status Solidi a-Applications and Materials Science, 212(5), 980–985.

Defect-enabled electrical current leakage in ultraviolet light-emitting diodes

Physica Status Solidi a-Applications and Materials Science, 212(4), 723–726.

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of Applied Physics, 117(13).

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

Journal of Applied Physics, 117(9).

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Journal of Applied Physics, 117(18).

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

Journal of Crystal Growth, 415, 57–64.

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

Ieee Transactions on Nuclear Science, 62(6), 2912–2918.

Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

Applied Physics Express, 8(6).

Controlling indium incorporation in InGaN barriers with dilute hydrogen flows

Journal of Crystal Growth, 390, 38–45.

Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Journal of Applied Physics, 115(17), 10.

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Journal of Applied Physics, 116(5), 053104 (7 pp.).

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Journal of Physical Chemistry C, 118(25), 13330–13345.

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Applied Physics Letters, 105(6), 061106 (4 pp.).

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Applied Physics Letters, 105(13), 131107 (4 pp.).

Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures

Acs Photonics, 1(10), 906–911.

The potential of III‐nitride laser diodes for solid‐state lighting

Physica Status Solidi c.

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Physica Status Solidi a-Applications and Materials Science, 211(4), 748–751.

Toward Smart and Ultra-efficient Solid-State Lighting

Advanced Optical Materials, 2(9), 809–836.

Comparison between blue lasers and light-emitting diodes for future solid-state lighting

Laser & Photonics Reviews, 7(6), 963–993.

Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Iii-Nitride Based Light Emitting Diodes and Applications (Vol. 126, pp. 11–26).

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Nano Letters, 13(11), 5123–5128.

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light-Emitting Diode Array

Nano Letters, 13(9), 4317–4325.

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Springer.

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

Journal of Crystal Growth, 355(1), 63–72.

High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Small, 8(11), 1643–1649.

III- nitride core-shell nanowire arrayed solar cells

Nanotechnology, 23(19).

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Applied Physics Letters, 100(11).

Top-down fabrication of GaN-based nanorod LEDs and lasers

Light-Emitting Diodes: Materials, Devices, and Applications For Solid State Lighting Xvi, 8278.

Four-color laser white illuminant demonstrating high color-rendering quality

Optics Express, 19(14), A982–A990. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292876500041&KeyUID=WOS:000292876500041

III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

Wide Bandgap Semiconductor Materials and Devices 12, 35(6), 3–11.

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

Applied Physics Letters, 97(5).

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

Applied Physics Letters, 96(5).

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

Nature Photonics, 3(3), 163–169.

III-Nitride LEDs with photonic crystal structures

In S. A. Stockman, H. W. Yao, & E. F. Schubert (Eds.), Light-Emitting Diodes: Research, Manufacturing, and Applications IX (Vol. 5739, pp. 102–107).

Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes

Applied Physics Letters, 86(11).

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Applied Physics Letters, 84(19), 3885–3887.

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Applied Physics Letters, 82(14), 2221–2223.

High power LEDs - Technology status and market applications

Physica Status Solidi a-Applied Research, 194(2), 380–388.

High-power III-nitride emitters for solid-state lighting

Physica Status Solidi a-Applied Research, 192(2), 237–245.

High-power AlGaInN flip-chip light-emitting diodes

Applied Physics Letters, 78(22), 3379–3381.

Performance of high-power AlInGaN light emitting diodes

Physica Status Solidi a-Applied Research, 188(1), 15–21.

High-brightness AlGaInN light-emitting diodes

In Light-Emitting Diodes: Research, Manufacturing, and Applications Iv (Vol. 3938, pp. 2–12).

Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes

Applied Physics Letters, 74(7), 926–928.

AlxGa1-xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers

Journal of Applied Physics, 84(10), 5436–5440.

Transition from edge to vertical cavity operation of tunnel contact AlGaAs-GaAs-InGaAs quantum well heterostructure lasers

Applied Physics Letters, 72(7), 797–799.

Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions

Applied Physics Letters, 72(21), 2742–2744.

Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents

Applied Physics Letters, 71(16), 2286–2288.

Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources

Applied Physics Letters, 71(24), 3468–3470.

Photopumped laser operation of an oxide post GaAs-AlAs superlattice photonic lattice

Applied Physics Letters, 70(9), 1119–1121.

Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser diodes

Applied Physics Letters, 69(19), 2882–2884.

ESTABLISHMENT OF A DYNAMIC-MODEL FOR THE P-GE FAR IR LASER

International Journal of Infrared and Millimeter Waves, 16(1), 3–32.