Jonathan Joseph Wierer

Also known as: Jonathan J. Wierer, Jr.

solid-state lighting, light-emitting diodes, laser diodes, LEDs, power devices, III-nitride

Works (88)

Updated: November 6th, 2024 05:04

2024 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n

author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: ORCID, Web Of Science, NC State University Libraries
Added: December 22, 2023

2024 article

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.

By: H. Xue n, E. Palmese n, B. Sekely n, B. Little n, F. Kish n, J. Muth n, J. Wierer n

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Sources: ORCID, Web Of Science, NC State University Libraries
Added: January 11, 2024

2024 journal article

High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 <SUP>°</SUP>C

IEEE PHOTONICS TECHNOLOGY LETTERS, 36(17), 1069–1072.

By: D. Rogers n, H. Xue n, F. Kish Jr, F. Hsiao n, B. Pezeshki, A. Tselikov, J. Wierer Jr

author keywords: Bandwidth; Temperature measurement; Current density; Modulation; Light emitting diodes; Temperature; Vertical cavity surface emitting lasers; GaN; micro light-emitting diodes (micro-LEDs); modulation; optical communication; differential carrier lifetime
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: ORCID, Web Of Science
Added: August 1, 2024

2024 journal article

Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times

IEEE Electron Device Letters.

By: E. Palmese n, H. Xue n, D. Rogers n & J. Wierer n

Source: ORCID
Added: August 8, 2024

2024 article

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

Rogers, D. J., Xue, H., Palmese, E., & Wierer Jr, J. J. (2024, October 28). JOURNAL OF APPLIED PHYSICS, Vol. 136.

By: D. Rogers, H. Xue, E. Palmese & J. Wierer Jr

Sources: ORCID, Web Of Science, NC State University Libraries
Added: October 24, 2024

2023 journal article

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Materials, 16(5), 1890.

By: X. Wei*, S. Muyeed*, H. Xue n & J. Wierer n

Source: ORCID
Added: October 31, 2023

2023 article

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices

Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5.

By: L. Shvilberg*, T. Mimura*, H. Xue n, J. Wierer Jr, E. Paisley*, H. Heinrich*, J. Ihlefeld*

author keywords: Capacitance measurement; dielectric films; gallium compounds; MIS capacitors; semiconductor-insulator interfaces; sputtering
Sources: Web Of Science, ORCID, NC State University Libraries
Added: July 3, 2023

2023 journal article

Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes

IEEE Journal of Quantum Electronics, 59(2), 1–9.

Source: ORCID
Added: October 31, 2023

2023 journal article

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 134(7).

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: September 5, 2023

2023 journal article

Thermal oxidation of lattice mismatched Al1-xInxN films on GaN

e-Prime - Advances in Electrical Engineering, Electronics and Energy.

By: E. Palmese n, H. Xue n, R. Song* & J. Wierer n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2022 journal article

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

IEEE JOURNAL OF QUANTUM ELECTRONICS, 58(2).

Contributors: J. Wierer n

author keywords: Wide band gap semiconductors; Aluminum gallium nitride; Gallium nitride; Numerical simulation; Light emitting diodes; MOCVD; Substrates; Light emitters; III-nitrides emitters; indium gallium nitride; III-nitride semiconductors; semiconductor physics; semiconductor optoelectronics; solid-state lighting; delta structure; delta indium nitride; indium nitride; pulsed MOCVD growth
Sources: Web Of Science, ORCID, NC State University Libraries
Added: February 28, 2022

2021 journal article

Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Photonics Research, 10(1), 33.

Source: ORCID
Added: October 31, 2023

2021 journal article

Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm

IEEE Journal of Quantum Electronics, 57(6), 1–7.

Source: ORCID
Added: October 31, 2023

2021 journal article

Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN

Journal of Applied Physics, 129(12), 125105.

Source: ORCID
Added: October 31, 2023

2020 journal article

AlInN/GaN diodes for power electronic devices

Applied Physics Express.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2020 journal article

Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

Journal of Crystal Growth.

By: S. Muyeed*, X. Wei*, D. Borovac, R. Song*, N. Tansu* & J. Wierer*

Source: ORCID
Added: October 31, 2023

2020 journal article

Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

IEEE Transactions on Electron Devices.

By: M. Peart* & J. Wierer*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2020 journal article

Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Solid-State Electronics.

Jonathan Wierer

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2020 journal article

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

Journal of Crystal Growth.

Source: ORCID
Added: October 31, 2023

2020 journal article

Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

Journal of Crystal Growth.

Jonathan Wierer

Source: ORCID
Added: October 31, 2023

2019 journal article

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Laser & Photonics Reviews.

By: J. Wierer* & N. Tansu*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2019 journal article

On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE

Journal of Crystal Growth.

By: D. Borovac, W. Sun*, R. Song*, J. Wierer* & N. Tansu*

Source: ORCID
Added: October 31, 2023

2019 journal article

Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers

Journal of Applied Physics.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2019 journal article

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

ACS Applied Electronic Materials.

Jonathan Wierer

Source: ORCID
Added: October 31, 2023

2018 journal article

AlInN for Vertical Power Electronic Devices

IEEE Transactions on Electron Devices.

By: M. Peart*, N. Tansu* & J. Wierer*

Source: ORCID
Added: October 31, 2023

2018 journal article

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

Applied Physics Letters, 112(20), 5.

Contributors: W. Sun*, S. Al Muyeed*, R. Song*, J. Wierer* & N. Tansu*

Source: ORCID
Added: October 31, 2023

2018 journal article

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

Applied Physics Letters.

Jonathan Wierer

Source: ORCID
Added: October 31, 2023

2018 journal article

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys

Scientific Reports, 8, 7.

By: W. Sun*, C. Tan*, J. Wierer* & N. Tansu*

Contributors: W. Sun*, C. Tan*, J. Wierer* & N. Tansu*

TL;DR: This study shows the promising potential of the III- Nitride DAs with tunable ultra-broadband interband optical gain for use in semiconductor optical amplifiers and future III-Nitride photonic integration applications. (via Semantic Scholar)
Source: ORCID
Added: October 31, 2023

2017 journal article

Effect of interface roughness on Auger recombination in semiconductor quantum wells

Aip Advances, 7(3), 8.

By: C. Tan*, W. Sun*, J. Wierer* & N. Tansu*

Contributors: C. Tan*, W. Sun*, J. Wierer* & N. Tansu*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2017 journal article

Nitride Semiconductors Preface

Physica Status Solidi a-Applications and Materials Science, 214(8), 2.

By: D. Feezell, J. Wierer, S. Chowdhury & S. Shen

Contributors: D. Feezell, J. Wierer, S. Chowdhury & S. Shen

Source: ORCID
Added: October 31, 2023

2017 journal article

Simulations of Junction Termination Extensions in Vertical GaN Power Diodes

Ieee Transactions on Electron Devices, 64(5), 2291–2297.

By: J. Wierer*, J. Dickerson*, A. Allerman*, A. Armstrong*, M. Crawford* & R. Kaplar*

Contributors: J. Wierer*, J. Dickerson*, A. Allerman*, A. Armstrong*, M. Crawford* & R. Kaplar*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2017 journal article

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Aip Advances, 7(10), 7.

By: S. Al Muyeed*, W. Sun*, X. Wei*, R. Song*, D. Koleske*, N. Tansu*, J. Wierer*

Contributors: S. Al Muyeed*, W. Sun*, X. Wei*, R. Song*, D. Koleske*, N. Tansu*, J. Wierer*

Source: ORCID
Added: October 31, 2023

2017 chapter

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Springer.

Jonathan Wierer

Source: ORCID
Added: October 31, 2023

2016 journal article

Al0.3Ga0.7N PN diode with breakdown voltage &gt; 1600 V

Electronics Letters, 52(15), 1319–1320.

By: A. Allerman*, A. Armstrong*, A. Fischer*, J. Dickerson*, M. Crawford*, M. King*, M. Moseley*, J. Wierer*, R. Kaplar*

Contributors: A. Allerman*, A. Armstrong*, A. Fischer*, J. Dickerson*, M. Crawford*, M. King*, M. Moseley*, J. Wierer*, R. Kaplar*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2016 journal article

High voltage and high current density vertical GaN power diodes

Electronics Letters, 52(13), 1170–1171.

By: A. Armstrong*, A. Allerman*, A. Fischer*, M. King*, M. Heukelom*, M. Moseley*, R. Kaplar*, J. Wierer*, M. Crawford*, J. Dickerson*

Contributors: A. Armstrong*, A. Allerman*, A. Fischer*, M. King*, M. Heukelom*, M. Moseley*, R. Kaplar*, J. Wierer*, M. Crawford*, J. Dickerson*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2016 journal article

III-nitride quantum dots for ultra-efficient solid-state lighting

Laser &Amp; Photonics Reviews, 10(4), 612–622.

By: J. Wierer*, N. Tansu*, A. Fischer* & J. Tsao*

Contributors: J. Wierer*, N. Tansu*, A. Fischer* & J. Tsao*

Source: ORCID
Added: October 31, 2023

2015 journal article

Advantages of III-nitride laser diodes in solid-state lighting

Physica Status Solidi a-Applications and Materials Science, 212(5), 980–985.

By: J. Wierer* & J. Tsao*

Contributors: J. Wierer* & J. Tsao*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2015 journal article

Defect-enabled electrical current leakage in ultraviolet light-emitting diodes

Physica Status Solidi a-Applications and Materials Science, 212(4), 723–726.

By: M. Moseley*, A. Allerman*, M. Crawford*, J. Wierer*, M. Smith* & L. Biedermann*

Contributors: M. Moseley*, A. Allerman*, M. Crawford*, J. Wierer*, M. Smith* & L. Biedermann*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2015 journal article

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of Applied Physics, 117(13).

By: A. Armstrong*, B. Bryant*, M. Crawford*, D. Koleske*, S. Lee* & J. Wierer*

Contributors: A. Armstrong*, B. Bryant*, M. Crawford*, D. Koleske*, S. Lee* & J. Wierer*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2015 journal article

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

Journal of Applied Physics, 117(9).

By: M. Moseley*, A. Allerman*, M. Crawford*, J. Wierer*, M. Smith* & A. Armstrong*

Contributors: M. Moseley*, A. Allerman*, M. Crawford*, J. Wierer*, M. Smith* & A. Armstrong*

Source: ORCID
Added: October 31, 2023

2015 journal article

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Journal of Applied Physics, 117(18).

By: A. Armstrong*, M. Moseley*, A. Allerman*, M. Crawford* & J. Wierer*

Contributors: A. Armstrong*, M. Moseley*, A. Allerman*, M. Crawford* & J. Wierer*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2015 journal article

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

Journal of Crystal Growth, 415, 57–64.

By: D. Koleske*, A. Fischer*, B. Bryant*, P. Kotula* & J. Wierer*

Contributors: D. Koleske*, A. Fischer*, B. Bryant*, P. Kotula* & J. Wierer*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2015 journal article

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

Ieee Transactions on Nuclear Science, 62(6), 2912–2918.

By: M. King*, A. Armstrong*, J. Dickerson*, G. Vizkelethy*, R. Fleming*, J. Campbell*, W. Wampler*, I. Kizilyalli* ...

Contributors: M. King*, A. Armstrong*, J. Dickerson*, G. Vizkelethy*, R. Fleming*, J. Campbell*, W. Wampler*, I. Kizilyalli* ...

Source: ORCID
Added: October 31, 2023

2015 journal article

Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

Applied Physics Express, 8(6).

By: J. Wierer*, A. Allerman*, E. Skogen*, A. Tauke-Pedretti*, G. Vawter* & I. Montano*

Contributors: J. Wierer*, A. Allerman*, E. Skogen*, A. Tauke-Pedretti*, G. Vawter* & I. Montano*

Source: ORCID
Added: October 31, 2023

2015 journal article

Vertical GaN Power Diodes With a Bilayer Edge Termination

Ieee Transactions on Electron Devices, 63(1), 419–425.

By: J. Dickerson*, A. Allerman*, B. Bryant*, A. Fischer*, M. King*, M. Moseley*, A. Armstrong*, R. Kaplar* ...

Contributors: J. Dickerson*, A. Allerman*, B. Bryant*, A. Fischer*, M. King*, M. Moseley*, A. Armstrong*, R. Kaplar* ...

Source: ORCID
Added: October 31, 2023

2014 journal article

Controlling indium incorporation in InGaN barriers with dilute hydrogen flows

Journal of Crystal Growth, 390, 38–45.

By: D. Koleske*, J. Wierer*, A. Fischer* & S. Lee*

Contributors: D. Koleske*, J. Wierer*, A. Fischer* & S. Lee*

Source: ORCID
Added: October 31, 2023

2014 journal article

Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Journal of Applied Physics, 115(17), 10.

By: J. Wierer*, I. Montano*, M. Crawford* & A. Allerman*

Contributors: J. Wierer*, I. Montano*, M. Crawford* & A. Allerman*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2014 journal article

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Journal of Applied Physics, 116(5), 053104 (7 pp.).

By: M. Moseley*, A. Allerman*, M. Crawford*, J. Wierer*, M. Smith* & L. Biedermann*

Contributors: M. Moseley*, A. Allerman*, M. Crawford*, J. Wierer*, M. Smith* & L. Biedermann*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2014 journal article

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Journal of Physical Chemistry C, 118(25), 13330–13345.

By: M. Coltrin*, A. Armstrong*, I. Brener*, W. Chow*, M. Crawford*, A. Fischer*, D. Kelley*, D. Koleske* ...

Contributors: M. Coltrin*, A. Armstrong*, I. Brener*, W. Chow*, M. Crawford*, A. Fischer*, D. Kelley*, D. Koleske* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2014 journal article

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Applied Physics Letters, 105(6), 061106 (4 pp.).

By: J. Wierer*, A. Allerman*, I. Montano* & M. Moseley*

Contributors: J. Wierer*, A. Allerman*, I. Montano* & M. Moseley*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2014 journal article

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Applied Physics Letters, 105(13), 131107 (4 pp.).

By: J. Wierer*, A. Allerman*, E. Skogen*, A. Tauke-Pedretti*, C. Alford*, G. Vawter*, I. Montano*

Contributors: J. Wierer*, A. Allerman*, E. Skogen*, A. Tauke-Pedretti*, C. Alford*, G. Vawter*, I. Montano*

Source: ORCID
Added: October 31, 2023

2014 journal article

Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures

Acs Photonics, 1(10), 906–911.

By: A. Benz*, S. Campione*, M. Moseley*, J. Wierer*, A. Allerman*, J. Wendt*, I. Brener*

Contributors: A. Benz*, S. Campione*, M. Moseley*, J. Wierer*, A. Allerman*, J. Wendt*, I. Brener*

Source: ORCID
Added: October 31, 2023

2014 journal article

The potential of III‐nitride laser diodes for solid‐state lighting

Physica Status Solidi c.

By: J. Wierer*, J. Tsao* & D. Sizov*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: November 25, 2023

2014 journal article

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Physica Status Solidi a-Applications and Materials Science, 211(4), 748–751.

By: G. Wang*, Q. Li*, J. Wierer*, D. Koleske* & J. Figiel*

Contributors: G. Wang*, Q. Li*, J. Wierer*, D. Koleske* & J. Figiel*

Source: ORCID
Added: October 31, 2023

2014 journal article

Toward Smart and Ultra-efficient Solid-State Lighting

Advanced Optical Materials, 2(9), 809–836.

By: J. Tsao*, M. Crawford*, M. Coltrin*, A. Fischer*, D. Koleske*, G. Subramania*, G. Wang*, J. Wierer*, R. Karlicek*

Contributors: J. Tsao*, M. Crawford*, M. Coltrin*, A. Fischer*, D. Koleske*, G. Subramania*, G. Wang*, J. Wierer*, R. Karlicek*

Source: ORCID
Added: October 31, 2023

2013 journal article

Comparison between blue lasers and light-emitting diodes for future solid-state lighting

Laser & Photonics Reviews, 7(6), 963–993.

By: J. Wierer*, J. Tsao* & D. Sizov*

Contributors: J. Wierer*, J. Tsao* & D. Sizov*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2013 chapter

Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Iii-Nitride Based Light Emitting Diodes and Applications (Vol. 126, pp. 11–26).

By: J. Tsao*, J. Wierer*, L. Rohwer*, M. Coltrin*, M. Crawford*, J. Simmons*, P. Hung*, H. Saunders* ...

Contributors: J. Tsao*, J. Wierer*, L. Rohwer*, M. Coltrin*, M. Crawford*, J. Simmons*, P. Hung*, H. Saunders* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2013 journal article

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Nano Letters, 13(11), 5123–5128.

By: S. Howell*, S. Padalkar*, K. Yoon*, Q. Li*, D. Koleske*, J. Wierer*, G. Wang*, L. Lauhon*

Contributors: S. Howell*, S. Padalkar*, K. Yoon*, Q. Li*, D. Koleske*, J. Wierer*, G. Wang*, L. Lauhon*

TL;DR: The experimental analyses are coupled with finite difference time domain simulations to provide mechanistic understanding of spatial variations in carrier generation and collection, which is essential to the development of heterogeneous novel architecture solar cell devices. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2013 journal article

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light-Emitting Diode Array

Nano Letters, 13(9), 4317–4325.

By: J. Riley*, S. Padalkar*, Q. Li*, P. Lu*, D. Koleske*, J. Wierer*, G. Wang*, L. Lauhon*

Contributors: J. Riley*, S. Padalkar*, Q. Li*, P. Lu*, D. Koleske*, J. Wierer*, G. Wang*, L. Lauhon*

TL;DR: Tomographic analysis of the In distribution, interface morphology, and dopant clustering of InGaN/GaN multiquantum wells in LEDs reveals material quality comparable to that of planar LED QWs. (via Semantic Scholar)
Source: ORCID
Added: October 31, 2023

2013 book

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

In Springer.

Jonathan Wierer

Source: ORCID
Added: October 31, 2023

2012 journal article

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

Journal of Crystal Growth, 355(1), 63–72.

By: S. Lee*, D. Koleske*, M. Crawford* & J. Wierer*

Contributors: S. Lee*, D. Koleske*, M. Crawford* & J. Wierer*

Source: ORCID
Added: October 31, 2023

2012 journal article

High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Small, 8(11), 1643–1649.

By: T. Kim*, Y. Jung*, J. Song*, D. Kim*, Y. Li*, H. Kim*, I. Song*, J. Wierer* ...

Contributors: T. Kim*, Y. Jung*, J. Song*, D. Kim*, Y. Li*, H. Kim*, I. Song*, J. Wierer* ...

TL;DR: Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts. (via Semantic Scholar)
Source: ORCID
Added: October 31, 2023

2012 journal article

III- nitride core-shell nanowire arrayed solar cells

Nanotechnology, 23(19).

By: J. Wierer*, Q. Li*, D. Koleske*, S. Lee* & G. Wang*

Contributors: J. Wierer*, Q. Li*, D. Koleske*, S. Lee* & G. Wang*

TL;DR: A hybrid nanowire–film architecture consisting of a vertically aligned array of InGaN/GaN multi-quantum well core–shell nanowires which are electrically connected by a coalesced p-InGaN canopy layer is demonstrated, demonstrating a route forward for high-efficiency III-nitride solar cells. (via Semantic Scholar)
Source: ORCID
Added: October 31, 2023

2012 journal article

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Applied Physics Letters, 100(11).

By: J. Wierer*, D. Koleske* & S. Lee*

Contributors: J. Wierer*, D. Koleske* & S. Lee*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2012 journal article

Top-down fabrication of GaN-based nanorod LEDs and lasers

Light-Emitting Diodes: Materials, Devices, and Applications For Solid State Lighting Xvi, 8278.

By: G. Wang*, Q. Li*, J. Wierer*, J. Figiel*, J. Wright*, T. Luk*, I. Brener*, K. Streubel ...

Contributors: G. Wang*, Q. Li*, J. Wierer*, J. Figiel*, J. Wright*, T. Luk*, I. Brener*, K. Streubel ...

Source: ORCID
Added: October 31, 2023

2011 journal article

Four-color laser white illuminant demonstrating high color-rendering quality

Optics Express, 19(14), A982–A990. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292876500041&KeyUID=WOS:000292876500041

By: A. Neumann, J. Wierer, W. Davis, Y. Ohno, S. Brueck & J. Tsao

Contributors: A. Neumann, J. Wierer, W. Davis, Y. Ohno, S. Brueck & J. Tsao

Source: ORCID
Added: October 31, 2023

2011 journal article

III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

Wide Bandgap Semiconductor Materials and Devices 12, 35(6), 3–11.

By: G. Wang*, Q. Li*, J. Huang*, J. Wierer*, A. Armstrong*, Y. Lin*, P. Upadhya*, R. Prasankumar* ...

Contributors: G. Wang*, Q. Li*, J. Huang*, J. Wierer*, A. Armstrong*, Y. Lin*, P. Upadhya*, R. Prasankumar* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2010 journal article

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

Applied Physics Letters, 97(5).

By: J. Wierer*, A. Allerman* & Q. Li*

Contributors: J. Wierer*, A. Allerman* & Q. Li*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2010 journal article

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

Applied Physics Letters, 96(5).

By: J. Wierer*, A. Fischer* & D. Koleske*

Contributors: J. Wierer*, A. Fischer* & D. Koleske*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2009 journal article

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

Nature Photonics, 3(3), 163–169.

By: J. Wierer*, A. David* & M. Megens*

Contributors: J. Wierer*, A. David* & M. Megens*

Source: ORCID
Added: October 31, 2023

2005 chapter

III-Nitride LEDs with photonic crystal structures

In S. A. Stockman, H. W. Yao, & E. F. Schubert (Eds.), Light-Emitting Diodes: Research, Manufacturing, and Applications IX (Vol. 5739, pp. 102–107).

By: J. Wierer*, M. Krames*, J. Epler*, N. Gardner*, J. Wendt*, M. Sigalas*, S. Brueck*, D. Li*, M. Shagam*

Contributors: J. Wierer*, M. Krames*, J. Epler*, N. Gardner*, J. Wendt*, M. Sigalas*, S. Brueck*, D. Li*, M. Shagam*

Ed(s): S. Stockman, H. Yao & E. Schubert

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2005 journal article

Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes

Applied Physics Letters, 86(11).

By: N. Gardner, J. Kim, J. Wierer*, Y. Shen & M. Krames

Contributors: N. Gardner, J. Kim, J. Wierer*, Y. Shen & M. Krames

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2004 journal article

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Applied Physics Letters, 84(19), 3885–3887.

By: J. Wierer*, M. Krames, J. Epler, N. Gardner, M. Craford, J. Wendt*, J. Simmons*, M. Sigalas*

Contributors: J. Wierer*, M. Krames, J. Epler, N. Gardner, M. Craford, J. Wendt*, J. Simmons*, M. Sigalas*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2003 journal article

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Applied Physics Letters, 82(14), 2221–2223.

By: Y. Shen*, J. Wierer*, M. Krames*, M. Ludowise*, M. Misra*, F. Ahmed*, A. Kim*, G. Mueller* ...

Contributors: Y. Shen*, J. Wierer*, M. Krames*, M. Ludowise*, M. Misra*, F. Ahmed*, A. Kim*, G. Mueller* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2002 journal article

High power LEDs - Technology status and market applications

Physica Status Solidi a-Applied Research, 194(2), 380–388.

By: F. Steranka*, J. Bhat*, D. Collins*, L. Cook*, M. Craford*, R. Fletcher*, N. Gardner*, P. Grillot* ...

Contributors: F. Steranka*, J. Bhat*, D. Collins*, L. Cook*, M. Craford*, R. Fletcher*, N. Gardner*, P. Grillot* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2002 journal article

High-power III-nitride emitters for solid-state lighting

Physica Status Solidi a-Applied Research, 192(2), 237–245.

By: M. Krames*, J. Collins*, N. Gardner*, W. Gotz, C. Lowery*, M. Ludowise*, P. Martin*, G. Mueller* ...

Contributors: M. Krames*, J. Collins*, N. Gardner*, W. Gotz, C. Lowery*, M. Ludowise*, P. Martin*, G. Mueller* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2001 journal article

High-power AlGaInN flip-chip light-emitting diodes

Applied Physics Letters, 78(22), 3379–3381.

Contributors: J. Wierer*, D. Steigerwald*, M. Krames*, J. O'Shea*, M. Ludowise*, G. Christenson*, Y. Shen*, C. Lowery* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2001 journal article

Performance of high-power AlInGaN light emitting diodes

Physica Status Solidi a-Applied Research, 188(1), 15–21.

By: A. Kim*, W. Gotz, D. Steigerwald*, J. Wierer*, N. Gardner*, J. Sun*, S. Stockman*, P. Martin* ...

Contributors: A. Kim*, W. Gotz, D. Steigerwald*, J. Wierer*, N. Gardner*, J. Sun*, S. Stockman*, P. Martin* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

2000 chapter

High-brightness AlGaInN light-emitting diodes

In Light-Emitting Diodes: Research, Manufacturing, and Applications Iv (Vol. 3938, pp. 2–12).

Contributors: M. Krames*, G. Christenson*, D. Collins*, L. Cook*, M. Craford*, A. Edwards*, R. Fletcher*, N. Gardner* ...

Ed(s): H. Yao, I. Ferguson & E. Schubert

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: October 31, 2023

1999 journal article

Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes

Applied Physics Letters, 74(7), 926–928.

By: J. Wierer*, D. Kellogg* & N. Holonyak*

Contributors: J. Wierer*, D. Kellogg* & N. Holonyak*

Source: ORCID
Added: October 31, 2023

1998 journal article

AlxGa1-xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers

Journal of Applied Physics, 84(10), 5436–5440.

By: P. Evans*, J. Wierer* & N. Holonyak*

Contributors: P. Evans*, J. Wierer* & N. Holonyak*

Source: ORCID
Added: October 31, 2023

1998 journal article

Transition from edge to vertical cavity operation of tunnel contact AlGaAs-GaAs-InGaAs quantum well heterostructure lasers

Applied Physics Letters, 72(7), 797–799.

By: J. Wierer*, P. Evans* & N. Holonyak*

Contributors: J. Wierer*, P. Evans* & N. Holonyak*

Source: ORCID
Added: October 31, 2023

1998 journal article

Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions

Applied Physics Letters, 72(21), 2742–2744.

By: J. Wierer*, P. Evans*, N. Holonyak* & D. Kellogg*

Contributors: J. Wierer*, P. Evans*, N. Holonyak* & D. Kellogg*

Source: ORCID
Added: October 31, 2023

1997 journal article

Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents

Applied Physics Letters, 71(16), 2286–2288.

By: J. Wierer*, P. Evans* & N. Holonyak*

Contributors: J. Wierer*, P. Evans* & N. Holonyak*

Source: ORCID
Added: October 31, 2023

1997 journal article

Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources

Applied Physics Letters, 71(24), 3468–3470.

By: J. Wierer*, P. Evans*, N. Holonyak* & D. Kellogg*

Contributors: J. Wierer*, P. Evans*, N. Holonyak* & D. Kellogg*

Source: ORCID
Added: October 31, 2023

1997 journal article

Photopumped laser operation of an oxide post GaAs-AlAs superlattice photonic lattice

Applied Physics Letters, 70(9), 1119–1121.

By: P. Evans*, J. Wierer* & N. Holonyak*

Contributors: P. Evans*, J. Wierer* & N. Holonyak*

Source: ORCID
Added: October 31, 2023

1996 journal article

Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser diodes

Applied Physics Letters, 69(19), 2882–2884.

By: J. Wierer*, S. Maranowski*, N. Holonyak*, P. Evans* & E. Chen*

Contributors: J. Wierer*, S. Maranowski*, N. Holonyak*, P. Evans* & E. Chen*

Source: ORCID
Added: October 31, 2023

1995 journal article

ESTABLISHMENT OF A DYNAMIC-MODEL FOR THE P-GE FAR IR LASER

International Journal of Infrared and Millimeter Waves, 16(1), 3–32.

By: P. Coleman* & J. Wierer*

Contributors: P. Coleman* & J. Wierer*

Source: ORCID
Added: October 31, 2023

Employment

Updated: August 13th, 2021 20:16

2021 - present

North Carolina State University Raleigh, NC, US
Professor Electrical and Computer Engineering

2015 - 2021

Lehigh University Bethlehem, PA, US
Associate Professor Electrical and Computer Engineering

2008 - 2015

Sandia National Laboratories Albuquerque, NM, US
Principal Member of Technical Staff Semiconductor Materials and Device Sciences Department

2004 - 2008

Lumileds Lighting/Philips Lumileds Lighting San Jose, CA, US
Senior Scientist Advanced Laboratories

2000 - 2004

Lumileds Lighting Co San Jose, CA, US
Staff Scientist Advanced Laboratories

2000 - 2000

San Jose State University San Jose, CA, US
Instructor Department of Chemical and Materials Engineering

1999 - 2000

Lumileds/Agilent/Hewlett Packard San Jose, CA, US
Research and Development Engineer III-V Materials Development

1999 - 1999

Hewlett-Packard San Jose , CA, US
Hardware Design Engineer Fiber Optic Division

1994 - 1999

University of Illinois at Urbana Champaign Urbana, Illinois, US
Graduate Research Assistant Electrical and Computer Engineering

1993 - 1994

University of Illinois at Urbana Champaign Urbana, Illinois, US
Undergraduate Research Assistant Electrical and Computer Engineering

Education

Updated: May 2nd, 2020 09:09

1995 - 1999

University of Illinois at Urbana Champaign Urbana, Illinois, US
Doctor of Philosophy

1994 - 1995

University of Illinois at Urbana Champaign Urbana, Illinois, US
Master of Science Electrical and Computer Engineering

1990 - 1994

University of Illinois at Urbana Champaign Urbana, Illinois, US
Bachelor of Science Electical and Computer Engineering

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