@article{kim_kim_lee_seo_2013, title={Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on Si and Ge substrates}, volume={52}, number={10}, journal={Japanese Journal of Applied Physics}, author={Kim, J. and Kim, J. and Lee, Y. A. and Seo, H.}, year={2013} }
 @article{lucovsky_kim_wu_zeller_2013, title={Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites}, volume={31}, ISSN={["2166-2746"]}, DOI={10.1116/1.4773923}, abstractNote={Electron spin resonance (ESR) studies on bulk-quenched, noncrystalline (nc-) silica glasses (henceforth, nc-SiO2) have distinguished between (1) pre-existing process-induced defects introduced either after growth or annealing at high temperatures and (2) x-ray or γ-ray radiation or energetic electron particle-created defects. The ESR activity in these pre-existing defects is activated by x-rays. Similar pre-exiting defects have been demonstrated for remote plasma-deposited thin films of nc-SiO2 and nc-GeO2. Concentrations of pre-existing defects increase exponentially with increasing quenching and annealing temperatures. This is always the case for so-called “dry silicas” with no detectable Si–OH bonding. Nonbonding O-hole centers or nonbonding O-associated hole centers are also detected in dry silicas but only after significant x-ray, γ-ray, or energetic electron irradiation. Pre-existing defect has also been detected by second derivative O K pre-edge x-ray absorption spectroscopy in thermally grown and remote plasma-deposited nc-SiO2 and nc-GeO2 thin films. These spectra display singlet and triplet features that can be symmetry state labeled according to Tanabe–Sugano diagrams. This is demonstrated by combining ab initio theory and experiment by identifying the pre-existing defects as vacated O-atom sites in which an O-atom has never been resident.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Lucovsky, Gerald and Kim, Jinwoo and Wu, Kun and Zeller, Daniel}, year={2013}, month={Jan} }
 @article{lucovsky_zeller_kim_wu_2013, title={Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites}, volume={428}, ISSN={["1742-6596"]}, DOI={10.1088/1742-6596/428/1/012017}, abstractNote={Three related topics are addressed in this article: (i) X-ray spectroscopy (XAS) studies of remote plasma deposited (RPD) nc-SiO2 and nc-GeO2 emphasizing (a) band-edge states and (b) pre-existing bonding defects; (ii) interpretation of X-ray absorption and photoemission spectra based on many electron theory, and in particluar charge transfer multiplets (CTs); and (iii) band-edge electronic structure and intrinsic defects in nc-SiO2 and nc-GeO2 thin films and their interfaces with Si and Ge substrates. The most significant result is the identification of local atomic structure in medium range order (MRO) clusters in which the pre-existing defects are embedded. These defects are vacated O-atom sites in which O-atoms have never been resident. They are confined to 1 nm scale chemically-ordered clusters distributed non-periodically with quartz-structured 4-fold coordinated Si(Ge) and 2-fold coordinated O bonding in 12-atom regular rings. Vacated O-atom sites defects are formed during processing and annealing, and reducing macroscopic as well as local bond-strain strain. They are qualitatively different, and readily distinguished from defects introduced by electrical, and by X-ray, γ-ray or high energy electron stressing of nc-SiO2 and nc-GeO2.}, journal={XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012}, author={Lucovsky, Gerald and Zeller, Daniel and Kim, JinWoo and Wu, Kun}, year={2013} }
 @inproceedings{lucovsky_kim_2013, title={Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies}, booktitle={2013 14th international conference on ultimate integration on silicon (ulis)}, author={Lucovsky, G. and Kim, J.}, year={2013}, pages={174–177} }
 @article{lucovsky_parsons_zeller_kim_2013, title={Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon}, volume={52}, ISSN={["1347-4065"]}, DOI={10.7567/jjap.52.04cr10}, abstractNote={ 
 This article addresses low defect densities in hydrogenated amorphous silicon, a-Si1-x
                  :H
                     x
                   with approximately 10 at. % bonded H, x∼0.1. Based low defect densities at mid-gap, ∼0.5 to 1×1016 cm-3, a-Si:H thin films have been integrated into photovoltaic (PV) devices and thin film transistors (TFT's). Amorphous Si (a-Si) thin films with no detectable bonded-H have been used as precursors for polycrystalline gate electrodes in microelectronic applications. PV and TFT alloys have been deposited by glow discharge (GD), remote plasma-enhanced chemical vapor deposition (RPECVD), and reactive magnetron sputtering (RMS) with different bonded-H content determined by deposition precursors and substrate temperatures. Two conditions are required for the lowest Si dangling bond densities: (i) a monohydride, Si–H, concentration of ∼10 at. % H, and (ii) deposition, and/or a post-deposition annealing at 240 to 300 °C. 
 }, number={4}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Lucovsky, Gerry and Parsons, Greg and Zeller, Daniel and Kim, Jinwoo}, year={2013}, month={Apr} }
 @article{lucovsky_kim_2013, title={Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys}, volume={31}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Kim, J.}, year={2013} }
 @article{yoon_yan_ostrom_kim_rozgonyi_2012, title={Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon}, volume={101}, number={22}, journal={Applied Physics Letters}, author={Yoon, Y. and Yan, Y. X. and Ostrom, N. P. and Kim, J. and Rozgonyi, G.}, year={2012} }
 @article{yoon_paudyal_kim_ok_kulshreshtha_johnston_rozgonyi_2012, title={Effect of nickel contamination on high carrier lifetime n-type crystalline silicon}, volume={111}, number={3}, journal={Journal of Applied Physics}, author={Yoon, Y. and Paudyal, B. and Kim, J. and Ok, Y. W. and Kulshreshtha, P. and Johnston, S. and Rozgonyi, G.}, year={2012} }
 @article{yoon_paudyal_kim_ok_kulshreshtha_johnston_rozgonyi_2012, title={Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012)}, volume={111}, number={4}, journal={Journal of Applied Physics}, author={Yoon, Y. and Paudyal, B. and Kim, J. and Ok, Y. W. and Kulshreshtha, P. and Johnston, S. and Rozgonyi, G.}, year={2012} }
 @article{cho_seo_kim_kim_kim_kim_2011, title={Characterization on bandedge electronic structure of MgO added Bi1.5Zn1.0Nb1.5O7 gate dielectrics for ZnO-thin film transistors}, volume={14}, number={1}, journal={Electrochemical and Solid State Letters}, author={Cho, N. G. and Seo, H. and Kim, D. H. and Kim, H. G. and Kim, J. and Kim, I. D.}, year={2011}, pages={G4–7} }
 @article{seo_baker_hervier_kim_whitten_somorjai_2011, title={Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion}, volume={11}, ISSN={1530-6984 1530-6992}, url={http://dx.doi.org/10.1021/nl1039378}, DOI={10.1021/nl1039378}, abstractNote={True n-type doping of titanium oxide without formation of midgap states would expand the use of metal oxides for charge-based devices. We demonstrate that plasma-assisted fluorine insertion passivates defect states and that fluorine acts as an n-type donor in titanium oxide. This enabled us to modify the Fermi level and transport properties of titanium oxide outside the limits of O vacancy doping. The origin of the electronic structure modification is explained by ab initio calculation.}, number={2}, journal={Nano Letters}, publisher={American Chemical Society (ACS)}, author={Seo, Hyungtak and Baker, L. Robert and Hervier, Antoine and Kim, Jinwoo and Whitten, J. L. and Somorjai, Gabor A.}, year={2011}, month={Feb}, pages={751–756} }
 @article{lucovsky_kim_2011, title={Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2}, volume={11}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2011.5089}, abstractNote={The paper uses remote plasma assisted deposition, oxidation and nitridation processes for depositing thin films of metallic TiN on crystalline sapphire (0001) substrates. These films on sapphire substrates are being studied as window materials for high power radio frequency (RF) power tubes. A sequence of four process steps has been performed in a reactor chamber that isolates the deposition and surface-processing chamber from the plasma generation region. The chamber is part of an ultra-high-vacuum (UHV) compatible multi-chamber cluster in which the sequence of four process steps can be interrupted after each step, and surface chemistry changes can be identified by in-line Auger electron spectroscopy (AES). The four process steps, performed after an ex-situ chemical clean and blow-dry in nitrogen gas, are (i) a remote plasma-assisted oxidation (RPAO) in which surface contaminants including adventitious carbon are removed; (ii) a remote plasma-assisted nitridation (RPAN) process which forms a superficial layer of generic AION used to increase surface adhesion of the TiN films; (iii) a remote plasma-enhanced chemical-vapor deposition (RPECVD) process for deposition of 2 to 5 nm thick TiN films, and finally (iv) a second RPAN step that increases the ratio of Ti-N bonding in the TiN films with respect to adventitious O-atom incorporation from the Ti precursor, Ti tetra-butoxide.}, number={9}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Lucovsky, Gerald and Kim, Jinwoo}, year={2011}, month={Sep}, pages={7962–7968} }
 @article{seo_cho_kim_bobade_park_lee_choi_2010, title={Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature}, volume={96}, number={22}, journal={Applied Physics Letters}, author={Seo, H. and Cho, Y. J. and Kim, J. and Bobade, S. M. and Park, K. Y. and Lee, J. and Choi, D. K.}, year={2010} }