Jinwoo Kim

Kim, J., Kim, J., Lee, Y. A., & Seo, H. (2013). Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on Si and Ge substrates. Japanese Journal of Applied Physics, 52(10).

Lucovsky, G., Kim, J., Wu, K., & Zeller, D. (2013). Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1). https://doi.org/10.1116/1.4773923

Lucovsky, G., Zeller, D., Kim, J. W., & Wu, K. (2013). Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites. XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428. https://doi.org/10.1088/1742-6596/428/1/012017

Lucovsky, G., & Kim, J. (2013). Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies. 2013 14th international conference on ultimate integration on silicon (ulis), 174–177.

Lucovsky, G., Parsons, G., Zeller, D., & Kim, J. (2013). Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon. JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4). https://doi.org/10.7567/jjap.52.04cr10

Lucovsky, G., & Kim, J. (2013). Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

Yoon, Y., Yan, Y. X., Ostrom, N. P., Kim, J., & Rozgonyi, G. (2012). Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon. Applied Physics Letters, 101(22).

Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. (2012). Effect of nickel contamination on high carrier lifetime n-type crystalline silicon. Journal of Applied Physics, 111(3).

Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. (2012). Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012). Journal of Applied Physics, Vol. 111.

Cho, N. G., Seo, H., Kim, D. H., Kim, H. G., Kim, J., & Kim, I. D. (2011). Characterization on bandedge electronic structure of MgO added Bi1.5Zn1.0Nb1.5O7 gate dielectrics for ZnO-thin film transistors. Electrochemical and Solid State Letters, 14(1), G4–7.

Seo, H., Baker, L. R., Hervier, A., Kim, J., Whitten, J. L., & Somorjai, G. A. (2011). Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion. Nano Letters, 11(2), 751–756. https://doi.org/10.1021/nl1039378

Lucovsky, G., & Kim, J. (2011, September). Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968. https://doi.org/10.1166/jnn.2011.5089

Seo, H., Cho, Y. J., Kim, J., Bobade, S. M., Park, K. Y., Lee, J., & Choi, D. K. (2010). Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature. Applied Physics Letters, 96(22).