@article{gobien_murty_scattergood_goodwin_koch_2010, title={Creep behavior of ultra-fine grained Zn-4.5Al}, volume={527}, ISSN={["1873-4936"]}, DOI={10.1016/j.msea.2010.08.020}, abstractNote={Creep tests were performed at 295 and 373 K on a cryogenically ball-milled Zn–4.5Al alloy. Creep tests on the as-milled microstructure having an average grain size of 260 nm showed clear signs of a threshold stress. The same material after a targeted heat treatment showed no signs of a threshold stress for the same alloy with an average grain size of 510 nm. In both cases stress exponent (n) values close to 1 and activation energies close to that of grain boundary diffusion were noted. Potential causes of the threshold stress are proposed as being a nanocrystalline oxide dispersion or non-uniform solute segregation, each of which could potentially interfere with grain boundary vacancy transfer mechanisms.}, number={27-28}, journal={MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING}, author={Gobien, J. M. and Murty, K. L. and Scattergood, R. O. and Goodwin, F. and Koch, C. C.}, year={2010}, month={Oct}, pages={7382–7386} }
 @article{gobien_scattergood_goodwin_koch_2009, title={Mechanical behavior of bulk ultra-fine-grained Zn-Al die-casting alloys}, volume={518}, ISSN={["1873-4936"]}, DOI={10.1016/j.msea.2009.04.023}, abstractNote={The mechanical properties of Zn–4 wt% Al casting alloys are compared after various processing methods including sand casting, die-casting, and high energy cryogenic ball milling. For the cast structures there is an increase in strength when transitioning from a coarse sand casting microstructure to a finer grained thin-section die-casting. This is in contrast to a decrease in strength and increase in ductility seen when the cast structure is broken up by high energy cryogenic ball milling to a uniform ultra-fine grain scale. The ultra-fine grained structures produced by cryogenic ball milling subjected to a range of isothermal heat treatments follow the Hall–Petch behavior over the range of grain sizes studied.}, number={1-2}, journal={MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING}, author={Gobien, J. M. and Scattergood, R. O. and Goodwin, F. E. and Koch, C. C.}, year={2009}, month={Aug}, pages={84–88} }
 @article{aleksov_gobien_li_prater_sitar_2006, title={Silicon-on-diamond - An engineered substrate for electronic applications}, volume={15}, ISSN={["0925-9635"]}, DOI={10.1016/j.diamond.2005.09.012}, abstractNote={Silicon on Diamond (SOD) is a substrate engineered to address the major challenges of silicon-based ULSI technology, in particular, to provide for enhanced thermal management and charge confinement. The SOD concept is achieved by joining a thin, single crystalline Si device layer to a highly oriented diamond (HOD) layer that serves as an electrical insulator, heat spreader and supporting substrate. Therefore, SOD represents an alternative SOI concept, where the thermally insulating SiO2 has been replaced by highly thermally conductive diamond. Initial experiments and theoretical assessments have been aimed at demonstrating the improved thermal management properties of fabricated SOD wafers and comparing them to Si and SOI [A. Aleksov, X. Li, N. Govindaraju, J.M. Gobien, S.D. Wolter, J.T. Prater, Z. Sitar, Silicon on Diamond: an advanced Silicon on Insulator technology, Diamond and Related Materials, 14, 308–313 (2005).], [A. Aleksov, S.D. Wolter, J.T. Prater, Z. Sitar, Fabrication and Thermal Evaluation of Silicon on Diamond Wafers, Journal of Electronic Materials, 34 (2005) 1089.]. The experimental results are in good agreement with the values obtained by finite element modeling (FEM). The results show that for a 1.5 μm thick Si device layer, SOD can sustain more than 10 times higher power than SOI. This in turn will permit a more than 3-fold greater integration density of circuits fabricated on SOD as compared to SOI. Having validated the superior thermal management properties of SOD, the second task has been to compare device operation on SOD and SOI to identify whether the Si layer degrades during the SOD fabrication process. In addition, the analysis of the interface properties between the Si device layer and diamond is important in order to better understand the operation of devices on SOD and identify their limitations. For this reason, Schottky and pn-junction diodes were fabricated on the Si device layer of SOD and SOI wafers. The first results of the electrical analyses indicated that there are no additional leakage currents in SOD devices compared to devices on SOI. In addition, CV measurements indicated no differences in the device behavior i.e. no additional charge trapping with respect to SOI in the frequency range of 1 kHz–10 MHz.}, number={2-3}, journal={DIAMOND AND RELATED MATERIALS}, author={Aleksov, A and Gobien, JM and Li, X and Prater, JT and Sitar, Z}, year={2006}, pages={248–253} }
 @article{aleksov_li_govindaraju_gobien_wolter_prater_sitar_2005, title={Silicon-on-diamond: An advanced silicon-on-insulator technology}, volume={14}, ISSN={["1879-0062"]}, DOI={10.1016/j.diamond.2005.01.019}, abstractNote={Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75–100 μm thick and serves as an electrical insulator, heat spreader and substrate. In this paper, we focus on the thermal evaluation of SOD with a Si device layer on the nucleation side of the diamond film. The obtained results indicated that SOD can sustain up to 10-times higher power loads than SOI. The results were experimentally obtained by R(T) measurements of micro-heaters deposited on the Si device layer and by thermal imaging. 3D finite element thermal simulations using ANSYS confirmed that these numbers are in good agreement with expectations.}, number={3-7}, journal={DIAMOND AND RELATED MATERIALS}, author={Aleksov, A and Li, X and Govindaraju, N and Gobien, JM and Wolter, SD and Prater, JT and Sitar, Z}, year={2005}, pages={308–313} }