John M. Zavada

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields

Applied Physics Letters, 99(12).

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Luminescence spectroscopy of europium doped gallium nitride powder prepared by a Na flux method

Physica Status Solidi. A, Applications and Materials Science, 208(1), 156–160.

Mid-infrared emission characteristics and energy transfer processes in doubly doped Tm, Tb: KPb2Br5 and Tm, Nd: KPb2Br5

Optical Materials, 33(7), 985–988.

Near infrared photonic devices based on Er-doped GaN and InGaN

Optical Materials, 33(7), 1066–1070.

Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

Optical Materials, 33(7), 1059–1062.

Strong substrate effects of Joule heating in graphene electronics

Applied Physics Letters, 99(23), 233114.

Weak ferromagnetism of antiferromagnetic domains in graphene with defects

Physical Review B, 84(16).

Electrical and magnetic properties of GaN codoped with Eu and Si

Journal of Applied Physics, 107(1).

Electrically controlled magnetic switching based on graphene-magnet composite structures

Journal of Applied Physics, 107(6), 064507.

Electron spin relaxation in carbon nanotubes

Physical Review B, 82(15).

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

Applied Physics Letters, 96(3).

Er-doped GaN and InxGa1-xN for optical communications

[Review of ]. Rare earth doped iii-nitrides for optoelectronic and spintronic applications, 124, 115–157.

First-principles analysis of electron-phonon interactions in graphene

Physical Review B, 81(12).

Graphene spin capacitor for magnetic field sensing

Applied Physics Letters, 97(1), 013106.

Growth and optical spectroscopy of Ho-doped KPb2Cl5 for infrared solid-state lasers

Journal of Crystal Growth, 312(8), 1154–1156.

Surface polar phonon dominated electron transport in graphene

Applied Physics Letters, 97(23), 232105.

Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

Applied Physics Letters, 94(11).

Effect of Si codoping on Eu3+ luminescence in GaN

Journal of Applied Physics, 105(4).

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

APPLIED PHYSICS LETTERS, 94(13).

Erbium-doped GaN optical amplifiers operating at 1.54 mu m

Applied Physics Letters, 95(11).

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

Applied Physics Letters, 95(2).

Photoluminescence properties of erbium doped InGaN epilayers

Applied Physics Letters, 95(4).

Spectroscopic characterization of Praseodymium doped Gallium Nitride powder prepared by a Na flux method

Journal of Alloys and Compounds, 488(2), 628–631.

Spectroscopic studies of the 1.5 mu M (I-4(15/2) -> I-4(13/2)) emission from polycrystalline ceramic Er:YAG and Er:KPb2Cl5

Journal of Alloys and Compounds, 488(2), 624–627.

Current-injected 1.54 mu m light emitting diodes based on erbium-doped GaN

Applied Physics Letters, 93(3).

Dynamics of ultraviolet emissions in Tm-doped AIN using above band gap excitation

Applied Physics Letters, 93(6).

Electrical Control of Exchange Bias Mediated by Graphene

Physical Review Letters, 101(14).

Magnetic polaron for a spin memory application

Journal of Applied Physics, 104(8), 084306.

Magnetoresistance in bilayer graphene via ferromagnet proximity effects

Physical Review B, 77(23).

Nonvolatile Memory via Spin Polaron Formation

IEEE Transactions on Nanotechnology, 7(4), 480–483.

Correlation between photoluminescence and magnetic properties of GaMnN films

APPLIED PHYSICS LETTERS, 91(24).

Electrical Manipulation of Nonvolatile Spin Cell Based on Diluted Magnetic Semiconductor Quantum Dots

IEEE Transactions on Electron Devices, 54(5), 1032–1039.

Imaging properties of a metallic photonic crystal

Journal of Applied Physics, 101(11), 113105.

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

Spin field effect transistor with a graphene channel

Applied Physics Letters, 91(15), 153105.

Tunable waveguiding in electrically programmable VO2-based photonic crystals

JOURNAL OF APPLIED PHYSICS, 99(11).

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).