James Tweedie

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592

Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023). Demonstration of near-ideal Schottky contacts to Si-doped AlN. APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023). High conductivity in Ge-doped AlN achieved by a non-equilibrium process. APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022). High electron mobility in AlN:Si by point and extended defect management. JOURNAL OF APPLIED PHYSICS, 132(18). https://doi.org/10.1063/5.0124589

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. APPLIED PHYSICS EXPRESS, 15(5). https://doi.org/10.35848/1882-0786/ac6566

Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022). Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates. APPLIED PHYSICS LETTERS, 120(20). https://doi.org/10.1063/5.0092937

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81

Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021). High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing. APPLIED PHYSICS LETTERS, 118(2). https://doi.org/10.1063/5.0038628

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. APPLIED PHYSICS LETTERS, 118(11). https://doi.org/10.1063/5.0042857

Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2019). Structural characteristics of m-plane AlN substrates and homoepitaxial films. JOURNAL OF CRYSTAL GROWTH, 507, 389–394. https://doi.org/10.1016/j.jcrysgro.2018.07.012

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). The polarization field in Al-rich AlGaN multiple quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58. https://doi.org/10.7567/1347-4065/ab07a9

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017). (Invited) Material Considerations for the Development of III-nitride Power Devices. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36. https://doi.org/10.1149/08007.0029ecst

Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers. APPLIED PHYSICS LETTERS, 111(15). https://doi.org/10.1063/1.5000720

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). Growth and characterization of AlxGa1-xN lateral polarity structures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042. https://doi.org/10.1002/pssa.201431740

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014). Properties of AlN based lateral polarity structures. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264. https://doi.org/10.1002/pssc.201300287

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014). Schottky contact formation on polar and non-polar AlN. JOURNAL OF APPLIED PHYSICS, 116(19). https://doi.org/10.1063/1.4901954

Bryan, I., Akouala, C.-R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014). Surface preparation of non-polar single-crystalline AlN substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457. https://doi.org/10.1002/pssc.201300401

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013). Comparative study of etching high crystalline quality AlN and GaN. JOURNAL OF CRYSTAL GROWTH, 366, 20–25. https://doi.org/10.1016/j.jcrysgro.2012.12.141

Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., … Sitar, Z. (2013). Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements. Journal of Applied Physics, 113(10), 103504. https://doi.org/10.1063/1.4794094

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Kirste, R., Mita, S., Hussey, L., Hoffmann, M. P., Guo, W., Bryan, I., … Sitar, Z. (2013). Polarity control and growth of lateral polarity structures in AlN. Applied Physics Letters, 102(18). https://doi.org/10.1063/1.4804575

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013). X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN. JOURNAL OF APPLIED PHYSICS, 113(12). https://doi.org/10.1063/1.4798352

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., … Sitar, Z. (2012). Optical signature of Mg-doped GaN: Transfer processes. PHYSICAL REVIEW B, 86(7). https://doi.org/10.1103/physrevb.86.075207

Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R.-C., & Sitar, Z. (2012). Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587. https://doi.org/10.1002/pssc.201100435

Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., … Sitar, Z. (2011). 265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization. 2011 Conference on Lasers and Electro-Optics (CLEO). https://doi.org/10.1364/cleo_si.2011.ctuu2

Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., … Sitar, Z. (2011). Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535. https://doi.org/10.1149/1.3560527

Acharya, A. R., Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., & Collazo, R. (2011). Observation of NH2 species on tilted InN (01(1)over-bar1) facets. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(4). https://doi.org/10.1116/1.3596619

Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011). On the strain in n-type GaN. APPLIED PHYSICS LETTERS, 99(14). https://doi.org/10.1063/1.3647772

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., … Khan, A. (2011). Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201000964

Xie, J., Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., & Sitar, Z. (2011). Strain in Si doped GaN and the Fermi level effect. APPLIED PHYSICS LETTERS, 98(20). https://doi.org/10.1063/1.3589978

Paisley, E. A., Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., … Maria, J.-P. (2011). Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. NATURE COMMUNICATIONS, 2. https://doi.org/10.1038/ncomms1470

Kirste, R., Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., … Hoffmann, A. (2011). Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN. Journal of Applied Physics, 110(9), 093503. https://doi.org/10.1063/1.3656987

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48. https://doi.org/10.1002/pssa.200982629

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE. JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324. https://doi.org/10.1016/j.jcrysgro.2009.09.011

Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., & Sitar, Z. (2010). Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. Journal of Applied Physics, 108(4), 043510. https://doi.org/10.1063/1.3467522

Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. (2010). The effect of N-polar GaN domains as Ohmic contacts. APPLIED PHYSICS LETTERS, 97(12). https://doi.org/10.1063/1.3491173

Tweedie, J., Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., & Sitar, Z. (2010). X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 108(4). https://doi.org/10.1063/1.3457149

Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., … Sitar, Z. (2008). The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition. APPLIED PHYSICS LETTERS, 92(4). https://doi.org/10.1063/1.2840192

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Point defect management in GaN by Fermi-level control during growth. Gallium nitride materials and devices ix, 8986.