@article{rathkanthiwar_reddy_quinones_loveless_kamiyama_bagheri_khachariya_eldred_moody_mita_et al._2023, title={Anderson transition in compositionally graded p-AlGaN}, volume={134}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/5.0176419}, DOI={10.1063/5.0176419}, abstractNote={Mg-doped, graded AlGaN films showed the formation of an impurity band and high, temperature-invariant p-conductivity even for doping levels well below the Mott transition. However, compensating point defects disrupted the impurity band, resulting in an Anderson transition from the impurity band to valence band conduction and a more than tenfold reduction in room-temperature conductivity. This is the first demonstration of Anderson-like localization in AlGaN films.}, number={19}, journal={JOURNAL OF APPLIED PHYSICS}, author={Rathkanthiwar, Shashwat and Reddy, Pramod and Quinones, Cristyan E. and Loveless, James and Kamiyama, Masahiro and Bagheri, Pegah and Khachariya, Dolar and Eldred, Tim and Moody, Baxter and Mita, Seiji and et al.}, year={2023}, month={Nov} }
 @article{bagheri_quinones-garcia_khachariya_loveless_guan_rathkanthiwar_reddy_kirste_mita_tweedie_et al._2023, title={High conductivity in Ge-doped AlN achieved by a non-equilibrium process}, volume={122}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/5.0146439}, DOI={10.1063/5.0146439}, abstractNote={Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previously demonstrated shallow donor state in Si-implanted AlN, Ge implantation also showed a shallow donor behavior in AlN with an ionization energy ∼80 meV. Ge showed a 3× higher conductivity than its Si counterpart for a similar doping level. Photoluminescence spectroscopy indicated that higher conductivity for Ge-doped AlN was achieved primarily due to lower compensation. This is the highest n-type conductivity reported for AlN doped with Ge to date and demonstration of technologically useful conductivity in Ge-doped AlN.}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Bagheri, Pegah and Quinones-Garcia, Cristyan and Khachariya, Dolar and Loveless, James and Guan, Yan and Rathkanthiwar, Shashwat and Reddy, Pramod and Kirste, Ronny and Mita, Seiji and Tweedie, James and et al.}, year={2023}, month={Apr} }