@article{das_satpathy_bhattacharya_veliadis_deshpande_bhargava_2023, title={Determination of Parameters of Symmetrical Six-Phase Permanent Magnet Synchronous Machines}, DOI={10.1109/IEMDC55163.2023.10238906}, abstractNote={This paper presents offline methods to determine different parameters of Symmetrical Six-Phase (SSP) Permanent Magnet Synchronous Machines (PMSMs). Accurate estimations of different parameters are crucial for proper machine modeling, control, and performance estimations. This paper discusses two offline methods to accurately determine different inductances and the stator resistance of SSP-PMSMs using a single-phase AC source. A method to calculate the Permanent Magnet (PM) flux linkage is also discussed. Machine parameters of a high-speed, low-inductance SSP-PMSM are determined using both methods. The determined parameters are compared with Finite Element Analysis (FEA)-based simulation results and the results are presented in this paper.}, journal={2023 IEEE INTERNATIONAL ELECTRIC MACHINES & DRIVES CONFERENCE, IEMDC}, author={Das, Partha Pratim and Satpathy, Subhransu and Bhattacharya, Subhashish and Veliadis, Victor and Deshpande, Uday and Bhargava, Brij}, year={2023} }
 @article{veliadis_2023, title={Monolithic Bidirectional WBG Switches Rekindle Power Electronics Technology [Expert View]}, volume={10}, ISSN={["2329-9215"]}, DOI={10.1109/MPEL.2023.3235466}, abstractNote={There are numerous mass volume power applications where it is necessary to control the flow of bidirectional power, including electric vehicles (vehicle to grid, vehicle to home, and vehicle to vehicle), distributed and grid-tie power systems using regenerated energy and/or energy storage components, and solid-state circuit breaker protection. Silicon carbide (SiC) and gallium nitride (GaN) based bidirectional power switches can enable these applications with their compelling advantages of high efficiency, high blocking voltage capability, and low system weight and volume. In particular, monolithic switches that allow for bidirectional symmetric conduction and voltage blocking with a chip area close to that of a similarly rated unidirectional switch are ideally suited to fuel a revolution in power electronics technology.}, number={1}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Veliadis, Victor}, year={2023}, month={Mar}, pages={71–75} }
 @article{mazumder_voss_dowling_conway_hall_kaplar_pickrell_flicker_binder_chowdhury_et al._2023, title={Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources}, volume={11}, ISSN={["2168-6785"]}, DOI={10.1109/JESTPE.2023.3277828}, abstractNote={This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.}, number={4}, journal={IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS}, author={Mazumder, Sudip K. and Voss, Lars F. and Dowling, Karen M. and Conway, Adam and Hall, David and Kaplar, Robert J. and Pickrell, Gregory W. and Flicker, Jack and Binder, Andrew T. and Chowdhury, Srabanti and et al.}, year={2023}, month={Aug}, pages={3957–3982} }
 @article{kolli_parashar_kokkonda_bhattacharya_veliadis_2023, title={Switching Loss Analysis of Three-Phase Three-Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs}, ISSN={["1048-2334"]}, DOI={10.1109/APEC43580.2023.10131392}, abstractNote={The recent advancement in the technology of SiC MOSFETs has spurred interest in designing compact and high switching frequency (10–20 kHz) power converters. However, grid-integration of these power converters at medium voltage (MV) scale would require a conventional transformer. With the development of new high voltage (HV) 10 kV and 15 kV SiC MOSFETs, these converters can directly interface with medium voltage (MV) grids without the need for line-frequency transformers, using simple two-level and three-level topologies. The application of these devices is currently being explored in all MV Applications (8 kV to 30 kV) like Solid State Transformer, MV Drives, Power Conditioning Systems, and MVDC isolators. This paper discusses application of 10 kV SiC MOSFETs and JBS Diodes for enabling Asynchronous Microgrid Power Conditioning System (AMPCS). This medium voltage power converter is enabled by series-connection of devices, in a Three-Level Neutral Point Clamped (3L-NPC) configuration. The voltage balancing of these series-connected devices is achieved by using R C-snubbers. This paper addresses the different conduction modes and switching sequences of a 3L-NPC pole, which is used as building block for the three-phase converter. The switching loss analysis, for various snubber values, is presented for the MOSFETs and the clamping diodes along with experimental results. This research helps in providing an overview of switching losses that are disspated through the device (and heatsink) and through the snubber resistor in a 3L-NPC convertor pole.}, journal={2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC}, author={Kolli, Nithin and Parashar, Sanket and Kokkonda, Raj Kumar and Bhattacharya, Subhashish and Veliadis, Victor}, year={2023}, pages={2353–2360} }
 @article{satpathy_das_bhattacharya_veliadis_2022, title={A New Switching Strategy for a GaN-based Three-Level Active Neutral Point Clamped Converter}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE50734.2022.9947699}, abstractNote={This paper investigates a suitable switching strategy for a GaN-based three-level active neutral point clamped (3L-ANPC) converter. The 3L-ANPC operation is considered at 800V DC bus with the use of 650V GaN devices. The different switching modes for obtaining the zero state result in short-loop and long-loop commutations. A parallel operation of zero states termed full-mode is preferable for reducing conduction losses. However, this results in a multi-loop commutation producing high voltage stress across the inner devices. This paper proposes a modified full-mode switching strategy to mitigate this issue by a timed switching sequence involving clamping devices. The proposed switching mode involves active switching of the clamping device in 3L-ANPC for coupling and decoupling the long loop path. The commutation process for the proposed switching mode is explained in detail in this paper. Simulation results are presented using the device Spice model and parasitic inductances of a designed 3L-ANPC phase leg. The voltage stress and loss results determined from simulation results are compared with existing switching modes. A three-level double pulse test circuit is presented, and experimental test results are provided for the proposed switching mode.}, journal={2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Satpathy, Subhransu and Das, Partha Pratim and Bhattacharya, Subhashish and Veliadis, Victor}, year={2022} }
 @article{kokkonda_bhattacharya_veliadis_panayiotou_2022, title={A SiC based Two-Stage Pulsed Power Converter System for Laser Diode Driving Applications}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE50734.2022.9947820}, abstractNote={This paper discusses the unique driving requirements of a laser diode array and evaluates potential converter configurations to meet those requirements. A two-stage capacitive energy storage based pulsed power converter system consisting of a phase shifted full bridge (PSFB) based capacitor charging power supply (CCPS) and a buck based pulse current source with inductor energy recovery has been adopted. Buck based pulse current source with inductor energy recovery enabled by SiC FETs allows significant reduction in energy loss and required energy storage capacitance when compared to conventionally used linear current regulator. A reconfigured pulse forming circuit has been proposed for the pulse current source which mitigates the effect of the output parasitic inductance on the laser diode without the need for an additional freewheeling diode across the load. A pulsed laser diode driver capable of driving 280 V laser diode arrays at 56 kW peak pulse power has been designed and a full-scale hardware prototype has been built. The complete system has been experimentally validated by generating 50 A current pulses at 250 V output voltage (12.5 kW) which proves the feasibility of the proposed converter configuration for high pulse power laser diode driving applications.}, journal={2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Kokkonda, Raj Kumar and Bhattacharya, Subhashish and Veliadis, Victor and Panayiotou, Chrysanthos}, year={2022} }
 @article{yun_lynch_morgan_xing_jin_qianb_kang_amarasinghe_ransom_veliadis_et al._2022, title={Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)}, ISSN={["1063-6854"]}, DOI={10.1109/ISPSD49238.2022.9813639}, abstractNote={This paper reports the detailed comparison of packaged level, 6.5 kV rated 4H-SiC power MOSFET, MOSFET co-packaged with JBS diode (Co-Pack), and monolithically integrated 6.5 kV 4H-SiC MOSFET and JBS diode (JBSFET). JBSFET was designed to disable the PN turn for reliability purposes and save the chip and process cost from the one-chip integration and single metal scheme. Static and dynamic electrical characteristics of stand-alone MOSFET, Co-Pack, and JBSFET are compared to signify the benefit of JBSFET in terms of performance, reliability, and economical point of view.}, journal={2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)}, author={Yun, Nick and Lynch, Justin and Morgan, Adam J. and Xing, Dang and Jin, Michael and Qianb, Jiashu and Kang, Minseok and Amarasinghe, Voshadhi and Ransom, John and Veliadis, Victor and et al.}, year={2022}, pages={249–252} }
 @article{das_satpathy_bhattacharya_veliadis_2022, title={Design Considerations of Multi-Phase Multilevel Inverters for High-Power Density Traction Drive Applications}, DOI={10.1109/ITEC53557.2022.9813937}, abstractNote={This paper presents the effect of multi-phase machines in Three-Level (3L) Active Neutral-Point Clamped (ANPC) inverter design for high-speed traction drive applications. In this work, GaN-based 3L-ANPC inverters are considered to drive high-speed Permanent Magnet Synchronous Machines (PMSMs) with an 800V DC bus. Two different analytical models are developed to calculate the DC bus capacitor and dv/dt filter requirements of the 3L-ANPC inverters. Using the analytical models, the requirement of the DC bus capacitor and dv/dt filter sizes are compared for driving three-phase, six-phase symmetrical, and asymmetrical PMSMs. Another model is developed from experimental Double Pulse Test (DPT) data to calculate the heat sink size requirements for driving the three types of PMSMs mentioned above. A discussion on the Common Mode Voltage (CMV) is also provided. Finally, a comparison is made in terms of DC bus capacitor, dv/dt filter, heat sink size requirements, and common-mode voltages for the three types of drives. The analytical models are verified in simulation, and the results are presented in this paper.}, journal={2022 IEEE/AIAA TRANSPORTATION ELECTRIFICATION CONFERENCE AND ELECTRIC AIRCRAFT TECHNOLOGIES SYMPOSIUM (ITEC+EATS 2022)}, author={Das, Partha Pratim and Satpathy, Subhransu and Bhattacharya, Subhashish and Veliadis, Victor}, year={2022}, pages={23–30} }
 @article{das_satpathy_bhattacharya_veliadis_2022, title={Generalized Control Technique for Three-Level Inverter Fed Six-Phase Permanent Magnet Synchronous Machines Under Fault Conditions}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE50734.2022.9947672}, abstractNote={This paper presents a control technique of a GaN-based Three-Level (3L) Active Neutral Point Clamped (ANPC) inverter fed high-speed six-phase Permanent Magnet Synchronous Machine (PMSM) under both Open Circuit Fault (OCF) and Short Circuit Fault (SCF) conditions. The loss of one or more phases due to OCF or SCF in PMSMs can generate a high torque ripple. A high torque ripple can disrupt the operation of electric drives and even bring the drive to a standstill. Smooth operation under any fault conditions is becoming necessary to increase the reliability of the electric drives. This paper discusses an optimization method that calculates the operating points in different fault conditions while maximizing the torque without exceeding the rated line current rating of the inverter/ motor. The optimization method also provides the torque limit in post-fault conditions without compromising the speed for both one and two isolated neutral point configurations. The post-fault operating points are implemented using a control technique that can be achieved seamlessly from the state-of-the-art vector control method. The proposed control technique is verified in simulation, and the results are presented in this paper.}, journal={2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Das, Partha Pratim and Satpathy, Subhransu and Bhattacharya, Subhashish and Veliadis, Victor}, year={2022} }
 @article{yun_lynch_deboer_morgan_sung_xing_kang_agarwal_veliadis_amarasinghe_et al._2021, title={Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry}, DOI={10.1109/WiPDA49284.2021.9645146}, abstractNote={6.5 kV-rated 4H-SiC MOSFETs have been successfully fabricated and demonstrated on 60 μm-thick, 1.2×1015 cm-3 doped N-type epi-layer on 6-inch, 4H-SiC N+ substrates. Devices were fabricated at the 6-inch SiC foundry, X-FAB, TX, USA. Active and edge termination areas of high voltage (>3.3 kV) SiC devices require critical design consideration due to implant straggles from the low background doping concentration. Despite the fabrication and design challenges, we have demonstrated Ron,sp of 47 mΩ-cm2 with a breakdown voltage of 7.9 kV with a very low leakage current using ring-based edge termination structure. Devices were then diced and packaged in a SUNY Poly’s custom-made package to evaluate short circuit capabilities. Short circuit withstand time of 6.2 μs was recorded from the nominal device, along with 7 μs and 13 μs from the device with narrower JFET width and wider channel length, respectively.}, journal={2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)}, author={Yun, Nick and Lynch, Justin and DeBoer, Skylar and Morgan, Adam J. and Sung, Woongje and Xing, Diang and Kang, Minseok and Agarwal, Anant and Veliadis, Victor and Amarasinghe, Voshadhi and et al.}, year={2021}, pages={361–365} }
 @article{kolli_parashar_kokkonda_anurag_kumar_bhattacharya_veliadis_2021, title={Design Considerations of Three Phase Active Front End Converter for 13.8 kV Asynchronous Microgrid Power Conditioning System enabled by Series Connection of Gen-3 10 kV SiC MOSFETs}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE47101.2021.9594975}, abstractNote={The recent growth in power generation using renewable energy sources has led to extensive research and development of robust and resilient power converters, which can integrate them with the medium voltage (MV) grids (13.8 kV,60Hz). Conventional power converters need a line frequency transformer for their integration to the MV grid, which increases the overall footprint and installation cost of the system. Therefore, a compact and lightweight alternative are required for largescale integration of the renewable energy source to the MV grid. With the advent of high voltage SiC MOSFETs, the operating frequency of grid converter can be increased up to 10-20 kHz, thus significantly reducing the size of filter inductors. The use of these devices in multi-level configurations with series-connected devices facilitates the design of power converters that can interface directly with MV grid, eliminating the need for line frequency transformers. The converter presented in this paper is designed to interface a 13.8 kV three-phase grid to a dc link of 24 kV. A three-level neutral point clamped (3L-NPC) topology enabled by series-connected 10 kV 15 A SiC MOSFETs and 10 kV 15 A SiC JBS diodes is presented. This paper focuses on the advantages, design considerations, and challenges associated with a medium voltage 3L-NPC converter. Experimental results show the successful operation of series-connected 10 kV 15 A SiC MOSFETs and JBS Diodes at medium voltage levels and highlights the series connection that is realized with snubber circuits for voltage balancing.}, journal={2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Kolli, Nithin and Parashar, Sanket and Kokkonda, Raj Kumar and Anurag, Anup and Kumar, Ashish and Bhattacharya, Subhashish and Veliadis, Victor}, year={2021}, pages={1211–1218} }
 @article{kumar_kokkonda_bhattacharya_baliga_veliadis_2021, title={High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE47101.2021.9595821}, abstractNote={The short circuit characteristics of the recently developed high voltage (HV) SiC MOSFETs are essential to ensure the proper functioning of the power converters during the short circuit fault conditions. The short circuit failure time can be estimated using the HV output characteristics of the MOSFETs with reasonable assumptions. The HV output characteristics of the 3.3 kV, 6.5 kV, and 10 kV SiC MOSFETs, developed by Wolfspeed, are measured for the first time. The estimated short circuit failure time is 3.5 μs, 7.4 μs and 8.1 μs for the 3.3 kV, 6.5 kV, and 10 kV SiC MOSFETs, respectively at the gate bias of 15 V. The analytical results are closely matching with the experimental short circuit failure results of the 6.5 kV SiC MOSFET. The short circuit robustness of the single 6.5 kV SiC MOSFET is found to be superior to the two series-connected 3.3 kV SiC MOSFETs.}, journal={2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Kumar, Ashish and Kokkonda, Raj Kumar and Bhattacharya, Subhashish and Baliga, Jayant and Veliadis, Victor}, year={2021}, pages={5277–5282} }
 @article{das_satpathy_shah_bhattacharya_veliadis_2021, title={Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE47101.2021.9595766}, abstractNote={This paper presents design considerations and experimental verification of a GaN-based half-bridge 650V/160A power converter block with four parallel 650V/60AGaN High Electron Mobility Transistors (HEMTs) for high-power traction drive applications. Paralleling of semiconductor devices is common for high power density applications. However, paralleling more than two GaN devices is challenging as parasitic inductances and resistances need to be well matched for all the devices. In addition, the DC loop inductances must be minimized to reduce the device voltage overshoot during turn-off. The gate loop inductances must also be matched and minimized to improve current sharing and reduce gate voltage oscillations. A detailed design method of a half-bridge with four parallel devices is discussed in this paper for matching gate and DC loop inductances. A half-bridge test circuit with four parallel enhancement-mode GaN (e-GaN) HEMTs is designed following the design method. The inductance matchings are verified with a detailed Q3D simulation. Finally, Double Pulse Test (DPT) results at 400V/160A are presented in this paper to demonstrate the half-bridge converter block’s current sharing and loss distributions.}, journal={2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Das, Partha Pratim and Satpathy, Subhransu and Shah, Suyash Sushilkumar and Bhattacharya, Subhashish and Veliadis, Victor}, year={2021}, pages={5269–5276} }
 @article{kumar_bhattacharya_baliga_veliadis_2021, title={Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications}, ISSN={["1048-2334"]}, DOI={10.1109/APEC42165.2021.9487135}, abstractNote={Medium voltage direct-drive high-speed motor results in better efficiency and reduces the compressor system’s footprint in the oil and gas industry. This paper investigates the employment and the performance evaluation of the recently developed 3.3 kV SiC MOSFET power modules for a 2.3 kV three-phase high-speed motor drive application. Performance of the three popular three-level (3-L) converter topology, namely NPC, ANPC, and T-type, enabled by the 3.3 kV SiC MOSFETs and diodes is evaluated and compared with a 3.3 kV IGBT-based 2.3 kV drive system. At 10 kHz switching frequency, the test results show that the 3.3 kV SiC MOSFET-based 3-L NPC inverter has superior performance to the other 3-L converters at the motor frequency of 300 Hz. The 3.3 kV SiC MOSFET-based drive system is shown to have a significant improvement in reliability, power density, and efficiency in comparison to the 3.3 kV IGBT-based drive system. The 3.3 kV MOSFET module is demonstrated successfully using the heat run test in the 3-L inverter pole at 10 kHz switching frequency in the laboratory.}, journal={2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021)}, author={Kumar, Ashish and Bhattacharya, Subhashish and Baliga, Jayant and Veliadis, Victor}, year={2021}, pages={1103–1110} }
 @article{kumar_bhattacharya_baliga_veliadis_2021, title={Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications}, ISSN={["1048-2334"]}, DOI={10.1109/APEC42165.2021.9487162}, abstractNote={Series-connected 6.5 kV symmetric gate-commutated thyristor (SGCTs) are widely used as the reverse blocking switch (referred to as the current switch in this paper) in 4.16 kV PWM current source inverter (CSI) based motor drive applications up to 420 Hz switching frequency. Modern 10 kV SiC MOSFETs and SiC diodes have the potential to be implemented as the current switch with lower switching loss and a smaller count of the active switches in the 4.16 kV CSI-based drives. In this paper, a 10 kV SiC current switch is presented to enable a medium voltage (MV) PWM-CSI for 4.16 kV motor drive applications. The higher switching frequency capability of the 10 kV SiC current switch reduces the output current harmonics and the dc link inductor size significantly. Experimental tests have shown that the electrical and thermal performance of the 10 kV SiC current switch-based CSI is shown to be reasonably acceptable and near to 10 kV SiC MOSFET-based VSI drives at 10 kHz switching frequency.}, journal={2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021)}, author={Kumar, Ashish and Bhattacharya, Subhashish and Baliga, Jayant and Veliadis, Victor}, year={2021}, pages={1219–1226} }
 @article{veliadis_2019, title={The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics}, volume={6}, ISSN={["2329-9215"]}, DOI={10.1109/MPEL.2019.2910715}, abstractNote={Silicon (Si) power devices have dominated power electronics because of their low-cost volume production, excellent starting material quality, ease of processing, and proven reliability. Although Si power devices continue to make progress, they are approaching their operational limits, primarily because of their relatively low bandgap and critical electric field, which result in high conduction and switching losses and in poor high-temperature performance. Silicon carbide (SiC) and gallium nitride (GaN) devices are revolutionizing power electronics because of their favorable material properties, which allow for highly efficient power devices with a reduced form factor and reduced cooling requirements. Although wide-bandgap (WBG) power devices have now advanced well past the proof-of-concept stage and are commercially available in a variety of voltage and current ratings, their widespread commercialization has been slow, primarily due to their high cost relative to their Si counterparts and concerns about their reliability.}, number={2}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Veliadis, Victor}, year={2019}, month={Jun}, pages={62–66} }
 @article{veliadis_kim_2019, title={The South Korean Silicon-Carbide Semiconductor Industry: An Emerging Powerhouse}, volume={6}, ISSN={["2329-9215"]}, DOI={10.1109/MPEL.2019.2925576}, abstractNote={Reports on the emergence and growth of the South Korean silicon-carbide semiconductor industry.}, number={3}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Veliadis, Victor and Kim, Nam Kyun}, year={2019}, month={Sep}, pages={56–60} }
 @article{veliadis_2018, title={Accelerating Commercialization of Wide-Bandgap Power Electronics}, volume={5}, ISSN={["2329-9215"]}, DOI={10.1109/MPEL.2018.2875169}, abstractNote={Silicon (Si) power devices have dominated power electronics because of their low-cost volume production, excellent starting material quality, ease of processing, and proven reliability. Although Si power devices continue to make significant progress, they are approaching their operational limits, primarily because of their relatively low bandgap and critical electric field, which result in high conduction and switching losses and in poor high-temperature performance. Si carbide (SiC) and gallium nitride (GaN) power devices are revolutionizing power electronics because of their favorable material properties, which allow for highly efficient power devices with a reduced form factor and reduced cooling requirements.}, number={4}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Veliadis, Victor}, year={2018}, month={Dec}, pages={63–65} }
 @article{veliadis_kaplar_zhang_bakowski_khalil_moens_2018, title={IEEE ITRW Working Group Position Paper-Materials and Devices WBG and UWBG materials and devices are examined in a new working group}, volume={5}, ISSN={["2329-9215"]}, DOI={10.1109/mpel.2018.2823198}, abstractNote={The International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) materials and devices working group considers the materials science of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors in addition to device design, fabrication, and evaluation. Its purpose is to formulate a long-term, international roadmap for WBG and UWBG materials and devices consistent with the packaging and applications working groups of ITRW.}, number={2}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Veliadis, Victor and Kaplar, Robert and Zhang, Jon and Bakowski, Mietek and Khalil, Sameh and Moens, Peter}, year={2018}, month={Jun}, pages={45–48} }
 @article{wang_veliadis_zhang_alsmadi_wilson_scott_2018, title={IEEE ITRW Working Group Position Paper-System Integration and Application:Silicon Carbide}, volume={5}, ISSN={["2329-9215"]}, DOI={10.1109/mpel.2018.2822863}, abstractNote={A long-term vision of the power electronics community is to develop highly integrated power electronic converters that are specialized for their particular applications. The motivation for a migration from silicon (Si) to silicon carbide (SiC) power electronics is driven by the need for those power converters to have much greater power density, reliability, and overall system performance without costly devices or designs. The benefit of moving to SiC is that, for power electronics, it is inevitable that there will be a rapid transition from Si to SiC technology.}, number={2}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Wang, Jin and Veliadis, Victor and Zhang, Jon and Alsmadi, Yazan and Wilson, Peter R. and Scott, Mark J.}, year={2018}, month={Jun}, pages={40–44} }
 @inproceedings{bhattacharya_veliadis_veliadis_2017, title={SiC power device design and fabrication, and insertion in novel MV power converters}, booktitle={2017 ieee energy conversion congress and exposition (ecce)}, author={Bhattacharya, S. and Veliadis, V. and Veliadis, V.}, year={2017} }
 @inproceedings{bhattacharya_veliadis_veliadis_2017, title={SiC power device design and fabrication, and insertion in novel MV power converters}, booktitle={2017 ieee energy conversion congress and exposition (ecce)}, author={Bhattacharya, S. and Veliadis, V. and Veliadis, V.}, year={2017} }