2008 patent
Gallium nitride material transistors and methods associated with the same
Washington, DC: U.S. Patent and Trademark Office.
2007 journal article
Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate
Applied Physics Letters, 90(15).
2001 journal article
A pulsed jumping ring apparatus for demonstration of Lenz's law
AMERICAN JOURNAL OF PHYSICS, 69(8), 911–916.
1999 journal article
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).
1999 journal article
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).
1999 journal article
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).
1999 article
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.
1998 article
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.
1998 article
Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire
Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.
1997 article
Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.
Contributors: M. Johnson n, W. Hughes n, W. Rowland Jr., J. Cook Jr., J. Schetzina n, M. Leonard* , H. Kong*, J. Edmond*, J. Zavada*
1997 article
MBE growth and properties of GaN on GaN/SiC substrates
Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.
1997 article
Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters
Hughes, W. C., Boney, C., Johnson, M. A. L., Cook, J. W., & Schetzina, J. F. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 546–551.
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