James Cook

Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., … Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. (2007). Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate. Applied Physics Letters, 90(15).

Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., … Vescan, A. (2006). Gallium nitride material transistors and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Tanner, P., Loebach, J., Cook, J., & Hallen, H. D. (2001). A pulsed jumping ring apparatus for demonstration of Lenz's law. American Journal of Physics, 69(8), 911–916. https://doi.org/10.1119/1.1376377

Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999). A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). https://doi.org/10.1557/s1092578300003100

Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999). Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). https://doi.org/10.1557/s1092578300002878

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999). Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride. Journal of Electronic Materials, 28(3), 295–300. https://doi.org/10.1007/s11664-999-0030-1

Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Kong, H. S., & Edmond, J. A. (1998). Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282–1285. https://doi.org/10.1116/1.590000

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998). Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire. Journal of Crystal Growth, 195(1-4), 333–339. https://doi.org/10.1016/S0022-0248(98)00638-1

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997). Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy. Journal of Crystal Growth, 175, 72–78. https://doi.org/10.1016/S0022-0248(96)01019-6

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997). MBE Growth and properties of GaN on GaN/SiC substrates. Solid-State Electronics, 41(2), 213–218. https://doi.org/10.1016/S0038-1101(96)00169-4

Hughes, W. C., Boney, C., Johnson, M. A. L., Cook, J. W., & Schetzina, J. F. (1997). Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters. Journal of Crystal Growth, 175(1997 May), 546–551. https://doi.org/10.1016/S0022-0248(96)01022-6