2021 journal article
Hf1-xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 39(3).
Topological Quantum Matter to Topological Phase Conversion: Fundamentals, Materials, Physical Systems for Phase Conversions, and Device Applications
(2021, February 11).
Topological quantum matter to topological phase conversion: Fundamentals, materials, physical systems for phase conversions, and device applications
[Review of ]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 145, 100620.
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