Kaveh Ahadi

Spin-to-charge conversion at KTaO₃(111) interfaces

APPLIED PHYSICS LETTERS, 126(9).

Anisotropic superconductivity at KTaO3(111) interfaces

Anisotropic superconductivity at KTaO 3 (111) interfaces. Science Advances.

Enhanced Critical Field of Superconductivity at an Oxide Interface

Al-Tawhid, A. H. H., Poage, S. J. J., Salmani-Rezaie, S., Gonzalez, A., Chikara, S., Muller, D. A. A., … Ahadi, K. (2023, July 27). NANO LETTERS, Vol. 7.

Molecular beam epitaxy of KTaO3

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 41(2).

Complex High-kappa Oxides for Gate Dielectric Applications

Ahadi, K., & Cadien, K. (2022, June 22). JOURNAL OF ELECTRONIC MATERIALS, Vol. 6.

Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide

Al-Tawhid, A. H., Kanter, J., Hatefipour, M., Irving, D. L., Kumah, D. P., Shabani, J., & Ahadi, K. (2022, September 24). JOURNAL OF ELECTRONIC MATERIALS, Vol. 9.

Superconductivity and Weak Anti-localization at KTaO3 (111) Interfaces

Al-Tawhid, A. H., Kanter, J., Hatefipour, M., Kumah, D. P., Shabani, J., & Ahadi, K. (2022, August 19). JOURNAL OF ELECTRONIC MATERIALS, Vol. 8.

Hf1-xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 39(3).

Topological Quantum Matter to Topological Phase Conversion: Fundamentals, Materials, Physical Systems for Phase Conversions, and Device Applications

(2021, February 11).

Topological quantum matter to topological phase conversion: Fundamentals, materials, physical systems for phase conversions, and device applications

[Review of ]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 145.

Two-dimensional electron systems and interfacial coupling in LaCrO3/KTaO3 heterostructures

APPLIED PHYSICS LETTERS, 118(19).

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

Correlating magnetic structure and magnetotransport in semimetal thin films of Eu1−xSmxTiO3

Physical Review Materials.

High Current Density SmTiO3/SrTiO3 Field-Effect Transistors

ACS Applied Electronic Materials.

Magnetoelastic coupling to coherent acoustic phonon modes in the ferrimagnetic insulator GdTiO3

Physical Review B.

Order-Disorder Ferroelectric Transition of Strained SrTiO3

Physical Review Letters.

Polar Nanodomains in a Ferroelectric Superconductor

Nano Letters.

Possible signatures of mixed-parity superconductivity in doped polar SrTiO3 films

Physical Review B.

Probing the Polar Instability of Strained SrTiO3 with HAADF-STEM

Microscopy and Microanalysis.

Anisotropic magnetoresistance in the itinerant antiferromagnetic EuTiO3

Physical Review B.

Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface

Nature Communications.

Enhancing superconductivity in SrTiO3 films with strain

Science Advances.

Ferroelectric enhancement of superconductivity in compressively strained SrTiO3 films

Physical Review Materials.

Lattice relaxations around individual dopant atoms in SrTiO3

Physical Review Materials.

Probing the Local Lattice Distortions in Doped SrTiO3 Using Quantitative STEM

Microscopy and Microanalysis.

Carrier density control of magnetism and Berry phases in doped EuTiO3

APL Materials.

Electron nematic fluid in a strained Sr3Ru2O7 film

Physical Review B.

Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface

APL Materials.

Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3

Applied Physics Letters.

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Applied Physics Letters.

Freestanding hierarchical porous carbon film derived from hybrid nanocellulose for high-power supercapacitors

Nano Research.

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

APL Materials.

Novel Metal-Insulator Transition at the SmTiO3/SrTiO3 Interface

Physical Review Letters.

Response of the Lattice across the Filling-Controlled Mott Metal-Insulator Transition of a Rare Earth Titanate

Physical Review Letters.

Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition

Thin Solid Films.

Understanding the Effects of a High Surface Area Nanostructured Indium Tin Oxide Electrode on Organic Solar Cell Performance

ACS Applied Materials & Interfaces.

Strain-induced electrostatic enhancements of BiFeO3 nanowire loops

Physical Chemistry Chemical Physics.

Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films.

Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics

RSC Advances.

Effect of chemical substitution on the morphology and optical properties of Bi1−xCaxFeO3 films grown by pulsed-laser deposition

Journal of Materials Science: Materials in Electronics.

Effect of simultaneous chemical substitution of A and B sites on the electronic structure of BiFeO3 films grown on BaTiO3/SiO2/Si substrate

Journal of Materials Science: Materials in Electronics.

Conductor–insulator transition and electronic structure of Ca-doped BiFeO3 films

Materials Letters.

Electronic structure and morphological study of BaTiO3 film grown by pulsed-laser deposition

Materials Letters.

Synthesis of sodium tungsten oxide nano-thick plates

Materials Letters.

The effect of dynamic strain aging on room temperature mechanical properties of high martensite dual phase (HMDP) steel

Materials Science and Engineering: A.

Effect of Iron Oxide and Silica Doping on Microstructure, Bandgap and Photocatalytic Properties of Titania by Water-in-Oil Microemulsion Technique

Transactions of the Indian Ceramic Society.

Investigation of dark and light conductivities in calcium doped bismuth ferrite thin films

Materials Letters.

Photoconductivity and diode effect in Bi rich multiferroic BiFeO3 thin films grown by pulsed-laser deposition

Journal of Materials Science: Materials in Electronics.