@article{li_borysenko_nardelli_kim_2011, title={Electron transport properties of bilayer graphene}, volume={84}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.84.195453}, DOI={10.1103/physrevb.84.195453}, abstractNote={Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in bilayer than in monolayer graphene, with significantly reduced mobilities and saturation velocities, the calculation also reveals the dominant influence of extrinsic factors such as the substrate and impurities. Accordingly, the difference between two graphene forms are more muted in realistic settings although the velocity-field characteristics remain substantially lower in the bilayer. When bilayer graphene is subject to an interlayer bias, the resulting changes in the energy dispersion lead to stronger electron scattering at the bottom of the conduction band. The mobility decreases significantly with the size of the generated bandgap, whereas the saturation velocity remains largely unaffected.}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Li, X. and Borysenko, K. M. and Nardelli, M. Buongiorno and Kim, K. W.}, year={2011}, month={Nov} }
 @article{borysenko_mullen_li_semenov_zavada_nardelli_kim_2011, title={Electron-phonon interactions in bilayer graphene}, volume={83}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.83.161402}, DOI={10.1103/physrevb.83.161402}, abstractNote={K. M. Borysenko, J. T. Mullen, X. Li, Y. G. Semenov, J. M. Zavada, M. Buongiorno Nardelli, 3 and K. W. Kim Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911 Department of Physics, North Carolina State University, Raleigh, NC 27695-8202 CSMD, Oak Ridge National Laboratory, Oak Ridge, TN 37831 Abstract Using calculations from first principles, we demonstrate that intrinsic carrier-phonon scattering in bilayer graphene is dominated by low energy acoustic (and acoustic-like) phonon modes in a framework that bears more resemblance with bulk graphite than monolayer graphene. The total scattering rate at low/moderate electron energies can be described by a simple two-phonon model in the deformation potential approximation with effective constants Dac ≈ 15 eV and Dop ≈ 2.8 × 108 eV/cm for acoustic and optical phonons, respectively. With much enhanced acoustic phonon scattering, the low field mobility of intrinsic bilayer graphene is estimated to be significantly smaller than that of the monolayer: μ = 8.4× 104 cm2/V·s}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Borysenko, K. M. and Mullen, J. T. and Li, X. and Semenov, Y. G. and Zavada, J. M. and Nardelli, M. Buongiorno and Kim, K. W.}, year={2011}, month={Apr} }
 @article{borysenko_mullen_barry_paul_semenov_zavada_nardelli_kim_2010, title={First-principles analysis of electron-phonon interactions in graphene}, volume={81}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.81.121412}, DOI={10.1103/physrevb.81.121412}, abstractNote={The electron-phonon interaction in monolayer graphene is investigated using density-functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane phonon branches and must be considered simultaneously. Moreover, the calculated scattering rates suggest an acoustic-phonon contribution that is much weaker than previously thought, revealing an important role of optical phonons even at low energies. Accordingly it is predicted, in good agreement with a recent measurement, that the intrinsic mobility of graphene may be more than an order of magnitude larger than the already high values reported in suspended samples.}, number={12}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Borysenko, K. M. and Mullen, J. T. and Barry, E. A. and Paul, S. and Semenov, Y. G. and Zavada, J. M. and Nardelli, M. Buongiorno and Kim, K. W.}, year={2010}, month={Mar} }
 @article{borysenko_semenov_kim_zavada_2008, title={Electron spin relaxation via flexural phonon modes in semiconducting carbon nanotubes}, volume={77}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.77.205402}, DOI={10.1103/physrevb.77.205402}, abstractNote={This work considers the $g$-tensor anisotropy induced by the flexural thermal vibrations in one-dimensional structures and its role on electron spin relaxation. In particular, the mechanism of spin-lattice relaxation via flexural modes is theoretically studied for localized and delocalized electronic states in semiconducting carbon nanotubes in the presence of a magnetic field. The calculation of a one-phonon spin-flip process predicts distinctive dependencies of the relaxation rate on temperature, magnetic field, and nanotube diameter. A comparison to the spin relaxation caused by the hyperfine interaction clearly suggests the relative efficiency of the proposed mechanism at sufficiently high temperatures. Specifically, the longitudinal spin relaxation time in the semiconducting carbon nanotubes is estimated to be as short as $30\text{ }\ensuremath{\mu}\text{s}$ at room temperature.}, number={20}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Borysenko, K. M. and Semenov, Y. G. and Kim, K. W. and Zavada, J. M.}, year={2008}, month={May} }