@article{mukhopadhyay_lyle_pal_das_porter_sarkar_2022, title={Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit}, DOI={10.1063/5.0068211}, journal={JOURNAL OF APPLIED PHYSICS}, author={Mukhopadhyay, Swarnav and Lyle, Luke A. M. and Pal, Hridibrata and Das, Kalyan K. and Porter, Lisa M. and Sarkar, Biplab}, year={2022}, month={Jan} } @article{lyle_jiang_favela_das_popp_galazka_wagner_porter_2021, title={Effect of metal contacts on (100) beta-Ga2O3 Schottky barriers}, volume={39}, ISBN={1520-8559}, DOI={10.1116/6.0000877}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lyle, Luke A. M. and Jiang, Kunyao and Favela, Elizabeth V. and Das, Kalyan and Popp, Andreas and Galazka, Zbigniew and Wagner, Guenter and Porter, Lisa M.}, year={2021}, month={May} } @article{jadhav_lyle_xu_das_porter_sarkar_2021, title={Temperature dependence of barrier height inhomogeneity in beta-Ga2O3 Schottky barrier diodes}, DOI={10.1116/6.0001059}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Jadhav, Aakash and Lyle, Luke A. M. and Xu, Ziyi and Das, Kalyan K. and Porter, Lisa M. and Sarkar, Biplab}, year={2021}, month={Jul} } @article{lyle_jiang_das_porter_2019, series={Metal Oxides}, title={Schottky contacts to beta-Ga2O3}, ISBN={978-0-12-814522-7}, DOI={10.1016/B978-0-12-814521-0.00011-7}, journal={GALLIUM OXIDE: TECHNOLOGY, DEVICES AND APPLICATIONS}, author={Lyle, Luke A. M. and Jiang, Lai and Das, Kalyan K. and Porter, Lisa M.}, year={2019}, pages={231–261}, collection={Metal Oxides} } @article{korivi_nujhat_ahmed_jiang_das_2018, title={Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering}, volume={54}, DOI={10.1049/el.2018.1291}, number={17}, journal={ELECTRONICS LETTERS}, author={Korivi, N. and Nujhat, N. and Ahmed, S. and Jiang, L. and Das, K.}, year={2018}, pages={1043-} }