Kalyan Das

Mukhopadhyay, S., Lyle, L. A. M., Pal, H., Das, K. K., Porter, L. M., & Sarkar, B. (2022). Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit. JOURNAL OF APPLIED PHYSICS. https://doi.org/10.1063/5.0068211

Lyle, L. A. M., Jiang, K., Favela, E. V., Das, K., Popp, A., Galazka, Z., … Porter, L. M. (2021). Effect of metal contacts on (100) beta-Ga2O3 Schottky barriers. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 39(3). https://doi.org/10.1116/6.0000877

Jadhav, A., Lyle, L. A. M., Xu, Z., Das, K. K., Porter, L. M., & Sarkar, B. (2021). Temperature dependence of barrier height inhomogeneity in beta-Ga2O3 Schottky barrier diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. https://doi.org/10.1116/6.0001059

Lyle, L. A. M., Jiang, L., Das, K. K., & Porter, L. M. (2019). Schottky contacts to beta-Ga2O3. GALLIUM OXIDE: TECHNOLOGY, DEVICES AND APPLICATIONS, pp. 231–261. https://doi.org/10.1016/B978-0-12-814521-0.00011-7

Korivi, N., Nujhat, N., Ahmed, S., Jiang, L., & Das, K. (2018). Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering. ELECTRONICS LETTERS, 54(17), 1043-. https://doi.org/10.1049/el.2018.1291