Kijeong Han

Bhattacharya, S., Narwal, R., Shah, S. S., Baliga, B. J., Agarwal, A., Kanale, A., … Cheng, T.-H. (2023). Power Conversion Systems Enabled by SiC BiDFET Device. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43. https://doi.org/10.1109/MPEL.2023.3237060

Baliga, B. J., Hopkins, D., Bhattacharya, S., Agarwal, A., Cheng, T.-H., Narwal, R., … Han, K. (2023). The BiDFET Device and Its Impact on Converters. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27. https://doi.org/10.1109/MPEL.2023.3237059

Agarwal, A., Han, K., & Baliga, B. J. (2021). 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400. https://doi.org/10.1109/TED.2021.3067921

Agarwal, A., Han, K., & Baliga, B. J. (2021). Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88. https://doi.org/10.1109/JEDS.2020.3040353

Kanale, A., Cheng, T.-H., Shah, S. S., Han, K., Agarwal, A., Baliga, B. J., … Bhattacharya, S. (2021). Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274. https://doi.org/10.1109/APEC42165.2021.9487410

Han, K., & Baliga, B. J. (2020). 1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor. IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440. https://doi.org/10.1109/LED.2020.2964773

Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504. https://doi.org/10.1109/JEDS.2020.2991355

Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360272

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195. https://doi.org/10.1109/LED.2019.2956966

Agarwal, A., Han, K., & Baliga, B. J. (2020). Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678. https://doi.org/10.1109/TED.2020.3005632

Agarwal, A., Han, K., & Baliga, B. J. (2019). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V. IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795. https://doi.org/10.1109/LED.2019.2942259

Han, K., & Baliga, B. J. (2019). Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET. IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166. https://doi.org/10.1109/LED.2019.2917637

Han, K., & Baliga, B. J. (2019). Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326. https://doi.org/10.1109/TED.2019.2905736

Han, K., & Baliga, B. J. (2019). Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928. https://doi.org/10.1109/TED.2019.2929733

Agarwal, A., Han, K., & Baliga, B. J. (2019). Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs. IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776. https://doi.org/10.1109/LED.2019.2908078

Han, K., & Baliga, B. J. (2019). The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit. IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302. https://doi.org/10.1109/LED.2018.2889221

Han, K., Baliga, B. J., & Sung, W. (2018). A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results. IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251. https://doi.org/10.1109/led.2017.2785771

Raheja, U., Gohil, G., Han, K., Acharya, S., Baliga, B. J., Battacharya, S., … Lal, R. (2017). Applications and characterization of four quadrant GaN switch. 2017 ieee energy conversion congress and exposition (ecce), 2017-January, 1967–1974. https://doi.org/10.1109/ecce.2017.8096397

Han, K., Baliga, B. J., & Sung, W. (2017). Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation. IEEE Electron Device Letters, 38(10), 1437–1440. https://doi.org/10.1109/led.2017.2738616

Sung, W. J., Han, K. J., & Baliga, B. J. Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM). 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.