@article{miryala_dhanasekaran_ganesan_hatua_bhattacharya_2022, title={Active Gate Driving Technique for Series Connecting SiC MOSFETs in the Presence of Gate Pulse Delay Mismatch}, volume={69}, ISSN={["1557-9948"]}, url={https://doi.org/10.1109/TIE.2021.3128907}, DOI={10.1109/TIE.2021.3128907}, abstractNote={In this article, series connection of SiC MOSFETs has been attempted with the help of an active gate driving (AGD) technique. The gate currents of SiC MOSFETs are actively controlled in such a way that several devices can switch fast (within 50 ns) even in the presence of a moderate amount of gate pulse delay mismatch and jitter in the gate pulse. This enables the AGD’s to share the gate pulse signal information among each other. Such a feature can reduce the cost of the net solution by reducing the number of optical cables required for the gate pulse transmission. In addition to this, the AGD is designed in such a way that fast switching can be achieved even in the presence of moderate parasitic inductance in the layout. The proposed AGD technique is experimentally verified in a double pulse test setup with two and four switching devices in series using 32 A, 1 kV CREE SiC MOSFETs. The experimental results show turn-on and turn-off switching times of 45 and 34 ns, respectively, at 35 A load current. The AGD has also shown 47% reduction in the turn-off switching losses compared to the passive gate driving technique.}, number={12}, journal={IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Miryala, Vamshi Krishna and Dhanasekaran, Saravanan and Ganesan, P. and Hatua, Kamalesh and Bhattacharya, Subhashish}, year={2022}, month={Dec}, pages={12402–12413} }
 @inproceedings{kadavelugu_mainali_patel_madhusoodhanan_tripathi_hatua_bhattacharya_ryu_grider_leslie_2015, title={Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs}, volume={2015-May}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84937857287&partnerID=MN8TOARS}, DOI={10.1109/apec.2015.7104530}, abstractNote={This paper summarizes the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs. The 11 kV switching characterization results, 11 kV high dv/dt gate driver validation, and the heat-run test results of the SiC IGBT at 10 kV, 550 W/cm2 (active area) have been recently reported as individual topics. In this paper, it is attempted to link all these individual topics and present them as a complete subject from the double pulse tests to the converter design, for evaluating these novel high voltage power semiconductor devices. In addition, the demonstration results of two-level H-Bridge and three-level NPC converters, both at 10 kV dc input, are being presented for the first-time. Lastly, the performance of two-chip IGBT modules for increased current capability and demonstration of three-level poles, built using these modules, at 10 kV dc input with sine-PWM and square-PWM modulation for rectifier and dc-dc stages of a three-phase solid state transformer are presented.}, number={May}, booktitle={Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, author={Kadavelugu, A. and Mainali, K. and Patel, D. and Madhusoodhanan, S. and Tripathi, A. and Hatua, K. and Bhattacharya, Subhashish and Ryu, S.-H. and Grider, D. and Leslie, S.}, year={2015}, pages={1396–1403} }
 @inproceedings{madhusoodhanan_bhattacharya_hatua_2013, title={Control technique for 15 kV SiC IGBT based active front end converter of a 13.8 kV grid tied 100 kVA transformerless intelligent power substation}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84891067107&partnerID=MN8TOARS}, DOI={10.1109/ecce.2013.6647331}, abstractNote={This paper discusses the control technique adopted for a 3-Level Neutral Point Clamped (3L-NPC) converter, which is the rectifier stage of a 100 kVA solid state transformer known as the Transformerless Intelligent Power Substation (TIPS) interfacing with 13.8 kV grid. Due to high voltage (13.8 kV) and low power (100 kVA) specification for the rectifier, the control technique needs to be specially designed to control very low magnitude of line current (4.184 A r.m.s). Due to dead time in the converter and harmonic voltage present in the grid, the rectifier current is rich in lower order harmonics (6m±1). Moreover due to very high grid voltage, limiting starting inrush current within the converter current rating is a serious issue. A unified control technique is discussed to mitigate the above mentioned problems. Also the proposed control technique addresses the grid voltage unbalance and d.c bus mid-point voltage unbalance issue faced by the rectifier stage of TIPS. Simulation and SiC IGBT prototype experimental results verify the proposed techniques.}, booktitle={2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013}, author={Madhusoodhanan, S. and Bhattacharya, Subhashish and Hatua, K.}, year={2013}, pages={4697–4704} }
 @inproceedings{tripathi_hatua_mirzaee_bhattacharya_2012, title={A three-phase three winding topology for dual active bridge and its D-Q mode control}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84860132779&partnerID=MN8TOARS}, DOI={10.1109/apec.2012.6165998}, abstractNote={A new Dual Active Bridge (DAB) topology is proposed with a 15-kV SiC-IGBT based three-level inverter at the high-voltage side and 1200-V SiC-MOSFET based paralleled two-level inverter at the low-voltage side. The proposed DAB is an integral part of a solid state transformer which connects a 13.8-kV distribution grid and a 480-V utility grid. The three-level inverter connected at the high-voltage side and a pair of two-level inverters connected at the low-voltage sides (in Y/Δ) of the high frequency link transformer help to reduce dominant harmonic currents. Thus harmonic-free currents in the high frequency link transformer are achieved without pulse-width modulation. A simple control is proposed and validated with simulation results.}, booktitle={Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, author={Tripathi, A.K. and Hatua, K. and Mirzaee, H. and Bhattacharya, Subhashish}, year={2012}, pages={1368–1372} }
 @article{hatua_jain_banerjee_ranganathan_2012, title={Active damping of output LC filter resonance for vector-controlled VSI-fed AC motor drives}, volume={59}, number={1}, journal={IEEE Transactions on Industrial Electronics}, author={Hatua, K. and Jain, A. K. and Banerjee, D. and Ranganathan, V. T.}, year={2012}, pages={334–342} }
 @inproceedings{parks_dutta_ramachandram_hatua_bhattacharya_2012, title={Black start control of a solid state transformer for emergency power restoration}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84870862926&partnerID=MN8TOARS}, DOI={10.1109/ecce.2012.6342824}, abstractNote={This paper demonstrates the black start capabilities of a single phase 20kVA solid state transformer (SST), specifically for microgrid power restoration during islanding. SST's have many benefits including better management of renewable energy resources and more intelligent control than the classical transformer which acts only as a passive device. An additional benefit of the SST that is demonstrated in this paper is the ability to use these renewable energy resources directly connected to the SST to restore microgrid load power during an islanding event. During the black start procedure the SST can switch the control operation of its three cascaded power converter stages, AC/DC rectifier, Dual Active Bridge, and DC/AC inverter, in order to restore the microgrid load. The benefits of using the SST for black start restoration are also discussed and compared with other traditional methods.}, booktitle={2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012}, author={Parks, N. and Dutta, S. and Ramachandram, V. and Hatua, K. and Bhattacharya, Subhashish}, year={2012}, pages={188–195} }
 @inproceedings{madhusoodhanan_hatua_bhattacharya_leslie_ryu_das_agarwal_grider_2012, title={Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84870947926&partnerID=MN8TOARS}, DOI={10.1109/ecce.2012.6342807}, abstractNote={Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.}, booktitle={2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012}, author={Madhusoodhanan, S. and Hatua, K. and Bhattacharya, Subhashish and Leslie, S. and Ryu, S.-H. and Das, M. and Agarwal, A. and Grider, D.}, year={2012}, pages={310–317} }
 @inproceedings{hatua_dutta_tripathi_baek_karimi_bhattacharya_2011, title={Transformer less intelligent power substation design with 15kV SiC IGBT for grid interconnection}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-81855226026&partnerID=MN8TOARS}, DOI={10.1109/ecce.2011.6064346}, abstractNote={Basic power topology for a Solid State Transformer (SST) with new 15kV SiC IGBT devices is discussed. It is difficult to build high efficient, light weight, magnetically isolated solid state transformer for high voltage (13.8 kV) grid connectivity with existing Si 6.5kV rated IGBTs and diodes. Existing state of the art high voltage (6.5kV), high speed power devices (IGBT) cause considerable amount of loss (switching and conduction loss). With the advent of SiC devices these limitations are largely mitigated and this provides the motivation for new power topologies. The targeted efficiency of the proposed SST is 98%.Simulation results for a 1 MVA proposed SST topology is presented.}, booktitle={IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings}, author={Hatua, K. and Dutta, S. and Tripathi, A. and Baek, S. and Karimi, G. and Bhattacharya, Subhashish}, year={2011}, pages={4225–4232} }