@article{altaqui_schrickx_sen_li_rech_lee_balar_you_kim_escuti_et al._2021, title={Bio-inspired spectropolarimetric sensor based on tandem organic photodetectors and multi-twist liquid crystals}, DOI={10.1364/OE.431858}, journal={OPTICS EXPRESS}, author={Altaqui, Ali and Schrickx, Harry and Sen, Pratik and Li, Lingshan and Rech, Jeromy and Lee, Jin-Woo and Balar, Nrup and You, Wei and Kim, Bumjoon J. and Escuti, Michael and et al.}, year={2021}, month={Dec} }
 @article{altaqui_sen_schrickx_rech_lee_escuti_you_kim_kolbas_brendan t. o'connor_et al._2021, title={Mantis shrimp-inspired organic photodetector for simultaneous hyperspectral and polarimetric imaging}, volume={7}, ISBN={2375-2548}, DOI={10.1126/sciadv.abe3196}, number={10}, journal={SCIENCE ADVANCES}, author={Altaqui, Ali and Sen, Pratik and Schrickx, Harry and Rech, Jeromy and Lee, Jin-Woo and Escuti, Michael and You, Wei and Kim, Bumjoon J. and Kolbas, Robert and Brendan T. O'Connor and et al.}, year={2021}, month={Mar} }
 @article{altaqui_kolbas_escuti_brendan t. o'connor_kudenov_2021, title={Organic-based photodetectors for multiband spectral imaging}, volume={60}, ISBN={2155-3165}, DOI={10.1364/AO.417069}, number={8}, journal={APPLIED OPTICS}, author={Altaqui, Ali and Kolbas, Robert M. and Escuti, Michael J. and Brendan T. O'Connor and Kudenov, Michael W.}, year={2021}, pages={2314–2323} }
 @article{mishra_mattingly_kolbas_2019, title={Application of deconvolution to recover frequency-domain multiplexed detector pulses}, volume={929}, ISBN={1872-9576}, DOI={10.1016/j.nima.2019.03.043}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT}, author={Mishra, M. and Mattingly, J. and Kolbas, R. M.}, year={2019}, pages={57–65} }
 @article{mishra_mattingly_mueller_kolbas_2018, title={Frequency domain multiplexing of pulse mode radiation detectors}, volume={902}, DOI={10.1016/j.nima.2018.06.023}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT}, author={Mishra, M. and Mattingly, J. and Mueller, J. M. and Kolbas, R. M.}, year={2018}, pages={117–122} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2008, title={Stimulated emission and lasing from an Al0.13Ga0.87N∕GaN double heterostructure grown on a silicon substrate}, volume={92}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.2819614}, DOI={10.1063/1.2819614}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W., Jr. and Piner, E. L. and Linthicum, K. J.}, year={2008}, month={Jan}, pages={021118} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2007, title={Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate}, volume={90}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.2722201}, DOI={10.1063/1.2722201}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W., Jr. and Piner, E. L. and Linthicum, K. J.}, year={2007}, month={Apr}, pages={151116} }
 @article{chang_kolbas_reitmeier_davis_2006, title={Effect of thermal annealing on the metastable optical properties of GaN thin films}, volume={24}, DOI={10.1116/1.2209656}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Chang, Y. C. and Kolbas, R. M. and Reitmeier, Z. J. and Davis, R. F.}, year={2006}, pages={1051–1054} }
 @article{chang_cai_muth_kolbas_park_cuomo_hanser_bumgarner_2003, title={Optical and structural studies of hydride vapor phase epitaxy grown GaN}, volume={21}, DOI={10.1116/1.1568346}, number={3}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Chang, Y. C. and Cai, A. L. and Muth, J. F. and Kolbas, R. M. and Park, M. and Cuomo, J. J. and Hanser, A. and Bumgarner, J.}, year={2003}, pages={701–705} }
 @article{chang_cai_johnson_muth_kolbas_reitmeier_einfeldt_davis_2002, title={Electron-beam-induced optical memory effects in GaN}, volume={80}, DOI={10.1063/1.1469222}, number={15}, journal={Applied Physics Letters}, author={Chang, Y. C. and Cai, A. L. and Johnson, M. A. L. and Muth, J. F. and Kolbas, R. M. and Reitmeier, Z. J. and Einfeldt, S. and Davis, R. F.}, year={2002}, pages={2675–2677} }
 @article{kou_hall_strohhofer_polman_zhang_kolbas_heller_dupuis_2002, title={Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization}, volume={8}, DOI={10.1109/JSTQE.2002.801689}, number={4}, journal={IEEE Journal of Selected Topics in Quantum Electronics}, author={Kou, L. G. and Hall, D. C. and Strohhofer, C. and Polman, A. and Zhang, T. and Kolbas, R. M. and Heller, R. D. and Dupuis, R. D.}, year={2002}, pages={880–890} }
 @article{park_maria_cuomo_chang_muth_kolbas_nemanich_carlson_bumgarner_2002, title={X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy}, volume={81}, DOI={10.1063/1.1506781}, number={10}, journal={Applied Physics Letters}, author={Park, M. and Maria, J. P. and Cuomo, J. J. and Chang, Y. C. and Muth, J. F. and Kolbas, R. M. and Nemanich, R. J. and Carlson, E. and Bumgarner, J.}, year={2002}, pages={1797–1799} }
 @article{park_teng_sakhrani_mclaurin_kolbas_sanwald_nemanich_hren_cuomo_2001, title={Optical characterization of wide band gap amorphous semiconductors (a-Si: C: H): Effect of hydrogen dilution}, volume={89}, DOI={10.1063/1.1332421}, number={2}, journal={Journal of Applied Physics}, author={Park, M. and Teng, C. W. and Sakhrani, V. and Mclaurin, M. B. and Kolbas, R. M. and Sanwald, R. C. and Nemanich, R. J. and Hren, J. J. and Cuomo, J. J.}, year={2001}, pages={1130–1137} }
 @article{chang_oberhofer_muth_kolbas_davis_2001, title={Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN}, volume={79}, DOI={10.1063/1.1381417}, number={3}, journal={Applied Physics Letters}, author={Chang, Y. C. and Oberhofer, A. E. and Muth, J. F. and Kolbas, R. M. and Davis, R. F.}, year={2001}, pages={281–283} }
 @article{teng_aboelfotoh_davis_muth_kolbas_2001, title={Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers}, volume={78}, DOI={10.1063/1.1353836}, number={12}, journal={Applied Physics Letters}, author={Teng, C. W. and Aboelfotoh, M. O. and Davis, R. F. and Muth, J. F. and Kolbas, R. M.}, year={2001}, pages={1688–1690} }
 @article{balkas_sitar_bergman_shmagin_muth_kolbas_nemanich_davis_2000, title={Growth and characterization of GaN single crystals}, volume={208}, DOI={10.1016/S0022-0248(99)00445-5}, number={1-4}, journal={Journal of Crystal Growth}, author={Balkas, C. M. and Sitar, Z. and Bergman, L. and Shmagin, I. K. and Muth, J. F. and Kolbas, R. and Nemanich, R. J. and Davis, R. F.}, year={2000}, pages={100–106} }
 @article{teng_muth_kolbas_hassan_sharma_kvit_narayan_2000, title={Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix}, volume={76}, DOI={10.1063/1.125650}, number={1}, journal={Applied Physics Letters}, author={Teng, C. W. and Muth, J. F. and Kolbas, R. M. and Hassan, K. M. and Sharma, A. K. and Kvit, A. and Narayan, J.}, year={2000}, pages={43–45} }
 @inproceedings{teng_muth_kolbas_hassan_sharma_narayan_2000, title={Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix}, booktitle={Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Teng, C. W. and Muth, J. F. and Kolbas, R. M. and Hassan, K. M. and Sharma, A. K. and Narayan, J.}, editor={J. Piqueras, T. Sekiguchi and Unlu, M. S.Editors}, year={2000} }
 @inproceedings{hassan_sharma_narayan_muth_teng_kolbas_2000, title={Size effect in germanium nanostructures fabricated by pulsed laser deposition}, booktitle={Nanophase and Nanocomposite Materials III  (Materials Research Society proceedings; vol. 581)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Hassan, K. M. and Sharma, A. K. and Narayan, J. and Muth, J. F. and Teng, C. W. and Kolbas, R. M.}, editor={H. Hahn, S. Komarneni and Parker, J. C.Editors}, year={2000} }
 @inproceedings{sharma_jin_narayan_teng_muth_kolbas_holland_2000, title={Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire}, number={2000}, booktitle={MRS Internet Journal of Nitride Semiconductor Research}, author={Sharma, A. K. and Jin, C. and Narayan, J. and Teng, C. W. and Muth, J. F. and Kolbas, R. M. and Holland, O. W.}, year={2000} }
 @article{muth_brown_johnson_yu_kolbas_cook_schetzina_1999, title={Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys}, volume={4S1}, number={G5.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Muth, J. F. and Brown, J. D. and Johnson, M. A. L. and Yu, Z. H. and Kolbas, R. M. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{joshkin_parker_bedair_muth_shmagin_kolbas_piner_molnar_1999, title={Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy}, volume={86}, DOI={10.1063/1.370727}, number={1}, journal={Journal of Applied Physics}, author={Joshkin, V. A. and Parker, C. A. and Bedair, S. M. and Muth, J. F. and Shmagin, I. K. and Kolbas, R. M. and Piner, E. L. and Molnar, R. J.}, year={1999}, pages={281–288} }
 @article{muth_kolbas_sharma_oktyabrsky_narayan_1999, title={Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition}, volume={85}, DOI={10.1063/1.370601}, number={11}, journal={Journal of Applied Physics}, author={Muth, J. F. and Kolbas, R. M. and Sharma, A. K. and Oktyabrsky, S. and Narayan, J.}, year={1999}, pages={7884–7887} }
 @article{bergmann_ozgur_casey_muth_chang_kolbas_rao_eom_schurman_1999, title={Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer}, volume={74}, DOI={10.1063/1.124102}, number={21}, journal={Applied Physics Letters}, author={Bergmann, M. J. and Ozgur, U. and Casey, H. C. and Muth, J. F. and Chang, Y. C. and Kolbas, R. M. and Rao, R. A. and Eom, C. B. and Schurman, M.}, year={1999}, pages={3188–3190} }
 @article{sharma_narayan_muth_teng_jin_kvit_kolbas_holland_1999, title={Optical and structural properties of epitaxial MgxZn1-xO alloys}, volume={75}, DOI={10.1063/1.125340}, number={21}, journal={Applied Physics Letters}, author={Sharma, A. K. and Narayan, J. and Muth, J. F. and Teng, C. W. and Jin, C. and Kvit, A. and Kolbas, R. M. and Holland, O. W.}, year={1999}, pages={3327–3329} }
 @article{hassan_sharma_narayan_muth_teng_kolbas_1999, title={Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition}, volume={75}, DOI={10.1063/1.124648}, number={9}, journal={Applied Physics Letters}, author={Hassan, K. M. and Sharma, A. K. and Narayan, J. and Muth, J. F. and Teng, C. W. and Kolbas, R. M.}, year={1999}, pages={1222–1224} }
 @misc{shmagin_muth_kolbas_1999, title={Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials}, volume={5,875,052}, number={1999 Feb. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Shmagin, I. K. and Muth, J. F. and Kolbas, R. M.}, year={1999} }
 @inproceedings{teng_muth_kolbas_hassan_sharma_kvit_narayan_1999, title={Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix}, booktitle={Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Teng, C. W. and Muth, J. F. and Kolbas, R. M. and Hassan, K. M. and Sharma, A. K. and Kvit, A. and Narayan, J.}, editor={J. Piqueras, T. Sekiguchi and Unlu, M. S.Editors}, year={1999} }
 @inproceedings{hassan_sharma_narayan_muth_teng_kolbas_1998, title={Germanium nanostructures fabricated by pulsed laser deposition}, booktitle={Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.}, author={Hassan, K. M. and Sharma, A. K. and Narayan, J. and Muth, J. F. and Teng, C. W. and Kolbas, R. M.}, year={1998} }
 @inproceedings{sharma_dovidenko_oktyabrsky_moxey_muth_kolbas_narayan_1998, title={Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation}, booktitle={Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A.  (Materials Research Society symposia proceedings ; v. 526).}, publisher={Warrendale, Pa.: Materials Research Society}, author={Sharma, A. K. and Dovidenko, K. and Oktyabrsky, S. and Moxey, D. E. and Muth, J. F. and Kolbas, R. M. and Narayan, J.}, year={1998}, pages={305} }
 @inproceedings{wei_sharma_narayan_ravindra_oktyabrsky_sankar_muth_kolbas_narayan_1998, title={Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition}, booktitle={Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A.  (Materials Research Society symposia proceedings ; v. 526).}, publisher={Warrendale, Pa.: Materials Research Society}, author={Wei, Q. and Sharma, A. K. and Narayan, R. J. and Ravindra, N. M. and Oktyabrsky, S. and Sankar, J. and Muth, J. F. and Kolbas, R. M. and Narayan, J.}, year={1998}, pages={331} }
 @inproceedings{dupuis_grudowski_eiting_shmagin_kolbas_rosner_1998, title={Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition}, booktitle={Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997}, publisher={Bristol; Philadelphia: Institute of Physics Pub.}, author={Dupuis, R. D. and Grudowski, P. A. and Eiting, C. J. and Shmagin, I. K. and Kolbas, R. M. and Rosner, S. J.}, year={1998}, pages={231–234} }
 @inproceedings{shmagin_muth_kolbas_dupuis_grudowski_eiting_park_shelton_lambert_1998, title={Optical metastability in InGaN/GaN heterostructures}, booktitle={Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997}, publisher={Bristol; Philadelphia: Institute of Physics Pub.}, author={Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Dupuis, R. D. and Grudowski, P. A. and Eiting, C. J. and Park, J. and Shelton, B. S. and Lambert, D. J. H.}, year={1998}, pages={375–378} }
 @inproceedings{kolbas_shmagin_muth_1998, title={Optical properties of wide bandgap II-V nitride semiconductors}, booktitle={1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China}, author={Kolbas, R. M. and Shmagin, I. K. and Muth, J. F.}, editor={M. Zhang and Tu, K. N.Editors}, year={1998}, pages={609–612} }
 @article{osinsky_gangopadhyay_yang_gaska_kuksenkov_temkin_shmagin_chang_muth_kolbas_1998, title={Visible-blind GaN Schottky barrier detectors grown on Si(111)}, volume={72}, DOI={10.1063/1.120755}, number={5}, journal={Applied Physics Letters}, author={Osinsky, A. and Gangopadhyay, S. and Yang, J. W. and Gaska, R. and Kuksenkov, D. and Temkin, H. and Shmagin, I. K. and Chang, Y. C. and Muth, J. F. and Kolbas, R. M.}, year={1998}, pages={551–553} }
 @article{muth_lee_shmagin_kolbas_casey_keller_mishra_denbaars_1997, title={Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements}, volume={71}, DOI={10.1063/1.120191}, number={18}, journal={Applied Physics Letters}, author={Muth, J. F. and Lee, J. H. and Shmagin, Irina Konstantinova and Kolbas, Robert M. and Casey, H. C. and Keller, B. P. and Mishra, U. K. and Denbaars, S. P}, year={1997}, pages={2572–2574} }
 @article{keller_keller_kapolnek_mishra_denbaars_shmagin_kolbas_krishnankutty_1997, title={Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition}, volume={170}, DOI={10.1016/S0022-0248(96)00553-2}, number={1-4}, journal={Journal of Crystal Growth}, author={Keller, S. and Keller, B. P. and Kapolnek, D. and Mishra, U. K. and Denbaars, S. P. and Shmagin, I. K. and Kolbas, R. M. and Krishnankutty, S.}, year={1997}, pages={349–352} }
 @article{zavada_abernathy_pearton_mackenzie_mileham_wilson_schwartz_crawford_shul_kilcoyne_et al._1997, title={Microdisk laser structures formed in III-V nitride epilayers}, volume={41}, DOI={10.1016/S0038-1101(96)00244-4}, number={2}, journal={Solid-state Electronics}, author={Zavada, J. M. and Abernathy, C. R. and Pearton, S. J. and MacKenzie, J. D. and Mileham, J. R. and Wilson, R. G. and Schwartz, R. N. and Crawford, M. and Shul, R. J. and Kilcoyne, S. P. and et al.}, year={1997}, pages={353–357} }
 @article{shmagin_muth_kolbas_krishnankutty_keller_mishra_denbaars_1997, title={Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration}, volume={81}, DOI={10.1063/1.364058}, number={4}, journal={Journal of Applied Physics}, author={Shmagin, I. K. and Muth, J F. and Kolbas, R. M. and Krishnankutty, S. and Keller, S. and Mishra, U. K. and DenBaars, S. P}, year={1997}, pages={2021–2023} }
 @article{shmagin_muth_kolbas_dupuis_grudowski_eiting_park_shelton_lambert_1997, title={Optical data storage in InGaN/GaN heterostructures}, volume={71}, DOI={10.1063/1.119900}, number={10}, journal={Applied Physics Letters}, author={Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Dupuis, R. D. and Grudowski, P. A. and Eiting, C. J. and Park, J. and Shelton, B. S. and Lambert, D. J. H.}, year={1997}, pages={1382–1384} }
 @article{shmagin_muth_lee_kolbas_balkas_sitar_davis_1997, title={Optical metastability in bulk GaN single crystals}, volume={71}, DOI={10.1063/1.119577}, number={4}, journal={Applied Physics Letters}, author={Shmagin, I. K. and Muth, J. F. and Lee, J. H. and Kolbas, R. M. and Balkas, C. M. and Sitar, Z. and Davis, R. F.}, year={1997}, pages={455–457} }
 @article{shmagin_muth_kolbas_krishnankutty_keller_abare_coldren_mishra_denbaars_1997, title={Photoluminescence characteristics of GaN/InGaN/GaN quantum wells}, volume={26}, DOI={10.1007/s11664-997-0172-y}, number={3}, journal={Journal of Electronic Materials}, author={Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Krishnankutty, S. and Keller, S. and Abare, A. C. and Coldren, L. A. and Mishra, U. K. and DenBaars, S. P.}, year={1997}, pages={325–329} }
 @article{shen_shmagin_koch_kolbas_fahmy_bergman_nemanich_mcclure_sitar_quan_1997, title={Photoluminescence from mechanically milled Si and SiO(2) powders}, volume={55}, DOI={10.1103/physrevb.55.7615}, number={12}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Shen, T. D. and Shmagin, I. K. and Koch, C. C. and Kolbas, R. M. and Fahmy, Y. and Bergman, L. and Nemanich, R. J. and McClure, M. T. and Sitar, Z. and Quan, M. X}, year={1997}, pages={7615–7623} }
 @article{shmagin_muth_kolbas_mack_abare_keller_coldren_mishra_denbaars_1997, title={Reconfigurable optical properties in InGaN/GaN quantum wells}, volume={71}, DOI={10.1063/1.119935}, number={11}, journal={Applied Physics Letters}, author={Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Mack, M. P. and Abare, A. C. and Keller, S. and Coldren, L. A. and Mishra, U. K. and DenBaars, S. P.}, year={1997}, pages={1455–1457} }
 @inproceedings{balkas_sitar_zheleva_bergman_shmagin_muth_kolbas_nemanich_davis_1996, title={Growth of bulk AIN and GaN single crystals by sublimation}, booktitle={III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Balkas, C. M. and Sitar, Z. and Zheleva, T. and Bergman, L. and Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Nemanich, R. and Davis, R. F.}, year={1996}, pages={41–46} }
 @inbook{kolbas_1996, title={Quantum well heterostructure lasers}, booktitle={Properties of gallium arsenide (3rd ed.) (Datareviews series, no. 16)}, publisher={INSPEC}, author={Kolbas, R. M.}, editor={M. R. Brozel and Stillman, G. E.Editors}, year={1996}, pages={887–905} }
 @inbook{shmagin_muth_kolbas_krishnankkutty_keller_mishra_denbaars_1996, title={Stimulated emission and gain measurements from InGaN/GaN heterostructures}, booktitle={III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Krishnankkutty, S. and Keller, S. and Mishra, U. K. and DenBaars, S. P.}, year={1996}, pages={1209–1214} }
 @misc{carney_kolbas_1987, title={Integrated quantum well lasers for wavelength division multiplexing}, volume={4,637,122}, number={1987 Jan. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Carney, J. K. and Kolbas, R. M.}, year={1987} }
 @misc{carney_kolbas_1986, title={Integrated quantum well lasers for wavelength division multiplexing}, volume={4,577,321}, number={1986 Mar. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Carney, J. K. and Kolbas, R. M.}, year={1986} }
 @misc{kolbas_1985, title={Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components}, volume={4,532,694}, number={1985 Aug. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Kolbas, R. M.}, year={1985} }