2012 article
O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy
Lucovsky, G., Miotti, L., & Bastos, K. P. (2012, June). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4811–4819.
2012 article
Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165
Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012, June). Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4749–4756.
2011 journal article
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate
APPLIED PHYSICS LETTERS, 98(13).
2011 article
Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys
VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 193–211.
2011 journal article
Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics
Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).
2011 journal article
O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1).
2011 article
Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16
VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 361–376.
2010 article
Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 693–696.
2010 article
Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 662–664.
2009 article
Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3
Lucovsky, G., Chung, K.-B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009, December). SOLID-STATE ELECTRONICS, Vol. 53, pp. 1273–1279.
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