Karen Paz Bastos

Works (10)

Updated: July 5th, 2023 15:49

2012 article

O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012, June). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4811–4819.

By: G. Lucovsky n, L. Miotti* & K. Bastos*

author keywords: O-atom Vacancies; X-ray Absorption Spectroscopy; Transition Energies; Negative Ion States; Two Electron Multiplet Theory
MeSH headings : Computer Simulation; Crystallization; Electron Transport; Hafnium / chemistry; Materials Testing; Models, Chemical; Nanostructures / chemistry; Nanostructures / ultrastructure; Oxides / chemistry; Oxygen / chemistry; Semiconductors; Silicon Compounds / chemistry; Silicon Dioxide / chemistry; X-Ray Absorption Spectroscopy / methods
TL;DR: Two-electron multiplet theory has been used to develop a high-spin state equivalent d2 model for O-vacancy allowed transitions and negative ion states as detected by X-ray absorption spectroscopy in the O K pre-edge regime. (via Semantic Scholar)
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Source: Web Of Science
Added: August 6, 2018

2012 article

Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165

Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012, June). Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4749–4756.

By: G. Lucovsky n, L. Miotti*, K. Bastos*, C. Adamo & D. Schlom

author keywords: Mixed Valence States; X-ray Absorption Spectroscopy; Ti and Sc L-2,L-3 Transitions; In-Plane Hopping Conductivity; Charge Transfer Multiplet Theory
MeSH headings : Electron Transport; Magnetic Fields; Materials Testing; Nanostructures / chemistry; Nanostructures / ultrastructure; Oxides / chemistry; Particle Size; Spectrum Analysis / methods; Transition Elements / chemistry
TL;DR: This article combines X-ray absorption spectroscopy, multip let theory, charge transfer multiplet theory and degeneracy removal by Jahn-Teller effect mechanisms to demonstrate mixed valence for both Sc and Ti above a percolation threshold, x > 0.16, in which hopping transport gives rise to a metal to insulator transition. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

APPLIED PHYSICS LETTERS, 98(13).

By: G. Soares *, C. Krug *, L. Miotti n, K. Bastos n, G. Lucovsky n, I. Baumvol*, C. Radtke *

Source: Web Of Science
Added: August 6, 2018

2011 article

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 193–211.

By: G. Lucovsky n, L. Miotti n & K. Bastos n

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Source: Web Of Science
Added: August 6, 2018

2011 journal article

Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

By: G. Lucovsky n, L. Miotti n & K. Bastos n

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Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1).

By: G. Lucovsky n, L. Miotti n & K. Bastos n

Source: Web Of Science
Added: August 6, 2018

2011 article

Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16

VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 361–376.

By: G. Lucovsky n, L. Miotti n & K. Bastos n

Source: Web Of Science
Added: August 6, 2018

2010 article

Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 693–696.

By: L. Miotti n, K. Bastos n, G. Lucovsky n, C. Radtke * & D. Nordlund *

Source: Web Of Science
Added: August 6, 2018

2010 article

Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 662–664.

By: K. Bastos n, L. Miotti n, G. Lucovsky n, K. Chung* & D. Nordlund *

Source: Web Of Science
Added: August 6, 2018

2009 article

Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3

Lucovsky, G., Chung, K.-B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009, December). SOLID-STATE ELECTRONICS, Vol. 53, pp. 1273–1279.

By: G. Lucovsky n, K. Chung*, L. Miotti n, K. Bastos n, C. Amado * & D. Schlom *

author keywords: Transition metal elemental oxides; Complex oxides; Vacancy defects; Alternative valence defects and alloy atoms; Insulator metal phase transition
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Source: Web Of Science
Added: August 6, 2018

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