Karen Paz Bastos

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). Many-electron multiplet theory applied to O-vacancies in (i) nanocrystalline HfO2 and (ii) nn-crystalline SiO2 and Si oxynitride alloys. Vibronic interactions and the jahn-teller effect: theory and applications, 23, 193–211. https://doi.org/10.1007/978-94-007-2384-9_10

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy. Journal of Nanoscience and Nanotechnology, 12(6), 4811–4819. https://doi.org/10.1166/jnn.2012.4912

Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012). Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. Journal of Nanoscience and Nanotechnology, 12(6), 4749–4756. https://doi.org/10.1166/jnn.2012.4911

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). Spectroscopic detection of hopping induced mixed valence of Ti and Sc in GdSc1-xTixO3 for x greater than percolation threshold of 0.16. Vibronic interactions and the jahn-teller effect: theory and applications, 23, 361–376. https://doi.org/10.1007/978-94-007-2384-9_20

Soares, G. V., Krug, C., Miotti, L., Bastos, K. P., Lucovsky, G., Baumvol, I. J. R., & Radtke, C. (2011). Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate. Applied Physics Letters, 98(13). https://doi.org/10.1063/1.3574093

Lucovsky, G., Miotti, L., & Bastos, K. P. (2011). Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics. Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). https://doi.org/10.7567/jjap.50.04da15

Lucovsky, G., Miotti, L., & Bastos, K. P. (2011). O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1). https://doi.org/10.1116/1.3533758

Miotti, L., Bastos, K. P., Lucovsky, G., Radtke, C., & Nordlund, D. (2010). Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(4), 693–696. https://doi.org/10.1116/1.3430562

Bastos, K. P., Miotti, L., Lucovsky, G., Chung, K. B., & Nordlund, D. (2010). Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(4), 662–664. https://doi.org/10.1116/1.3430563

Lucovsky, G., Chung, K. B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009). Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3. Solid-state Electronics, 53(12), 1273–1279. https://doi.org/10.1016/j.sse.2009.10.012