Karen Paz Bastos

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys. VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 193–211. https://doi.org/10.1007/978-94-007-2384-9_10

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012, June). O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4811–4819. https://doi.org/10.1166/jnn.2012.4912

Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012, June). Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4749–4756. https://doi.org/10.1166/jnn.2012.4911

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16. VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 361–376. https://doi.org/10.1007/978-94-007-2384-9_20

Soares, G. V., Krug, C., Miotti, L., Bastos, K. P., Lucovsky, G., Baumvol, I. J. R., & Radtke, C. (2011). Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate. APPLIED PHYSICS LETTERS, 98(13). https://doi.org/10.1063/1.3574093

Lucovsky, G., Miotti, L., & Bastos, K. P. (2011). Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics. Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). https://doi.org/10.7567/jjap.50.04da15

Lucovsky, G., Miotti, L., & Bastos, K. P. (2011). O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). https://doi.org/10.1116/1.3533758

Miotti, L., Bastos, K. P., Lucovsky, G., Radtke, C., & Nordlund, D. (2010). Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 693–696. https://doi.org/10.1116/1.3430562

Bastos, K. P., Miotti, L., Lucovsky, G., Chung, K.-B., & Nordlund, D. (2010). Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 662–664. https://doi.org/10.1116/1.3430563

Lucovsky, G., Chung, K.-B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009, December). Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3. SOLID-STATE ELECTRONICS, Vol. 53, pp. 1273–1279. https://doi.org/10.1016/j.sse.2009.10.012