@inproceedings{sinha_cheng_parmar_hopkins_2023, title={Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates}, ISSN={["1048-2334"]}, url={http://dx.doi.org/10.1109/apec43580.2023.10131488}, DOI={10.1109/APEC43580.2023.10131488}, abstractNote={Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120µm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with $dv/dt$ of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.}, booktitle={2023 IEEE Applied Power Electronics Conference and Exposition (APEC)}, publisher={IEEE}, author={Sinha, Sourish S. and Cheng, Tzu-Hsuan and Parmar, Keval and Hopkins, Douglas C.}, year={2023}, month={Mar}, pages={2596–2603} }
 @article{narasimhan_sisson_leslie_parmar_rastogi_bhattacharya_2023, title={Design Considerations of a 3.3 kV SiC-based Reverse Voltage Blocking Module for Current Source Inverter Application}, ISSN={["1048-2334"]}, DOI={10.1109/APEC43580.2023.10131381}, abstractNote={This paper presents the design and development of a 3.3 kV silicon carbide (SiC) based reverse voltage blocking half-bridge module for the first time. This low inductance module can build a single-phase or a three-phase current source inverter (CSI). The module comprises of a SiC-MOSFET (3.3 kV/50 A die) and a SiC-MPS diode (3.3 kV/50 A die) to form a 3.3 kV SiC-based current switch in the half-bridge configuration. The static characterization of the current switch (CS) is performed, and a double pulse test circuit is used to verify the switching performance of the developed module. Additionally, the inverter efficiency is estimated for a 30 kW three-phase CSI for a motor drive application, using the obtained static and dynamic characterization results. The impact of the module inductances on the switch voltage and currents is discussed, thus illustrating the importance of a module-based design for CSI applications.}, journal={2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC}, author={Narasimhan, Sneha and Sisson, Colton and Leslie, Scott and Parmar, Keval and Rastogi, Sagar Kumar and Bhattacharya, Subhashish}, year={2023}, pages={350–357} }