2007 journal article
Intrinsic electronically active defects in transition metal elemental oxides
Communications & Review Papers, 46(4B), 1899–1909.
By: G. Lucovsky, H. Seo, S. Lee, L. Fleming, M. Ulrich, J. Luning, P. Lysaght, G. Bersuker
Local bonding analysis of the valence and conduction band features of TiO2
Journal of Applied Physics, 102(3).
By: L. Fleming, C. Fulton, G. Lucovsky, J. Rowe, M. Ulrich & J. Luning
Spectroscopic studies of O-vacancy defects in transition metal oxides
Journal of Materials Science. Materials in Electronics., 18, S263–266.
By: G. Lucovsky, J. Luning, L. Fleming, M. Ulrich, J. Rowe, H. Seo, S. Lee, P. Lysaght, G. Bersuker
Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies
Surface Science, 601(18), 4236–4241.
By: G. Lucovsky, H. Seo, L. Fleming, J. Luning, P. Lysaght & G. Bersuker
2006 journal article
Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 24(4), 2132–2137.
By: M. Ulrich, J. Rowe, J. Keister, H. Niimi, L. Fleming & G. Lucovsky
Intrinsic bonding defects in transition metal elemental oxides
Microelectronics Reliability, 46(9-11), 1623–1628.
By: G. Lucovsky, H. Seo, L. Fleming, M. Ulrich, J. Luning, P. Lysaght, G. Bersuker
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