Leda Lunardi

Fabrication of an Electrostatic Actuated Dielectric Mirror With Free-Standing Layers of Polymer

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(12), 6240–6248.

Heterojunction Bipolar Transistors and Monolithically Integrated Photoreceivers Among Other Applications

In Women in Microelectronics.

Women in Microelectronics

In Springer. http://www.springer.com/

Promoting academic and career success for raleigh future scholars at NC state university

ASEE Annual Conference and Exposition, Conference Proceedings, 2018-June. http://www.scopus.com/inward/record.url?eid=2-s2.0-85051175423&partnerID=MN8TOARS

Actuated polymer based dielectric mirror for visual spectral range applications

Nanoengineering: fabrication, properties, optics, and devices xiv, 10354.

Actuated polymer based dielectric mirror for visual spectral range applications

Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 10354.

Promoting academic and career success for Raleigh Future Scholars at NC State

ASEE Annual Conference and Exposition, Conference Proceedings, 2017-June. http://www.scopus.com/inward/record.url?eid=2-s2.0-85030554357&partnerID=MN8TOARS

III-V Tunnel FET Model With Closed-Form Analytical Solution

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(5), 2163–2168.

Lateral silicon photodiodes with extremely low dark current for visible and infra-red applications

2015 photonics conference (ipc), 446–447.

A compact model for compound semiconductor tunneling field-effect-transistors

Conference Proceedings - IEEE SOUTHEASTCON.

Optoelectronic Devices

In Guide to State-of-the-Art Electron Devices (pp. 265–274).

Undergraduate research and the smart grid: REU-Site: Engineering the grid

ASEE Annual Conference and Exposition, Conference Proceedings. http://www.scopus.com/inward/record.url?eid=2-s2.0-84884333631&partnerID=MN8TOARS

Intermetallic Formation in PZT for MEMS Structures

Materials Research Society Symposium Proceedings, 1427, 56–61.

The Evolution of Optical Networking

Tomkos, I., Mukherjee, B., Korotky, S. K., Tucker, R. S., & Lunardi, L. (2012, May). PROCEEDINGS OF THE IEEE, Vol. 100, pp. 1017–1022.

Transparent IGZO-Based Logic Gates

IEEE ELECTRON DEVICE LETTERS, 33(5), 673–675.

Analytical Correction for Effective Mobility Measurements in MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2871–2873.

Amorphous InGaZnO logic gates for transparent electronics

Device Research Conference - Conference Digest, DRC, 121–122.

Fabrication of Nanoshell Arrays Using Directed Assembly of Nanospheres

IEEE SENSORS JOURNAL, 10(3), 617–620.

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors

IEEE ELECTRON DEVICE LETTERS, 31(4), 317–319.

Guest Editorial Special Issue on Light-Emitting Diodes

IEEE Transactions on Electron Devices, 57(1), 7–11.

Special issue on light-emitting diodes

IEEE Transactions on Electron Devices, 57(1), 7–11.

An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel

JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445.

Controlling the wrinkling of the bilayer thin films electrothermally

Materials Research Society Symposium Proceedings, 1139, 97–102. http://www.scopus.com/inward/record.url?eid=2-s2.0-70449574600&partnerID=MN8TOARS

Characterization of silicon nitride micromachined beams via remote optical interrogation

IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006, 138–139.

Optical characterization of Eu-doped β-Ga2O3 thin films

Applied Physics Letters, 88(22), 221906.

Gallium Oxide as a host for rare earth elements

Materials Research Society Symposium Proceedings, 866, 177–182.

Plenary session

Technical Digest - International Electron Devices Meeting, 1. http://www.scopus.com/inward/record.url?eid=2-s2.0-0842288304&partnerID=MN8TOARS

Tunable Dispersion Compensation at 10Gb/s and 40Gb/S Using Multicavity All-Pass Etalons

Conference on Optical Fiber Communication, Technical Digest Series, 86, 162–163. http://www.scopus.com/inward/record.url?eid=2-s2.0-1642524225&partnerID=MN8TOARS

Welcome from the general chair

Technical Digest - International Electron Devices Meeting. http://www.scopus.com/inward/record.url?eid=2-s2.0-0842266682&partnerID=MN8TOARS

40 nm broadband SOA-Raman hybrid amplifier

Conference on Optical Fiber Communication, Technical Digest Series, 70, 390–391. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036438676&partnerID=MN8TOARS

Advanced components and sub-system solutions for 40 Gb/s transmission

Journal of Lightwave Technology, 20(12), 2154–2181.

Raman tilt and nonideal tilt control function of C-band erbium-doped fiber amplifiers

Optical Components and Transmission Systems, 4906, 185–192.

SOA characteristics for L-BAND system applications

European Conference on Optical Communication, ECOC, 3. http://www.scopus.com/inward/record.url?eid=2-s2.0-84949009348&partnerID=MN8TOARS

Semiconductor devices for fiber optic communication systems

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1, 99–102.

Tunable dispersion compensation at 40-Gb/s using a multicavity etalon all-pass filter with NRZ, RZ, and CS-RZ modulation

Journal of Lightwave Technology, 20(12), 2136–2144.

Bi-directionally pumped broadband Raman amplifier

European Conference on Optical Communication, ECOC, 2, 230–231. http://www.scopus.com/inward/record.url?eid=2-s2.0-0035741267&partnerID=MN8TOARS

Challenges in component testing for optical systems

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 540–541.

10-Gbit/s RZ pulses using an all-silicon nonlinear transmission line integrated circuit

Conference on Optical Fiber Communication, Technical Digest Series, 1, 248–250. http://www.scopus.com/inward/record.url?eid=2-s2.0-0033645117&partnerID=MN8TOARS

Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors

Solid-State Electronics, 44(7), 1331–1333.

Backreflection and loss in single-fiber loopback networks

IEEE Photonics Technology Letters, 12(8), 1106–1108.

Crosstalk in a metro-scale ring with passive optical add/drop

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 694–695. http://www.scopus.com/inward/record.url?eid=2-s2.0-0034481563&partnerID=MN8TOARS

Integrated signal monitoring and connection verification in MEMS optical crossconnects

IEEE Photonics Technology Letters, 12(7), 885–887.

Heterostructure circuit applications in optical communications

Solid-State Electronics, 43(8), 1627–1632.

Micromachined optical crossconnects with integrated signal-monitoring functionality

Conference on Optical Fiber Communication, Technical Digest Series. http://www.scopus.com/inward/record.url?eid=2-s2.0-0032638549&partnerID=MN8TOARS

Micromachined optical crossconnects with integrated signal-monitoring functionality

OFC/IOOC 1999 - Optical Fiber Communication Conference and the International Conference on Integrated Optics and Optical Fiber Communication, 4, 128–130.

Micromachined optical-switching technologies for WDM networks

LEOS Summer Topical Meeting, 57–58. http://www.scopus.com/inward/record.url?eid=2-s2.0-0032599069&partnerID=MN8TOARS

Optical crossconnects for high-capacity lightwave networks

Journal of High Speed Networks, 8(1), 17–34. http://www.scopus.com/inward/record.url?eid=2-s2.0-0004664608&partnerID=MN8TOARS

A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)

IEEE Transactions on Microwave Theory and Techniques, 45(1), 39–45.

InP-based monolithically integrated photoreceivers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 471–474. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030681951&partnerID=MN8TOARS

Performance of 8-channel OEIC receiver array in 8 x 2.5 Gb/s WDM transmission experiment

IEEE Photonics Technology Letters, 9(2), 235–237.

Performance of eight-channel InP p-i-n/HBT receiver array in 8×2.5 Gbit/s wavelength-division multiplexed transmission experiment

Conference on Optical Fiber Communication, Technical Digest Series, 14–15. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030714247&partnerID=MN8TOARS

Performance of eight-channel OEIC p-i-n/HBT receiver array in 8×2.5 Gb/s WDM transmission system

Journal of Lightwave Technology, 15(5), 827–832.

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Optical and Quantum Electronics, 29(10), 953–959.

10-Gbit/s penalty-free optical transmission over 102.5 km of standard fiber using 1.3-μm electroabsorption modulated laser and Raman amplifier

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2–3. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029705732&partnerID=MN8TOARS

Analysis of the large-signal characteristics of InP/ InGaAs-based optoelectronic preamplifiers

Microwave and Optical Technology Letters, 11(3), 163–168.

Integrated p-i-n/HBT photoreceivers for optical communications

Technical Digest - International Electron Devices Meeting, 645–648. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030383548&partnerID=MN8TOARS

Investigation of crosstalk performance of eight-channel p-i-n/HBT OEIC photoreceiver array modules

IEEE Photonics Technology Letters, 8(5), 682–684.

Large-area InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode with low dark current

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 330–331. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030397433&partnerID=MN8TOARS

Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers

IEEE Transactions on Electron Devices, 43(12), 2053–2061.

Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications

Journal of Crystal Growth, 164(1-4), 362–370.

Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors

IEEE Transactions on Electron Devices, 43(5), 784–792.

'High speed HBT-based OEIC photoreceivers for long wavelength system applications'

LEOS Summer Topical Meeting. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029539677&partnerID=MN8TOARS

15 Gbit/s pin/HBT optoelectronic integrated photoreceiver module realised using MOVPE material

Electronics Letters, 31(14), 1185–1186.

16 GHz bandwidth InAlAs/InGaAs monolithically integrated pin-HBT photoreceiver

European Conference on Optical Communication, ECOC, 2, 661–664. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029452304&partnerID=MN8TOARS

16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver

IEEE Photonics Technology Letters, 7(11), 1339–1341.

20 Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55 μm applications

European Conference on Optical Communication, ECOC, 2, 657–660. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029453480&partnerID=MN8TOARS

20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications

IEEE Photonics Technology Letters, 7(10), 1201–1203.

A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems

IEEE Photonics Technology Letters, 7(2), 182–184.

Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP‐based heterostructure bipolar transistor devices

Applied Physics Letters, 67, 2226.

Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy

Journal of Crystal Growth, 148(1-2), 1–7.

High-performance p-i-n/HBT monolithic photoreceivers for lightwave communications

Proceedings of SPIE - The International Society for Optical Engineering, 2613, 91–97. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029483865&partnerID=MN8TOARS

Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 648–651. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029217866&partnerID=MN8TOARS

Monolithic eight-wavelength demultiplexed receiver for dense WDM applications

IEEE Photonics Technology Letters, 7(11), 1342–1344.

Wide bandwidth InAlAs/InGaAs monolithic PIN-HBT photoreceiver

LEOS Summer Topical Meeting. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029507792&partnerID=MN8TOARS

12 Gb/s high performance, high sensitivity monolithic p-i-n/HBT photoreceiver module for long wavelength transmission systems

European Conference on Optical Communication, ECOC, 121–124. http://www.scopus.com/inward/record.url?eid=2-s2.0-38449117570&partnerID=MN8TOARS

Comparison of low-frequency noise characteristics of silicon homojunction and III-V heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 535–538. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028202020&partnerID=MN8TOARS

Eight-Channel p-i-n/HBT Monolithic Receiver Array at 2.5 Gb/s Per Channel for WDM Applications

IEEE Photonics Technology Letters, 6(10), 1216–1218.

Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 243–246. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028202387&partnerID=MN8TOARS

High-speed burst-mode OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Conference on Optical Fiber Communication, Technical Digest Series, 4, 30–31. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028135955&partnerID=MN8TOARS

High speed and high performance long wavelength OEICs using heterojunction bipolar transistors

Proceedings - 6th Annual IEEE International ASIC Conference and Exhibit, ASIC 1993, 490–493.

High-Speed, High-Current-Gain P-n-p InP/InGaAs Heterojunction Bipolar Transistors

IEEE Electron Device Letters, 14(1), 19–21.

High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure

IEEE Photonics Technology Letters, 5(11), 1316–1318.

A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Electronics Letters, 28(5), 466–468.

IVA-8 High-Speed InP/InGaAs p-n-p Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices, 39(11), 2659.

Microwave multiple-state resonant tunneling bipolar transistors

Electron Device Letters, v(n), 219–221. http://www.scopus.com/inward/record.url?eid=2-s2.0-34250837017&partnerID=MN8TOARS

Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems

Proceedings of SPIE - The International Society for Optical Engineering, 1680, 27–32. http://www.scopus.com/inward/record.url?eid=2-s2.0-0026961894&partnerID=MN8TOARS

Band gap engineering of III-V semiconductors by MBE using electron beam evaporation of group III metals

Proceedings of SPIE - The International Society for Optical Engineering, 1285, 76–84.

Carbon-Doped Base GaAs-AlGaAs HBT's Grown by MOMBE and MOCVD Regrowth

IEEE Electron Device Letters, 11(6), 241–243.

Characteristics of AlGaAs/GaAs thin emitter heterojunction bipolar transistors

Proceedings of SPIE - The International Society for Optical Engineering, 1288, 44–56.

High Speed Linear Array Circuit with AIGaAs/Gaas Heterojunction Bipolar Transistors (HBTs)

Electronics Letters, 26(15), 1157–1159.

AIGaAs/GaAs Heterojunction Bipolar Transistor Decision Circuit

Electronics Letters, 25(2), 118–119.

Diffusion and drift of Si dopants in δ-doped n-type Al xGa1-xAs

Applied Physics Letters, 54(25), 2592–2594.

Implant-induced high-resistivity regions in InP and InGaAs

Journal of Applied Physics, 66(2), 656–662.

Microwave Multiple-State Resonant-Tunneling Bipolar Transistors

IEEE Electron Device Letters, 10(5), 219–221.

Quantum Functional Devices: Resonant-Tunneling Transistors, Circuits with Reduced Complexity, and Multiple-Valued Logic

IEEE Transactions on Electron Devices, 36(10), 2065–2082.

Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area

Electronics Letters, 25(17), 1175–1177.

A Planar-Doped 2D-Hole Gas Base AlGaAs/GaAs Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy

IEEE Electron Device Letters, 9(1), 7–9.

OPTIMIZATION OF THE INJECTION EFFICIENCY ( gamma ) OF THE HBT BY STUDYING ELECTROLUMINESCENCE (EL) OF MBE HETEROJUNCTION DIODES.

Institute of Physics Conference Series, (74), 599–604. http://www.scopus.com/inward/record.url?eid=2-s2.0-0022247171&partnerID=MN8TOARS

High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy

Electronics Letters, 19(8), 278–280.

InP-based monolithically integrated photoreceivers

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Integrated p-i-n/HBT photoreceivers for optical communications

International Electron Devices Meeting. Technical Digest.

Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design

Seventh International Conference on Indium Phosphide and Related Materials.