@article{ives_zeller_lucovsky_schamiloglu_marsden_collins_nichols_karimov_2015, title={Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition}, volume={43}, ISSN={["1939-9375"]}, DOI={10.1109/tps.2015.2450678}, number={8}, journal={IEEE TRANSACTIONS ON PLASMA SCIENCE}, author={Ives, Robert Lawrence and Zeller, Daniel and Lucovsky, Gerry and Schamiloglu, Edl and Marsden, David and Collins, George and Nichols, Kimberley and Karimov, Rasul}, year={2015}, month={Aug}, pages={2571–2580} }
 @article{lucovsky_zeller_cheng_zhang_2014, title={Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices}, volume={242}, ISSN={["0257-8972"]}, DOI={10.1016/j.surfcoat.2013.06.104}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Lucovsky, G. and Zeller, D. J. and Cheng, C. and Zhang, Y.}, year={2014}, month={Mar}, pages={183–186} }
 @article{lucovsky_2013, title={Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2}, volume={52}, number={4}, journal={Japanese Journal of Applied Physics}, author={Lucovsky, G.}, year={2013} }
 @article{lucovsky_2013, title={Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2}, volume={83}, ISSN={["1879-2405"]}, DOI={10.1016/j.sse.2013.01.028}, journal={SOLID-STATE ELECTRONICS}, author={Lucovsky, Gerald}, year={2013}, month={May}, pages={30–36} }
 @inproceedings{lucovsky_wu_pappas_whitten_2013, title={Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects}, volume={428}, booktitle={Xxist international symposium on the jahn-teller effect 2012}, author={Lucovsky, G. and Wu, K. and Pappas, B. and Whitten, J.}, year={2013} }
 @inproceedings{lucovsky_2013, title={Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) defect reduction for device applications}, booktitle={2013 14th international conference on ultimate integration on silicon (ulis)}, author={Lucovsky, G.}, year={2013}, pages={217–220} }
 @article{lucovsky_kim_wu_zeller_2013, title={Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites}, volume={31}, ISSN={["2166-2746"]}, DOI={10.1116/1.4773923}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Lucovsky, Gerald and Kim, Jinwoo and Wu, Kun and Zeller, Daniel}, year={2013}, month={Jan} }
 @article{lucovsky_zeller_kim_wu_2013, title={Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites}, volume={428}, ISSN={["1742-6596"]}, DOI={10.1088/1742-6596/428/1/012017}, journal={XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012}, author={Lucovsky, Gerald and Zeller, Daniel and Kim, JinWoo and Wu, Kun}, year={2013} }
 @inproceedings{lucovsky_kim_2013, title={Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies}, booktitle={2013 14th international conference on ultimate integration on silicon (ulis)}, author={Lucovsky, G. and Kim, J.}, year={2013}, pages={174–177} }
 @article{lucovsky_parsons_zeller_kim_2013, title={Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon}, volume={52}, ISSN={["1347-4065"]}, DOI={10.7567/jjap.52.04cr10}, number={4}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Lucovsky, Gerry and Parsons, Greg and Zeller, Daniel and Kim, Jinwoo}, year={2013}, month={Apr} }
 @article{lucovsky_kim_2013, title={Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys}, volume={31}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Kim, J.}, year={2013} }
 @article{lucovsky_miotti_bastos_2012, title={Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys}, volume={23}, ISBN={["978-94-007-2383-2"]}, ISSN={["1567-7354"]}, DOI={10.1007/978-94-007-2384-9_10}, journal={VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS}, author={Lucovsky, Gerry and Miotti, Leonardo and Bastos, Karen Paz}, year={2012}, pages={193–211} }
 @article{lucovsky_miotti_bastos_2012, title={O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy}, volume={12}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2012.4912}, number={6}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Lucovsky, Gerald and Miotti, Leonardo and Bastos, Karen Paz}, year={2012}, month={Jun}, pages={4811–4819} }
 @article{lucovsky_miotti_bastos_adamo_schlom_2012, title={Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165}, volume={12}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2012.4911}, number={6}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Lucovsky, Gerald and Miotti, Leonardo and Bastos, Karen Paz and Adamo, Carolina and Schlom, Darrell G.}, year={2012}, month={Jun}, pages={4749–4756} }
 @article{lucovsky_miotti_bastos_2012, title={Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16}, volume={23}, ISSN={["1567-7354"]}, DOI={10.1007/978-94-007-2384-9_20}, journal={VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS}, author={Lucovsky, Gerry and Miotti, Leonardo and Bastos, Karen Paz}, year={2012}, pages={361–376} }
 @article{gokce_aspnes_lucovsky_gundogdu_2011, title={Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping}, volume={98}, number={2}, journal={Applied Physics Letters}, author={Gokce, B. and Aspnes, D. E. and Lucovsky, G. and Gundogdu, K.}, year={2011} }
 @article{washington_joseph_raoux_jordan-sweet_miller_cheng_schrott_chen_dasaka_shelby_et al._2011, title={Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5}, volume={109}, ISSN={["1089-7550"]}, DOI={10.1063/1.3524510}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Washington, J. S. and Joseph, E. A. and Raoux, S. and Jordan-Sweet, J. L. and Miller, D. and Cheng, H. -Y. and Schrott, A. G. and Chen, C. -F. and Dasaka, R. and Shelby, B. and et al.}, year={2011}, month={Feb} }
 @article{soares_krug_miotti_bastos_lucovsky_baumvol_radtke_2011, title={Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate}, volume={98}, ISSN={["0003-6951"]}, DOI={10.1063/1.3574093}, number={13}, journal={APPLIED PHYSICS LETTERS}, author={Soares, G. V. and Krug, C. and Miotti, L. and Bastos, K. P. and Lucovsky, G. and Baumvol, I. J. R. and Radtke, C.}, year={2011}, month={Mar} }
 @article{lucovsky_miotti_bastos_2011, title={Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics}, volume={50}, DOI={10.7567/jjap.50.04da15}, number={4}, journal={Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers}, author={Lucovsky, G. and Miotti, L. and Bastos, K. P.}, year={2011} }
 @article{lucovsky_2011, title={Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films}, volume={50}, number={4}, journal={Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers}, author={Lucovsky, G.}, year={2011} }
 @article{katz_zhang_hughes_chung_lucovsky_brillson_2011, title={Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics}, volume={29}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Katz, E. J. and Zhang, Z. and Hughes, H. L. and Chung, K. B. and Lucovsky, G. and Brillson, L. J.}, year={2011} }
 @article{lucovsky_kim_wu_zeller_papas_whitten_2011, title={Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites}, volume={13}, number={11-12}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Kim, J. W. and Wu, K. and Zeller, D. and Papas, B. and Whitten, J. L.}, year={2011}, pages={1359–1363} }
 @article{lucovsky_miotti_bastos_2011, title={O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy}, volume={29}, ISSN={["2166-2746"]}, DOI={10.1116/1.3533758}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Lucovsky, Gerald and Miotti, Leonardo and Bastos, Karen Paz}, year={2011}, month={Jan} }
 @article{lucovsky_zeller_whitten_2011, title={O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides}, volume={88}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/j.mee.2011.03.153}, DOI={10.1016/j.mee.2011.03.153}, number={7}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Lucovsky, G. and Zeller, D. and Whitten, J.L.}, year={2011}, month={Jul}, pages={1471–1474} }
 @article{schrimpf_fleetwood_alles_reed_lucovsky_pantelides_2011, title={Radiation effects in new materials for nano-devices (invited)}, volume={88}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2011.03.117}, number={7}, journal={MICROELECTRONIC ENGINEERING}, author={Schrimpf, R. D. and Fleetwood, D. M. and Alles, M. L. and Reed, R. A. and Lucovsky, G. and Pantelides, S. T.}, year={2011}, month={Jul}, pages={1259–1264} }
 @article{lucovsky_zeller_2011, title={Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates}, volume={11}, ISSN={["1533-4880"]}, DOI={10.1166/jnn.2011.5090}, number={9}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Lucovsky, Gerald and Zeller, Daniel}, year={2011}, month={Sep}, pages={7974–7981} }
 @article{lucovsky_kim_2011, title={Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2}, volume={11}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2011.5089}, number={9}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Lucovsky, Gerald and Kim, Jinwoo}, year={2011}, month={Sep}, pages={7962–7968} }
 @article{lucovsky_zeller_wu_whitten_2011, title={Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2}, volume={88}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/j.mee.2011.03.152}, DOI={10.1016/j.mee.2011.03.152}, number={7}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Lucovsky, G. and Zeller, D. and Wu, K. and Whitten, J.L.}, year={2011}, month={Jul}, pages={1537–1540} }
 @article{lucovsky_miotti_bastos_adamo_schlom_2011, title={Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x greater than the percolation threshold of similar to 0.16}, volume={29}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Miotti, L. and Bastos, K. P. and Adamo, C. and Schlom, D. G.}, year={2011} }
 @article{lucovsky_parsons_zeller_wu_papas_whitten_lujan_street_2011, title={Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)}, volume={13}, number={11-12}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Parsons, G. and Zeller, D. and Wu, K. and Papas, B. and Whitten, J. and Lujan, R. and Street, R. A.}, year={2011}, pages={1586–1589} }
 @inproceedings{lucovsky_phillips_2010, title={A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-x alloys}, volume={7}, number={3-4}, booktitle={Physica status solidi c - current topics in solid state physics, vol 7 no 3-4}, author={Lucovsky, G. and Phillips, J. C.}, year={2010}, pages={889–892} }
 @article{lucovsky_washington_miotti_paesler_2010, title={Analysis of the forgotten parts of the Ge K edge spectra: life before the EXAFS oscillations}, volume={7}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.200982887}, number={3-4}, journal={PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4}, author={Lucovsky, Gerald and Washington, Joseph P. and Miotti, Leonardo and Paesler, Michael}, year={2010}, pages={844–847} }
 @article{seo_kim_lucovsky_kim_chung_kobayashi_choi_2010, title={Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state}, volume={107}, number={2}, journal={Journal of Applied Physics}, author={Seo, H. and Kim, Y. B. and Lucovsky, G. and Kim, I. D. and Chung, K. B. and Kobayashi, H. and Choi, D. K.}, year={2010} }
 @article{miotti_bastos_lucovsky_radtke_nordlund_2010, title={Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy}, volume={28}, ISSN={["0734-2101"]}, DOI={10.1116/1.3430562}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Miotti, Leonardo and Bastos, Karen P. and Lucovsky, Gerald and Radtke, Claudio and Nordlund, Dennis}, year={2010}, pages={693–696} }
 @article{bastos_miotti_lucovsky_chung_nordlund_2010, title={Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing}, volume={28}, ISSN={["0734-2101"]}, DOI={10.1116/1.3430563}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bastos, Karen Paz and Miotti, Leonardo and Lucovsky, Gerald and Chung, Kwun-Bum and Nordlund, Dennis}, year={2010}, pages={662–664} }
 @article{lucovsky_phillips_2010, title={Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications}, volume={5}, ISSN={["1931-7573"]}, DOI={10.1007/s11671-009-9520-6}, number={3}, journal={NANOSCALE RESEARCH LETTERS}, author={Lucovsky, Gerald and Phillips, James C.}, year={2010}, month={Mar}, pages={550–558} }
 @article{lucovsky_2010, title={Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films}, volume={207}, ISSN={["1862-6319"]}, DOI={10.1002/pssa.200982841}, number={3}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Lucovsky, Gerald}, year={2010}, month={Mar}, pages={631–634} }
 @article{lucovsky_2010, title={Untitled}, volume={28}, number={6}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Lucovsky, G.}, year={2010}, pages={P1–1} }
 @article{gundogdu_lucovsky_chung_kim_nordlund_2009, title={Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics}, volume={86}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2009.03.004}, number={7-9}, journal={MICROELECTRONIC ENGINEERING}, author={Gundogdu, K. and Lucovsky, G. and Chung, K-B. and Kim, J. -W. and Nordlund, D.}, year={2009}, pages={1654–1657} }
 @book{phillips_lucovsky._2009, title={Bonds and bands in semiconductors}, publisher={New York: Momentum Press}, author={Phillips, J.C. and Lucovsky., Gerald}, year={2009} }
 @article{lucovsky_chung_miotti_bastos_amado_schlom_2009, title={Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3}, volume={53}, ISSN={["1879-2405"]}, DOI={10.1016/j.sse.2009.10.012}, number={12}, journal={SOLID-STATE ELECTRONICS}, author={Lucovsky, Gerald and Chung, Kwun-Bum and Miotti, Leonardi and Bastos, Karen Pas and Amado, Carolina and Schlom, Darrell}, year={2009}, month={Dec}, pages={1273–1279} }
 @article{lucovsky_2009, title={Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications}, volume={206}, ISSN={["1862-6319"]}, DOI={10.1002/pssa.200881312}, number={5}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Lucovsky, Gerald}, year={2009}, month={May}, pages={915–918} }
 @article{seo_bellenger_chung_houssa_meuris_heyns_lucovsky_2009, title={Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates}, volume={106}, ISSN={["1089-7550"]}, DOI={10.1063/1.3204026}, number={4}, journal={JOURNAL OF APPLIED PHYSICS}, author={Seo, H. and Bellenger, F. and Chung, K. B. and Houssa, M. and Meuris, M. and Heyns, M. and Lucovsky, G.}, year={2009}, month={Aug} }
 @article{chung_lucovsky_lee_cho_jeon_2009, title={Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers}, volume={94}, ISSN={["0003-6951"]}, DOI={10.1063/1.3077014}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Chung, K. B. and Lucovsky, G. and Lee, W. J. and Cho, M. -H. and Jeon, Hyeongtag}, year={2009}, month={Jan} }
 @article{lucovsky_lee_long_seo_luening_2009, title={Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks}, volume={86}, ISSN={["0167-9317"]}, DOI={10.1016/j.mee.2008.05.023}, number={3}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G. and Lee, S. and Long, J. P. and Seo, H. and Luening, J.}, year={2009}, month={Mar}, pages={224–234} }
 @article{lucovsky_2009, title={Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x)}, volume={89}, ISSN={["1478-6435"]}, DOI={10.1080/14786430902729540}, number={28-30}, journal={PHILOSOPHICAL MAGAZINE}, author={Lucovsky, G.}, year={2009}, pages={2449–2460} }
 @inproceedings{lucovsky_2009, title={Long range cooperative and local Jahn-Teller effects in nanocrystalline transition metal thin films}, volume={97}, booktitle={Jahn-teller effect: fundamentals and implications for physics and chemistry}, author={Lucovsky, G.}, year={2009}, pages={767–808} }
 @article{lucovsky_phillips_2009, title={Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys}, volume={206}, ISSN={["1862-6300"]}, DOI={10.1002/pssa.200881311}, number={5}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Lucovsky, Gerald and Phillips, James C.}, year={2009}, month={May}, pages={885–891} }
 @inproceedings{lucovsky_long_chung_seo_watts_vasic_ulrich_2009, title={Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics}, volume={27}, number={1}, booktitle={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Long, J. P. and Chung, K. B. and Seo, H. and Watts, B. and Vasic, R. and Ulrich, M. D.}, year={2009}, pages={294–299} }
 @article{seo_chung_long_lucovsky_2009, title={Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks}, volume={156}, ISSN={["1945-7111"]}, DOI={10.1149/1.3212848}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Seo, H. and Chung, K. B. and Long, J. P. and Lucovsky, G.}, year={2009}, pages={H813–H817} }
 @article{lucovsky_chung_kim_norlund_2009, title={Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy}, volume={86}, ISSN={["0167-9317"]}, DOI={10.1016/j.mee.2009.03.005}, number={7-9}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G. and Chung, K-B and Kim, J. -W. and Norlund, D.}, year={2009}, pages={1676–1679} }
 @article{lucovsky_phillips_2009, title={Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys}, volume={355}, ISSN={["0022-3093"]}, DOI={10.1016/j.jnoncrysol.2009.04.044}, number={37-42}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, Gerald and Phillips, Jim C.}, year={2009}, month={Oct}, pages={1786–1791} }
 @article{lucovsky_phillips_2009, title={Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses}, volume={246}, ISSN={["0370-1972"]}, DOI={10.1002/pssb.200982008}, number={8}, journal={PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS}, author={Lucovsky, Gerald and Phillips, James C.}, year={2009}, month={Aug}, pages={1806–1812} }
 @inproceedings{washington_josep_paesler_lucovsky_jordan-sweet_raoux_chen_pyzyna_dasaka_schrott_et al._2009, title={The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5}, volume={1160}, DOI={10.1557/proc-1160-h13-08}, booktitle={Materials and physics for nonvolatile memories}, author={Washington, J. S. and Josep, E. and Paesler, M. A. and Lucovsky, G. and Jordan-Sweet, J. L. and Raoux, S. and Chen, C. F. and Pyzyna, A. and Dasaka, R. K. and Schrott, A. and et al.}, year={2009}, pages={163–168} }
 @article{chung_long_seo_lucovsky_nordlund_2009, title={Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry}, volume={106}, number={7}, journal={Journal of Applied Physics}, author={Chung, K. B. and Long, J. P. and Seo, H. and Lucovsky, G. and Nordlund, D.}, year={2009} }
 @article{agarwal_paesler_baker_taylor_lucovsky_edwards_2008, title={Bond constraint theory and the quest for the glass computer}, volume={70}, ISSN={["0973-7111"]}, DOI={10.1007/s12043-008-0043-y}, number={2}, journal={PRAMANA-JOURNAL OF PHYSICS}, author={Agarwal, S. C. and Paesler, M. A. and Baker, D. A. and Taylor, P. C. and Lucovsky, G. and Edwards, A.}, year={2008}, month={Feb}, pages={245–254} }
 @article{paesler_baker_lucovsky_2008, title={Bond constraint theory studies of chalcogenide phase change memories}, volume={354}, DOI={10.1016/j.jnoncryso1.2007.09.045}, number={19-25}, journal={Journal of Non-crystalline Solids}, author={Paesler, M. A. and Baker, D. A. and Lucovsky, G.}, year={2008}, pages={2706–2710} }
 @article{lee_seo_lucovsky_fleming_ulrich_luening_2008, title={Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics}, volume={517}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2008.08.098}, number={1}, journal={THIN SOLID FILMS}, author={Lee, S. and Seo, H. and Lucovsky, G. and Fleming, L. B. and Ulrich, M. D. and Luening, J.}, year={2008}, month={Nov}, pages={437–440} }
 @article{lucovsky_whitten_2008, title={Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr),/high-k gate dielectric, Hf(Zr)O(2), interfaces}, volume={517}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2008.08.034}, number={1}, journal={THIN SOLID FILMS}, author={Lucovsky, G. and Whitten, J. L.}, year={2008}, month={Nov}, pages={343–345} }
 @article{lucovsky_kasap_phillips_2008, title={Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H)}, volume={354}, ISSN={["1873-4812"]}, DOI={10.1016/j.jnoncrysol.2007.09.048}, number={19-25}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, Gerald and Kasap, Safa O. and Phillips, James C.}, year={2008}, month={May}, pages={2724–2727} }
 @article{lucovsky_lee_long_seo_luning_2008, title={Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates}, volume={254}, DOI={10.1016/j.apsusc.2008.03.157}, number={23}, journal={Applied Surface Science}, author={Lucovsky, G. and Lee, S. and Long, J. P. and Seo, H. and Luning, J.}, year={2008}, pages={7933–7937} }
 @article{lucovsky_phillips_2008, title={Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain}, volume={354}, DOI={10.1016/j.jnoncryso1.2007.09.044}, number={19-25}, journal={Journal of Non-crystalline Solids}, author={Lucovsky, G. and Phillips, J. C.}, year={2008}, pages={2702–2705} }
 @article{strzhemechny_bataiev_tumakha_goss_hinkle_fulton_lucovsky_brillson_2008, title={Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks}, volume={26}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Strzhemechny, Y. M. and Bataiev, M. and Tumakha, S. P. and Goss, S. H. and Hinkle, C. L. and Fulton, C. C. and Lucovsky, G. and Brillson, L. J.}, year={2008}, pages={232–243} }
 @article{lucovsky_phillips_2008, title={Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories}, volume={354}, ISSN={["0022-3093"]}, DOI={10.1016/j.jnoncrysol.2007.09.059}, number={19-25}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, Gerald and Phillips, James C.}, year={2008}, month={May}, pages={2753–2756} }
 @article{lee_long_lucovsky_luening_2008, title={Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates}, volume={517}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2008.08.099}, number={1}, journal={THIN SOLID FILMS}, author={Lee, S. and Long, J. P. and Lucovsky, G. and Luening, J.}, year={2008}, month={Nov}, pages={155–158} }
 @article{lee_long_lucovsky_whitten_seo_luning_2008, title={Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices}, volume={48}, ISSN={["0026-2714"]}, DOI={10.1016/j.microrel.2007.07.068}, number={3}, journal={MICROELECTRONICS RELIABILITY}, author={Lee, S. and Long, J. P. and Lucovsky, G. and Whitten, J. L. and Seo, H. and Luning, J.}, year={2008}, month={Mar}, pages={364–369} }
 @article{chung_seo_long_lucovsky_2008, title={Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates}, volume={93}, ISSN={["0003-6951"]}, DOI={10.1063/1.3005422}, number={18}, journal={APPLIED PHYSICS LETTERS}, author={Chung, K. B. and Seo, H. and Long, J. P. and Lucovsky, G.}, year={2008}, month={Nov} }
 @article{lucovsky_phillips_2007, title={A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism}, volume={19}, number={45}, journal={Journal of Physics. Condensed Matter}, author={Lucovsky, G. and Phillips, J. C.}, year={2007} }
 @article{lucovsky_phillips_2007, title={A self-consistent model for defect states in a-Si and a-Si : H}, volume={18}, journal={Journal of Materials Science. Materials in Electronics.}, author={Lucovsky, G. and Phillips, J.}, year={2007}, pages={S463–467} }
 @misc{lucovsky_2007, title={Band edge electronic structure of transition metal/rare earth oxide dielectrics}, volume={106}, journal={Rare Earth Oxide Thin Films: Growth , Characterization , and Applications}, publisher={Berlin: Springer-Verlag Berlin}, author={Lucovsky, G.}, year={2007}, pages={285–311} }
 @article{paesler_baker_lucovsky_taylor_washington_2007, title={Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7}, volume={9}, number={10}, journal={Journal of Optoelectronics and Advanced Materials}, author={Paesler, M. A. and Baker, D. A. and Lucovsky, G. and Taylor, P. C. and Washington, J. S.}, year={2007}, pages={2996–3001} }
 @article{lucovsky_phillips_2007, title={Chemical self-organization length scales in non- and nano-crystalline thin films}, volume={51}, ISSN={["1879-2405"]}, DOI={10.1016/j.sse.2007.06.001}, number={10}, journal={SOLID-STATE ELECTRONICS}, author={Lucovsky, G. and Phillips, J. C.}, year={2007}, month={Oct}, pages={1308–1318} }
 @article{lucovsky_seo_lee_fleming_ulrich_luning_2007, title={Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics}, volume={84}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2007.04.062}, number={9-10}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G. and Seo, H. and Lee, S. and Fleming, L. B. and Ulrich, M. D. and Luning, J.}, year={2007}, pages={2350–2353} }
 @article{lucovsky_phillips_2007, title={Defect reduction in non-crystalline and nano-crystalline thin films: chemical bonding self-organizations and minimization of macroscopic strain}, volume={9}, number={10}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Phillips, J. C.}, year={2007}, pages={2989–2995} }
 @article{paesler_baker_lucovsky_edwards_taylor_2007, title={EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5}, volume={68}, ISSN={["1879-2553"]}, DOI={10.1016/j.jpcs.2007.03.041}, number={5-6}, journal={JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS}, author={Paesler, M. A. and Baker, D. A. and Lucovsky, G. and Edwards, A. E. and Taylor, P. C.}, year={2007}, pages={873–877} }
 @article{maeda_sakai_sakai_ikari_munzar_tonchev_kasap_lucovsky_2007, title={Effect of Ga on the structure of Ge-Se-Ga glasses from thermal analysis, Raman and XPS measurements}, volume={18}, journal={Journal of Materials Science. Materials in Electronics.}, author={Maeda, K. and Sakai, T. and Sakai, K. and Ikari, T. and Munzar, M. and Tonchev, D. and Kasap, S. O. and Lucovsky, G.}, year={2007}, pages={S367–370} }
 @article{lucovsky_baker_paesler_phillips_thorpe_2007, title={Intermediate phases in binary and ternary alloys. How far can we go with a semi-empirical bond-constraint theory?}, volume={9}, number={10}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Baker, D. A. and Paesler, M. A. and Phillips, J. C. and Thorpe, M. F.}, year={2007}, pages={2979–2988} }
 @article{lucovsky_phillips_2007, title={Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory}, volume={19}, number={45}, journal={Journal of Physics. Condensed Matter}, author={Lucovsky, G. and Phillips, J. C.}, year={2007} }
 @article{lucovsky_seo_lee_fleming_ulrich_luning_lysaght_bersuker_2007, title={Intrinsic electronically active defects in transition metal elemental oxides}, volume={46}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.46.1899}, number={4B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS}, author={Lucovsky, Gerald and Seo, Hyungtak and Lee, Sanghyun and Fleming, Leslie B. and Ulrich, Marc D. and Luning, Jan and Lysaght, Pat and Bersuker, Gennadi}, year={2007}, month={Apr}, pages={1899–1909} }
 @article{lucovsky_2007, title={Jahn-Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects}, volume={838}, ISSN={["1872-8014"]}, DOI={10.1016/j.molstruc.2007.01.010}, number={1-3}, journal={JOURNAL OF MOLECULAR STRUCTURE}, author={Lucovsky, Gerry}, year={2007}, month={Jul}, pages={187–192} }
 @article{seo_lucovsky_fleming_ulrich_luning_koster_geballe_2007, title={Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces}, volume={84}, ISSN={["0167-9317"]}, DOI={10.1016/j.mee.2007.04.069}, number={9-10}, journal={MICROELECTRONIC ENGINEERING}, author={Seo, H. and Lucovsky, G. and Fleming, L. B. and Ulrich, M. D. and Luning, J. and Koster, G. and Geballe, T. H.}, year={2007}, pages={2298–2301} }
 @article{baker_paesler_lucovsky_2007, title={Local bonding arrangements in amorphous Ge2Sb2Te5: the importance of Ge and Te bonding}, volume={18}, ISSN={["1573-482X"]}, DOI={10.1007/s10854-007-9233-5}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, author={Baker, D. A. and Paesler, M. A. and Lucovsky, G.}, year={2007}, month={Oct}, pages={S399–S403} }
 @article{lucovsky_whitten_2007, title={Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions}, volume={84}, ISSN={["0167-9317"]}, DOI={10.1016/j.mee.2007.04.073}, number={9-10}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G. and Whitten, J. L.}, year={2007}, pages={2259–2262} }
 @article{lucovsky_whitten_2007, title={Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces}, volume={601}, ISSN={["0039-6028"]}, DOI={10.1016/j.susc.2007.04.057}, number={18}, journal={SURFACE SCIENCE}, author={Lucovsky, G. and Whitten, J. L.}, year={2007}, month={Sep}, pages={4138–4143} }
 @article{siemons_koster_yamamoto_harrison_lucovsky_geballe_blank_beasley_2007, title={Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping}, volume={98}, ISSN={["0031-9007"]}, DOI={10.1103/physrevlett.98.196802}, number={19}, journal={PHYSICAL REVIEW LETTERS}, author={Siemons, Wolter and Koster, Gertjan and Yamamoto, Hideki and Harrison, Walter A. and Lucovsky, Gerald and Geballe, Theodore H. and Blank, Dave H. A. and Beasley, Malcolm R.}, year={2007}, month={May} }
 @article{lucovsky_baker_paesler_phillips_2007, title={Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices}, volume={353}, ISSN={["1873-4812"]}, DOI={10.1016/j.jnoncrysol.2007.01.041}, number={18-21}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G. and Baker, D. A. and Paesler, M. A. and Phillips, J. C.}, year={2007}, month={Jun}, pages={1713–1722} }
 @article{lucovsky_luening_fleming_ulrich_rowe_seo_lee_lysaght_bersuker_2007, title={Spectroscopic studies of O-vacancy defects in transition metal oxides}, volume={18}, ISSN={["1573-482X"]}, DOI={10.1007/s10854-007-9192-x}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, author={Lucovsky, G. and Luening, J. and Fleming, L. B. and Ulrich, M. D. and Rowe, J. E. and Seo, H. and Lee, S. and Lysaght, P. and Bersuker, G.}, year={2007}, month={Oct}, pages={S263–S266} }
 @article{lucovsky_seo_fleming_luening_lysaght_bersuker_2007, title={Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies}, volume={601}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2007.04.197}, number={18}, journal={SURFACE SCIENCE}, author={Lucovsky, G. and Seo, H. and Fleming, L. B. and Luening, J. and Lysaght, P. and Bersuker, G.}, year={2007}, month={Sep}, pages={4236–4241} }
 @article{chen_mamouni_zhou_schrimpf_fleetwood_galloway_lee_seo_lucovsky_jun_et al._2007, title={Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors}, volume={54}, ISSN={["0018-9499"]}, DOI={10.1109/TNS.2007.910862}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Chen, D. K. and Mamouni, E. E. and Zhou, X. J. and Schrimpf, R. D. and Fleetwood, D. M. and Galloway, K. F. and Lee, S. and Seo, H. and Lucovsky, G. and Jun, B. and et al.}, year={2007}, month={Dec}, pages={1931–1937} }
 @article{zeman_fulton_lucovsky_nemanich_yang_2006, title={"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)}, volume={99}, ISSN={["0021-8979"]}, DOI={10.1063/1.2201707}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Zeman, MC and Fulton, CC and Lucovsky, G and Nemanich, RJ and Yang, WC}, year={2006}, month={May} }
 @article{fulton_edge_lucovsky_luning_2006, title={A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy}, volume={75}, ISSN={["0969-806X"]}, DOI={10.1016/j.radphyschem.2005.07.045}, number={11}, journal={RADIATION PHYSICS AND CHEMISTRY}, author={Fulton, C. C. and Edge, L. F. and Lucovsky, G. and Luning, J.}, year={2006}, month={Nov}, pages={1934–1938} }
 @article{baker_paesler_lucovsky_agarwal_taylor_2006, title={Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5}, volume={96}, ISSN={["0031-9007"]}, DOI={10.1103/physrevlett.96.255501}, number={25}, journal={PHYSICAL REVIEW LETTERS}, author={Baker, DA and Paesler, MA and Lucovsky, G and Agarwal, SC and Taylor, PC}, year={2006}, month={Jun} }
 @article{lucovsky_2006, title={Band edge electronic structure of transition metal/rare earth oxide dielectrics}, volume={253}, ISSN={["1873-5584"]}, DOI={10.1016/j.apsusc.2006.06.001}, number={1}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, Gerald}, year={2006}, month={Oct}, pages={311–321} }
 @article{ulrich_rowe_keister_2006, title={Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy}, volume={24}, ISSN={["2166-2746"]}, DOI={10.1116/1.2218865}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Ulrich, M. D. and Rowe, J. E. and Keister, J. W.}, year={2006}, pages={2132–2137} }
 @article{edge_schlom_stemmer_lucovsky_luning_2006, title={Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides}, volume={75}, ISSN={["0969-806X"]}, DOI={10.1016/j.radphyschem.2006.05.005}, number={11}, journal={RADIATION PHYSICS AND CHEMISTRY}, author={Edge, L. F. and Schlom, D. G. and Stemmer, S. and Lucovsky, G. and Luning, J.}, year={2006}, month={Nov}, pages={1608–1612} }
 @article{lucovsky_fleetwood_lee_seo_schrimpf_felix_luning_fleming_ulrich_aspnes_2006, title={Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates}, volume={53}, ISSN={["1558-1578"]}, DOI={10.1109/TNS.2006.886211}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Lucovsky, G. and Fleetwood, D. M. and Lee, S. and Seo, H. and Schrimpf, R. D. and Felix, J. A. and Luning, J. and Fleming, L. B. and Ulrich, M. and Aspnes, D. E.}, year={2006}, month={Dec}, pages={3644–3648} }
 @article{baker_paesler_lucovsky_taylor_2006, title={EXAFS study of amorphous Ge2Sb2Te5}, volume={352}, ISSN={["1873-4812"]}, DOI={10.1016/j.jnoncrysol.2005.11.079}, number={9-20}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Baker, D. A. and Paesler, M. A. and Lucovsky, G. and Taylor, P. C.}, year={2006}, month={Jun}, pages={1621–1623} }
 @article{paesler_baker_lucovsky_edwards_taylor_2006, title={EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5}, volume={8}, number={6}, journal={Journal of Optoelectronics and Advanced Materials}, author={Paesler, M. A. and Baker, D. A. and Lucovsky, G. and Edwards, A. E. and Taylor, P. C.}, year={2006}, pages={2039–2043} }
 @article{fulton_lucovsky_nemanich_2006, title={Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure}, volume={99}, ISSN={["1089-7550"]}, DOI={10.1063/1.2181282}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Fulton, CC and Lucovsky, G and Nemanich, RJ}, year={2006}, month={Mar} }
 @article{lucovsky_seo_fleming_ulrich_luning_lysaght_bersuker_2006, title={Intrinsic bonding defects in transition metal elemental oxides}, volume={46}, ISSN={["0026-2714"]}, DOI={10.1016/j.microrel.2006.07.032}, number={9-11}, journal={MICROELECTRONICS RELIABILITY}, author={Lucovsky, G. and Seo, H. and Fleming, L. B. and Ulrich, M. D. and Luning, J. and Lysaght, P. and Bersuker, G.}, year={2006}, pages={1623–1628} }
 @article{lucovsky_hinkle_fulton_stoute_seo_luning_2006, title={Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2}, volume={75}, ISSN={["0969-806X"]}, DOI={10.1016/j.radphyschem.2005.07.062}, number={11}, journal={RADIATION PHYSICS AND CHEMISTRY}, author={Lucovsky, G. and Hinkle, C. L. and Fulton, C. C. and Stoute, N. A. and Seo, H. and Luning, J.}, year={2006}, month={Nov}, pages={2097–2101} }
 @article{lucovsky_phillips_2006, title={Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys}, volume={352}, ISSN={["0022-3093"]}, DOI={10.1016/j.jnoncrysol.2005.12.022}, number={9-20}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G. and Phillips, J. C.}, year={2006}, month={Jun}, pages={1534–1538} }
 @article{lucovsky_phillips_2006, title={Reduction of bonding constraints by self-organization in gate dielectrics for a-Si : H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)}, volume={352}, ISSN={["1873-4812"]}, DOI={10.1016/j.jnoncrysol.2005.11.130}, number={9-20}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G. and Phillips, J. C.}, year={2006}, month={Jun}, pages={1711–1714} }
 @article{lucovsky_phillips_2006, title={Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)}, volume={352}, ISSN={["1873-4812"]}, DOI={10.1016/j.jnoncrysol.2006.03.123}, number={42-49}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G. and Phillips, J. C.}, year={2006}, month={Nov}, pages={4509–4516} }
 @article{lucovsky_phillips_2006, title={Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95(th) birthday}, volume={8}, number={6}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G. and Phillips, J. C.}, year={2006}, pages={1969–1978} }
 @article{lucovsky_fulton_ju_stoute_tao_aspnes_luening_2006, title={Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3}, volume={75}, ISSN={["0969-806X"]}, DOI={10.1016/j.radphyschem.2006.05.004}, number={11}, journal={RADIATION PHYSICS AND CHEMISTRY}, author={Lucovsky, G. and Fulton, C. C. and Ju, B. S. and Stoute, N. A. and Tao, S. and Aspnes, D. E. and Luening, J.}, year={2006}, month={Nov}, pages={1591–1595} }
 @article{zeman_fulton_lucovsky_nemanich_yang_2006, title={Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy}, volume={99}, ISSN={["1089-7550"]}, DOI={10.1063/1.2163984}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Zeman, MC and Fulton, CC and Lucovsky, G and Nemanich, RJ and Yang, WC}, year={2006}, month={Jan} }
 @article{lucovsky_phillips_2005, title={Bond strain and defects at interfaces in high-k gate stacks}, volume={45}, ISSN={["0026-2714"]}, DOI={10.1016/j.microrel.2004.11.051}, number={5-6}, journal={MICROELECTRONICS RELIABILITY}, author={Lucovsky, G and Phillips, JC}, year={2005}, pages={770–778} }
 @article{lucovsky_hong_fulton_stoute_zou_nemanich_aspnes_ade_schlom_2005, title={Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra}, volume={45}, ISSN={["0026-2714"]}, DOI={10.1016/j.microrel.2004.11.038}, number={5-6}, journal={MICROELECTRONICS RELIABILITY}, author={Lucovsky, G and Hong, JG and Fulton, CC and Stoute, NA and Zou, Y and Nemanich, RJ and Aspnes, DE and Ade, H and Schlom, DG}, year={2005}, pages={827–830} }
 @article{lucovsky_fulton_zhang_luning_edge_whitten_nemanich_schlom_afanase'v_2005, title={Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings}, volume={486}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2004.11.233}, number={1-2}, journal={THIN SOLID FILMS}, author={Lucovsky, G and Fulton, CC and Zhang, Y and Luning, J and Edge, L and Whitten, JL and Nemanich, RJ and Schlom, DG and Afanase'v, VV}, year={2005}, month={Aug}, pages={129–135} }
 @article{lucovsky_fulton_zhang_zou_luning_edge_whitten_nemanich_ade_schlom_et al._2005, title={Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect}, volume={5}, ISSN={["1558-2574"]}, DOI={10.1109/TDMR.2005.845804}, number={1}, journal={IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY}, author={Lucovsky, G and Fulton, CC and Zhang, Y and Zou, Y and Luning, J and Edge, LF and Whitten, JL and Nemanich, RJ and Ade, H and Schlom, DG and et al.}, year={2005}, month={Mar}, pages={65–83} }
 @article{lucovsky_phillips_2005, title={Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures}, volume={486}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2004.11.224}, number={1-2}, journal={THIN SOLID FILMS}, author={Lucovsky, G and Phillips, JC}, year={2005}, month={Aug}, pages={200–204} }
 @article{lucovsky_zhang_fulton_zou_nemanich_ade_whitten_2005, title={Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations}, volume={144}, ISSN={["1873-2526"]}, DOI={10.1016/j.elspec.2005.01.251}, journal={JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA}, author={Lucovsky, G and Zhang, Y and Fulton, CC and Zou, Y and Nemanich, RJ and Ade, H and Whitten, JL}, year={2005}, month={Jun}, pages={917–919} }
 @article{lucovsky_zhang_luning_afanase'v_stesmans_zollner_triyoso_rogers_whitten_2005, title={Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics}, volume={80}, ISSN={["0167-9317"]}, DOI={10.1016/j.mee.2005.04.052}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Zhang, Y and Luning, J and Afanase'v, VV and Stesmans, A and Zollner, S and Triyoso, D and Rogers, BR and Whitten, JL}, year={2005}, month={Jun}, pages={110–113} }
 @article{lucovsky_2005, title={Non-crystalline oxides and chalcogenides: A new paradigm based on ab initio quantum chemistry calculations for short range order and properties, and bond-constraint theory for network connectivity, network disruption and chemical phase separation}, volume={7}, number={4}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G.}, year={2005}, pages={1691–1706} }
 @article{boolchand_lucovsky_phillips_thorpe_2005, title={Self-organization and the physics of glassy networks}, volume={85}, ISSN={["1478-6443"]}, DOI={10.1080/14786430500256425}, number={32}, journal={PHILOSOPHICAL MAGAZINE}, author={Boolchand, P and Lucovsky, G and Phillips, JC and Thorpe, MF}, year={2005}, month={Nov}, pages={3823–3838} }
 @article{fulton_lucovsky_zhang_zou_nemanich_ade_whitten_2005, title={Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides}, volume={144}, ISSN={["1873-2526"]}, DOI={10.1016/j.elspec.2005.01.098}, journal={JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA}, author={Fulton, CC and Lucovsky, G and Zhang, Y and Zou, Y and Nemanich, RJ and Ade, H and Whitten, JL}, year={2005}, month={Jun}, pages={913–916} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices}, volume={72}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2003.12.047}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Hinkle, CL and Fulton, C and Nemanich, RJ and Lucovsky, G}, year={2004}, month={Apr}, pages={257–262} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys}, volume={566}, ISSN={["0039-6028"]}, DOI={10.1016/j.susc.2004.06.010}, journal={SURFACE SCIENCE}, author={Lucovsky, G and Rayner, GB and Kang, D and Hinkle, CL and Hong, JG}, year={2004}, month={Sep}, pages={772–776} }
 @article{lucovsky_rayner_kang_hinkle_hong_2004, title={A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys}, volume={234}, ISSN={["0169-4332"]}, DOI={10.1016/j.apsusc.2004.05.075}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Rayner, GB and Kang, D and Hinkle, CL and Hong, JG}, year={2004}, month={Jul}, pages={429–433} }
 @article{mowrer_lucovsky_sremaniak_whitten_2004, title={Ab initio theory calculations of the electronic structure of nc-AS(2)S(3) and GeS2: an intrinsic mechanism for reversible photo-darkening}, volume={338-40}, DOI={10.1016/j.jnocrysol.2004.03.038}, number={Jun 15 2004}, journal={Journal of Non-crystalline Solids}, author={Mowrer, T. and Lucovsky, G. and Sremaniak, L. S. and Whitten, Jerry}, year={2004}, pages={543–547} }
 @article{afanas'ev_stesmans_zhao_caymax_heeg_schubert_jia_schlom_lucovsky_2004, title={Band alignment between (100)Si and complex rare earth/transition metal oxides}, volume={85}, ISSN={["1077-3118"]}, DOI={10.1063/1.1829781}, number={24}, journal={APPLIED PHYSICS LETTERS}, author={Afanas'ev, VV and Stesmans, A and Zhao, C and Caymax, M and Heeg, T and Schubert, J and Jia, Y and Schlom, DG and Lucovsky, G}, year={2004}, month={Dec}, pages={5917–5919} }
 @article{lucovsky_phillips_2004, title={Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks}, volume={16}, ISSN={["1361-648X"]}, DOI={10.1088/0953-8984/16/44/011}, number={44}, journal={JOURNAL OF PHYSICS-CONDENSED MATTER}, author={Lucovsky, G and Phillips, JC}, year={2004}, month={Nov}, pages={S5139–S5151} }
 @article{lee_wu_lucovsky_2004, title={Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress}, volume={44}, ISSN={["0026-2714"]}, DOI={10.1016/j.microrel.2003.07.002}, number={2}, journal={MICROELECTRONICS RELIABILITY}, author={Lee, YM and Wu, YD and Lucovsky, G}, year={2004}, month={Feb}, pages={207–212} }
 @article{rayner_kang_hinkle_hong_lucovsky_2004, title={Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity}, volume={72}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2004.01.008}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Rayner, GB and Kang, D and Hinkle, CL and Hong, JG and Lucovsky, G}, year={2004}, month={Apr}, pages={304–309} }
 @article{rayner_kang_lucovsky_2004, title={Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity}, volume={338}, ISSN={["1873-4812"]}, DOI={10.1016/j.jnoncrysol.2004.02.042}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Rayner, GB and Kang, D and Lucovsky, G}, year={2004}, month={Jun}, pages={151–154} }
 @article{bae_krug_lucovsky_2004, title={Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1806439}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Krug, C and Lucovsky, G}, year={2004}, pages={2379–2383} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers}, volume={566}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2004.06.084}, journal={SURFACE SCIENCE}, author={Hinkle, CL and Fulton, C and Nemanich, RJ and Lucovsky, G}, year={2004}, month={Sep}, pages={1185–1189} }
 @article{hinkle_fulton_nemanich_lucovsky_2004, title={Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers}, volume={234}, DOI={10.1016/j.apsusc.2004-05.076}, number={37990}, journal={Applied Surface Science}, author={Hinkle, C. L. and Fulton, C. and Nemanich, R. J. and Lucovsky, G.}, year={2004}, pages={240–245} }
 @article{fulton_cook_lucovsky_nemanich_2004, title={Interface instabilities and electronic properties of ZrO2 on silicon (100)}, volume={96}, ISSN={["1089-7550"]}, DOI={10.1063/1.1776313}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Fulton, CC and Cook, TE and Lucovsky, G and Nemanich, RJ}, year={2004}, month={Sep}, pages={2665–2673} }
 @article{lucovsky_phillips_2004, title={Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface}, volume={22}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Phillips, J. C.}, year={2004}, pages={2087–2096} }
 @article{lucovsky_maria_phillips_2004, title={Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics}, volume={22}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Maria, J. P. and Phillips, J. C.}, year={2004}, pages={2097–2104} }
 @article{lucovsky_mowrer_sremaniak_whitten_2004, title={Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations}, volume={338}, ISSN={["0022-3093"]}, DOI={10.1016/j.jnoncrysol.2004.02.043}, number={Jun 15 2004}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G and Mowrer, T and Sremaniak, LS and Whitten, JL}, year={2004}, month={Jun}, pages={155–158} }
 @article{bae_lucovsky_2004, title={Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1807396}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Lucovsky, G}, year={2004}, pages={2402–2410} }
 @article{bae_lucovsky_2004, title={Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1807411}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Lucovsky, G}, year={2004}, pages={2411–2418} }
 @misc{lucovsky_2004, title={Methods of forming binary noncrystalline oxide analogs of silicon dioxide}, volume={6,686,264}, number={2004 Feb. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Lucovsky, G.}, year={2004} }
 @article{lucovsky_phillips_2004, title={Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces}, volume={78}, ISSN={["1432-0630"]}, DOI={10.1007/s00339-003-2403-2}, number={4}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, author={Lucovsky, G and Phillips, JC}, year={2004}, month={Mar}, pages={453–459} }
 @article{soares_bastos_pezzi_miotti_driemeier_baumvol_hinkle_lucovsky_2004, title={Nitrogen bonding, stability, and transport in AlON films on Si}, volume={84}, ISSN={["0003-6951"]}, DOI={10.1063/1.1763230}, number={24}, journal={APPLIED PHYSICS LETTERS}, author={Soares, GV and Bastos, KP and Pezzi, RP and Miotti, L and Driemeier, C and Baumvol, IJR and Hinkle, C and Lucovsky, G}, year={2004}, month={Jun}, pages={4992–4994} }
 @misc{lucovsky_parsons_2004, title={Non-crystalline oxides for use in microelectronic, optical, and other applications}, volume={6,787,861}, number={2004 Sept. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Lucovsky, G. and Parsons, G. N.}, year={2004} }
 @article{fulton_lucovsky_nemanich_2004, title={Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)}, volume={84}, ISSN={["1077-3118"]}, DOI={10.1063/1.1639944}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Fulton, CC and Lucovsky, G and Nemanich, RJ}, year={2004}, month={Jan}, pages={580–582} }
 @article{bae_lucovsky_2004, title={Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices}, volume={566}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2004.05.072}, journal={SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2004}, month={Sep}, pages={356–360} }
 @article{bae_lucovsky_2004, title={Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices}, volume={72}, ISSN={["1873-5568"]}, DOI={10.1016/j.mee.2003.12.043}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Bae, C and Lucovsky, G}, year={2004}, month={Apr}, pages={236–240} }
 @article{bae_lucovsky_2004, title={Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices}, volume={234}, ISSN={["1873-5584"]}, DOI={10.1016/j.apsusc.2004.05.077}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2004}, month={Jul}, pages={475–479} }
 @misc{lucovsky_niimi_2004, title={Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions}, volume={16}, ISSN={["1361-648X"]}, DOI={10.1088/0953-8984/16/17/018}, number={17}, journal={JOURNAL OF PHYSICS-CONDENSED MATTER}, author={Lucovsky, G and Niimi, H}, year={2004}, month={May}, pages={S1815–S1837} }
 @article{lucovsky_zhang_whitten_schlom_freeouf_2004, title={Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides}, volume={72}, ISSN={["0167-9317"]}, DOI={10.1016/j.mee.2004.01.006}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Zhang, Y and Whitten, JL and Schlom, DG and Freeouf, JL}, year={2004}, month={Apr}, pages={288–293} }
 @article{krug_lucovsky_2004, title={Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1755714}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Krug, C and Lucovsky, G}, year={2004}, pages={1301–1308} }
 @article{lucovsky_hong_fulton_zou_nemanich_ade_scholm_freeouf_2004, title={Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides}, volume={241}, ISSN={["1521-3951"]}, DOI={10.1002/pssb.200404938}, number={10}, journal={PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS}, author={Lucovsky, G and Hong, JG and Fulton, CC and Zou, Y and Nemanich, RJ and Ade, H and Scholm, DG and Freeouf, JL}, year={2004}, month={Aug}, pages={2221–2235} }
 @article{lucovsky_zhang_whitten_schlom_freeouf_2004, title={Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides}, volume={21}, ISSN={["1386-9477"]}, DOI={10.1016/j.physe.2003.11.111}, number={2-4}, journal={PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES}, author={Lucovsky, G and Zhang, Y and Whitten, JL and Schlom, DG and Freeouf, JL}, year={2004}, month={Mar}, pages={712–716} }
 @article{edge_schlom_brewer_chabal_williams_chambers_hinkle_lucovsky_yang_stemmer_et al._2004, title={Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon}, volume={84}, ISSN={["1077-3118"]}, DOI={10.1063/1.1759065}, number={23}, journal={APPLIED PHYSICS LETTERS}, author={Edge, LF and Schlom, DG and Brewer, RT and Chabal, YJ and Williams, JR and Chambers, SA and Hinkle, C and Lucovsky, G and Yang, Y and Stemmer, S and et al.}, year={2004}, month={Jun}, pages={4629–4631} }
 @article{bae_krug_lucovsky_chakraborty_mishra_2004, title={Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films}, volume={96}, ISSN={["1089-7550"]}, DOI={10.1063/1.1772884}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bae, C and Krug, C and Lucovsky, G and Chakraborty, A and Mishra, U}, year={2004}, month={Sep}, pages={2674–2680} }
 @article{bastos_pezzi_miotti_soares_driemeier_morais_baumvol_hinkle_lucovsky_2004, title={Thermal stability of plasma-nitrided aluminum oxide films on Si}, volume={84}, ISSN={["1077-3118"]}, DOI={10.1063/1.1638629}, number={1}, journal={APPLIED PHYSICS LETTERS}, author={Bastos, KP and Pezzi, RP and Miotti, L and Soares, GV and Driemeier, C and Morais, J and Baumvol, IJR and Hinkle, C and Lucovsky, G}, year={2004}, month={Jan}, pages={97–99} }
 @article{bae_krug_lucovsky_chakraborty_mishra_2004, title={Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures}, volume={84}, DOI={10.1063/1.1767599}, number={26}, journal={Applied Physics Letters}, author={Bae, C. and Krug, C. and Lucovsky, G. and Chakraborty, A. and Mishra, U.}, year={2004}, pages={5413–5415} }
 @article{lucovsky_hong_fulton_zou_nemanich_ade_2004, title={X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions}, volume={22}, ISSN={["2166-2746"]}, DOI={10.1116/1.1771670}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Lucovsky, G and Hong, JG and Fulton, CC and Zou, Y and Nemanich, RJ and Ade, H}, year={2004}, pages={2132–2138} }
 @article{lucovsky_sremaniak_mowrer_whitten_2003, title={A  new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials}, volume={326}, number={2003 Oct 1}, journal={Journal of Non-crystalline Solids}, author={Lucovsky, G. and Sremaniak, L. S. and Mowrer, T. and Whitten, J. L.}, year={2003}, pages={14-} }
 @article{lucovsky_rubloff_2003, title={American Vacuum Society leadership in electronic materials processing: Past, present, and future}, volume={21}, ISSN={["1520-8559"]}, DOI={10.1116/1.1599866}, number={5}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G and Rubloff, G}, year={2003}, pages={S175–S181} }
 @article{lucovsky_rayner_zhang_appel_whitten_2003, title={Band offset energies in zirconium silicate Si alloys}, volume={216}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00429-X}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Rayner, B and Zhang, Y and Appel, G and Whitten, J}, year={2003}, month={Jun}, pages={215–222} }
 @article{cook_fulton_mecouch_davis_lucovsky_nemanich_2003, title={Band offset measurements of the GaN (0001)/HfO2 interface}, volume={94}, DOI={10.1063/1.1618374}, number={11}, journal={Journal of Applied Physics}, author={Cook, T. E. and Fulton, C. C. and Mecouch, W. J. and Davis, R. F. and Lucovsky, G. and Nemanich, R. J.}, year={2003}, pages={7155–7158} }
 @article{cook_fulton_mecouch_davis_lucovsky_nemanich_2003, title={Band offset measurements of the Si3N4/GaN (0001) interface}, volume={94}, ISSN={["0021-8979"]}, DOI={10.1063/1.1601314}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Cook, TE and Fulton, CC and Mecouch, WJ and Davis, RF and Lucovsky, G and Nemanich, RJ}, year={2003}, month={Sep}, pages={3949–3954} }
 @misc{lucovsky_2003, title={Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics}, volume={6,552,403}, number={2003 Apr. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Lucovsky, G.}, year={2003} }
 @article{sremaniak_whitten_menon_lucovsky_2003, title={Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions}, volume={212}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00087-4}, number={2003 May 15}, journal={APPLIED SURFACE SCIENCE}, author={Sremaniak, LS and Whitten, JL and Menon, M and Lucovsky, G}, year={2003}, month={May}, pages={839–843} }
 @article{bae_rayner_lucovsky_2003, title={Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing}, volume={216}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(03)00497-5}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Bae, C and Rayner, GB and Lucovsky, G}, year={2003}, month={Jun}, pages={119–123} }
 @article{lucovsky_raynor_zhang_fulton_nemanich_appel_ade_whitten_2003, title={Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices}, volume={212}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00055-2}, number={2003 May 15}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Raynor, GB and Zhang, Y and Fulton, CC and Nemanich, RJ and Appel, G and Ade, H and Whitten, JL}, year={2003}, month={May}, pages={563–569} }
 @article{lucovsky_2003, title={Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects}, volume={43}, ISSN={["0026-2714"]}, DOI={10.1016/S0026-2714(03)00253-1}, number={9-11}, journal={MICROELECTRONICS RELIABILITY}, author={Lucovsky, G}, year={2003}, pages={1417–1426} }
 @article{bae_lucovsky_2003, title={Low temperature semiconductor surface passivation for nanoelectronic device applications}, volume={532}, ISSN={["0039-6028"]}, DOI={10.1016/S0039-6028(03)00181-X}, journal={SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2003}, month={Jun}, pages={759–763} }
 @article{cook_fulton_mecouch_tracy_davis_hurt_lucovsky_nemanich_2003, title={Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)}, volume={93}, ISSN={["0021-8979"]}, DOI={10.1063/1.1559424}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Cook, TE and Fulton, CC and Mecouch, WJ and Tracy, KM and Davis, RF and Hurt, EH and Lucovsky, G and Nemanich, RJ}, year={2003}, month={Apr}, pages={3995–4004} }
 @article{bae_lucovsky_2003, title={Oxide formation and passivation for micro- and nano-electronic devices}, volume={212}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00139-9}, journal={APPLIED SURFACE SCIENCE}, author={Bae, C and Lucovsky, G}, year={2003}, month={May}, pages={644–648} }
 @article{hinkle_lucovsky_2003, title={Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3}, volume={216}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(03)00499-9}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Hinkle, C and Lucovsky, G}, year={2003}, month={Jun}, pages={124–132} }
 @article{ulrich_hong_rowe_lucovsky_chan_madey_2003, title={Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures}, volume={21}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Chan, A. S. Y. and Madey, T. E.}, year={2003}, pages={1777–1782} }
 @article{rayner_kang_lucovsky_2003, title={Spectroscopic study of chemical phase separation in zirconium silicate alloys}, volume={21}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Rayner, G. B. and Kang, D. and Lucovsky, G.}, year={2003}, pages={1783–1791} }
 @article{lee_wu_bae_hong_lucovsky_2003, title={Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress}, volume={47}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(02)00257-5}, number={1}, journal={SOLID-STATE ELECTRONICS}, author={Lee, YM and Wu, YD and Bae, C and Hong, JG and Lucovsky, G}, year={2003}, month={Jan}, pages={71–76} }
 @article{lucovsky_whitten_zhang_2002, title={A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys}, volume={190}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(01)00835-2}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Whitten, JL and Zhang, Y}, year={2002}, month={May}, pages={48–55} }
 @article{lucovsky_whitten_zhang_2002, title={A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys}, volume={46}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(02)00160-0}, number={11}, journal={SOLID-STATE ELECTRONICS}, author={Lucovsky, G and Whitten, JL and Zhang, Y}, year={2002}, month={Nov}, pages={1687–1697} }
 @article{lucovsky_2002, title={Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides}, volume={299}, ISSN={["1873-4812"]}, DOI={10.1016/S0022-3093(01)01162-0}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G}, year={2002}, month={Apr}, pages={231–237} }
 @article{glinka_wang_singh_marka_rashkeev_shirokaya_albridge_pantelides_tolk_lucovsky_2002, title={Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation}, volume={65}, number={19}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Glinka, Y. D. and Wang, W. and Singh, S. K. and Marka, Z. and Rashkeev, S. N. and Shirokaya, Y. and Albridge, R. and Pantelides, S. T. and Tolk, N. H. and Lucovsky, G.}, year={2002}, pages={193103–1} }
 @article{lucovsky_2002, title={Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices}, volume={303}, ISSN={["1873-4812"]}, DOI={10.1016/S0022-3093(02)00962-6}, number={1}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G}, year={2002}, month={May}, pages={40–49} }
 @article{lim_kriventsov_jackson_haeni_schlom_balbashov_uecker_reiche_freeouf_lucovsky_2002, title={Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry}, volume={91}, ISSN={["1089-7550"]}, DOI={10.1063/1.1456246}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Lim, SG and Kriventsov, S and Jackson, TN and Haeni, JH and Schlom, DG and Balbashov, AM and Uecker, R and Reiche, P and Freeouf, JL and Lucovsky, G}, year={2002}, month={Apr}, pages={4500–4505} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices}, volume={46}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(02)00152-1}, number={11}, journal={SOLID-STATE ELECTRONICS}, author={Johnson, RS and Hong, JG and Hinkle, C and Lucovsky, G}, year={2002}, month={Nov}, pages={1799–1805} }
 @article{johnson_hong_hinkle_lucovsky_2002, title={Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications}, volume={20}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Johnson, R. S. and Hong, J. G. and Hinkle, C. and Lucovsky, G.}, year={2002}, pages={1126–1131} }
 @article{fulton_lucovsky_nemanich_2002, title={Electronic states at the interface of Ti-Si oxide on Si(100)}, volume={20}, ISSN={["1071-1023"]}, DOI={10.1116/1.1493785}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Fulton, CC and Lucovsky, G and Nemanich, RJ}, year={2002}, pages={1726–1731} }
 @article{whitten_zhang_menon_lucovsky_2002, title={Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Whitten, J. L. and Zhang, Y. and Menon, M. and Lucovsky, G.}, year={2002}, pages={1710–1719} }
 @article{lucovsky_zhang_rayner_appel_ade_whitten_2002, title={Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Zhang, Y. and Rayner, G. B. and Appel, G. and Ade, H. and Whitten, J. L.}, year={2002}, pages={1739–1747} }
 @article{johnson_lucovsky_hong_2002, title={Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys}, volume={190}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(01)00889-3}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Johnson, RS and Lucovsky, G and Hong, JG}, year={2002}, month={May}, pages={43–47} }
 @article{ulrich_johnson_hong_rowe_lucovsky_quinton_madey_2002, title={Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Johnson, R. S. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Quinton, J. S. and Madey, T. E.}, year={2002}, pages={1732–1738} }
 @article{misra_lucovsky_parsons_2002, title={Issues in high-kappa gate stack interfaces}, volume={27}, ISSN={["1938-1425"]}, DOI={10.1557/mrs2002.73}, number={3}, journal={MRS BULLETIN}, author={Misra, V and Lucovsky, G and Parsons, GN}, year={2002}, month={Mar}, pages={212–216} }
 @article{choi_fleetwood_schrimpf_massengill_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2002, title={Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation}, volume={49}, ISSN={["1558-1578"]}, DOI={10.1109/TNS.2002.805389}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Choi, BK and Fleetwood, DM and Schrimpf, RD and Massengill, LW and Galloway, KF and Shaneyfelt, MR and Meisenheimer, TL and Dodd, PE and Schwank, JR and Lee, YM and et al.}, year={2002}, month={Dec}, pages={3045–3050} }
 @article{khandelwal_niimi_lucovsky_lamb_2002, title={Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films}, volume={20}, ISSN={["0734-2101"]}, DOI={10.1116/1.1513635}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Khandelwal, A and Niimi, H and Lucovsky, G and Lamb, HH}, year={2002}, pages={1989–1996} }
 @article{rayner_kang_zhang_lucovsky_2002, title={Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1493788}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Rayner, GB and Kang, D and Zhang, Y and Lucovsky, G}, year={2002}, pages={1748–1758} }
 @article{boehme_lucovsky_2002, title={Origins of silicon solar cell passivation by SiNx : H anneal}, volume={299}, ISSN={["0022-3093"]}, DOI={10.1016/S0022-3093(01)01135-8}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Boehme, C and Lucovsky, G}, year={2002}, month={Apr}, pages={1157–1161} }
 @article{niimi_khandelwal_lamb_lucovsky_2002, title={Reaction pathways in remote plasma nitridation of ultrathin SiO2 films}, volume={91}, ISSN={["1089-7550"]}, DOI={10.1063/1.1419208}, number={1}, journal={JOURNAL OF APPLIED PHYSICS}, author={Niimi, H and Khandelwal, A and Lamb, HH and Lucovsky, G}, year={2002}, month={Jan}, pages={48–55} }
 @article{choi_fleetwood_massengill_schrimpf_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2002, title={Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation}, volume={38}, DOI={10.1049/el:20020119}, number={4}, journal={Electronics Letters}, author={Choi, B. K. and Fleetwood, D. M. and Massengill, L. W. and Schrimpf, R. D. and Galloway, K. F. and Shaneyfelt, M. R. and Meisenheimer, T. L. and Dodd, P. E. and Schwank, J. R. and Lee, Y. M. and et al.}, year={2002}, pages={157–158} }
 @article{wang_powell_johnson_lucovsky_aspnes_2002, title={Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1493783}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Wang, JFT and Powell, GD and Johnson, RS and Lucovsky, G and Aspnes, DE}, year={2002}, pages={1699–1705} }
 @article{felix_fleetwood_schrimpf_hong_lucovsky_schwank_shaneyfelt_2002, title={Total-dose radiation response of hafnium-silicate capacitors}, volume={49}, ISSN={["1558-1578"]}, DOI={10.1109/TNS.2002.805392}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Felix, JA and Fleetwood, DM and Schrimpf, RD and Hong, JG and Lucovsky, G and Schwank, JR and Shaneyfelt, MR}, year={2002}, month={Dec}, pages={3191–3196} }
 @article{osburn_kim_han_de_yee_gannavaram_lee_lee_luo_zhu_et al._2002, title={Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?}, volume={46}, ISSN={["2151-8556"]}, DOI={10.1147/rd.462.0299}, number={2-3}, journal={IBM JOURNAL OF RESEARCH AND DEVELOPMENT}, author={Osburn, CM and Kim, I and Han, SK and De, I and Yee, KF and Gannavaram, S and Lee, SJ and Lee, CH and Luo, ZJ and Zhu, W and et al.}, year={2002}, pages={299–315} }
 @article{fan_nieh_lee_lucovsky_brown_register_banerjee_2002, title={Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor}, volume={49}, ISSN={["1557-9646"]}, DOI={10.1109/TED.2002.804713}, number={11}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Fan, YY and Nieh, RE and Lee, JC and Lucovsky, G and Brown, GA and Register, LF and Banerjee, SK}, year={2002}, month={Nov}, pages={1969–1978} }
 @article{lucovsky_whitten_zhang_2001, title={A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys}, volume={59}, ISSN={["1873-5568"]}, DOI={10.1016/S0167-9317(01)00653-0}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Whitten, JL and Zhang, Y}, year={2001}, month={Nov}, pages={329–334} }
 @article{lazar_misra_johnson_lucovsky_2001, title={Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices}, volume={79}, ISSN={["1077-3118"]}, DOI={10.1063/1.1392973}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Lazar, HR and Misra, V and Johnson, RS and Lucovsky, G}, year={2001}, month={Aug}, pages={973–975} }
 @article{lucovsky_rayner_johnson_2001, title={Chemical and physical limits on the performance of metal silicate high-k gate dielectrics}, volume={41}, ISSN={["0026-2714"]}, DOI={10.1016/S0026-2714(01)00046-4}, number={7}, journal={MICROELECTRONICS RELIABILITY}, author={Lucovsky, G and Rayner, GB and Johnson, RS}, year={2001}, month={Jul}, pages={937–945} }
 @article{boehme_lucovsky_2001, title={Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride}, volume={19}, ISSN={["0734-2101"]}, DOI={10.1116/1.1398538}, number={5}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Boehme, C and Lucovsky, G}, year={2001}, pages={2622–2628} }
 @article{johnson_hong_lucovsky_2001, title={Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys}, volume={19}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Johnson, R. S. and Hong, J. G. and Lucovsky, G.}, year={2001}, pages={1606–1610} }
 @article{lucovsky_rayner_kang_appel_johnson_zhang_sayers_ade_whitten_2001, title={Electronic structure of noncrystalline transition metal silicate and aluminate alloys}, volume={79}, ISSN={["0003-6951"]}, DOI={10.1063/1.1404997}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Lucovsky, G and Rayner, GB and Kang, D and Appel, G and Johnson, RS and Zhang, Y and Sayers, DE and Ade, H and Whitten, JL}, year={2001}, month={Sep}, pages={1775–1777} }
 @article{lucovsky_2001, title={Electronic structure, amorphous morphology and thermal stability of transition metal oxide and chalcogenide alloys}, volume={3}, number={2}, journal={Journal of Optoelectronics and Advanced Materials}, author={Lucovsky, G.}, year={2001}, pages={155–166} }
 @article{johnson_lucovsky_hong_2001, title={Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys}, volume={59}, ISSN={["1873-5568"]}, DOI={10.1016/S0167-9317(01)00673-6}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Johnson, RS and Lucovsky, G and Hong, JG}, year={2001}, month={Nov}, pages={385–391} }
 @article{massengill_choi_fleetwood_schrimpf_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2001, title={Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics}, volume={48}, ISSN={["1558-1578"]}, DOI={10.1109/23.983149}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={Massengill, LW and Choi, BK and Fleetwood, DM and Schrimpf, RD and Galloway, KF and Shaneyfelt, MR and Meisenheimer, TL and Dodd, PE and Schwank, JR and Lee, YM and et al.}, year={2001}, month={Dec}, pages={1904–1912} }
 @article{johnson_lucovsky_baumvol_2001, title={Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition}, volume={19}, ISSN={["1520-8559"]}, DOI={10.1116/1.1379316}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Johnson, RS and Lucovsky, G and Baumvol, I}, year={2001}, pages={1353–1360} }
 @article{lucovsky_2001, title={Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity}, volume={19}, ISSN={["1520-8559"]}, DOI={10.1116/1.1379317}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G}, year={2001}, pages={1553–1561} }
 @article{wu_lee_lucovsky_2000, title={1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process}, volume={21}, ISSN={["1558-0563"]}, DOI={10.1109/55.823574}, number={3}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Wu, YD and Lee, YM and Lucovsky, G}, year={2000}, month={Mar}, pages={116–118} }
 @article{lucovsky_phillips_2000, title={Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs)}, volume={266}, number={2000 May}, journal={Journal of Non-crystalline Solids}, author={Lucovsky, G. and Phillips, J. C.}, year={2000}, pages={1335–1339} }
 @article{niimi_yang_lucovsky_keister_rowe_2000, title={Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces}, volume={166}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(00)00480-3}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Niimi, H and Yang, HY and Lucovsky, G and Keister, JW and Rowe, JE}, year={2000}, month={Oct}, pages={485–491} }
 @article{therrien_lucovsky_davis_2000, title={Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces}, volume={166}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(00)00485-2}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Therrien, R and Lucovsky, G and Davis, R}, year={2000}, month={Oct}, pages={513–519} }
 @article{brillson_young_white_schafer_niimi_lee_lucovsky_2000, title={Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces}, volume={18}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Brillson, L. J. and Young, A. P. and White, B. D. and Schafer, J. and Niimi, H. and Lee, Y. M. and Lucovsky, G.}, year={2000}, pages={1737–1741} }
 @article{wolfe_lucovsky_2000, title={Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing}, volume={266}, number={2000 May}, journal={Journal of Non-crystalline Solids}, author={Wolfe, D. M. and Lucovsky, G.}, year={2000}, pages={1009–1014} }
 @article{boehme_lucovsky_2000, title={H loss mechanism during anneal of silicon nitride: Chemical dissociation}, volume={88}, ISSN={["0021-8979"]}, DOI={10.1063/1.1321730}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Boehme, C and Lucovsky, G}, year={2000}, month={Nov}, pages={6055–6059} }
 @article{lucovsky_niimi_wu_yang_2000, title={Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces}, volume={159}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(00)00071-4}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Niimi, H and Wu, Y and Yang, H}, year={2000}, month={Jun}, pages={50–61} }
 @article{lucovsky_yang_niimi_keister_rowe_thorpe_phillips_2000, title={Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics}, volume={18}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Niimi, H. and Keister, J. W. and Rowe, J. E. and Thorpe, M. F. and Phillips, J. C.}, year={2000}, pages={1742–1748} }
 @article{lucovsky_yang_niimi_thorpe_phillips_2000, title={Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics}, volume={18}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Niimi, H. and Thorpe, M. F. and Phillips, J. C.}, year={2000}, pages={2179–2186} }
 @article{lucovsky_phillips_2000, title={Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces}, volume={166}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(00)00482-7}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Phillips, JC}, year={2000}, month={Oct}, pages={497–503} }
 @article{white_brillson_lee_fleetwood_schrimpf_pantelides_lee_lucovsky_2000, title={Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation}, volume={47}, ISSN={["1558-1578"]}, DOI={10.1109/23.903765}, number={6}, journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE}, author={White, BD and Brillson, LJ and Lee, SC and Fleetwood, DM and Schrimpf, RD and Pantelides, ST and Lee, YM and Lucovsky, G}, year={2000}, month={Dec}, pages={2276–2280} }
 @article{lucovsky_rayner_2000, title={Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys}, volume={77}, ISSN={["0003-6951"]}, DOI={10.1063/1.1320860}, number={18}, journal={APPLIED PHYSICS LETTERS}, author={Lucovsky, G and Rayner, GB}, year={2000}, month={Oct}, pages={2912–2914} }
 @article{johnson_niimi_lucovsky_2000, title={New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing}, volume={18}, ISSN={["0734-2101"]}, DOI={10.1116/1.582331}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Johnson, RS and Niimi, H and Lucovsky, G}, year={2000}, pages={1230–1233} }
 @article{lucovsky_yang_wu_niimi_2000, title={Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics}, volume={374}, ISSN={["1879-2731"]}, DOI={10.1016/S0040-6090(00)01153-6}, number={2}, journal={THIN SOLID FILMS}, author={Lucovsky, G and Yang, HY and Wu, Y and Niimi, H}, year={2000}, month={Oct}, pages={217–227} }
 @article{lucovsky_wu_niimi_yang_keister_rowe_2000, title={Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness}, volume={18}, ISSN={["0734-2101"]}, DOI={10.1116/1.582318}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G and Wu, Y and Niimi, H and Yang, H and Keister, J and Rowe, JE}, year={2000}, pages={1163–1168} }
 @article{yang_niimi_keister_lucovsky_2000, title={The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices}, volume={21}, ISSN={["0741-3106"]}, DOI={10.1109/55.821673}, number={2}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Yang, H and Niimi, H and Keister, JW and Lucovsky, G}, year={2000}, month={Feb}, pages={76–78} }
 @article{wu_lucovsky_lee_2000, title={The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing}, volume={47}, ISSN={["1557-9646"]}, DOI={10.1109/16.848278}, number={7}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Wu, Y and Lucovsky, G and Lee, YM}, year={2000}, month={Jul}, pages={1361–1369} }
 @article{wu_xiang_yang_lucovsky_lin_2000, title={Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides}, volume={40}, ISSN={["0026-2714"]}, DOI={10.1016/s0026-2714(00)00103-7}, number={12}, journal={MICROELECTRONICS RELIABILITY}, author={Wu, YD and Xiang, Q and Yang, JYM and Lucovsky, G and Lin, MR}, year={2000}, month={Dec}, pages={1987–1995} }
 @article{keister_rowe_kolodziej_niimi_madey_lucovsky_1999, title={Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Keister, J. W. and Rowe, J. E. and Kolodziej, J. J. and Niimi, H. and Madey, T. E. and Lucovsky, G.}, year={1999}, pages={1831–1835} }
 @article{lucovsky_wu_niimi_misra_phillips_1999, title={Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Wu, Y. and Niimi, H. and Misra, V. and Phillips, J. C.}, year={1999}, pages={1806–1812} }
 @article{lucovsky_wu_niimi_misra_phillips_1999, title={Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics}, volume={74}, ISSN={["1077-3118"]}, DOI={10.1063/1.123728}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Lucovsky, G and Wu, Y and Niimi, H and Misra, V and Phillips, JC}, year={1999}, month={Apr}, pages={2005–2007} }
 @article{young_bandhu_schafer_niimi_lucovsky_1999, title={Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces}, volume={17}, ISSN={["0734-2101"]}, DOI={10.1116/1.581806}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Young, AP and Bandhu, R and Schafer, J and Niimi, H and Lucovsky, G}, year={1999}, pages={1258–1262} }
 @article{therrien_niimi_gehrke_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00394-9}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Therrien, R and Niimi, H and Gehrke, T and Lucovsky, G and Davis, R}, year={1999}, month={Sep}, pages={303–306} }
 @article{therrien_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={176}, ISSN={["0031-8965"]}, DOI={10.1002/(sici)1521-396x(199911)176:1<793::aid-pssa793>3.0.co;2-v}, number={1}, journal={PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}, author={Therrien, R and Lucovsky, G and Davis, RF}, year={1999}, month={Nov}, pages={793–796} }
 @article{wu_lucovsky_1999, title={Improvement of gate dielectric reliability for p plus poly MOS devices using remote PECVD top nitride deposition ultra-thin (2.4-6 nm) gate oxides}, volume={39}, ISSN={["0026-2714"]}, DOI={10.1016/S0026-2714(98)00244-3}, number={3}, journal={MICROELECTRONICS RELIABILITY}, author={Wu, Y and Lucovsky, G}, year={1999}, month={Mar}, pages={365–372} }
 @article{misra_lazar_wang_wu_niimi_lucovsky_wortman_hauser_1999, title={Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Misra, V. and Lazar, H. and Wang, Z. and Wu, Y. and Niimi, H. and Lucovsky, G. and Wortman, J. J. and Hauser, J. R.}, year={1999}, pages={1836–1839} }
 @article{niimi_lucovsky_1999, title={Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing}, volume={17}, ISSN={["0734-2101"]}, DOI={10.1116/1.582041}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Niimi, H and Lucovsky, G}, year={1999}, pages={3185–3196} }
 @article{niimi_lucovsky_1999, title={Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics}, volume={17}, number={6}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Niimi, H. and Lucovsky, G.}, year={1999}, pages={2610–2621} }
 @article{lucovsky_1999, title={Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices}, volume={17}, ISSN={["1520-8559"]}, DOI={10.1116/1.581818}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G}, year={1999}, pages={1340–1351} }
 @article{lucovsky_1999, title={Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century}, volume={254}, ISSN={["1873-4812"]}, DOI={10.1016/S0022-3093(99)00432-9}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Lucovsky, G}, year={1999}, month={Sep}, pages={26–37} }
 @article{yang_lucovsky_1999, title={Stability of Si-O-F low-K dielectrics: attack by water molecules as function of near-neighbor Si-F bonding arrangements}, volume={254}, ISSN={["0022-3093"]}, DOI={10.1016/S0022-3093(99)00387-7}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={Yang, H and Lucovsky, G}, year={1999}, month={Sep}, pages={128–133} }
 @article{keister_rowe_kolodziej_niimi_tao_madey_lucovsky_1999, title={Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy}, volume={17}, ISSN={["1520-8559"]}, DOI={10.1116/1.581805}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Keister, JW and Rowe, JE and Kolodziej, JJ and Niimi, H and Tao, HS and Madey, TE and Lucovsky, G}, year={1999}, pages={1250–1257} }
 @article{wu_niimi_yang_lucovsky_fair_1999, title={Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Wu, Y. and Niimi, H. and Yang, H. and Lucovsky, G. and Fair, R. B.}, year={1999}, pages={1813–1822} }
 @article{lucovsky_phillips_1999, title={The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00391-3}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Phillips, JC}, year={1999}, month={Sep}, pages={291–294} }
 @article{yang_niimi_wu_lucovsky_keister_rowe_1999, title={The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00395-0}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Yang, H and Niimi, H and Wu, Y and Lucovsky, G and Keister, JW and Rowe, JE}, year={1999}, month={Sep}, pages={307–310} }
 @article{wolfe_hinds_wang_lucovsky_ward_xu_nemanich_maher_1999, title={Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces}, volume={17}, ISSN={["0734-2101"]}, DOI={10.1116/1.581745}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Wolfe, DM and Hinds, BJ and Wang, F and Lucovsky, G and Ward, BL and Xu, M and Nemanich, RJ and Maher, DM}, year={1999}, pages={2170–2177} }
 @article{wu_xiang_bang_lucovsky_lin_1999, title={Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides}, volume={20}, ISSN={["0741-3106"]}, DOI={10.1109/55.767092}, number={6}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Wu, YD and Xiang, Q and Bang, D and Lucovsky, G and Lin, MR}, year={1999}, month={Jun}, pages={262–264} }
 @article{lucovsky_1999, title={Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability}, volume={43}, ISSN={["2151-8556"]}, DOI={10.1147/rd.433.0301}, number={3}, journal={IBM JOURNAL OF RESEARCH AND DEVELOPMENT}, author={Lucovsky, G}, year={1999}, month={May}, pages={301–326} }
 @article{yang_lucovsky_1998, title={A unified chemical bonding model for defect generation in a-SiH: Photo-induced defects in photovoltaic devices and current-induced defects in TFTs}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.1082}, number={3B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Yang, H and Lucovsky, G}, year={1998}, month={Mar}, pages={1082–1090} }
 @article{lucovsky_1998, title={Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces}, volume={230 (part A)}, number={1998 May}, journal={Journal of Non-crystalline Solids}, author={Lucovsky, G.}, year={1998}, pages={1–14} }
 @article{young_schafer_jessen_bandhu_brillson_lucovsky_niimi_1998, title={Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Young, A. P. and Schafer, J. and Jessen, G. H. and Bandhu, R. and Brillson, L. J. and Lucovsky, G. and Niimi, H.}, year={1998}, pages={2177–2181} }
 @article{koh_niimi_lucovsky_green_1998, title={Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.709}, number={2}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Koh, K and Niimi, H and Lucovsky, G and Green, ML}, year={1998}, month={Feb}, pages={709–714} }
 @article{wang_lupke_di ventra_pantelides_gilligan_tolk_kizilyalli_roy_margaritondo_lucovsky_1998, title={Coupled electron-hole dynamics at the Si/SiO2 interface}, volume={81}, ISSN={["0031-9007"]}, DOI={10.1103/PhysRevLett.81.4224}, number={19}, journal={PHYSICAL REVIEW LETTERS}, author={Wang, W and Lupke, G and Di Ventra, M and Pantelides, ST and Gilligan, JM and Tolk, NH and Kizilyalli, IC and Roy, PK and Margaritondo, G and Lucovsky, G}, year={1998}, month={Nov}, pages={4224–4227} }
 @article{schafer_young_brillson_niimi_lucovsky_1998, title={Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon}, volume={73}, ISSN={["0003-6951"]}, DOI={10.1063/1.122003}, number={6}, journal={APPLIED PHYSICS LETTERS}, author={Schafer, J and Young, AP and Brillson, LJ and Niimi, H and Lucovsky, G}, year={1998}, month={Aug}, pages={791–793} }
 @article{lucovsky_niimi_golz_kurz_1998, title={Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations}, volume={123}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(97)00469-8}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Niimi, H and Golz, A and Kurz, H}, year={1998}, month={Jan}, pages={435–439} }
 @article{lucovsky_yang_massoud_1998, title={Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Massoud, H. Z.}, year={1998}, pages={2191–2198} }
 @article{lupke_busch_meyer_kurz_brandt_yang_trampert_ploog_lucovsky_1998, title={Interface electronic transition observed by optical second-harmonic spectroscopy in beta-GaN/GaAs(001) heterostructures}, volume={57}, ISSN={["1550-235X"]}, DOI={10.1103/physrevb.57.3722}, number={7}, journal={PHYSICAL REVIEW B}, author={Lupke, G and Busch, O and Meyer, C and Kurz, H and Brandt, O and Yang, H and Trampert, A and Ploog, KH and Lucovsky, G}, year={1998}, month={Feb}, pages={3722–3725} }
 @article{claflin_lucovsky_1998, title={Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Claflin, B. and Lucovsky, G.}, year={1998}, pages={2154–2158} }
 @article{claflin_binger_lucovsky_1998, title={Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers}, volume={16}, ISSN={["1520-8559"]}, DOI={10.1116/1.581297}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Claflin, B and Binger, M and Lucovsky, G}, year={1998}, pages={1757–1761} }
 @article{lucovsky_koh_chaflin_hinds_1998, title={Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal}, volume={123}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)00528-X}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Koh, K and Chaflin, B and Hinds, B}, year={1998}, month={Jan}, pages={490–495} }
 @article{hinds_wang_wolfe_hinkle_lucovsky_1998, title={Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Hinds, B. J. and Wang, F. and Wolfe, D. M. and Hinkle, C. L. and Lucovsky, G.}, year={1998}, pages={2171–2176} }
 @article{wolfe_wang_habermehl_lucovsky_1998, title={Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)}, volume={16}, number={1}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Wolfe, D. M. and Wang, F. and Habermehl, S. and Lucovsky, G.}, year={1998}, pages={207} }
 @article{lucovsky_phillips_1998, title={Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)}, volume={230 (part B)}, number={1998}, journal={Journal of Non-crystalline Solids}, author={Lucovsky, G. and Phillips, J. C.}, year={1998}, pages={1221–1225} }
 @article{vogel_ahmed_hornung_henson_mclarty_lucovsky_hauser_wortman_1998, title={Modeled tunnel currents for high dielectric constant dielectrics}, volume={45}, ISSN={["0018-9383"]}, DOI={10.1109/16.678572}, number={6}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Vogel, EM and Ahmed, KZ and Hornung, B and Henson, WK and McLarty, PK and Lucovsky, G and Hauser, JR and Wortman, JJ}, year={1998}, month={Jun}, pages={1350–1355} }
 @article{lucovsky_1998, title={Monolayer incorporation of nitrogen at Si-SiO2 interfaces: Interface characterization and electrical properties}, volume={16}, ISSN={["1520-8559"]}, DOI={10.1116/1.581005}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G}, year={1998}, pages={356–364} }
 @article{lucovsky_niimi_koh_green_1998, title={Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy}, volume={5}, ISSN={["0218-625X"]}, DOI={10.1142/S0218625X98000323}, number={1}, journal={SURFACE REVIEW AND LETTERS}, author={Lucovsky, G and Niimi, H and Koh, K and Green, ML}, year={1998}, month={Feb}, pages={167–173} }
 @article{lucovsky_niimi_wu_parker_hauser_1998, title={Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing}, volume={16}, ISSN={["0734-2101"]}, DOI={10.1116/1.581291}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G and Niimi, H and Wu, Y and Parker, CR and Hauser, JR}, year={1998}, pages={1721–1729} }
 @article{koh_niimi_lucovsky_1998, title={Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O}, volume={98}, ISSN={["0257-8972"]}, DOI={10.1016/S0257-8972(97)00392-7}, number={1-3}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Koh, K and Niimi, H and Lucovsky, G}, year={1998}, month={Jan}, pages={1524–1528} }
 @article{lucovsky_yang_1998, title={Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect}, volume={230 (part A)}, number={1998 May}, journal={Journal of Non-crystalline Solids}, author={Lucovsky, G. and Yang, H.}, year={1998}, pages={281–286} }
 @article{yang_lucovsky_1998, title={Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements}, volume={16}, ISSN={["0734-2101"]}, DOI={10.1116/1.581181}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Yang, H and Lucovsky, G}, year={1998}, pages={1525–1528} }
 @article{hinds_wang_wolfe_hinkle_lucovsky_1998, title={Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix}, volume={230 (part A)}, number={1998 May}, journal={Journal of Non-crystalline Solids}, author={Hinds, B. J. and Wang, F. and Wolfe, D. M. and Hinkle, C. L. and Lucovsky, G.}, year={1998}, pages={507–512} }
 @article{yang_niimi_lucovsky_1998, title={Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.366976}, number={4}, journal={JOURNAL OF APPLIED PHYSICS}, author={Yang, HY and Niimi, H and Lucovsky, G}, year={1998}, month={Feb}, pages={2327–2337} }
 @article{wu_lucovsky_1998, title={Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process}, volume={19}, ISSN={["1558-0563"]}, DOI={10.1109/55.720188}, number={10}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Wu, YD and Lucovsky, G}, year={1998}, month={Oct}, pages={367–369} }
 @article{niimi_lucovsky_1998, title={Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation}, volume={98}, ISSN={["0257-8972"]}, DOI={10.1016/S0257-8972(97)00389-7}, number={1-3}, journal={SURFACE & COATINGS TECHNOLOGY}, author={Niimi, H and Lucovsky, G}, year={1998}, month={Jan}, pages={1529–1533} }
 @article{parker_lucovsky_hauser_1998, title={Ultrathin oxide-nitride gate dielectric MOSFET's}, volume={19}, ISSN={["0741-3106"]}, DOI={10.1109/55.663529}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Parker, CG and Lucovsky, G and Hauser, JR}, year={1998}, month={Apr}, pages={106–108} }
 @article{lucovsky_banerjee_niimi_koh_hinds_meyer_lupke_kurz_1997, title={Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C}, volume={117}, ISSN={["1873-5584"]}, DOI={10.1016/S0169-4332(97)80079-7}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Banerjee, A and Niimi, H and Koh, K and Hinds, B and Meyer, C and Lupke, G and Kurz, H}, year={1997}, month={Jun}, pages={202–206} }
 @article{lucovsky_yang_1997, title={Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si-O-F alloy films}, volume={15}, ISSN={["0734-2101"]}, DOI={10.1116/1.580717}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Lucovsky, G and Yang, H}, year={1997}, pages={836–843} }
 @article{lucovsky_yang_jing_whitten_1997, title={Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces}, volume={117}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(97)80077-3}, number={1997 June}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Yang, H and Jing, Z and Whitten, JL}, year={1997}, month={Jun}, pages={192–197} }
 @article{lucovsky_yang_1997, title={Local atomic bonding in fluorinated silicon oxides: Bond-ionicity-controlled contributions of infrared-active vibrations to the static dielectric constant}, volume={36}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.36.1368}, number={3B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Lucovsky, G and Yang, H}, year={1997}, month={Mar}, pages={1368–1373} }
 @article{yang_lucovsky_1997, title={Local dipole field contributions to bond-stretching silicon-hydrogen vibrational modes on flat and vicinal Si(111) surfaces}, volume={4}, ISSN={["0218-625X"]}, DOI={10.1142/S0218625X97000985}, number={5}, journal={SURFACE REVIEW AND LETTERS}, author={Yang, HY and Lucovsky, G}, year={1997}, month={Oct}, pages={891–896} }
 @inproceedings{hinds_aspenes_lucovsky_1997, title={Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability}, booktitle={Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447)}, publisher={Pittsburgh, PA: Materials Research Society}, author={Hinds, B. J. and Aspenes, D. E. and Lucovsky, G.}, year={1997}, pages={191–196} }
 @article{wolfe_wang_lucovsky_1997, title={Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering}, volume={15}, ISSN={["0734-2101"]}, DOI={10.1116/1.580426}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Wolfe, DM and Wang, F and Lucovsky, G}, year={1997}, pages={1035–1040} }
 @article{lucovsky_banerjee_hinds_claflin_koh_yang_1997, title={Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing}, volume={36}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(97)00049-x}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Lucovsky, G and Banerjee, A and Hinds, B and Claflin, B and Koh, K and Yang, H}, year={1997}, month={Jun}, pages={207–210} }
 @article{golz_lucovsky_koh_wolfe_niimi_kurz_1997, title={Plasma-assisted formation of low defect density SiC-SiO2 interfaces}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Golz, A. and Lucovsky, G. and Koh, K. and Wolfe, D. and Niimi, H. and Kurz, H.}, year={1997}, pages={1097–1104} }
 @article{lucovsky_yang_jing_whitten_1997, title={The role of hydrogen atoms in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H)}, volume={159}, number={1997}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Lucovsky, G. and Yang, H. and Jing, Z. and Whitten, J. L.}, year={1997}, pages={5–10} }
 @article{niimi_koh_lucovsky_1997, title={Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation}, volume={127}, ISSN={["0168-583X"]}, DOI={10.1016/S0168-583X(96)00958-5}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, author={Niimi, H and Koh, K and Lucovsky, G}, year={1997}, month={May}, pages={364–368} }
 @article{masnari_hauser_lucovsky_maher_markunas_ozturk_wortman_1993, title={CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING}, volume={81}, ISSN={["0018-9219"]}, DOI={10.1109/JPROC.1993.752025}, number={1}, journal={PROCEEDINGS OF THE IEEE}, author={MASNARI, NA and HAUSER, JR and LUCOVSKY, G and MAHER, DM and MARKUNAS, RJ and OZTURK, MC and WORTMAN, JJ}, year={1993}, month={Jan}, pages={42–59} }
 @article{esser_h._h._c._g.n._lucovsky_1993, title={Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H}, volume={73}, journal={Journal of Applied Physics}, author={Esser, A. Heesel and H., Kurz and H., Wang and C., Parsons and G.N. and Lucovsky, G.}, year={1993}, pages={1235} }
 @misc{pollack_shen_lucovsky_1993, title={Method for determining interface properties of semiconductor materials by photoreflectance}, volume={5,255,070}, number={1993 Oct. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Pollack, F. H. and Shen, H. E. and Lucovsky, G.}, year={1993} }
 @article{kurz h._heesel h._wang c._g._1993, title={Optical-detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the subpicosecond time-domain}, volume={166}, journal={Journal of Non-crystalline Solids}, author={Kurz H., Esser A. and Heesel H., Lucovsky G. and Wang C. and G., Parsons}, year={1993}, pages={575–578} }
 @article{esser_h._h._c._g.n._lucovsky_1993, title={Transport processes of optically generated free carriers in amorphous silicon, a-Si:H in the femtosecond time regime}, volume={B}, number={47}, journal={Physical Review}, author={Esser, A. Heesel and H., Kurz and H., Wang and C., Parsons and G.N. and Lucovsky, G.}, year={1993}, pages={3593} }
 @article{parsons_wang_lucovsky_1990, title={ANNEALING OF INTRINSIC AND PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON}, volume={193}, ISSN={["0040-6090"]}, DOI={10.1016/0040-6090(90)90209-v}, number={1-2}, journal={THIN SOLID FILMS}, author={PARSONS, GN and WANG, C and LUCOVSKY, G}, year={1990}, month={Dec}, pages={577–587} }
 @article{parsons_wang_lucovsky_1990, title={Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon}, volume={56}, journal={Applied Physics Letters}, author={Parsons, G.N. and Wang, C. and Lucovsky, G.}, year={1990}, pages={1895–1897} }
 @article{parsons_lucovsky_1990, title={Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon, nitrogen alloys}, volume={B}, number={41}, journal={Physical Review}, author={Parsons, G.N. and Lucovsky, G.}, year={1990}, pages={1664–1667} }
 @article{esser_seibert_kurz_parsons_wang_davidson_lucovsky_nemanich_1990, title={Ultrafast recombination and trapping in amorphous silicon}, volume={B}, number={41}, journal={Physical Review}, author={Esser, A. and Seibert, K. and Kurz, H. and Parsons, G.N. and Wang, C. and Davidson, B. and Lucovsky, G. and Nemanich, R.J.}, year={1990}, pages={2879–2884} }
 @article{parsons_tsu_lucovsky_1989, title={Defects in a-Si:H films produced by remote plasma enhanced CVD}, volume={107}, journal={Journal of Non-crystalline Solids}, author={Parsons, G.N. and Tsu, T.V. and Lucovsky, G.}, year={1989}, pages={295–300} }
 @article{kim_parsons_lucovsky_1989, title={Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence}, volume={114}, journal={Journal of Non-Cyrstalline Solids}, author={Kim, S.S. and Parsons, G.N. and Lucovsky, G.}, year={1989} }
 @article{tsu_lucovsky_davidson_1989, title={EFFECTS OF THE NEAREST NEIGHBORS AND THE ALLOY MATRIX ON SIH STRETCHING VIBRATIONS IN THE AMORPHOUS SIOR-H (0-LESS-THAN-R-LESS-THAN-2) ALLOY SYSTEM}, volume={40}, ISSN={["0163-1829"]}, DOI={10.1103/physrevb.40.1795}, number={3}, journal={PHYSICAL REVIEW B}, author={TSU, DV and LUCOVSKY, G and DAVIDSON, BN}, year={1989}, month={Jul}, pages={1795–1805} }
 @article{tsu_parsons_lucovsky_watkins_1989, title={Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition}, volume={A}, number={7}, journal={Journal of Vacuum Science & Technology}, author={Tsu, D.V. and Parsons, G.N. and Lucovsky, G. and Watkins, M.W.}, year={1989}, pages={1115–1123} }
 @article{parsons_tsu_wang_lucovsky_1989, title={Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD}, volume={A}, number={7}, journal={Journal of Vacuum Science & Technology}, author={Parsons, G.N. and Tsu, D.V. and Wang, C. and Lucovsky, G.}, year={1989}, pages={1124–1129} }
 @article{parsons_wang_lucovsky_1989, title={Reduction of defects by high temperature  (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon}, journal={Journal of Non-crystalline Solids}, author={Parsons, G.N. and Wang, C. and Lucovsky, G.}, year={1989}, pages={114} }
 @article{parsons_tsu_lucovsky_1988, title={Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition}, volume={A}, number={6}, journal={Journal of Vacuum Science & Technology}, author={Parsons, G.N. and Tsu, D.V. and Lucovsky, G.}, year={1988}, pages={1912–1916} }
 @article{nemanich_glass_lucovsky_shroder_1988, title={RAMAN-SCATTERING CHARACTERIZATION OF CARBON BONDING IN DIAMOND AND DIAMONDLIKE THIN-FILMS}, volume={6}, ISSN={["1520-8559"]}, DOI={10.1116/1.575297}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={NEMANICH, RJ and GLASS, JT and LUCOVSKY, G and SHRODER, RE}, year={1988}, pages={1783–1787} }
 @article{tsu_parsons_lucovsky_1988, title={Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition}, volume={A}, number={6}, journal={Journal of Vacuum Science & Technology}, author={Tsu, D.V. and Parsons, G.N. and Lucovsky, G.}, year={1988}, pages={1849–1854} }
 @article{lucovsky_manitini_srivastava_irene_1987, title={Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy}, volume={5}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena}, author={Lucovsky, G. and Manitini, M. J. and Srivastava, J. K. and Irene, E. A.}, year={1987}, pages={530–537} }
 @article{parsons_tsu_lucovsky_1987, title={OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION (RPECVD)}, volume={97-8}, ISSN={["0022-3093"]}, DOI={10.1016/0022-3093(87)90329-2}, journal={JOURNAL OF NON-CRYSTALLINE SOLIDS}, author={PARSONS, GN and TSU, DV and LUCOVSKY, G}, year={1987}, month={Dec}, pages={1375–1378} }
 @article{parsons_kusano_lucovsky_1987, title={Photoelectronic properties of a-Si:H and a-Ge:H thin films in surface cell structures}, volume={A}, number={5}, journal={Journal of Vacuum Science & Technology}, author={Parsons, G.N. and Kusano, C. and Lucovsky, G.}, year={1987}, pages={1655–1660} }
 @article{parsons_cook_lucovsky_lin_mantini_1986, title={Deposition of a-Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets}, volume={A}, number={4}, journal={Journal of Vacuum Science & Technology}, author={Parsons, G.N. and Cook, J.W., Jr. and Lucovsky, G. and Lin, S.Y. and Mantini, M.J.}, year={1986}, pages={470–474} }
 @article{pai_chao_takagi_lucovsky_1986, title={INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION}, volume={4}, ISSN={["0734-2101"]}, DOI={10.1116/1.573833}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={PAI, PG and CHAO, SS and TAKAGI, Y and LUCOVSKY, G}, year={1986}, pages={689–694} }
 @article{pankove_zanzucchi_magee_lucovsky_1985, title={HYDROGEN LOCALIZATION NEAR BORON IN SILICON}, volume={46}, ISSN={["1077-3118"]}, DOI={10.1063/1.95599}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={PANKOVE, JI and ZANZUCCHI, PJ and MAGEE, CW and LUCOVSKY, G}, year={1985}, pages={421–423} }
 @article{rudder_parsons_cook_lucovsky_1985, title={Low defect density Si,Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes}, volume={77 & 78}, journal={Journal of Non-crystalline Solids}, author={Rudder, R.A. and Parsons, G.N. and Cook, J.W., Jr. and Lucovsky, G.}, year={1985}, pages={885–889} }