Liqi Zhang

7.2-kV Single-Stage Solid-State Transformer Based on the Current-Fed Series Resonant Converter and 15-kV SiC MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 34(2), 1099–1112.

1200v/200a freedm-pair: loss and cost reduction analysis

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda), 152–157.

15kV/40A FREEDM super-cascode: A cost effective SiC high voltage and high frequency power switch

2016 ieee energy conversion congress and exposition (ecce).

Analysis and loss comparison of megahertz high voltage isolated dc/dc converters utilizing integrated sic mosfet module

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda), 291–296.

Design and application of a 1200V ultra-fast integrated silicon carbide MOSFET module

Apec 2016 31st annual ieee applied power electronics conference and exposition, 2063–2070.

High bandwidth current sensing of sic mosfet with a si current mirror

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda), 200–203.

Improved 6.5kV FREEMD-pair based on SiC JFET and Si IGBT

Apec 2016 31st annual ieee applied power electronics conference and exposition, 269–275.

Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for solid state transformer (SST) application

Apec 2016 31st annual ieee applied power electronics conference and exposition, 2365–2369.

Practical consideration and implementation of a medium voltage SiC AC-DC rectifier

2016 ieee energy conversion congress and exposition (ecce).

3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 390–395.

6.5 kV Si/SiC hybrid power module: An ideal next step?

2015 IEEE International Workshop on Integrated Power Packaging (IWIPP), 64–67.

Comparative evaluation of 6kV Si and SiC power devices for medium voltage power flectronics applications

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 160–165.