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D., Xu, M. M., & Maher, D. M. (1999). Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352. https://doi.org/10.1149/1.1391938 PA O'Neil, Ozturk, M. C., Batchelor, A. D., & Maher, D. M. (1999). Effects of oxygen on selective silicon deposition using disilane. MATERIALS LETTERS, 38(6), 418–422. https://doi.org/10.1016/S0167-577X(98)00200-6 Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., … Parsons, G. N. (1999). Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100). APPLIED PHYSICS LETTERS, 75(25), 4001–4003. https://doi.org/10.1063/1.125519 PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078. https://doi.org/10.1149/1.1392052 PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086. https://doi.org/10.1149/1.1392053 PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Quality of selective silicon epitaxial films deposited using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343. https://doi.org/10.1149/1.1391937 Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177. https://doi.org/10.1116/1.581745 Neogi, S. S., Venables, D., Na, Z. Y., & Maher, D. M. (1998). Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 471–475. https://doi.org/10.1116/1.589832 Li, V. Z. Q., Mirabedini, M. R., Hornung, B. E., Heinisch, H. H., Xu, M., Batchelor, D., … Kuehn, R. T. (1998). Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases. JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476. https://doi.org/10.1063/1.367404 Swaminathan, S., Jones, I. P., Maher, D. M., Johnson, A. W. S., & Fraser, H. L. (1997). Effects of Debye-Waller factors and compositional uncertainties on the 200 structure factor refinement in gamma-TiAl. PHILOSOPHICAL MAGAZINE LETTERS, 75(5), 261–270. https://doi.org/10.1080/095008397179516 Neogi, S. S., Venables, D., Ma, Z. Y., Maher, D. M., Taylor, M., & Corcoran, S. (1997). Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique. JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815. https://doi.org/10.1063/1.366449 ONeil, P. A., Ozturk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. (1997). Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315. https://doi.org/10.1149/1.1838003 Swaminathan, S., Altynov, S., Jones, I. P., Zaluzec, N. J., Maher, D. M., & Fraser, H. L. (1997). Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method. ULTRAMICROSCOPY, 69(3), 169–183. https://doi.org/10.1016/S0304-3991(97)00045-4 Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., … Maher, D. M. (1997). Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications. Applied Physics Letters, 71(23), 3388–3390. https://doi.org/10.1063/1.120344 MASNARI, N. A., HAUSER, JR, LUCOVSKY, G., MAHER, D. M., MARKUNAS, R. J., OZTURK, M. C., & WORTMAN, J. J. (1993). CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING. PROCEEDINGS OF THE IEEE, 81(1), 42–59. https://doi.org/10.1109/JPROC.1993.752025