Michael A. Littlejohn

Exciton binding energies in GaN/AlxGa1−xN pseudomorphic quantum wells

Superlattices and Microstructures, 27(1), 53–58.

Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

IEEE Transactions on Electron Devices, 46(8), 1760–1767.

Piezoelectric and excitonic effects on optical properties of pseudomorphically strained wurtzite GaN quantum well lasers

Compound Semiconductors 1998 (Institute of Physics Conference Series; No. 162), (162), 37–42.

A new device design methodology for manufacturability

IEEE Transactions on Electron Devices, 45(3), 634–642.

Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

IEEE Transactions on Electron Devices, 45(1), 254–260.

Self-consistent calculation of mode spectra and modulation response in wurtzite GaN quantum-well lasers

IEEE Photonics Technology Letters, 10(1), 51–53.

Temperature dependence of impact ionization coefficients in p-Si

Journal of Applied Physics, 83(9), 4988–4990.

Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers

Applied Physics Letters, 71(6), 820–822.

Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies

IEEE Transactions on Electron Devices, 44(5), 815–821.

Strain effects on optical gain in wurtzite GaN

Journal of Applied Physics, 82(1), 386–391.

Transient ballistic transport in GaN

Journal of Applied Physics, 81(6), 2901–2903.

Valence band spectra in pseudomorphically strained wurtzite quantum wells

Superlattices and Microstructures, 22(2), 195–198.

Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs

Solid-State Electronics, 38(3), 573–579.

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

IEEE Transactions on Electron Devices, 41(10), 1880–1882.

VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING

JOURNAL OF APPLIED PHYSICS, 48(11), 4587–4590.