Works (15)

Updated: July 5th, 2023 16:04

2000 journal article

Exciton binding energies in GaN/AlxGa1−xN pseudomorphic quantum wells

Superlattices and Microstructures, 27(1), 53–58.

By: J. Jeon n, G. Sanders n, K. Kim n & M. Littlejohn n

co-author countries: United States of America 🇺🇸
author keywords: light emitting devices; theory and model; exciton binding energy
Sources: Web Of Science, Crossref
Added: August 6, 2018

1999 journal article

Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

IEEE Transactions on Electron Devices, 46(8), 1760–1767.

By: S. Williams n, K. Kim n, M. Littlejohn n & W. Holton n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1999 journal article

Piezoelectric and excitonic effects on optical properties of pseudomorphically strained wurtzite GaN quantum well lasers

Compound Semiconductors 1998 (Institute of Physics Conference Series; No. 162), (162), 37–42.

By: J. Jeon, G. Sanders, K. Kim & M. Littlejohn

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

A new device design methodology for manufacturability

IEEE Transactions on Electron Devices, 45(3), 634–642.

By: J. Lu n, W. Holton n, J. Fenner n, S. Williams n, K. Kim n, A. Hartford n, D. Chen n, K. Roze n, M. Littlejohn n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1998 journal article

Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

IEEE Transactions on Electron Devices, 45(1), 254–260.

By: S. Williams n, R. Hulfachor n, K. Kim n, M. Littlejohn n & W. Holton n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1998 journal article

Self-consistent calculation of mode spectra and modulation response in wurtzite GaN quantum-well lasers

IEEE Photonics Technology Letters, 10(1), 51–53.

By: J. Wang n, K. Kim* & M. Littlejohn*

co-author countries: United States of America 🇺🇸
author keywords: electric field effect; optical polarization; optoelectronic devices; piezoelectric semiconductor materials/devices; quantum-well laser; semiconductor device modeling; strain
Sources: Web Of Science, Crossref
Added: August 6, 2018

1998 journal article

Temperature dependence of impact ionization coefficients in p-Si

Journal of Applied Physics, 83(9), 4988–4990.

By: K. Roze n, N. Bannov n, K. Kim n, W. Holton n & M. Littlejohn n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1997 journal article

Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers

Applied Physics Letters, 71(6), 820–822.

By: J. Wang n, K. Kim n & M. Littlejohn n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, Crossref
Added: August 6, 2018

1997 journal article

Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies

IEEE Transactions on Electron Devices, 44(5), 815–821.

By: R. Hulfachor n, K. Kim n, M. Littlejohn n & C. Osburn n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1997 journal article

Strain effects on optical gain in wurtzite GaN

Journal of Applied Physics, 82(1), 386–391.

By: J. Jeon n, B. Lee n, Y. Sirenko n, K. Kim n & M. Littlejohn n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, Crossref
Added: August 6, 2018

1997 journal article

Transient ballistic transport in GaN

Journal of Applied Physics, 81(6), 2901–2903.

By: N. Mansour n, K. Kim n, N. Bannov n & M. Littlejohn n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1997 journal article

Valence band spectra in pseudomorphically strained wurtzite quantum wells

Superlattices and Microstructures, 22(2), 195–198.

By: Y. Sirenko n, J. Jeon n, B. Lee n, K. Kim n, M. Littlejohn n & M. Stroscio*

co-author countries: United States of America 🇺🇸
author keywords: GaN/AlxGa1-xN; wurtzites; valence band; strain
Sources: Web Of Science, Crossref
Added: August 6, 2018

1995 journal article

Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs

Solid-State Electronics, 38(3), 573–579.

By: H. Tian n, K. Kim n, J. Hauser n, N. Masnari n & M. Littlejohn n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1994 journal article

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

IEEE Transactions on Electron Devices, 41(10), 1880–1882.

By: H. Tian, R. Hulfachor n, J. Ellis-Monaghan*, K. Kim n, M. Littlejohn n, J. Hauser n, N. Masnari n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

1977 journal article

VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING

JOURNAL OF APPLIED PHYSICS, 48(11), 4587–4590.

By: M. Littlejohn n, . Hauser n & T. Glisson n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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