@article{molaei_bayati_alipour_narayan_2013, title={Controlled epitaxial integration of polar ZnO(0001) with Si(001)}, volume={102}, number={10}, journal={Applied Physics Letters}, author={Molaei, R. and Bayati, M. R. and Alipour, H. M. and Narayan, J.}, year={2013} }
 @article{bayati_molaei_wu_budai_liu_narayan_narayan_2013, title={Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures}, volume={61}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2013.09.019}, abstractNote={This study focuses on the role of strain and thin film epitaxy on the semiconductor-to-metal transition (SMT) characteristics of single crystalline VO2 thin films. The VO2/TiO2 heterostructures of controlled orientations were epitaxially grown on m-cut, r-cut and c-cut sapphire substrates. Detailed structural investigations were performed using high-resolution X-ray diffraction (2θ–θ and φ scans) and high-resolution transmission electron microscopy techniques to correlate SMT properties with microstructural characteristics. Monoclinic (M1) VO2 thin films with (1 0 0), (0 0 1) and (2¯01) out-of-plane orientations were grown on TiO2(1 0 1)/r-sapphire, TiO2(1 0 0)/c-sapphire and TiO2(0 0 1)/m-sapphire platforms, respectively. The in-plane alignments across the interfaces were established to be [0 1 0](1 0 0)VO2||[0 1 0](1 0 1)TiO2, [1 0 0](0 0 1)VO2||[0 0 1](1 0 0)TiO2 and [010](2¯01)VO2‖[010](001)TiO2 for r-sapphire, c-sapphire and m-sapphire substrates, respectively. We were able to tune the SMT temperature of VO2 epilayers from ∼313 K to 354 K (bulk Tc ≈ 340 K). The SMT characteristics were interpreted based upon the residual strain in the VO2 lattice, particularly along the c-axis of tetragonal VO2. This research introduces the VO2-based single crystalline heterostructures as a potential candidate for a wide range of applications where different transition temperatures are required.}, number={20}, journal={ACTA MATERIALIA}, author={Bayati, M. R. and Molaei, R. and Wu, F. and Budai, J. D. and Liu, Y. and Narayan, R. J. and Narayan, J.}, year={2013}, month={Dec}, pages={7805–7815} }
 @article{bayati_joshi_narayan_narayan_2013, title={Low-temperature processing and control of structure and properties of TiO2/c-sapphire epitaxial heterostructures}, volume={28}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2013.42}, abstractNote={Abstract}, number={13}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Bayati, Mohammad Reza and Joshi, Shivani and Narayan, Roger Jay and Narayan, Jay}, year={2013}, month={Jul}, pages={1669–1679} }
 @article{yousefipour_akbari_bayati_2013, title={The effect of EEMAO processing on surface mechanical properties of the TiO2-ZrO2 nanostructured composite coatings}, volume={39}, number={7}, journal={Ceramics International}, author={Yousefipour, K. and Akbari, A. and Bayati, M. R.}, year={2013}, pages={7809–7815} }
 @article{bayati_alipour_joshi_molaei_narayan_narayan_misture_2013, title={Thin-Film Epitaxy and Enhancement of Photocatalytic Activity of Anatase/Zirconia Heterostructures by Nanosecond Excimer Laser Treatment}, volume={117}, ISSN={["1932-7447"]}, DOI={10.1021/jp400545t}, abstractNote={We present a novel method to improve the photocatalytic efficiency of epitaxial c-axis anatase TiO2 thin films by a factor of 2 by using nanosecond laser annealing. The anatase films were epitaxially grown by pulsed laser deposition on Si(001) substrates, where a tetragonal yttria-stabilized zirconia (t-YSZ) buffer was used to effectively remove the native SiOx layer from the substrates prior to deposition of anatase. With the information from X-ray and TEM diffraction patterns, the epitaxial relationship across the interfaces was shown to be: (001)[110]anatase||(001)[110]t-YSZ||(001)[001]silicon. Performing high-temperature XRD, we observed that the anatase epilayers were stable up to 1100 °C, far beyond the normal anatase-to-rutile transition temperature (approximately 600–700 °C). The samples were subsequently laser-annealed in air by a single pulse of KrF excimer laser beam at an energy density of ∼0.3 J.cm–2. On the basis of the detailed HRTEM studies, the interface between the laser annealed and the...}, number={14}, journal={JOURNAL OF PHYSICAL CHEMISTRY C}, author={Bayati, M. R. and Alipour, H. M. and Joshi, S. and Molaei, R. and Narayan, R. J. and Narayan, J. and Misture, S. T.}, year={2013}, month={Apr}, pages={7138–7147} }
 @article{skoog_bayati_petrochenko_stafslien_daniels_cilz_comstock_elam_narayan_2012, title={Antibacterial activity of zinc oxide-coated nanoporous alumina}, volume={177}, ISSN={["0921-5107"]}, DOI={10.1016/j.mseb.2012.04.024}, abstractNote={Nanoporous alumina membranes, also known as anodized aluminum oxide membranes, are being investigated for use in treatment of burn injuries and other skin wounds. In this study, atomic layer deposition was used for coating the surfaces of nanoporous alumina membranes with zinc oxide. Agar diffusion assays were used to show activity of zinc oxide-coated nanoporous alumina membranes against several bacteria found on the skin surface, including Bacillus subtilis, Escherichia coli, Staphylococcus aureus, and Staphylococcus epidermidis. On the other hand, zinc oxide-coated nanoporous alumina membranes did not show activity against Pseudomonas aeruginosa, Enterococcus faecalis, and Candida albicans. These results suggest that zinc oxide-coated nanoporous alumina membranes have activity against some Gram-positive and Gram-negative bacteria that are associated with skin colonization and skin infection.}, number={12}, journal={MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS}, author={Skoog, S. A. and Bayati, M. R. and Petrochenko, P. E. and Stafslien, S. and Daniels, J. and Cilz, N. and Comstock, D. J. and Elam, J. W. and Narayan, R. J.}, year={2012}, month={Jul}, pages={992–998} }
 @article{shoaei-rad_bayati_zargar_javadpour_golestani-fard_2012, title={In situ growth of ZrO2-Al2O3 nano-crystalline ceramic coatings via micro arc oxidation of aluminum substrates}, volume={47}, number={6}, journal={Materials Research Bulletin}, author={Shoaei-Rad, V. and Bayati, M. R. and Zargar, H. R. and Javadpour, J. and Golestani-Fard, F.}, year={2012}, pages={1494–1499} }
 @article{bayati_kajbafvala_sangpour_zargar_2012, title={Nanostructured layers for catalytic applications}, journal={Journal of Nanomaterials}, author={Bayati, M. R. and Kajbafvala, A. and Sangpour, P. and Zargar, H. R.}, year={2012} }
 @article{bayati_gupta_molaei_narayan_narayan_2012, title={Phase Tuning, Thin Film Epitaxy, Interfacial Modeling, and Properties of YSZ-Buffered TiO2 on Si(001) Substrate}, volume={12}, ISSN={1528-7483 1528-7505}, url={http://dx.doi.org/10.1021/cg3007124}, DOI={10.1021/cg3007124}, abstractNote={We have studied systematically the influence of pulsed laser deposition variables on microstructure and properties of TiO2 epitaxial thin films where integration with Si(100) substrate was achieved by cubic yttria-stabilized-zirconia (c-YSZ) buffer layer. Details of crystallographic and atomic arrangements across the interfaces are discussed in the light of the domain matching epitaxy paradigm. The single crystalline rutile films were obtained at higher substrate temperatures and lower oxygen pressures; whereas, the growth of epitaxial anatase films was promoted by decreasing the temperature and increasing the oxygen pressure. We showed that crystallographic structure of the TiO2 films is determined mainly by the termination structure of the c-YSZ layer and the bonding characteristics across the TiO2/c-YSZ interface. Using 2θ and φ scans of XRD, the epitaxial relationship between Si(100) substrate and the zirconia buffer layer was shown to be cube-on-cube: (001)[100]YSZ∥(001)[100]Si. Furthermore, the epit...}, number={9}, journal={Crystal Growth & Design}, publisher={American Chemical Society (ACS)}, author={Bayati, M. R. and Gupta, P. and Molaei, R. and Narayan, R. J. and Narayan, J.}, year={2012}, month={Aug}, pages={4535–4544} }
 @article{bayati_joshi_molaei_narayan_narayan_2012, title={Structure-property correlation in epitaxial (200) rutile films on sapphire substrates}, volume={187}, ISSN={["0022-4596"]}, DOI={10.1016/j.jssc.2012.01.031}, abstractNote={We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using φ-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 −1 0), and rutile(0 1 0)||sapphire(1 −2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV–VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation.}, journal={JOURNAL OF SOLID STATE CHEMISTRY}, author={Bayati, M. R. and Joshi, Sh and Molaei, R. and Narayan, R. J. and Narayan, J.}, year={2012}, month={Mar}, pages={231–237} }
 @article{molaei_bayati_narayan_2012, title={Thin film epitaxy and near bulk semiconductor to metal transition in VO2/NiO/YSZ/Si(001) heterostructures}, volume={27}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2012.374}, abstractNote={Abstract}, number={24}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Molaei, Roya and Bayati, Mohammad Reza and Narayan, Jagdish}, year={2012}, month={Dec}, pages={3103–3109} }
 @article{salami_bayati_golestani-fard_zargar_2012, title={UV and visible photodecomposition of organic pollutants over micro arc oxidized Ag-activated TiO2 nanocrystalline layers}, volume={47}, number={4}, journal={Materials Research Bulletin}, author={Salami, N. and Bayati, M. R. and Golestani-Fard, F. and Zargar, H. R.}, year={2012}, pages={1080–1088} }
 @article{bayati_golestani-fard_moshfegh_molaei_2011, title={A photocatalytic approach in micro arc oxidation of WO3-TiO2 nano porous semiconductors under pulse current}, volume={128}, number={3}, journal={Materials Chemistry and Physics}, author={Bayati, M. R. and Golestani-Fard, F. and Moshfegh, A. Z. and Molaei, R.}, year={2011}, pages={427–432} }
 @article{bayati_molaei_moshfegh_golestani-fard_2011, title={A strategy for single-step elaboration of V2O5-grafted TiO2 nanostructured photocatalysts with evenly distributed pores}, volume={509}, number={21}, journal={Journal of Alloys and Compounds}, author={Bayati, M. R. and Molaei, R. and Moshfegh, A. Z. and Golestani-Fard, F.}, year={2011}, pages={6236–6241} }
 @article{samanipour_bayati_golestani-fard_zargar_troczynski_mirhabibi_2011, title={An innovative technique to simply fabricate ZrO2-HA-TiO2 nanostructured layers}, volume={86}, number={1}, journal={Colloids and Surfaces. B, Biointerfaces}, author={Samanipour, F. and Bayati, M. R. and Golestani-Fard, F. and Zargar, H. R. and Troczynski, T. and Mirhabibi, A. R.}, year={2011}, pages={14–20} }
 @article{samanipour_bayati_zargar_golestani-farda_troczynski_taheri_2011, title={Electrophoretic enhanced micro arc oxidation of ZrO(2)-HAp-TiO(2) nanostructured porous layers}, volume={509}, number={38}, journal={Journal of Alloys and Compounds}, author={Samanipour, F. and Bayati, M. R. and Zargar, H. R. and Golestani-Farda, F. and Troczynski, T. and Taheri, M.}, year={2011}, pages={9351–9355} }
 @article{shoaei-rad_bayati_golestani-fard_zargar_javadpour_2011, title={Fabrication of ZrO2-Al2O3 hybrid nano-porous layers through micro arc oxidation process}, volume={65}, number={12}, journal={Materials Letters}, author={Shoaei-Rad, V. and Bayati, M. R. and Golestani-Fard, F. and Zargar, H. R. and Javadpour, J.}, year={2011}, pages={1835–1838} }
 @article{bayati_golestani-fard_moshfegh_molaei_2011, title={In situ derivation of sulfur activated TiO(2) nano porous layers through pulse-micro arc oxidation technology}, volume={46}, number={10}, journal={Materials Research Bulletin}, author={Bayati, M. R. and Golestani-Fard, F. and Moshfegh, A. Z. and Molaei, R.}, year={2011}, pages={1642–1647} }
 @article{golestani-fard_bayati_zargar_abbasi_rezaei_2011, title={MAO-preparation of nanocrystalline hydroxyapatite-titania composite films: Formation stages and effect of the growth time}, volume={46}, number={12}, journal={Materials Research Bulletin}, author={Golestani-Fard, F. and Bayati, M. R. and Zargar, H. R. and Abbasi, S. and Rezaei, H. R.}, year={2011}, pages={2422–2426} }
 @article{abbasi_bayati_golestani-fard_rezaei_zargar_samanipour_shoaei-rad_2011, title={Micro arc oxidized HAp-TiO2 nanostructured hybrid layers-part I: Effect of voltage and growth time}, volume={257}, number={14}, journal={Applied Surface Science}, author={Abbasi, S. and Bayati, M. R. and Golestani-Fard, F. and Rezaei, H. R. and Zargar, H. R. and Samanipour, F. and Shoaei-Rad, V.}, year={2011}, pages={5944–5949} }