Works (59)

Updated: August 16th, 2024 13:37

2022 journal article

A comprehensive analytical model for thermoelectric body heat harvesting incorporating the impact of human metabolism and physical activity

APPLIED ENERGY, 324.

By: Y. Sargolzaeiaval n, V. Ramesh n & M. Ozturk n

author keywords: Thermoelectric generator; TEG; Flexible TEG; Metabolic rate; Energy harvesting; Body heat harvesting; Wearable electronics; Self-powered electronics; Wearable health monitoring
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: October 11, 2022

2022 journal article

Microporous vertically aligned CNT nanocomposites with tunable properties for use in flexible heat sinks

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 7(4).

By: O. Yildiz n, M. Lubna n, V. Ramesh n, M. Ozturk n & P. Bradford n

author keywords: Vertically aligned carbon nanotube; Nanocomposite; Microporous structure; Flexible heat sink; Thermal management
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: November 7, 2022

2021 journal article

Aerosol Spray Deposition of Liquid Metal and Elastomer Coatings for Rapid Processing of Stretchable Electronics

MICROMACHINES, 12(2).

By: T. Neumann n, B. Kara n, Y. Sargolzaeiaval n, S. Im n, J. Ma n, J. Yang n, M. Ozturk n, M. Dickey n

author keywords: liquid metal; microparticles; stretchable electronics; aerosol spray deposition
TL;DR: A spray deposition technique for patterning liquid metal alloys to form stretchable conductors, which can then be encapsulated in silicone elastomers via the same spraying procedure, which focuses on quantifying the spraying process and combining it with silicones. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: February 2, 2021

2021 review

Energy Harvesting and Storage with Soft and Stretchable Materials

[Review of ]. ADVANCED MATERIALS, 33(19).

By: V. Vallem n, Y. Sargolzaeiaval n, M. Ozturk n, Y. Lai* & M. Dickey n

author keywords: energy harvesting; energy storage; soft robotics; stretchable electronics
TL;DR: This review highlights various modes of converting ambient sources of energy into electricity using soft and stretchable materials that are useful for emerging classes of stretchable electronics, e-skins, bio-integrated wearables, and soft robotics. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 28, 2021

2021 journal article

Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler

NPJ FLEXIBLE ELECTRONICS, 5(1).

By: V. Padmanabhan Ramesh n, Y. Sargolzaeiaval n, T. Neumann n, V. Misra n, D. Vashaee n, M. Dickey n, M. Ozturk n

Sources: Web Of Science, NC State University Libraries
Added: April 5, 2021

2021 article

IEEE ACCESS SPECIAL SECTION EDITORIAL: ENERGY HARVESTING TECHNOLOGIES FOR WEARABLE AND IMPLANTABLE DEVICES

IEEE ACCESS, Vol. 9, pp. 91324–91327.

Source: Web Of Science
Added: July 26, 2021

2020 journal article

Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects

APPLIED ENERGY, 262.

author keywords: Thermoelectric generators; Body heat harvesters; Flexible electronics; Thermally conductive polymers
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: March 30, 2020

2019 journal article

High Thermal Conductivity Silicone Elastomer Doped with Graphene Nanoplatelets and Eutectic GaIn Liquid Metal Alloy

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 8(6), P357–P362.

By: Y. Sargolzaeiaval n, V. Ramesh n, T. Neumann n, R. Miles n, M. Dickey n & M. Ozturk n

UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: July 15, 2019

2019 review

Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems

[Review of ]. APPLIED ENERGY, 258.

By: A. Nozariasbmarz n, H. Collins n, K. Dsouza n, M. Polash n, M. Hosseini n, M. Hyland n, J. Liu n, A. Malhotra n ...

Contributors: A. Nozariasbmarz n, H. Collins n, K. Dsouza n, M. Polash n, M. Hosseini n, M. Hyland n, J. Liu n, A. Malhotra n ...

author keywords: Self-powered devices; Body heat harvesting; Wearable technology; Thermoelectric generators; Flexible harvester
TL;DR: An overview of wearables market trends, different active and passive methods of body energy harvesting for powering low-consumption electronic devices are introduced, and challenges of device fabrication are discussed. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 27, 2020

2019 journal article

Thermoelectric generators for wearable body heat harvesting: Material and device concurrent optimization

NANO ENERGY, 67.

author keywords: Thermoelectric generators; Nanocomposites; Microwave radiation; Self-powered devices; Body heat harvesting; Wearable technology
Source: Web Of Science
Added: January 13, 2020

2017 journal article

Flexible thermoelectric generator using bulk legs and liquid metal interconnects for wearable electronics

Applied Energy, 202, 736–745.

By: F. Suarez n, D. Parekh n, C. Ladd n, D. Vashaee n, M. Dickey n & M. Öztürk n

author keywords: Thermoelectrics; Liquid metals; Eutectic gallium-indium; EGaIn; Flexible; Wearable; Body heat; Renewable; Self-powered; Thermoelectric generator; TEG
TL;DR: An entirely new approach is presented and the results suggest that this novel approach can finally produce flexible TEGs that have the potential to challenge the rigid T EGs and provide a pathway for the realization of self-powered wearable electronics. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Crossref, ORCID
Added: December 6, 2018

2017 review

Thermoelectric silicides: A review

[Review of ]. JAPANESE JOURNAL OF APPLIED PHYSICS, 56(5).

By: A. Nozariasbmarz n, A. Agarwal n, Z. Coutant n, M. Hall n, J. Liu n, R. Liu n, A. Malhotra n, P. Norouzzadeh n ...

UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Designing thermoelectric generators for self-powered wearable electronics

ENERGY & ENVIRONMENTAL SCIENCE, 9(6), 2099–2113.

By: F. Suarez n, A. Nozariasbmarz n, D. Vashaee n & M. Ozturk n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Mono layer and Few-Layer MoS2 Films onto Arbitrary Substrates

ACS NANO, 8(11), 11522–11528.

By: A. Gurarslan n, Y. Yu*, L. Su*, Y. Yu*, F. Suarez*, S. Yao*, Y. Zhu*, M. Ozturk*, Y. Zhang*, L. Cao*

author keywords: molybdenum disulfide; 2D materials; tungsten disulfide; surface energy; large scale
TL;DR: A surface-energy-assisted process that can perfectly transfer centimeter-scale monolayer and few-layer MoS2 films from original growth substrates onto arbitrary substrates with no observable wrinkles, cracks, and polymer residues is demonstrated. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms

SMALL, 7(6), 727–731.

By: A. Dhawan*, Y. Du n, D. Batchelor n, H. Wang*, D. Leonard*, V. Misra n, M. Ozturk n, M. Gerhold*, T. Vo-Dinh*

MeSH headings : Nanotechnology / methods; Nanowires
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

MICROELECTRONIC ENGINEERING, 87(11), 2358–2360.

By: E. Alptekin n & M. Ozturk n

author keywords: Schottky barrier height; Contact resistivity; Nickel; Platinum; Silicide; NiSi; PtSi; NixPt1-xSi; Sulfur
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si1-xCx Epitaxy from Disilane, Trimethylsilane, and Phosphine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H699–H704.

By: E. Alptekin n & M. Ozturk n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Erbium Silicide Formation on Si1-xCx Epitaxial Layers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383.

By: E. Alptekin n, M. Ozturk n, V. Misra n, Y. Cho*, Y. Kim* & S. Chopra*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers

IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227.

By: E. Alptekin n, C. Kirkpatrick n, V. Misra n & M. Ozturk n

author keywords: Platinum germanide; platinum germanosilicide; platinum silicide; PtGe; PtSiGe; Schottky barrier height; SiGe
TL;DR: The results show that the resistance, surface morphology, and the crystalline structure of the PtSi-Ge films are independent of the strain in the original Si-1-x-x Ge-x layer, and that PtSi<sub-x</sub>Ge-x does not influence the strains in the Si-X layer. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Schottky Barrier Height of Erbium Silicide on Si1-xCx

IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951.

By: E. Alptekin n, M. Ozturk n & V. Misra n

author keywords: Erbium; Schottky barrier; Si:C; Si1-xCx silicide
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Schottky Barrier Height of Nickel Silicide Contacts Formed on Si1-xCx Epitaxial Layers

IEEE ELECTRON DEVICE LETTERS, 30(12), 1320–1322.

By: E. Alptekin n & M. Ozturk n

author keywords: Contact resistivity; nickel; schottky barrier; silicide; Si1-xCx
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation

IEEE ELECTRON DEVICE LETTERS, 30(12), 1272–1274.

By: E. Alptekin n & M. Ozturk n

author keywords: Contact resistivity; indium (In); nickel; Schottky barrier
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333.

By: E. Alptekin n, M. Ozturk n & V. Misra n

author keywords: Contact resistance; platinum; Schottky barriers; sulfur
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 patent

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, V. Misra & S. Chopra

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

APPLIED PHYSICS LETTERS, 90(19).

By: W. Zhao n, G. Duscher n, G. Rozgonyi n, M. Zikry n, S. Chopra n & M. Ozturk n

Contributors: W. Zhao n, G. Duscher n, G. Rozgonyi n, M. Zikry n, S. Chopra n & M. Ozturk n

UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2007 journal article

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

APPLIED PHYSICS LETTERS, 91(14).

By: S. Chopra n, M. Ozturk n, V. Misra n, Z. Ren* & L. McNeil*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

APPLIED PHYSICS LETTERS, 88(20).

By: S. Chopra n, M. Ozturk n, V. Misra n, K. McGuire* & L. McNeil*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Critical thickness of heavily boron-doped silicon-germanium alloys

APPLIED PHYSICS LETTERS, 89(20).

By: S. Chopra n, M. Ozturk n, V. Misra n, K. McGuire* & L. McNeil*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap

APPLIED PHYSICS LETTERS, 87(25).

By: J. Liu n & M. Ozturk n

Source: Web Of Science
Added: August 6, 2018

2005 journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

By: Y. Lin n, M. Ozturk n, B. Chen n, S. Rhee*, J. Lee* & V. Misra n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 18(1), 112–121.

By: E. Rying, M. Ozturk n, G. Bilbro n & J. Lu*

author keywords: edge detection; in situ selectivity loss detection; rapid thermal chemical-vapor deposition; selective silicon epitaxy; wavelet transform modulus maxima
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS

IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1535–1540.

By: J. Liu n & M. Ozturk n

author keywords: contact resistance; germanosilicide; nickel; source/drain; ultra-shallow junction
Source: Web Of Science
Added: August 6, 2018

2005 patent

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.

By: C. Osburn n, I. Kim n, S. Han n, I. De*, K. Yee, S. Gannavaram*, S. Lee*, C. Lee* ...

TL;DR: The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(2), G43–G49.

By: H. Fang n, M. Ozturk n, . PA O'Neil & E. Seebauer*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

By: I. Ban*, M. Ozturk*, V. Misra*, J. Wortman*, D. Venables n & D. Maher n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 journal article

Effects of arsenic doping on chemical vapor deposition of titanium silicide

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4240–4245.

By: H. Fang n, M. Ozturk n, E. Seebauer* & D. Batchelor n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.

By: . PA O'Neil, M. Ozturk*, A. Batchelor*, M. Xu & D. Maher*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effects of oxygen on selective silicon deposition using disilane

MATERIALS LETTERS, 38(6), 418–422.

By: . PA O'Neil, M. Ozturk n, A. Batchelor n & D. Maher n

author keywords: silicon; CVD; disilane; selective silicon deposition
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.

By: . PA O'Neil, M. Ozturk*, A. Batchelor n, D. Venables n, M. Xu n & D. Maher n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.

By: . PA O'Neil, M. Ozturk*, A. Batchelor n, D. Venables n & D. Maher n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308.

By: I. Ban n & M. Ozturk n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Low thermal budget surface preparation for selective epitaxy a study on process robustness

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1557–1564.

By: S. Celik n & M. Ozturk n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Quality of selective silicon epitaxial films deposited using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.

By: . PA O'Neil, M. Ozturk*, A. Batchelor*, M. Xu* & D. Maher*

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Low thermal budget in situ surface cleaning for selective silicon epitaxy

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(10), 3602–3609.

By: S. Celik n & M. Ozturk n

Source: Web Of Science
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

By: P. ONeil n, M. Ozturk n, K. Violette n, D. Batchelor n, K. Christensen n & D. Maher n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

By: V. Li n, M. Mirabedini n, R. Kuehn n, J. Wortman n, M. Ozturk n, D. Batchelor n, K. Christensen n, D. Maher n

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1544–1551.

By: I. Ban n, M. Ozturk n & E. Demirlioglu*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1996 article

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.

By: J. Sun n, R. Bartholomew n, K. Bellur n, P. ONeil n, A. Srivastava n, K. Violette n, M. Ozturk, C. Osburn n, N. Masnari n

Source: Web Of Science
Added: August 6, 2018

1995 patent

Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & M. Sanganeria

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, D. Grider, M. Sanganeria, S. Ashburn & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 journal article

CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING

PROCEEDINGS OF THE IEEE, 81(1), 42–59.

By: N. Masnari n, . Hauser n, G. Lucovsky n, D. Maher n, R. Markunas*, M. Ozturk n, J. Wortman n

Source: Web Of Science
Added: August 6, 2018

1993 patent

Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 patent

Selective deposition of doped silion-germanium alloy on semiconductor substrate

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, D. Grider, M. Sanganeria & S. Ashburn

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

Germanium silicon dioxide gate MOSFET

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

Selective germanium deposition on silicon and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, J. Wortman & D. Grider

Source: NC State University Libraries
Added: August 6, 2018

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