Mehmet Cevdet Ozturk

A comprehensive analytical model for thermoelectric body heat harvesting incorporating the impact of human metabolism and physical activity

APPLIED ENERGY, 324.

Microporous vertically aligned CNT nanocomposites with tunable properties for use in flexible heat sinks

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 7(4).

Aerosol Spray Deposition of Liquid Metal and Elastomer Coatings for Rapid Processing of Stretchable Electronics

MICROMACHINES, 12(2).

Energy Harvesting and Storage with Soft and Stretchable Materials

[Review of ]. ADVANCED MATERIALS, 33(19).

Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler

NPJ FLEXIBLE ELECTRONICS, 5(1).

IEEE ACCESS SPECIAL SECTION EDITORIAL: ENERGY HARVESTING TECHNOLOGIES FOR WEARABLE AND IMPLANTABLE DEVICES

IEEE ACCESS, Vol. 9, pp. 91324–91327.

Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects

APPLIED ENERGY, 262.

High Thermal Conductivity Silicone Elastomer Doped with Graphene Nanoplatelets and Eutectic GaIn Liquid Metal Alloy

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 8(6), P357–P362.

Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems

[Review of ]. APPLIED ENERGY, 258.

Thermoelectric generators for wearable body heat harvesting: Material and device concurrent optimization

NANO ENERGY, 67.

Flexible thermoelectric generator using bulk legs and liquid metal interconnects for wearable electronics

Applied Energy, 202, 736–745.

Thermoelectric silicides: A review

[Review of ]. JAPANESE JOURNAL OF APPLIED PHYSICS, 56(5).

Designing thermoelectric generators for self-powered wearable electronics

ENERGY & ENVIRONMENTAL SCIENCE, 9(6), 2099–2113.

Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Mono layer and Few-Layer MoS2 Films onto Arbitrary Substrates

ACS NANO, 8(11), 11522–11528.

Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms

SMALL, 7(6), 727–731.

NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

MICROELECTRONIC ENGINEERING, 87(11), 2358–2360.

Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si1-xCx Epitaxy from Disilane, Trimethylsilane, and Phosphine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H699–H704.

Erbium Silicide Formation on Si1-xCx Epitaxial Layers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383.

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers

IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227.

Schottky Barrier Height of Erbium Silicide on Si1-xCx

IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951.

Schottky Barrier Height of Nickel Silicide Contacts Formed on Si1-xCx Epitaxial Layers

IEEE ELECTRON DEVICE LETTERS, 30(12), 1320–1322.

Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation

IEEE ELECTRON DEVICE LETTERS, 30(12), 1272–1274.

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333.

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

APPLIED PHYSICS LETTERS, 90(19).

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

APPLIED PHYSICS LETTERS, 91(14).

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

APPLIED PHYSICS LETTERS, 88(20).

Critical thickness of heavily boron-doped silicon-germanium alloys

APPLIED PHYSICS LETTERS, 89(20).

Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap

APPLIED PHYSICS LETTERS, 87(25).

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 18(1), 112–121.

Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS

IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1535–1540.

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Washington, DC: U.S. Patent and Trademark Office.

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.

Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(2), G43–G49.

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

Effects of arsenic doping on chemical vapor deposition of titanium silicide

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4240–4245.

Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.

Effects of oxygen on selective silicon deposition using disilane

MATERIALS LETTERS, 38(6), 418–422.

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.

In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308.

Low thermal budget surface preparation for selective epitaxy a study on process robustness

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1557–1564.

Quality of selective silicon epitaxial films deposited using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.

Low thermal budget in situ surface cleaning for selective silicon epitaxy

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(10), 3602–3609.

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1544–1551.

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.

Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing

Washington, DC: U.S. Patent and Trademark Office.

Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING

PROCEEDINGS OF THE IEEE, 81(1), 42–59.

Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye

Washington, DC: U.S. Patent and Trademark Office.

Selective deposition of doped silion-germanium alloy on semiconductor substrate

Washington, DC: U.S. Patent and Trademark Office.

Germanium silicon dioxide gate MOSFET

Washington, DC: U.S. Patent and Trademark Office.

Selective germanium deposition on silicon and resulting structures

Washington, DC: U.S. Patent and Trademark Office.