Works (49)

2019 | journal article

High Thermal Conductivity Silicone Elastomer Doped with Graphene Nanoplatelets and Eutectic GaIn Liquid Metal Alloy

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 8(6), P357–P362.

By: Y. Sargolzaeiaval, V. Ramesh, T. Neumann, R. Miles, M. Dickey & M. Ozturk

Source: Web Of Science
Added: July 15, 2019

2017 | review

Thermoelectric silicides: A review

Japanese Journal of Applied Physics.

By: A. Nozariasbmarz, A. Agarwal, Z. Coutant, M. Hall, J. Liu, R. Liu, A. Malhotra, P. Norouzzadeh ...

Source: NC State University Libraries
Added: August 6, 2018

2016 | journal article

Designing thermoelectric generators for self-powered wearable electronics

Energy & Environmental Science, 9(6), 2099–2113.

Source: NC State University Libraries
Added: August 6, 2018

2014 | journal article

Surface-energy-assisted perfect transfer of centimeter-scale mono layer and few-layer MoS2 films onto Arbitrary Substrates

ACS Nano, 8(11), 11522–11528.

By: A. Gurarslan, Y. Yu, L. Su, Y. Yu, F. Suarez, S. Yao, Y. Zhu, M. Ozturk, Y. Zhang, L. Cao

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Hybrid top-down and bottom-up fabrication approach for wafer-scale plasmonic nanoplatforms

Small (Weinheim An Der Bergstrasse, Germany), 7(6), 727–731.

By: A. Dhawan, Y. Du, D. Batchelor, H. Wang, D. Leonard, V. Misra, M. Ozturk, M. Gerhold, V. Tuan

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

Microelectronic Engineering, 87(11), 2358–2360.

By: E. Alptekin & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Ultrahigh vacuum chemical vapor deposition of doped and intrinsic Si1-xCx epitaxy from disilane, trimethylsilane, and phosphine

Journal of the Electrochemical Society, 157(6), H699–704.

By: E. Alptekin & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Erbium silicide formation on Si1-xCx epitaxial layers

Journal of the Electrochemical Society, 156(5), H378–383.

By: E. Alptekin, M. Ozturk, V. Misra, Y. Cho, Y. Kim & S. Chopra

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Platinum germanosilicide contacts formed on strained and relaxed Si1-xGex layers

IEEE Transactions on Electron Devices, 56(6), 1220–1227.

By: E. Alptekin, C. Kirkpatrick, V. Misra & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Schottky barrier height of erbium silicide on Si1-xCx

IEEE Electron Device Letters, 30(9), 949–951.

By: E. Alptekin, M. Ozturk & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Schottky barrier height of nickel silicide contacts formed on Si1-xCx epitaxial layers

IEEE Electron Device Letters, 30(12), 1320–1322.

By: E. Alptekin & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Tuning of the nickel silicide schottky barrier height on P-type silicon by indium implantation

IEEE Electron Device Letters, 30(12), 1272–1274.

By: E. Alptekin & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Tuning of the platinum silicide schottky barrier height on n-type silicon by sulfur segregation

IEEE Electron Device Letters, 30(4), 331–333.

By: E. Alptekin, M. Ozturk & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, V. Misra & S. Chopra

Source: NC State University Libraries
Added: August 6, 2018

2007 | patent

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

Applied Physics Letters, 90(19).

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

Applied Physics Letters, 91(14).

By: S. Chopra, M. Ozturk, V. Misra, Z. Ren & L. McNeil

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

Applied Physics Letters, 88(20).

By: S. Chopra, M. Ozturk, V. Misra, K. McGuire & L. McNeil

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Critical thickness of heavily boron-doped silicon-germanium alloys

Applied Physics Letters, 89(20).

By: S. Chopra, M. Ozturk, V. Misra, K. McGuire & L. McNeil

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap

Applied Physics Letters, 87(25).

By: J. Liu & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

Applied Physics Letters, 87(7).

By: Y. Lin, M. Ozturk, B. Chen, S. Rhee, J. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets

IEEE Transactions on Semiconductor Manufacturing, 18(1), 112–121.

By: E. Rying, M. Ozturk, G. Bilbro & J. Lu

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS

IEEE Transactions on Electron Devices, 52(7), 1535–1540.

By: J. Liu & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2005 | patent

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2004 | patent

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2004, March 23). Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM Journal of Research and Development, 46(2-3), 299–315.

By: C. Osburn, I. Kim, S. Han, I. De, K. Yee, S. Gannavaram, S. Lee, C. Lee ...

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si

Journal of the Electrochemical Society, 148(2), G43–49.

By: H. Fang, M. Ozturk, P. O'Neil & E. Seebauer

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Effects of arsenic doping on chemical vapor deposition of titanium silicide

Journal of the Electrochemical Society, 146(11), 4240–4245.

By: H. Fang, M. Ozturk, E. Seebauer & D. Batchelor

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Effects of oxygen during selective silicon Epitaxial growth using disilane and chlorine

Journal of the Electrochemical Society, 146(6), 2344–2352.

By: P. O'Neil, M. Ozturk, A. Batchelor, M. Xu & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Effects of oxygen on selective silicon deposition using disilane

Materials Letters, 38(6), 418–422.

By: P. O'Neil, M. Ozturk, A. Batchelor & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

Journal of the Electrochemical Society, 146(8), 3070–3078.

By: P. O'Neil, M. Ozturk, A. Batchelor, D. Venables, M. Xu & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

Journal of the Electrochemical Society, 146(8), 3079–3086.

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

In situ phosphorus doping during silicon epitaxy in an ultra high vacuum rapid thermal chemical vapor deposition reactor

Journal of the Electrochemical Society, 146(11), 4303–4308.

By: I. Ban & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Low thermal budget surface preparation for selective epitaxy a study on process robustness

Journal of the Electrochemical Society, 146(4), 1557–1564.

By: S. Celik & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Quality of selective silicon Epitaxial films deposited using disilane and chlorine

Journal of the Electrochemical Society, 146(6), 2337–2343.

By: P. O'Neil, M. Ozturk, A. Batchelor, M. Xu & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

Journal of the Electrochemical Society, 146(3), 1189–1196.

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Low thermal budget in situ surface cleaning for selective silicon epitaxy

Journal of the Electrochemical Society, 145(10), 3602–3609.

By: S. Celik & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

1997 | conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

In ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3) (pp. 571–585). Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

Journal of the Electrochemical Society, 144(9), 3309–3315.

By: P. O'Neil, M. Ozturk, K. Violette, D. Batchelor, K. Christensen & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

By: V. Li, M. Mirabedini, R. Kuehn, J. Wortman, M. Ozturk, D. Batchelor, K. Christensen, D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels

IEEE Transactions on Electron Devices, 44(9), 1544–1551.

By: I. Ban, M. Ozturk & E. Demirlioglu

Source: NC State University Libraries
Added: August 6, 2018

1996 | conference paper

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

In Rapid thermal and integrated processing V: Symposium held April 8-12, 1996, San Francisco, California, U.S.A. (Materials Research Society symposium; 429) (pp. 343–347). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

1995 | patent

Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & M. Sanganeria

Source: NC State University Libraries
Added: August 6, 2018

1994 | patent

Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, D. Grider, M. Sanganeria, S. Ashburn & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 | journal article

Center for Advanced Electronic Materials Processing

Proceedings of the IEEE, 81(1), 42–59.

By: N. Masnari, J. Hauser, G. Lucovsky, D. Maher, R. Markunas, M. Ozturk, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 | patent

Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 | patent

Selective deposition of doped silion-germanium alloy on semiconductor substrate

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, D. Grider, M. Sanganeria & S. Ashburn

Source: NC State University Libraries
Added: August 6, 2018

1992 | patent

Germanium silicon dioxide gate MOSFET

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1992 | patent

Selective germanium deposition on silicon and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, J. Wortman & D. Grider

Source: NC State University Libraries
Added: August 6, 2018