@article{wagener_zhang_rozgonyi_seacrist_ries_2007, title={Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces}, volume={90}, number={11}, journal={Applied Physics Letters}, author={Wagener, M. C. and Zhang, R. H. and Rozgonyi, G. A. and Seacrist, M. and Ries, M.}, year={2007} }
 @article{wagener_seacrist_rozgonyi_2007, title={Passivation of hybrid-orientation direct silicon bonded interfaces}, volume={401}, ISSN={["1873-2135"]}, DOI={10.1016/j.physb.2007.09.022}, abstractNote={This paper reports on the effect hydrogenation has on the electrical properties of hybrid-orientation (1 1 0)/(1 0 0) direct silicon bonded interfaces. Temperature-dependent capacitance measurements and deep-level transient spectroscopy were used to evaluate the distribution of interface states following hydrogenation. Although the overall interface charge remained nearly unchanged, the interface state distribution was significantly altered, changing from a broad band of states to a narrow energy distribution positioned near mid-gap.}, journal={PHYSICA B-CONDENSED MATTER}, author={Wagener, Magnus C. and Seacrist, Mike and Rozgonyi, George A.}, year={2007}, month={Dec}, pages={564–567} }