Works (10)
Updated: July 5th, 2023 15:43
2016 journal article
Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor
IEEE TRANSACTIONS ON POWER ELECTRONICS, 32(8), 6381–6393.
author keywords: Emitter turn-OFF thyristor; gate turn-OFF thyristor (GTO); high voltage; safe operating area (SOA); silicon (Si); silicon carbide
open access via doi.org (publisher)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2015 conference paper
22 kV SiC emitter turn-off (ETO) thyristor and Its dynamic performance including SOA
Proceedings of the international symposium on power semiconductor, 277–280.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2015 conference paper
4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab
2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015), 1051–1057.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2015 conference paper
Excess carrier mapping technique -A new parameter extraction method for 4H-SiC ambipolar power devices
WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 51–55.
Source: NC State University Libraries
Added: August 6, 2018
2015 conference paper
High voltage Si/SiC hybrid switch: An ideal next step for SiC
Proceedings of the international symposium on power semiconductor, 289–292.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2015 conference paper
Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor
WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2014 journal article
An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs
An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs. SOLID-STATE ELECTRONICS, 93, 27–39.
author keywords: 4H-SiC; IGBT; Injection efficiency; Injection capability; Analytical model; Parameter extraction
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2013 conference paper
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2012 conference paper
An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496–1502.
Source: NC State University Libraries
Added: August 6, 2018
2012 conference paper
Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245–2248.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
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