Works (10)
2016 article
Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor
Song, X., Huang, A. Q., Lee, M.-C., & Peng, C. (2016, October 12). IEEE Transactions on Power Electronics.
2015 article
22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA
Song, X., Huang, A. Q., Lee, M., Peng, C., Cheng, L., O'Brien, H., … Palmour, J. (2015, May 1).
2015 article
4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab
Lee, M.-C., Wang, G., & Huang, A. Q. (2015, March 1).
2015 conference paper
Excess carrier mapping technique -A new parameter extraction method for 4H-SiC ambipolar power devices
WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 51–55.
2015 article
High voltage Si/SiC hybrid switch: An ideal next step for SiC
Song, X., Huang, A. Q., Lee, M.-C., & Peng, C. (2015, May 1).
2015 article
Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor
Liang, L., Huang, A. Q., Sung, W., Lee, M.-C., Song, X., Peng, C., … Scozzie, C. (2015, November 1).
2014 article
An injection efficiency model to characterize the injection capability and turn-off speed for >10kV 4H-SiC IGBTs
Lee, M.-C., & Huang, A. Q. (2014, January 3). Solid-State Electronics.
2013 article
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
Lee, M.-C., Huang, X., Huang, A., & Brunt, E. V. (2013, October 1).
2012 article
An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis
Lee, M.-C., Huang, X., & Huang, A. Q. (2012, September 1).
2012 article
Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress
Huang, X., Wang, G., Lee, M.-C., & Huang, A. Q. (2012, September 1).