Works (10)

Updated: July 5th, 2023 15:43

2017 journal article

Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor

IEEE TRANSACTIONS ON POWER ELECTRONICS, 32(8), 6381–6393.

By: X. Song n, A. Huang n, M. Lee n & C. Peng n

author keywords: Emitter turn-OFF thyristor; gate turn-OFF thyristor (GTO); high voltage; safe operating area (SOA); silicon (Si); silicon carbide
Source: Web Of Science
Added: August 6, 2018

2015 conference paper

22 kV SiC emitter turn-off (ETO) thyristor and Its dynamic performance including SOA

Proceedings of the international symposium on power semiconductor, 277–280.

By: X. Song n, A. Huang n, M. Lee n, C. Peng n, L. Cheng n, H. O'Brien*, A. Ogunniyi*, C. Scozzie*, J. Palmour*

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab

2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015), 1051–1057.

By: M. Lee n, G. Wang n & A. Huang n

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Excess carrier mapping technique -A new parameter extraction method for 4H-SiC ambipolar power devices

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 51–55.

By: M. Lee, X. Song & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

High voltage Si/SiC hybrid switch: An ideal next step for SiC

Proceedings of the international symposium on power semiconductor, 289–292.

By: X. Song n, A. Huang n, M. Lee n & C. Peng n

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.

By: L. Liang n, A. Huang n, W. Sung n, M. Lee n, X. Song n, C. Peng n, L. Cheng*, J. Palmour*, C. Scozzie

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs

An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs. SOLID-STATE ELECTRONICS, 93, 27–39.

By: M. Lee n & A. Huang n

author keywords: 4H-SiC; IGBT; Injection efficiency; Injection capability; Analytical model; Parameter extraction
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.

By: M. Lee n, X. Huang n, A. Huang n & E. Brunt*

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496–1502.

By: M. Lee n, X. Huang n & A. Huang n

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245–2248.

By: X. Huang n, G. Wang n, M. Lee n & A. Huang n

Source: NC State University Libraries
Added: August 6, 2018

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