Works (10)

2017 journal article

Theoretical and experimental study of 22 kV SiC emitter turn-OFF (ETO) thyristor

IEEE Transactions on Power Electronics, 32(8), 6381–6393.

By: X. Song, A. Huang, M. Lee & C. Peng

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

22 kV SiC emitter turn-off (ETO) thyristor and Its dynamic performance including SOA

Proceedings of the international symposium on power semiconductor, 277–280.

By: X. Song, A. Huang, M. Lee, C. Peng, L. Cheng, H. O'Brien, A. Ogunniyi, C. Scozzie, J. Palmour

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab

2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015), 1051–1057.

By: M. Lee, G. Wang & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Excess carrier mapping technique -A new parameter extraction method for 4H-SiC ambipolar power devices

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 51–55.

By: M. Lee, X. Song & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

High voltage Si/SiC hybrid switch: An ideal next step for SiC

Proceedings of the international symposium on power semiconductor, 289–292.

By: X. Song, A. Huang, M. Lee & C. Peng

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 192–195.

By: L. Liang, A. Huang, W. Sung, M. Lee, X. Song, C. Peng, L. Cheng, J. Palmour, C. Scozzie

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs

An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs. Solid-State Electronics, 93, 27–39.

By: M. Lee & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.

By: M. Lee, X. Huang, A. Huang & E. Brunt

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496–1502.

By: M. Lee, X. Huang & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245–2248.

By: X. Huang, G. Wang, M. Lee & A. Huang

Source: NC State University Libraries
Added: August 6, 2018