@article{song_huang_lee_peng_2017, title={Theoretical and experimental study of 22 kV SiC emitter turn-OFF (ETO) thyristor}, volume={32}, DOI={10.1109/tpel.2016.2616841}, number={8}, journal={IEEE Transactions on Power Electronics}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C.}, year={2017}, pages={6381–6393} }
 @inproceedings{song_huang_lee_peng_cheng_o'brien_ogunniyi_scozzie_palmour_2015, title={22 kV SiC emitter turn-off (ETO) thyristor and Its dynamic performance including SOA}, DOI={10.1109/ispsd.2015.7123443}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C. and Cheng, L. and O'Brien, H. and Ogunniyi, A. and Scozzie, C. and Palmour, J.}, year={2015}, pages={277–280} }
 @inproceedings{lee_wang_huang_2015, title={4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab}, DOI={10.1109/apec.2015.7104478}, booktitle={2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015)}, author={Lee, M. C. and Wang, G. Y. and Huang, A. Q.}, year={2015}, pages={1051–1057} }
 @inproceedings{lee_song_huang_2015, title={Excess carrier mapping technique -A new parameter extraction method for 4H-SiC ambipolar power devices}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Lee, M. C. and Song, X. Q. and Huang, A.}, year={2015}, pages={51–55} }
 @inproceedings{song_huang_lee_peng_2015, title={High voltage Si/SiC hybrid switch: An ideal next step for SiC}, DOI={10.1109/ispsd.2015.7123446}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C.}, year={2015}, pages={289–292} }
 @inproceedings{liang_huang_sung_lee_song_peng_cheng_palmour_scozzie_2015, title={Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor}, DOI={10.1109/wipda.2015.7369275}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Liang, L. and Huang, A. Q. and Sung, W. J. and Lee, M. C. and Song, X. Q. and Peng, C. and Cheng, L. and Palmour, J. and Scozzie, C.}, year={2015}, pages={192–195} }
 @article{lee_huang_2014, title={An injection efficiency model to characterize the injection capability and turn-off speed for > 10 kV 4H-SiC IGBTs}, volume={93}, DOI={10.1016/j.sse.2013.12.008}, journal={Solid-state Electronics}, author={Lee, M. C. and Huang, A. Q.}, year={2014}, pages={27–39} }
 @inproceedings{lee_huang_huang_brunt_2013, title={An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs}, DOI={10.1109/wipda.2013.6695559}, booktitle={2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, author={Lee, M. C. and Huang, X. and Huang, A. and Brunt, E.}, year={2013}, pages={44–47} }
 @inproceedings{lee_huang_huang_2012, title={An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis}, DOI={10.1109/ecce.2012.6342637}, booktitle={2012 IEEE Energy Conversion Congress and Exposition (ECCE)}, author={Lee, M. C. and Huang, X. and Huang, A. Q.}, year={2012}, pages={1496–1502} }
 @inproceedings{huang_wang_lee_huang_2012, title={Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress}, DOI={10.1109/ecce.2012.6342436}, booktitle={2012 IEEE Energy Conversion Congress and Exposition (ECCE)}, author={Huang, X. and Wang, G. Y. and Lee, M. C. and Huang, A. Q.}, year={2012}, pages={2245–2248} }