Marc Patrick Hoffmann

Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., … Sitar, Z. (2016). High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers. JOURNAL OF APPLIED PHYSICS, 120(13). https://doi.org/10.1063/1.4963831

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. JOURNAL OF APPLIED PHYSICS, 120(18). https://doi.org/10.1063/1.4967397

Mohn, S., Stolyarchuk, N., Markurt, T., Kirste, R., Hoffmann, M. P., Collazo, R., … Albrecht, M. (2016). Polarity Control in Group-III Nitrides beyond Pragmatism. PHYSICAL REVIEW APPLIED, 5(5). https://doi.org/10.1103/physrevapplied.5.054004

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Bain, L. E., Hoffmann, M. P., Bryan, I., Collazo, R., & Ivanisevic, A. (2015). Adsorption and adhesion of common serum proteins to nanotextured gallium nitride. NANOSCALE, 7(6), 2360–2365. https://doi.org/10.1039/c4nr06353h

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). Growth and characterization of AlxGa1-xN lateral polarity structures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042. https://doi.org/10.1002/pssa.201431740

Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015). Optical characterization of Al- and N-polar AlN waveguides for integrated optics. APPLIED PHYSICS EXPRESS, 8(4). https://doi.org/10.7567/apex.8.042603

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Shelton, C. T., Sachet, E., Paisley, E. A., Hoffmann, M. P., Rajan, J., Collazo, R., … Maria, J.-P. (2014). Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures. JOURNAL OF APPLIED PHYSICS, 115(4). https://doi.org/10.1063/1.4863120

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014). Properties of AlN based lateral polarity structures. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264. https://doi.org/10.1002/pssc.201300287

Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., … Sitar, Z. (2013). Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements. Journal of Applied Physics, 113(10), 103504. https://doi.org/10.1063/1.4794094

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., … Sitar, Z. (2013). Ge doped GaN with controllable high carrier concentration for plasmonic applications. Applied Physics Letters, 103(24), 242107. https://doi.org/10.1063/1.4848555

Skuridina, D., Dinh, D. V., Lacroix, B., Ruterana, P., Hoffmann, M., Sitar, Z., … Vogt, P. (2013). Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy. Journal of Applied Physics, 114(17).

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012). On the origin of the 265 nm absorption band in AlN bulk crystals. APPLIED PHYSICS LETTERS, 100(19). https://doi.org/10.1063/1.4717623

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., … Sitar, Z. (2012). Optical signature of Mg-doped GaN: Transfer processes. PHYSICAL REVIEW B, 86(7). https://doi.org/10.1103/physrevb.86.075207

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation. Quantum sensing and nanophotonic devices x, 8631.

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Point defect management in GaN by Fermi-level control during growth. Gallium nitride materials and devices ix, 8986.