@article{markham_rabbani_hsiao_wierer_kish_2025, title={Visible-spectrum (405-505 nm) low-temperature-deposited deuterated (D) SiN<sub>x</sub>-SiO<sub>y</sub> waveguides}, volume={126}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/5.0244182}, DOI={10.1063/5.0244182}, abstractNote={Deuterated silicon nitride (SiNx:D)–silicon oxide (SiOy:D) waveguides grown by low-temperature (300 °C) plasma-enhanced chemical vapor deposition (PECVD) operating in the violet (405 nm) to cyan (505 nm) visible spectrum are demonstrated. The waveguides exhibit low insertion losses ranging from 3.2 dB/cm (405 nm) to 0.8 dB/cm (505 nm). The performance of these waveguides is competitive to conventional SiNx waveguides that require significantly higher processing temperatures (≥800 °C). The low-temperature deposition and low loss of these waveguides enable advanced heterogeneous integration schemes for visible-spectrum photonic integrated circuits.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Markham, Keith and Rabbani, Mohammad and Hsiao, Fu-Chen and Wierer, Jonathan and Kish, Fred}, year={2025}, month={Jan} }