@article{franke_hoffmann_kirste_bobea_tweedie_kaess_gerhold_collazo_sitar_2016, title={High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers}, volume={120}, DOI={10.1063/1.4963831}, number={13}, journal={Journal of Applied Physics}, author={Franke, A. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Tweedie, J. and Kaess, F. and Gerhold, M. and Collazo, R. and Sitar, Z.}, year={2016} }
 @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, DOI={10.1063/1.4967397}, number={18}, journal={Journal of Applied Physics}, author={Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and et al.}, year={2016} }
 @inproceedings{franke_hoffmann_hernandez-balderrama_kaess_bryan_washiyama_bobea_tweedie_kirste_gerhold_et al._2016, title={Strain engineered high reflectivity DBRs in the deep UV}, volume={9748}, DOI={10.1117/12.2211700}, booktitle={Gallium nitride materials and devices xi}, author={Franke, A. and Hoffmann, P. and Hernandez-Balderrama, L. and Kaess, F. and Bryan, I. and Washiyama, S. and Bobea, M. and Tweedie, J. and Kirste, R. and Gerhold, M. and et al.}, year={2016} }
 @article{hoffmann_kirste_mita_guo_tweedie_bobea_bryan_bryan_gerhold_collazo_et al._2015, title={Growth and characterization of AlxGa1-xN lateral polarity structures}, volume={212}, DOI={10.1002/pssa.201431740}, number={5}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Hoffmann, M. P. and Kirste, R. and Mita, S. and Guo, W. and Tweedie, J. and Bobea, M. and Bryan, I. and Bryan, Z. and Gerhold, M. and Collazo, R. and et al.}, year={2015}, pages={1039–1042} }
 @article{rigler_buh_hoffmann_kirste_bobea_mita_gerhold_collazo_sitar_zgonik_2015, title={Optical characterization of Al- and N-polar AlN waveguides for integrated optics}, volume={8}, DOI={10.7567/apex.8.042603}, number={4}, journal={Applied Physics Express}, author={Rigler, M. and Buh, J. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2015} }
 @article{bryan_bryan_bobea_hussey_kirste_sitar_collazo_2014, title={Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films}, volume={115}, DOI={10.1063/1.4870284}, number={13}, journal={Journal of Applied Physics}, author={Bryan, Z. and Bryan, I. and Bobea, M. and Hussey, L. and Kirste, R. and Sitar, Z. and Collazo, R.}, year={2014} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, DOI={10.1063/1.4903058}, number={22}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Gaddy, B. E. and Reddy, P. and Hussey, L. and Bobea, M. and Guo, W. and Hoffmann, M. and Kirste, R. and Tweedie, J. and et al.}, year={2014} }
 @article{sochacki_bryan_amilusik_bobea_fijalkowski_bryan_lucznik_collazo_weyher_kucharski_et al._2014, title={HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties}, volume={394}, DOI={10.1016/j.jcrysgro.2014.02.020}, journal={Journal of Crystal Growth}, author={Sochacki, T. and Bryan, Z. and Amilusik, M. and Bobea, M. and Fijalkowski, M. and Bryan, I. and Lucznik, B. and Collazo, R. and Weyher, J. L. and Kucharski, R. and et al.}, year={2014}, pages={55–60} }
 @article{bryan_bryan_bobea_hussey_kirste_collazo_sitar_2014, title={Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition}, volume={116}, DOI={10.1063/1.4897233}, number={13}, journal={Journal of Applied Physics}, author={Bryan, I. and Bryan, Z. and Bobea, M. and Hussey, L. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014} }
 @article{hussey_white_kirste_mita_bryan_guo_osterman_haidet_bryan_bobea_et al._2014, title={Sapphire decomposition and inversion domains in N-polar aluminum nitride}, volume={104}, DOI={10.1063/1.4862982}, number={3}, journal={Applied Physics Letters}, author={Hussey, L. and White, R. M. and Kirste, R. and Mita, S. and Bryan, I. and Guo, W. and Osterman, K. and Haidet, B. and Bryan, Z. and Bobea, M. and et al.}, year={2014} }
 @article{guo_bryan_xie_kirste_mita_bryan_hussey_bobea_haidet_gerhold_et al._2014, title={Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates}, volume={115}, DOI={10.1063/1.4868678}, number={10}, journal={Journal of Applied Physics}, author={Guo, W. and Bryan, Z. and Xie, J. Q. and Kirste, R. and Mita, S. and Bryan, I. and Hussey, L. and Bobea, M. and Haidet, B. and Gerhold, M. and et al.}, year={2014} }
 @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi level control of point defects during growth of Mg-doped GaN}, volume={42}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={Journal of Electronic Materials}, author={Bryan, Z. and Hoffmann, M. and Tweedie, J. and Kirste, R. and Callsen, G. and Bryan, I. and Rice, A. and Bobea, M. and Mita, S. and Xie, J. Q. and et al.}, year={2013}, pages={815–819} }
 @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, DOI={10.1063/1.4848555}, number={24}, journal={Applied Physics Letters}, author={Kirste, R. and Hoffmann, M. P. and Sachet, E. and Bobea, M. and Bryan, Z. and Bryan, I. and Nenstiel, C. and Hoffmann, A. and Maria, J. P. and Collazo, R. and et al.}, year={2013} }
 @article{rigler_zgonik_hoffmann_kirste_bobea_collazo_sitar_mita_gerhold_2013, title={Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4800554}, number={22}, journal={Applied Physics Letters}, author={Rigler, M. and Zgonik, M. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Collazo, R. and Sitar, Z. and Mita, S. and Gerhold, M.}, year={2013} }
 @article{bryan_rice_hussey_bryan_bobea_mita_xie_kirste_collazo_sitar_2013, title={Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4792694}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Rice, A. and Hussey, L. and Bryan, Z. and Bobea, M. and Mita, S. and Xie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2013} }
 @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, DOI={10.1063/1.4798352}, number={12}, journal={Journal of Applied Physics}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013} }