Milena Rebeca Bobea

Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., … Sitar, Z. (2016). High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers. JOURNAL OF APPLIED PHYSICS, 120(13). https://doi.org/10.1063/1.4963831

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. JOURNAL OF APPLIED PHYSICS, 120(18). https://doi.org/10.1063/1.4967397

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). Growth and characterization of AlxGa1-xN lateral polarity structures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042. https://doi.org/10.1002/pssa.201431740

Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015). Optical characterization of Al- and N-polar AlN waveguides for integrated optics. APPLIED PHYSICS EXPRESS, 8(4). https://doi.org/10.7567/apex.8.042603

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014). Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films. JOURNAL OF APPLIED PHYSICS, 115(13). https://doi.org/10.1063/1.4870284

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., … Sitar, Z. (2014). HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties. JOURNAL OF CRYSTAL GROWTH, 394, 55–60. https://doi.org/10.1016/j.jcrysgro.2014.02.020

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014). Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 116(13). https://doi.org/10.1063/1.4897233

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014). Sapphire decomposition and inversion domains in N-polar aluminum nitride. APPLIED PHYSICS LETTERS, 104(3). https://doi.org/10.1063/1.4862982

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014). Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. JOURNAL OF APPLIED PHYSICS, 115(10). https://doi.org/10.1063/1.4868678

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., … Sitar, Z. (2013). Ge doped GaN with controllable high carrier concentration for plasmonic applications. Applied Physics Letters, 103(24), 242107. https://doi.org/10.1063/1.4848555

Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., … Gerhold, M. (2013). Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(22). https://doi.org/10.1063/1.4800554

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013). Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(6). https://doi.org/10.1063/1.4792694

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013). X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN. JOURNAL OF APPLIED PHYSICS, 113(12). https://doi.org/10.1063/1.4798352