Michelle Leonard

Also known as: Michelle T. Leonard; Michelle Turner Leonard
Libraries

https://orcid.org/0000-0001-9261-1180

Engineering, STEM, Research, Semiconductors

Engineer and Engineering Librarian/Education who is passionate about supporting the development new engineering talent, especially for those from underrepresented groups.

2001 patent

Group III nitride optoelectronic device formed on a silicon carbide substrate.

https://patents.google.com/patent/US6201262B1/en?inventor=Michelle+Turner+Leonard&assignee=Michelle+Turner+Leonard

By: E. A, K. H, D. M, L. T, H. K, D. M, K. S

Event: at US944547 07 Oct 1997 US399445 20 Sep 1999 US718654 22 Nov 2000 US718958 22 Nov 2000 US966789 28 Sep 2001

Source: ORCID
Added: October 29, 2020

2000 conference paper

GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Proceedings of SPIE - The International Society for Optical Engineering, 3948, 273–282.

By: G. Bulman, H. Kong & M. Leonard

Event: at USA

Source: ORCID
Added: August 21, 2020

2000 conference paper

Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide

Materials Science Forum, 338. http://www.scopus.com/inward/record.url?eid=2-s2.0-17744407378&partnerID=MN8TOARS

By: S. Sheppard, K. Doverspike, M. Leonard, W. Pribble, S. Allen & J. Palmour

Source: ORCID
Added: August 21, 2020

1998 book

Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes

In Semiconductors and Semimetals (Vol. 52, pp. 283–306).

By: J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, D. Waltz, C. Carter

Source: ORCID
Added: August 21, 2020

1998 conference paper

Gain characteristics of InGaN/GaN quantum well diode lasers

Conference on Lasers and Electro-Optics Europe - Technical Digest, 224.

By: Y. Song, M. Kuball, A. Nurmikko, G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, M. Leonard ...

Event: at Washington, DC, USA

Source: ORCID
Added: August 21, 2020

1998 journal article

Gain characteristics of InGaN/GaN quantum well diode lasers

Applied Physics Letters, 72(12), 1418–1420.

By: Y. Song, M. Kuball, A. Nurmikko, G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, M. Leonard ...

Source: ORCID
Added: August 21, 2020

1998 conference paper

Gain spectroscopy on InGaN/GaN quantum well laser diodes

Conference on Lasers and Electro-Optics Europe - Technical Digest, 66. http://www.scopus.com/inward/record.url?eid=2-s2.0-0031626264&partnerID=MN8TOARS

By: M. Kuball, Y. Song, A. Nurmikko, G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, M. Leonard ...

Event: at Glasgow, Scotland

Source: ORCID
Added: August 21, 2020

1998 conference paper

InGaN/GaN lasers grown on SiC

Proceedings of SPIE - The International Society for Optical Engineering, 3284, 82–93.

By: K. Doverspike, G. Bulman, S. Sheppard, H. Kong, M. Leonard, H. Dieringer, J. Edmond, K. More ...

Event: at USA

Source: ORCID
Added: August 21, 2020

1998 journal article

Nitride-Based Emitters on SiC Substrates

Materials Science Forum.

By: J. Edmond, G. Bulman, H. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S. Sheppard ...

Source: ORCID
Added: February 18, 2021

1998 conference paper

Nitride-based emitters on SiC substrates

Materials Science Forum, 264-268(pt 2), 1421–1424.

By: J. Edmond, G. Bulman, H. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S. Sheppard ...

Event: at Switzerland

Source: ORCID
Added: August 21, 2020

1998 conference paper

The first nitride laser diode on silicon carbide

Nitride Semiconductors Symposium, 1-5 Dec. 1997, 1179–1184. Warrendale, PA, USA: Mater. Res. Soc.

By: J. Brown, J. Swindell, M. Johnson, Z. Yu, J. Schetzina, G. Bulman, K. Doverspike, S. Sheppard ...

Event: at Warrendale, PA, USA

Source: ORCID
Added: October 29, 2020

1997 journal article

Dynamics of photoexcited carriers in AlxGa1-xN/GaN double heterostructures

Journal of Applied Physics, 82(6), 3158–3160.

By: W. Shan, S. Xu, B. Little, X. Xie, J. Song, G. Bulman, H. Kong, M. Leonard, S. Krishnankutty

Source: ORCID
Added: August 21, 2020

1997 conference paper

First nitride laser diode on silicon carbide

Materials Research Society Symposium - Proceedings, 482, 1179–1184.

By: J. Brown, J. Swindell, M. Johnson, Z. Yu, J. Schetzina, G. Bulman, K. Doverspike, S. Sheppard ...

Event: at Boston, MA, USA

Source: ORCID
Added: August 21, 2020

1997 journal article

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Journal of Crystal Growth, 175-176(PART 1), 72–78.

By: M. Johnson, W. Hughes, W. Rowland, J. Cook, J. Schetzina, M. Leonard, H. Kong, J. Edmond, J. Zavada

Sources: ORCID, NC State University Libraries
Added: August 6, 2018

1997 conference paper

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996, 195–198. Bristol, UK: IOP Publishing.

By: M. Leonard

Event: at Bristol, UK

Source: ORCID
Added: October 29, 2020

1997 conference paper

MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources

Materials Research Society Symposium - Proceedings, 449, 271–276. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS

By: M. Johnson, Z. Yu, C. Boney, W. Rowland, W. Hughes, J. Cook, J. Schetzina, N. El-Masry ...

Source: ORCID
Added: August 21, 2020

1997 conference paper

Nitride-based emitters on SiC substrates

Proceedings of SPIE - The International Society for Optical Engineering, 3002, 2–10.

By: J. Edmond, H. Kong, M. Leonard, K. Doverspike, G. Bulman, W. Weeks, K. Irvine, D. Vladimir

Event: at USA

Source: ORCID
Added: August 21, 2020

1997 conference paper

Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN

Materials Research Society Symposium - Proceedings, 449, 713–718. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS

By: B. Skromme, H. Zhao, B. Goldenberg, H. Kong, M. Leonard, G. Bulman, C. Abernathy, S. Pearton

Source: ORCID
Added: August 21, 2020

1997 conference paper

Status of nitride based light emitting and laser diodes on SiC

Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1169–1178. Boston, MA, USA: MRS.

By: M. Leonard

Event: at Boston, MA, USA

Source: ORCID
Added: October 29, 2020

1997 journal article

Strain determination in heteroepitaxial GaN

Applied Physics Letters, 71(6), 829–831.

By: B. Skromme, H. Zhao, D. Wang, H. Kong, M. Leonard, G. Bulman, R. Molnar

Source: ORCID
Added: August 21, 2020

1997 journal article

The First Nitride Laser Diode on Silicon Carbide

MRS Proceedings.

By: J. Brown, J. Swindell, M. Johnson, Z. Yu, J. Schetzina, G. Bulman, K. Doverspike, S. Sheppard ...

Source: ORCID
Added: February 18, 2021

1996 conference paper

AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates

Materials Research Society Symposium - Proceedings, 395, 903–907. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029726099&partnerID=MN8TOARS

By: H. Kong, M. Leonard, G. Bulman, G. Negley & J. Edmond

Event: at Pittsburgh, PA, USA

Source: ORCID
Added: August 21, 2020

1996 journal article

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied Physics Letters, 69(6), 740–742.

By: W. Shan, A. Fischer, J. Song, G. Bulman, H. Kong, M. Leonard, W. Perry, M. Bremser, R. Davis

Source: ORCID
Added: August 21, 2020

1996 conference paper

Recent progress in AlGaN-GaN laser structures on 6H-SiC

Physics and Simulation of Optoelectronic Devices IV, 29 Jan.-2 Feb. 1996, 2693, 57–63. USA: SPIE-Int. Soc. Opt. Eng.

By: G. Bulman, J. Edmond, V. Dmitriev, H. Kong, M. Leonard, K. Irvine, V. Nikolaev, A. Zubrilov, D. Tsvetkov

Event: at USA

Source: ORCID
Added: October 29, 2020

1996 conference paper

Recent progress in AlGaN/GaN laser structures on 6H-SiC

Proceedings of SPIE - The International Society for Optical Engineering, 2693, 57–63. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029766677&partnerID=MN8TOARS

By: G. Bulman, J. Edmond, V. Dmitriev, H. Kong, M. Leonard, K. Irvine, V. Nikolaev, A. Zubrilov, D. Tsvetkov

Source: ORCID
Added: August 21, 2020

1996 conference paper

The state of SiC:GaN-based blue LEDs

Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995, 991–994. Bristol, UK: IOP Publishing.

By: J. Edmond, H. Kong, M. Leonard, G. Bulman & G. Negley

Event: at Bristol, UK

Source: ORCID
Added: October 29, 2020

1995 journal article

Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition

Journal of Electronic Materials, 24(5), 483–489.

By: N. Karam, R. Sudharsanan, A. Mastrovito, M. Sanfacon, F. Smith, M. Leonard, N. El-Masry

Event: at USA

Source: ORCID
Added: August 21, 2020

1995 conference paper

Recent progress in GaN/SiC LEDs and photopumped lasers

LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 30-31 Oct. 1995, vol.2, 100–101.

By: G. Bulman, J. Edmond, H. Kong, M. Leonard, V. Dmitriev, K. Irvine, V. Nikolaev, A. Zubrilov, D. Tsvetkov

Event: at New York, NY, USA

Source: ORCID
Added: October 29, 2020

1995 journal article

Selenium doping of GalnP by atomic layer epitaxy

Journal of Electronic Materials, 24(2), 75–78.

By: D. Jung, M. Leonard, N. El-Masry & S. Bedair

Source: ORCID
Added: August 21, 2020

1994 conference paper

Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates

Proceedings of SPIE - The International Society for Optical Engineering, 2228, 118–129.

By: N. Karam, F. Smith, R. Sudharsanan, A. Mastrovito, J. Daly, M. Sanfacon, M. Leonard, N. El-Masry

Source: ORCID
Added: August 21, 2020

1994 conference paper

Production of low-cost, large area CdZnTe films by MOCVD on GaAs and Si substrates

Producibility of II-VI Materials and Devices, 6-8 April 1994, 2228, 118–129.

By: N. Karam, F. Smith, R. Sudharsanan, A. Mastrovito, J. Daly, M. Sanfacon, M. Leonard, N. El-Masry

Event: at USA

Source: ORCID
Added: October 29, 2020

1992 journal article

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

Journal of Electronic Materials, 21(10), 965–970.

By: J. Gong, S. Nakamura, M. Leonard, S. Bedair & N. El-Masry

Source: ORCID
Added: August 21, 2020

1992 journal article

Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy

Applied Physics Letters, 61(14), 1646–1648.

By: J. Ramdani, Y. He, M. Leonard, N. El-Masry & S. Bedair

Source: ORCID
Added: August 21, 2020

Employment

2021 - present

Wolfspeed Durham, NC, US
Semiconductor Quality Engineer, Substrates and Epi Quality

2020 - 2021

North Carolina State University Raleigh, North Carolina, US
Research Librarian for Engineering NCSU Libraries

2019 - 2019

UNC Greensboro Greensboro, NC, US
NC Literary Map Social Media Coordinator Special Collections

2019 - 2019

North Carolina State University Raleigh, NC, US
Digitization/Metadata Assistant Special Collections, NCSU Libraries

2019 - 2019

University of North Carolina at Chapel Hill Libraries Chapel Hill, NC, US
Tarheel Library Apprentice Kenan Science Library

2000 - 2009

Wolfspeed Inc Durham, NC, US
Process Engineering Consultant Nitride Epitaxy

1997 - 2000

Wolfspeed Inc Durham, NC, US
Department Manager Nitride Epitaxy

1994 - 1997

Wolfspeed Inc Durham, NC, US
Process Engineer Nitride Epitaxy

1991 - 1994

North Carolina State University Raleigh, NC, US
Graduate Assistant Materials Science and Engineering

Education

2018 - 2020

UNC Greensboro Greensboro, NC, US
MS Library and Information Science

1991 - 1994

NC State University Raleigh, NC, US
MS Materials Science and Engineering

North Carolina State University Raleigh, NC, US
BS Materials Science and Engineering