Engineering, STEM, Research, Semiconductors
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2002 conference paper
Recent progress in GaN/SiC LEDs and photopumped lasers
LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 30-31 Oct. 1995, vol.2, 100–101.
Event: at New York, NY, USA
2001 patent
Group III nitride optoelectronic device formed on a silicon carbide substrate.
https://patents.google.com/patent/US6201262B1/en?inventor=Michelle+Turner+Leonard&assignee=Michelle+Turner+Leonard
Event: at US944547 07 Oct 1997 US399445 20 Sep 1999 US718654 22 Nov 2000 US718958 22 Nov 2000 US966789 28 Sep 2001
2000 conference paper
GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC
Photodetectors: Materials and Devices V, 26-28 Jan. 2000, 3948, 273–282.
Contributors: G. Bulman *, H. Kong* & *
Event: at USA
2000 conference paper
Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide
Materials Science Forum, 338. http://www.scopus.com/inward/record.url?eid=2-s2.0-17744407378&partnerID=MN8TOARS
1998 book
Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes
In Semiconductors and Semimetals (Vol. 52, pp. 283–306).
Contributors: J. Edmond*, H. Kong *, G. Negley*, * , K. Doverspike*, W. Weeks*, A. Suvorov, D. Waltz*, C. Carter*
1998 journal article
Gain characteristics of InGaN/GaN quantum well diode lasers
Applied Physics Letters, 72(12), 1418–1420.
Contributors: Y. Song*, M. Kuball *, A. Nurmikko*, G. Bulman *, K. Doverspike*, S. Sheppard *, T. Weeks*, *
1998 conference paper
Gain characteristics of InGaN/GaN quantum well diode lasers
Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6, 3-8 May 1998, 224.
Contributors: Y. Song *, M. Kuball *, A. Nurmikko *, G. Bulman *, K. Doverspike*, S. Sheppard *, T. Weeks*, *
Event: at Washington, DC, USA
1998 conference paper
Gain spectroscopy on InGaN/GaN quantum well laser diodes
Conference on Lasers and Electro-Optics Europe - Technical Digest, 66. http://www.scopus.com/inward/record.url?eid=2-s2.0-0031626264&partnerID=MN8TOARS
Event: at Glasgow, Scotland
1998 conference paper
InGaN/GaN lasers grown on SiC
Proceedings of SPIE - The International Society for Optical Engineering, 3284, 82–93.
Contributors: K. Doverspike*, G. Bulman *, S. Sheppard *, H. Kong*, * , H. Dieringer*, J. Edmond*, K. More *
Event: at USA
1998 conference paper
Nitride-based emitters on SiC substrates
Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997, 264-268(pt 2), 1421–1424.
Contributors: J. Edmond*, G. Bulman *, H. Kong*, * , K. Doverspike*, W. Weeks, J. Niccum, S. Sheppard *
Event: at Switzerland
1998 conference paper
The first nitride laser diode on silicon carbide
Nitride Semiconductors Symposium, 1-5 Dec. 1997, 1179–1184. Warrendale, PA, USA: Mater. Res. Soc.
Event: at Warrendale, PA, USA
1997 journal article
Dynamics of photoexcited carriers in Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN double heterostructures
Journal of Applied Physics, 82(6), 3158–3160.
Contributors: W. Shan *, S. Xu *, B. Little *, X. Xie *, J. Song*, G. Bulman *, H. Kong*, * , S. Krishnankutty*
1997 conference paper
First nitride laser diode on silicon carbide
Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1179–1184.
Contributors: J. Brown n, J. Swindell n, M. Johnson n, Z. Yu n, J. Schetzina n, G. Bulman *, K. Doverspike*, S. Sheppard *
Event: at Boston, MA, USA
1997 article
Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.
Contributors: M. Johnson n, W. Hughes n, W. Rowland Jr., J. Cook Jr., J. Schetzina n, * , H. Kong*, J. Edmond*, J. Zavada*
1997 conference paper
Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996, 195–198. Bristol, UK: IOP Publishing.
Event: at Bristol, UK
1997 conference paper
MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources
Materials Research Society Symposium - Proceedings, 449, 271–276. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS
Contributors: M. Johnson, Z. Yu, C. Boney, W. Rowland, W. Hughes, J. Cook, J. Schetzina, N. El-Masry
1997 conference paper
Nitride-based emitters on SiC substrates
Proceedings of SPIE - The International Society for Optical Engineering, 3002, 2–10.
Contributors: J. Edmond*, H. Kong*, * , K. Doverspike*, G. Bulman *, W. Weeks*, K. Irvine*, V. Dmitriev *
Event: at USA
1997 conference paper
Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN
Materials Research Society Symposium - Proceedings, 449, 713–718. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS
1997 conference paper
Status of nitride based light emitting and laser diodes on SiC
Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1169–1178. Boston, MA, USA: MRS.
Event: at Boston, MA, USA
1997 journal article
Strain determination in heteroepitaxial GaN
Applied Physics Letters, 71(6), 829–831.
Contributors: B. Skromme *, H. Zhao *, D. Wang*, H. Kong*, * , G. Bulman *, R. Molnar *
1996 conference paper
AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates
Materials Research Society Symposium - Proceedings, 395, 903–907. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029726099&partnerID=MN8TOARS
Event: at Pittsburgh, PA, USA
1996 journal article
Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
Applied Physics Letters, 69(6), 740–742.
Contributors: W. Shan *, A. Fischer *, J. Song *, G. Bulman *, H. Kong*, * , W. Perry n, M. Bremser n, R. Davis n
1996 conference paper
Recent progress in AlGaN-GaN laser structures on 6H-SiC
Physics and Simulation of Optoelectronic Devices IV, 29 Jan.-2 Feb. 1996, 2693, 57–63. USA: SPIE-Int. Soc. Opt. Eng.
Event: at USA
1996 conference paper
Recent progress in AlGaN/GaN laser structures on 6H-SiC
Proceedings of SPIE - The International Society for Optical Engineering, 2693, 57–63. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029766677&partnerID=MN8TOARS
1996 conference paper
The state of SiC:GaN-based blue LEDs
Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995, 991–994. Bristol, UK: IOP Publishing.
Event: at Bristol, UK
1995 journal article
Large area depositon of Cd<inf>1-x</inf>Zn<inf>x</inf>Te on GaAs and Si substrates by metalorganic chemical vapor deposition
Journal of Electronic Materials, 24(5), 483–489.
Event: at USA
1995 journal article
Selenium doping of GalnP by atomic layer epitaxy
Journal of Electronic Materials, 24(2), 75–78.
Contributors: D. Jung n, n , N. El-Masry n & S. Bedair n
1994 conference paper
Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates
Proceedings of SPIE - The International Society for Optical Engineering, 2228, 118–129. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028722381&partnerID=MN8TOARS
1994 conference paper
Production of low-cost, large area CdZnTe films by MOCVD on GaAs and Si substrates
Producibility of II-VI Materials and Devices, 6-8 April 1994, 2228, 118–129.
Event: at USA
1992 journal article
Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy
Journal of Electronic Materials, 21(10), 965–970.
Contributors: J. Gong n, S. Nakamura *, n , S. Bedair n & N. El-Masry n
1992 journal article
Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy
Applied Physics Letters, 61(14), 1646–1648.
Contributors: J. Ramdani n, Y. He n, n , N. El-Masry n & S. Bedair n
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