Michelle Leonard

Also known as: Michelle T. Leonard; Michelle Turner Leonard

Engineering, STEM, Research, Semiconductors

Engineer and Engineering Librarian/Education who is passionate about supporting the development new engineering talent, especially for those from underrepresented groups.

2002 conference paper

Recent progress in GaN/SiC LEDs and photopumped lasers

LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 30-31 Oct. 1995, vol.2, 100–101.

By: G. Bulman*, J. Edmond*, H. Kong*, M. Leonard*, V. Dmitriev*, K. Irvine*, V. Nikolaev, A. Zubrilov*, D. Tsvetkov*

Event: at New York, NY, USA

Source: ORCID
Added: October 29, 2020

2001 patent

Group III nitride optoelectronic device formed on a silicon carbide substrate.

https://patents.google.com/patent/US6201262B1/en?inventor=Michelle+Turner+Leonard&assignee=Michelle+Turner+Leonard

By: E. A, K. H, D. M, L. T, H. K, D. M, K. S

Event: at US944547 07 Oct 1997 US399445 20 Sep 1999 US718654 22 Nov 2000 US718958 22 Nov 2000 US966789 28 Sep 2001

Source: ORCID
Added: October 29, 2020

2000 conference paper

GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Photodetectors: Materials and Devices V, 26-28 Jan. 2000, 3948, 273–282.

By: G. Bulman*, H. Kong* & M. Leonard*

Contributors: G. Bulman*, H. Kong* & M. Leonard*

Event: at USA

author keywords: GaN; AlGaN; photodiode
Source: ORCID
Added: August 21, 2020

2000 conference paper

Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide

Materials Science Forum, 338. http://www.scopus.com/inward/record.url?eid=2-s2.0-17744407378&partnerID=MN8TOARS

By: S. Sheppard, K. Doverspike, M. Leonard, W. Pribble, S. Allen & J. Palmour

Contributors: S. Sheppard, K. Doverspike, M. Leonard, W. Pribble, S. Allen & J. Palmour

Source: ORCID
Added: August 21, 2020

1998 book

Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes

In Semiconductors and Semimetals (Vol. 52, pp. 283–306).

By: J. Edmond*, H. Kong*, G. Negley*, M. Leonard*, K. Doverspike*, W. Weeks*, A. Suvorov, D. Waltz*, C. Carter*

Contributors: J. Edmond*, H. Kong*, G. Negley*, M. Leonard*, K. Doverspike*, W. Weeks*, A. Suvorov, D. Waltz*, C. Carter*

Source: ORCID
Added: August 21, 2020

1998 journal article

Gain characteristics of InGaN/GaN quantum well diode lasers

Applied Physics Letters, 72(12), 1418–1420.

By: Y. Song*, M. Kuball*, A. Nurmikko*, G. Bulman*, K. Doverspike*, S. Sheppard*, T. Weeks*, M. Leonard* ...

Contributors: Y. Song*, M. Kuball*, A. Nurmikko*, G. Bulman*, K. Doverspike*, S. Sheppard*, T. Weeks*, M. Leonard* ...

Source: ORCID
Added: August 21, 2020

1998 conference paper

Gain characteristics of InGaN/GaN quantum well diode lasers

Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6, 3-8 May 1998, 224.

By: Y. Song*, M. Kuball*, A. Nurmikko*, G. Bulman*, K. Doverspike*, S. Sheppard*, T. Weeks*, M. Leonard* ...

Contributors: Y. Song*, M. Kuball*, A. Nurmikko*, G. Bulman*, K. Doverspike*, S. Sheppard*, T. Weeks*, M. Leonard* ...

Event: at Washington, DC, USA

TL;DR: The gain characteristics of InGaN quantum well (QW) diode lasers are investigated spectroscopically and the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy. (via Semantic Scholar)
Source: ORCID
Added: August 21, 2020

1998 conference paper

Gain spectroscopy on InGaN/GaN quantum well laser diodes

Conference on Lasers and Electro-Optics Europe - Technical Digest, 66. http://www.scopus.com/inward/record.url?eid=2-s2.0-0031626264&partnerID=MN8TOARS

By: M. Kuball, Y. Song, A. Nurmikko, G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, M. Leonard ...

Contributors: M. Kuball, Y. Song, A. Nurmikko, G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, M. Leonard ...

Event: at Glasgow, Scotland

Source: ORCID
Added: August 21, 2020

1998 conference paper

InGaN/GaN lasers grown on SiC

Proceedings of SPIE - The International Society for Optical Engineering, 3284, 82–93.

By: K. Doverspike*, G. Bulman*, S. Sheppard*, H. Kong*, M. Leonard*, H. Dieringer*, J. Edmond*, K. More* ...

Contributors: K. Doverspike*, G. Bulman*, S. Sheppard*, H. Kong*, M. Leonard*, H. Dieringer*, J. Edmond*, K. More* ...

Event: at USA

author keywords: InGaN; lasers; LEDs; conducting buffer; SiC
Source: ORCID
Added: August 21, 2020

1998 conference paper

Nitride-based emitters on SiC substrates

Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997, 264-268(pt 2), 1421–1424.

By: J. Edmond*, G. Bulman*, H. Kong*, M. Leonard*, K. Doverspike*, W. Weeks, J. Niccum, S. Sheppard* ...

Contributors: J. Edmond*, G. Bulman*, H. Kong*, M. Leonard*, K. Doverspike*, W. Weeks, J. Niccum, S. Sheppard* ...

Event: at Switzerland

author keywords: light emitting diode; laser diode; indium gallium nitride
Source: ORCID
Added: August 21, 2020

1998 conference paper

The first nitride laser diode on silicon carbide

Nitride Semiconductors Symposium, 1-5 Dec. 1997, 1179–1184. Warrendale, PA, USA: Mater. Res. Soc.

By: J. Brown, J. Swindell, M. Johnson, Z. Yu, J. Schetzina, G. Bulman, K. Doverspike, S. Sheppard ...

Event: at Warrendale, PA, USA

Source: ORCID
Added: October 29, 2020

1997 journal article

Dynamics of photoexcited carriers in Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN double heterostructures

Journal of Applied Physics, 82(6), 3158–3160.

By: W. Shan*, S. Xu*, B. Little*, X. Xie*, J. Song*, G. Bulman*, H. Kong*, M. Leonard*, S. Krishnankutty*

Contributors: W. Shan*, S. Xu*, B. Little*, X. Xie*, J. Song*, G. Bulman*, H. Kong*, M. Leonard*, S. Krishnankutty*

Source: ORCID
Added: August 21, 2020

1997 conference paper

First nitride laser diode on silicon carbide

Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1179–1184.

By: J. Brown n, J. Swindell n, M. Johnson n, Z. Yu n, J. Schetzina n, G. Bulman*, K. Doverspike*, S. Sheppard* ...

Contributors: J. Brown n, J. Swindell n, M. Johnson n, Z. Yu n, J. Schetzina n, G. Bulman*, K. Doverspike*, S. Sheppard* ...

Event: at Boston, MA, USA

Source: ORCID
Added: August 21, 2020

1997 article

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.

By: M. Johnson n, W. Hughes n, W. Rowland n, J. Cook n, J. Schetzina n, M. Leonard*, H. Kong*, J. Edmond*, J. Zavada*

Contributors: M. Johnson n, W. Hughes n, W. Rowland Jr., J. Cook Jr., J. Schetzina n, M. Leonard*, H. Kong*, J. Edmond*, J. Zavada*

Sources: ORCID, Web Of Science
Added: August 6, 2018

1997 conference paper

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996, 195–198. Bristol, UK: IOP Publishing.

Michelle Leonard

Event: at Bristol, UK

Source: ORCID
Added: October 29, 2020

1997 conference paper

MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources

Materials Research Society Symposium - Proceedings, 449, 271–276. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS

By: M. Johnson, Z. Yu, C. Boney, W. Rowland, W. Hughes, J. Cook, J. Schetzina, N. El-Masry ...

Contributors: M. Johnson, Z. Yu, C. Boney, W. Rowland, W. Hughes, J. Cook, J. Schetzina, N. El-Masry ...

Source: ORCID
Added: August 21, 2020

1997 conference paper

Nitride-based emitters on SiC substrates

Proceedings of SPIE - The International Society for Optical Engineering, 3002, 2–10.

By: J. Edmond*, H. Kong*, M. Leonard*, K. Doverspike*, G. Bulman*, W. Weeks*, K. Irvine*, D. Vladimir

Contributors: J. Edmond*, H. Kong*, M. Leonard*, K. Doverspike*, G. Bulman*, W. Weeks*, K. Irvine*, V. Dmitriev*

Event: at USA

author keywords: silicon carbide; gallium nitride; aluminum gallium nitride; indium gallium nitride; chemical vapor deposition; light emitting diode; laser; conductive buffer
Source: ORCID
Added: August 21, 2020

1997 conference paper

Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN

Materials Research Society Symposium - Proceedings, 449, 713–718. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS

By: B. Skromme, H. Zhao, B. Goldenberg, H. Kong, M. Leonard, G. Bulman, C. Abernathy, S. Pearton

Contributors: B. Skromme, H. Zhao, B. Goldenberg, H. Kong, M. Leonard, G. Bulman, C. Abernathy, S. Pearton

Source: ORCID
Added: August 21, 2020

1997 conference paper

Status of nitride based light emitting and laser diodes on SiC

Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1169–1178. Boston, MA, USA: MRS.

Michelle Leonard

Event: at Boston, MA, USA

Source: ORCID
Added: October 29, 2020

1997 journal article

Strain determination in heteroepitaxial GaN

Applied Physics Letters, 71(6), 829–831.

By: B. Skromme*, H. Zhao*, D. Wang*, H. Kong*, M. Leonard*, G. Bulman*, R. Molnar*

Contributors: B. Skromme*, H. Zhao*, D. Wang*, H. Kong*, M. Leonard*, G. Bulman*, R. Molnar*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: August 21, 2020

1996 conference paper

AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates

Materials Research Society Symposium - Proceedings, 395, 903–907. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029726099&partnerID=MN8TOARS

By: H. Kong, M. Leonard, G. Bulman, G. Negley & J. Edmond

Contributors: H. Kong, M. Leonard, G. Bulman, G. Negley & J. Edmond

Event: at Pittsburgh, PA, USA

Source: ORCID
Added: August 21, 2020

1996 journal article

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied Physics Letters, 69(6), 740–742.

By: W. Shan*, A. Fischer*, J. Song*, G. Bulman*, H. Kong*, M. Leonard*, W. Perry n, M. Bremser n, R. Davis n

Contributors: W. Shan*, A. Fischer*, J. Song*, G. Bulman*, H. Kong*, M. Leonard*, W. Perry n, M. Bremser n, R. Davis n

Source: ORCID
Added: August 21, 2020

1996 conference paper

Recent progress in AlGaN-GaN laser structures on 6H-SiC

Physics and Simulation of Optoelectronic Devices IV, 29 Jan.-2 Feb. 1996, 2693, 57–63. USA: SPIE-Int. Soc. Opt. Eng.

By: G. Bulman, J. Edmond, V. Dmitriev, H. Kong, M. Leonard, K. Irvine, V. Nikolaev, A. Zubrilov, D. Tsvetkov

Event: at USA

Source: ORCID
Added: October 29, 2020

1996 conference paper

Recent progress in AlGaN/GaN laser structures on 6H-SiC

Proceedings of SPIE - The International Society for Optical Engineering, 2693, 57–63. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029766677&partnerID=MN8TOARS

By: G. Bulman, J. Edmond, V. Dmitriev, H. Kong, M. Leonard, K. Irvine, V. Nikolaev, A. Zubrilov, D. Tsvetkov

Contributors: G. Bulman, J. Edmond, V. Dmitriev, H. Kong, M. Leonard, K. Irvine, V. Nikolaev, A. Zubrilov, D. Tsvetkov

Source: ORCID
Added: August 21, 2020

1996 conference paper

The state of SiC:GaN-based blue LEDs

Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995, 991–994. Bristol, UK: IOP Publishing.

By: J. Edmond, H. Kong, M. Leonard, G. Bulman & G. Negley

Event: at Bristol, UK

Source: ORCID
Added: October 29, 2020

1995 journal article

Large area depositon of Cd<inf>1-x</inf>Zn<inf>x</inf>Te on GaAs and Si substrates by metalorganic chemical vapor deposition

Journal of Electronic Materials, 24(5), 483–489.

By: N. Karam*, R. Sudharsanan*, A. Mastrovito*, M. Sanfacon*, F. Smith, M. Leonard n, N. El-Masry n

Contributors: N. Karam*, R. Sudharsanan*, A. Mastrovito*, M. Sanfacon*, F. Smith, M. Leonard n, N. El-Masry n

Event: at USA

author keywords: CDZNTE/GAAS; CDZNTE/GAAS/SI; GAAS/SI; CDZNTE; HETEROEPITAXY; HGCDTE; LIQUID PHASE EPITAXY (LPE); METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)
Source: ORCID
Added: August 21, 2020

1995 journal article

Selenium doping of GalnP by atomic layer epitaxy

Journal of Electronic Materials, 24(2), 75–78.

By: D. Jung n, M. Leonard n, N. El-Masry n & S. Bedair n

Contributors: D. Jung n, M. Leonard n, N. El-Masry n & S. Bedair n

author keywords: ATOMIC LAYER EPITAXY (ALE); GAAS; GAINP; SELENIUM (SE)
UN Sustainable Development Goal Categories
Source: ORCID
Added: August 21, 2020

1994 conference paper

Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates

Proceedings of SPIE - The International Society for Optical Engineering, 2228, 118–129. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028722381&partnerID=MN8TOARS

By: N. Karam, F. Smith, R. Sudharsanan, A. Mastrovito, J. Daly, M. Sanfacon, M. Leonard, N. El-Masry

Contributors: N. Karam, F. Smith, R. Sudharsanan, A. Mastrovito, J. Daly, M. Sanfacon, M. Leonard, N. El-Masry

Source: ORCID
Added: August 21, 2020

1994 conference paper

Production of low-cost, large area CdZnTe films by MOCVD on GaAs and Si substrates

Producibility of II-VI Materials and Devices, 6-8 April 1994, 2228, 118–129.

By: N. Karam*, F. Smith*, R. Sudharsanan*, A. Mastrovito*, J. Daly*, M. Sanfacon*, M. Leonard n, N. El-Masry n

Event: at USA

Source: ORCID
Added: October 29, 2020

1992 journal article

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

Journal of Electronic Materials, 21(10), 965–970.

By: J. Gong n, S. Nakamura*, M. Leonard n, S. Bedair n & N. El-Masry n

Contributors: J. Gong n, S. Nakamura*, M. Leonard n, S. Bedair n & N. El-Masry n

author keywords: ALE; MOCVD; ALGAP AND GAP ON SI HETEROEPITAXY; TEM
UN Sustainable Development Goal Categories
Source: ORCID
Added: August 21, 2020

1992 journal article

Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy

Applied Physics Letters, 61(14), 1646–1648.

By: J. Ramdani n, Y. He n, M. Leonard n, N. El-Masry n & S. Bedair n

Contributors: J. Ramdani n, Y. He n, M. Leonard n, N. El-Masry n & S. Bedair n

UN Sustainable Development Goal Categories
Source: ORCID
Added: August 21, 2020

Employment

Updated: October 16th, 2022 16:53

2021 - present

Wolfspeed Durham, NC, US
Semiconductor Quality Engineer, Substrates and Epi Quality

2020 - 2021

North Carolina State University Raleigh, North Carolina, US
Research Librarian for Engineering NCSU Libraries

2019 - 2019

University of North Carolina at Chapel Hill Libraries Chapel Hill, NC, US
Tarheel Library Apprentice Kenan Science Library

2019 - 2019

North Carolina State University Raleigh, NC, US
Digitization/Metadata Assistant Special Collections, NCSU Libraries

2019 - 2019

UNC Greensboro Greensboro, NC, US
NC Literary Map Social Media Coordinator Special Collections

2000 - 2009

Wolfspeed Inc Durham, NC, US
Process Engineering Consultant Nitride Epitaxy

1997 - 2000

Wolfspeed Inc Durham, NC, US
Department Manager Nitride Epitaxy

1994 - 1997

Wolfspeed Inc Durham, NC, US
Process Engineer Nitride Epitaxy

1991 - 1994

North Carolina State University Raleigh, NC, US
Graduate Assistant Materials Science and Engineering

Education

Updated: June 16th, 2022 10:42

2018 - 2020

UNC Greensboro Greensboro, NC, US
MS Library and Information Science

1991 - 1994

NC State University Raleigh, NC, US
MS Materials Science and Engineering

North Carolina State University Raleigh, NC, US
BS Materials Science and Engineering

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