Michelle Leonard

Recent progress in GaN/SiC LEDs and photopumped lasers

LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 30-31 Oct. 1995, vol.2, 100–101.

Group III nitride optoelectronic device formed on a silicon carbide substrate.

https://patents.google.com/patent/US6201262B1/en?inventor=Michelle+Turner+Leonard&assignee=Michelle+Turner+Leonard

GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Photodetectors: Materials and Devices V, 26-28 Jan. 2000, 3948, 273–282.

Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide

Materials Science Forum, 338. http://www.scopus.com/inward/record.url?eid=2-s2.0-17744407378&partnerID=MN8TOARS

Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes

In Semiconductors and Semimetals (Vol. 52, pp. 283–306).

Gain characteristics of InGaN/GaN quantum well diode lasers

Applied Physics Letters, 72(12), 1418–1420.

Gain characteristics of InGaN/GaN quantum well diode lasers

Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6, 3-8 May 1998, 224.

Gain spectroscopy on InGaN/GaN quantum well laser diodes

Conference on Lasers and Electro-Optics Europe - Technical Digest, 66. http://www.scopus.com/inward/record.url?eid=2-s2.0-0031626264&partnerID=MN8TOARS

InGaN/GaN lasers grown on SiC

Proceedings of SPIE - The International Society for Optical Engineering, 3284, 82–93.

Nitride-based emitters on SiC substrates

Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997, 264-268(pt 2), 1421–1424.

The first nitride laser diode on silicon carbide

Nitride Semiconductors Symposium, 1-5 Dec. 1997, 1179–1184. Warrendale, PA, USA: Mater. Res. Soc.

Dynamics of photoexcited carriers in Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN double heterostructures

Journal of Applied Physics, 82(6), 3158–3160.

First nitride laser diode on silicon carbide

Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1179–1184.

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996, 195–198. Bristol, UK: IOP Publishing.

MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources

Materials Research Society Symposium - Proceedings, 449, 271–276. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS

Nitride-based emitters on SiC substrates

Proceedings of SPIE - The International Society for Optical Engineering, 3002, 2–10.

Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN

Materials Research Society Symposium - Proceedings, 449, 713–718. http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS

Status of nitride based light emitting and laser diodes on SiC

Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1169–1178. Boston, MA, USA: MRS.

Strain determination in heteroepitaxial GaN

Applied Physics Letters, 71(6), 829–831.

AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates

Materials Research Society Symposium - Proceedings, 395, 903–907. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029726099&partnerID=MN8TOARS

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied Physics Letters, 69(6), 740–742.

Recent progress in AlGaN-GaN laser structures on 6H-SiC

Physics and Simulation of Optoelectronic Devices IV, 29 Jan.-2 Feb. 1996, 2693, 57–63. USA: SPIE-Int. Soc. Opt. Eng.

Recent progress in AlGaN/GaN laser structures on 6H-SiC

Proceedings of SPIE - The International Society for Optical Engineering, 2693, 57–63. http://www.scopus.com/inward/record.url?eid=2-s2.0-0029766677&partnerID=MN8TOARS

The state of SiC:GaN-based blue LEDs

Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995, 991–994. Bristol, UK: IOP Publishing.

Large area depositon of Cd<inf>1-x</inf>Zn<inf>x</inf>Te on GaAs and Si substrates by metalorganic chemical vapor deposition

Journal of Electronic Materials, 24(5), 483–489.

Selenium doping of GalnP by atomic layer epitaxy

Journal of Electronic Materials, 24(2), 75–78.

Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates

Proceedings of SPIE - The International Society for Optical Engineering, 2228, 118–129. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028722381&partnerID=MN8TOARS

Production of low-cost, large area CdZnTe films by MOCVD on GaAs and Si substrates

Producibility of II-VI Materials and Devices, 6-8 April 1994, 2228, 118–129.

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

Journal of Electronic Materials, 21(10), 965–970.

Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy

Applied Physics Letters, 61(14), 1646–1648.