@misc{a_h_m_t_k_m_s_2001, place={US944547    07 Oct 1997   US399445    20 Sep 1999   US718654    22 Nov 2000   US718958    22 Nov 2000   US966789    28 Sep 2001}, title={Group III nitride optoelectronic device formed on a silicon carbide substrate.}, url={https://patents.google.com/patent/US6201262B1/en?inventor=Michelle+Turner+Leonard&assignee=Michelle+Turner+Leonard}, note={DIIDW:1999264132}, number={WO9918617-A1; AU9896890-A; EP1027736-A1; US6187606-B1; US6201262-B1; CN1278949-A; KR2001031003-A; JP2001519603-W; US2002008241-A1; US6373077-B1; US6492193-B1; US6630690-B2; CA2493503-A1; CA2305203-C; CA2493503-C; CN1185719-C; JP2007180556-A; JP4061019-B2; KR592897-B1; JP4966645-B2}, author={A, EDMOND J. and H, KONG and M, DOVERSPIKE K. and T, LEONARD M. and K, HUASHUANG and M, DORERSPIKE K. and S, KONG H.}, year={2001}, month={Mar} }
 @inproceedings{bulman_kong_leonard_2000, place={USA}, title={GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC}, volume={3948}, url={https://www.lens.org/082-307-211-250-802}, DOI={10.1117/12.382127}, abstractNote={GaN homojunction and AlGaN/GaN heterojunction UV photodiodes were successfully fabricated and tested. The p+/n mesa devices were grown on a n-type 6H-SiC substrate. Photoresponse was observed in these deices from 206 nm to the cutoff wavelength of GaN. Peak responsivity values of 111 mA/W and 123 mA/W were observed at 360 nm for unpackaged homojunction and heterojunction devices, respectively. In packaged device, the peak responsivity increased to 124 and 147 mA/W for the homojunction and heterojunction devices, respectively. High breakdown voltages in excess of 100 V for the homojunction and 70 V for the heterojunction devices were obtained with dark current densities of 3 by 10-11 A/cm2 and 1 by 10-10 A/cm2 A/cm2 at -1V bias at room temperature, respectively. These result show that homojunction and heterojunction visible-blind detectors can be fabricated in the AlGaN/GaN material system on SiC substrates.}, note={\urlhttps://ui.adsabs.harvard.edu/abs/2000SPIE.3948..273B/abstract ; \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3948/1/GaN-homojunction-and-AlGaN-GaN-heterojunction-visible-blind-photodiodes-grown/10.1117/12.382127.full ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=919037}, booktitle={Photodetectors: Materials and Devices V, 26-28 Jan. 2000}, publisher={SPIE-Int. Soc. Opt. Eng.}, author={Bulman, Gary E. and Kong, Hua-Shuang and Leonard, Michelle}, year={2000}, pages={273–82} }
 @inproceedings{sheppard_doverspike_leonard_pribble_allen_palmour_2000, title={Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide}, volume={338}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-17744407378&partnerID=MN8TOARS}, booktitle={Materials Science Forum}, author={Sheppard, S.T. and Doverspike, K. and Leonard, M. and Pribble, W.L. and Allen, S.T. and Palmour, J.W.}, year={2000} }
 @book{edmond_kong_negley_leonard_doverspike_weeks_suvorov_waltz_carter_1998, title={Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes}, volume={52}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-77956710167&partnerID=MN8TOARS}, DOI={10.1016/S0080-8784(08)62849-5}, abstractNote={This chapter discusses silicon carbide or Sic-based UV photodiodes and light-emitting diodes (LEDs). Sic has been investigated as a short-wavelength optoelectronic material since the early years of semiconductor development. As a result of the 3.0-eV bandgap of 6H.SiC, any color LED in the visible spectrum can be achieved in this material. Development of 6H-SiC blue LEDs was for many years a major research effort at Siemens Research Laboratory, various labs in the former Soviet Union, and a number of Japanese labs, in particular Sanyo Electric Co., Ltd. Several of these groups released blue LEDs as products. High-temperature Sic ultra violet (UV) photodiodes may have a significant impact in many application areas. Improvement in combustion control is anticipated with the ability to sense flames in aircraft engines, building boiler systems, and industrial processes. Air quality monitoring and UV dosimetry for industrial processes are other important application areas. However, 6H-Sic is an excellent substrate for heteroepitaxial growth of III-nitrides, and Cree's line of G. SiC LEDs is based on nitride structures grown on 6H-Sic.}, note={\urlhttps://www.sciencedirect.com/science/article/pii/S0080878408628495}, number={C}, journal={Semiconductors and Semimetals}, author={Edmond, John A. and Kong, Hua-Shuang and Negley, Gerry and Leonard, Michelle and Doverspike, K. and Weeks, W. and Suvorov, A. and Waltz, Douglas G. and Carter, Calvin H.}, year={1998}, pages={283–306} }
 @article{song_kuball_nurmikko_bulman_doverspike_sheppard_weeks_leonard_kong_dieringer_et al._1998, title={Gain characteristics of InGaN/GaN quantum well diode lasers}, volume={72}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0032025791&partnerID=MN8TOARS}, DOI={10.1063/1.120607}, abstractNote={We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy.}, note={Publisher: Am Inst Phys}, number={12}, journal={Applied Physics Letters}, author={Song, Yoon-Kyu and Kuball, Martin and Nurmikko, Arto V. and Bulman, G.E. and Doverspike, K. and Sheppard, S.T. and Weeks, T. W. and Leonard, Michelle and Kong, Hua-Shuang and Dieringer, H. and et al.}, year={1998}, pages={1418–1420} }
 @inproceedings{song_kuball_nurmikko_bulman_doverspike_sheppard_weeks_leonard_kong_dieringer_et al._1998, place={Washington, DC, USA}, title={Gain characteristics of InGaN/GaN quantum well diode lasers}, url={https://www.lens.org/091-094-476-260-475}, DOI={10.1109/CLEO.1998.676085}, abstractNote={We report on gain spectra of InGaN/AlGaN MQW SCH diode lasers, grown and fabricated on 6H-SiC substrates. The active medium was composed of 8 QWs with a nominal indium composition of x=0.1. The devices were index guided ridge waveguide structures with a typical cavity length of 500 /spl mu/m and a mesa width of 5 /spl mu/m. The gain studies are based on the analysis of the spontaneous emission spectra of the devices, collected normal to the resonator axis as a function of injection, while making use of fundamental connections between spontaneous emission, stimulated emission, and absorption. An example of the gain/absorption spectra in the InGaN MQW diode laser at room temperature is shown.}, note={\urlhttps://www.osapublishing.org/abstract.cfm?URI=CLEO-1998-CWD3 ; \urlhttps://research-information.bris.ac.uk/en/publications/gain-characteristics-of-ingangan-quantum-well-diode-laser ; \urlhttps://ieeexplore.ieee.org/document/676085}, booktitle={Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6, 3-8 May 1998}, publisher={Opt. Soc. America}, author={Song, Yoon-Kyu and Kuball, Martin and Nurmikko, Arto V. and Bulman, G.E. and Doverspike, K. and Sheppard, S.T. and Weeks, T. W. and Leonard, Michelle and Kong, Hua-Shuang and Dieringer, H. and et al.}, year={1998}, pages={224} }
 @inproceedings{kuball_song_nurmikko_bulman_doverspike_sheppard_weeks_leonard_kong_dieringer_et al._1998, place={Glasgow, Scotland}, title={Gain spectroscopy on InGaN/GaN quantum well laser diodes}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0031626264&partnerID=MN8TOARS}, booktitle={Conference on Lasers and Electro-Optics Europe - Technical Digest}, publisher={IEEE}, author={Kuball, M. and Song, Y.-K. and Nurmikko, A.V. and Bulman, G.E. and Doverspike, K. and Sheppard, S.T. and Weeks, T.W. and Leonard, M. and Kong, H.S. and Dieringer, H. and et al.}, year={1998}, pages={66} }
 @inproceedings{doverspike_bulman_sheppard_kong_leonard_dieringer_edmond_more_song_kuball_et al._1998, place={USA}, title={InGaN/GaN lasers grown on SiC}, volume={3284}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0003546261&partnerID=MN8TOARS}, DOI={10.1117/12.304434}, abstractNote={Single crystal thin films with compositions from the AlN-InN- GaN system were grown via metal-organic chemical vapor deposition (MOCVD) on single crystal 6H-SiC substrates. Blue light emitting (LED) and laser diode (LD) structures were fabricated. A conducting buffer layer was developed which uses an AlGaN buffer layer which provides a conduction path between SiC and the active device region. This conducting buffer layer was utilized in both the LEDs and the LDs. The external quantum efficiency of the LEDs was 3% at 20 mA (3.6V) with a peak emission wavelength of 430 nm. Violet and blue LDs were fabricated which consisted of an 8-well InGaN/GaN multiple quantum well (MQW) active region in a separate confinement heterostructure (SCH) design. The devices lased at room temperature under pulsed and continuous wave operation with an emission wavelength of 404-435 nm. The lowest pulsed operation threshold current density obtained for lasing under was 10.4 kA/cm2.}, note={\urlhttps://ui.adsabs.harvard.edu/abs/1998SPIE.3284...82D/abstract ; \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3284/0000/InGaNGaN-lasers-grown-on-SiC/10.1117/12.304434.full}, booktitle={Proceedings of SPIE - The International Society for Optical Engineering}, publisher={SPIE-Int. Soc. Opt. Eng.}, author={Doverspike, K. and Bulman, Gary E. and Sheppard, S. T. and Kong, Hua-Shuang and Leonard, Michelle and Dieringer, Heidi Marie and Edmond, John A. and More, K. L. and Song, Yoon-Kyu and Kuball, Martin and et al.}, year={1998}, pages={82–93} }
 @inproceedings{edmond_bulman_kong_leonard_doverspike_weeks_niccum_sheppard_negley_slater_et al._1998, place={Switzerland}, title={Nitride-based emitters on SiC substrates}, volume={264-268}, url={https://www.lens.org/018-410-978-579-704}, DOI={10.4028/www.scientific.net/MSF.264-268.1421}, note={Issue: 2}, number={pt 2}, booktitle={Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997}, publisher={Trans Tech Publications}, author={Edmond, J. and Bulman, G. and Kong, H.S. and Leonard, Michelle and Doverspike, K. and Weeks, W. and Niccum, J. and Sheppard, S.T. and Negley, G. and Slater, D. and et al.}, year={1998}, pages={1421–4} }
 @inproceedings{brown_swindell_johnson_yu_schetzina_bulman_doverspike_sheppard_weeks_leonard_et al._1998, place={Warrendale, PA, USA}, title={The first nitride laser diode on silicon carbide}, booktitle={Nitride Semiconductors Symposium, 1-5 Dec. 1997}, publisher={Mater. Res. Soc.}, author={Brown, J.D. and Swindell, J.T. and Johnson, M.A.L. and Yu, Zhonghai and Schetzina, J.F. and Bulman, G.E. and Doverspike, K. and Sheppard, S.T. and Weeks, T.W. and Leonard, M. and et al.}, year={1998}, pages={1179–84} }
 @article{shan_xu_little_xie_song_bulman_kong_leonard_krishnankutty_1997, title={Dynamics of photoexcited carriers in Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN double heterostructures}, volume={82}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0001232521&partnerID=MN8TOARS}, DOI={10.1063/1.366101}, abstractNote={We present results of a time-resolved photoluminescence study of the dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (DHs). The carrier dynamics including generation, diffusion, spontaneous recombination, and nonradiative relaxation were studied by examining the time decay of photoluminescence associated with the spontaneous recombination from the samples. The temporal evolution of the luminescence from the GaN active layers of the DH samples was found to be governed by a carrier–diffusion dominated capture process. The determination of the capture time for the carriers drift and diffusion into the GaN active region, in addition to the effective lifetimes of the spontaneous recombination for carriers in the AlGaN cladding layers and the GaN active region, allows an estimation of the diffusion constants for the minority carriers in the AlxGa1−xN cladding layers of the DHs. Our results yield a diffusion constant of 2.6 cm2/s for Al0.03Ga0.97N and 1.5 cm2/s for Al0.1Ga0.9N at 10 K.}, note={Place: USA Publisher: AIP}, number={6}, journal={Journal of Applied Physics}, author={Shan, W. and Xu, S. and Little, B. D. and Xie, Xincheng and Song, J. J. and Bulman, Gary E. and Kong, H. S. and Leonard, Michelle and Krishnankutty, S.}, year={1997}, pages={3158–3160} }
 @inproceedings{brown_swindell_johnson_yu_schetzina_bulman_doverspike_sheppard_weeks_leonard_et al._1997, place={Boston, MA, USA}, title={First nitride laser diode on silicon carbide}, volume={482}, url={https://www.lens.org/013-162-520-839-795}, DOI={10.1557/proc-482-1179}, note={\urlhttp://journals.cambridge.org/abstract_S1946427400218575}, booktitle={Proceedings of the 1997 MRS Fall Meeting, December 1, 1997  -  December 4, 1997}, publisher={MRS}, author={Brown, J.D. and Swindell, JT and Johnson, Mark and Yu, Z. and Schetzina, J. F. and Bulman, Gary E. and Doverspike, K. and Sheppard, S.T. and Weeks, T. W. and Leonard, Michelle and et al.}, year={1997}, pages={1179–1184} }
 @article{johnson_hughes_rowland_cook_schetzina_leonard_kong_edmond_zavada_1997, title={Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy}, volume={175}, ISSN={["1873-5002"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0001866991&partnerID=MN8TOARS}, DOI={10.1016/S0022-0248(96)01019-6}, abstractNote={GaN, AlGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been deposited homoepitaxially onto GaNSiC substrates and heteroepitaxially onto LiGaO2 substrates. LiGaO2 is an ordered and closely-lattice-matched orthorhombic variant of the wurtzite crystal structure of GaN. A low-temperature AlN buffer layer is necessary in order to nucleate GaN on LiGaO2. Thick GaN and AlGaN layers may then be grown once deposition is initiated. InGaN has been grown by MBE at mole fractions of up to 20% as a quantum well between GaN cladding layers. The indium containing structures were deposited onto GaNSiC substrates to focus the development effort on the InGaN growth process rather than on heteroepitaxial nucleation. A modulated beam technique, with alternating short periods of (In, Ga)N and (Ga)N, was used to grow high-quality InGaN. The modulated beam limits the nucleation of metal droplets on the growth surface, which form due to thermodynamic limitations. A narrow PL dominated by band edge luminescence at 421 nm results from this growth technique. Growth of GaN at high temperatures is also reported.}, note={Place: Malibu, CA, USA Publisher: Elsevier Sci B.V.}, number={PART 1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Johnson, MAL and Hughes, WC and Rowland, WH and Cook, JW and Schetzina, JF and Leonard, M and Kong, HS and Edmond, JA and Zavada, J}, year={1997}, month={May}, pages={72–78} }
 @inproceedings{growth of gan, ingan, and algan films and quantum well structures by molecular beam epitaxy_1997, place={Bristol, UK}, booktitle={Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996}, publisher={IOP Publishing}, year={1997}, pages={195–8} }
 @inproceedings{johnson_yu_boney_rowland_hughes_cook_schetzina_el-masry_leonard_kong_et al._1997, title={MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources}, volume={449}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS}, booktitle={Materials Research Society Symposium - Proceedings}, author={Johnson, M.A.L. and Yu, Z. and Boney, C. and Rowland, W.H. and Hughes, W.C. and Cook, J.W. and Schetzina, J.F. and El-Masry, N.A. and Leonard, M.T. and Kong, H.S. and et al.}, year={1997}, pages={271–276} }
 @inproceedings{edmond_kong_leonard_doverspike_bulman_weeks_irvine_vladimir_1997, place={USA}, title={Nitride-based emitters on SiC substrates}, volume={3002}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0004558139&partnerID=MN8TOARS}, DOI={10.1117/12.271027}, abstractNote={Single crystal thin films with compositions from the AlN- InN-GaN system were grown via metal-organic chemical vapor deposition on single crystal 6H-SiC substrates. AlGaN containing high and low fractions of Al was grown directly on the SiC for use as a buffer layer. Subsequent epitaxial layers of GaN and AlGaN were doped with Mg and Si to achieve p-type conductivity, respectively. N-type InGaN layers with In compositions up to approximately 50 percent were also achieved. Room temperature photoluminescence on these films exhibited single peaks in the spectral range from the UV to green. Various layers were combined to form light emitting diode (LED) and laser structures. Blue LEDs with both insulating and conductive buffer layers exhibited an external quantum efficiency of 2-3 percent with a forward operating voltage of 3.4-3.7 V. Laser diode structures having a separate confinement heterostructure multiple quantum well configuration were optically and electrically pumped. Photopumping resulted in stimulated emission at 391 nm. Electrically pumped structures resulted in a peak emission at 393 nm and a bandwidth of 12 nm. No lasing was observed.}, note={\urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3002/1/Nitride-based-emitters-on-SiC-substrates/10.1117/12.271027.full ; \urlhttps://research-information.bris.ac.uk/en/publications/nitride-based-emitters-on-sic-substrates-2 ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=918568}, booktitle={Proceedings of SPIE - The International Society for Optical Engineering}, publisher={SPIE-Int. Soc. Opt. Eng.}, author={Edmond, John A. and Kong, Hua-Shuang and Leonard, Michelle and Doverspike, K. and Bulman, Gary E. and Weeks, Warren and Irvine, Kenneth and Vladimir, Dmitriev}, year={1997}, pages={2–10} }
 @inproceedings{skromme_zhao_goldenberg_kong_leonard_bulman_abernathy_pearton_1997, title={Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN}, volume={449}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS}, booktitle={Materials Research Society Symposium - Proceedings}, author={Skromme, B.J. and Zhao, H. and Goldenberg, B. and Kong, H.S. and Leonard, M.T. and Bulman, G.E. and Abernathy, C.R. and Pearton, S.J.}, year={1997}, pages={713–718} }
 @inproceedings{status of nitride based light emitting and laser diodes on sic_1997, place={Boston, MA, USA}, volume={482}, booktitle={Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997}, publisher={MRS}, year={1997}, pages={1169–1178} }
 @article{skromme_zhao_wang_kong_leonard_bulman_molnar_1997, title={Strain determination in heteroepitaxial GaN}, volume={71}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0000723959&partnerID=MN8TOARS}, DOI={10.1063/1.119659}, abstractNote={Residual strains have been evaluated in a variety of GaN layers grown on sapphire or 6H-SiC from wafer curvature at 293 K, which avoids needing to know the unstrained lattice parameters or energy gap of GaN in advance. Estimated strains at 1.7 K are correlated with the energy of the A free exciton to determine its strain dependence. We find that strain-free GaN has an A exciton energy of 3.468±0.002 eV at 1.7 K, and 293 K lattice parameters a=3.1912 A and c=5.1836 A. These values imply that GaN on SiC is frequently under net biaxial compressive stress due to residual lattice mismatch stress, and that several hundred μm thick GaN layers on sapphire and homoepitaxial layers grown on bulk platelets grown at high pressure are both under about 1×10−3 in-plane compressive strain. These conclusions conflict with most previous assumptions.}, note={\urlhttp://ui.adsabs.harvard.edu/abs/1997ApPhL..71..829S/abstract ; \urlhttps://aip.scitation.org/doi/10.1063/1.119659 ; \urlhttp://scitation.aip.org/content/aip/journal/apl/71/6/10.1063/1.119659 ; \urlhttps://asu.pure.elsevier.com/en/publications/strain-determination-in-heteroepitaxial-gan}, number={6}, journal={Applied Physics Letters}, author={Skromme, Brian and Zhao, H. and Wang, D. and Kong, Hua-Shuang and Leonard, Michelle and Bulman, G. and Molnar, Richard J.}, year={1997}, pages={829–831} }
 @inproceedings{kong_leonard_bulman_negley_edmond_1996, place={Pittsburgh, PA, USA}, title={AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates}, volume={395}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0029726099&partnerID=MN8TOARS}, booktitle={Materials Research Society Symposium - Proceedings}, publisher={Mater. Res. Soc.}, author={Kong, Hua-Shuang and Leonard, Michelle and Bulman, Gary and Negley, Gerry and Edmond, John}, year={1996}, pages={903–907} }
 @article{shan_fischer_song_bulman_kong_leonard_perry_bremser_davis_1996, title={Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates}, volume={69}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0030570644&partnerID=MN8TOARS}, DOI={10.1063/1.117876}, abstractNote={We present the results of spectroscopic studies on GaN based epitaxial materials on SiC substrates by metalorganic chemical vapor deposition. A variety of techniques has been used to study the optical properties of GaN epilayers and GaN/AlGaN heterostructures. Sharp spectral structures associated with the intrinsic free excitons were observed by photoluminescence and reflectance measurements from GaN based materials grown on SiC substrates. The residual strain was found to have a strong influence in determining the energies of exciton transitions. Picosecond relaxation studies of exciton decay dynamics suggest that an AlGaN cladding layer with a small mole fraction of AlN can be relatively effective in enhancing the radiative recombination rate for excitons by reducing the density of dislocations and suppressing surface recombination velocity in the GaN active layer for the GaN/AlGaN heterostructure samples.}, note={Publisher: American Inst of Physics}, number={6}, journal={Applied Physics Letters}, author={Shan, W. and Fischer, Arthur J. and Song, Jin-Joo and Bulman, Gary E. and Kong, Hua-Shuang and Leonard, Michelle and Perry, W. G. and Bremser, M. D. and Davis, Robert}, year={1996}, pages={740–742} }
 @inproceedings{bulman_edmond_dmitriev_kong_leonard_irvine_nikolaev_zubrilov_tsvetkov_1996, place={USA}, title={Recent progress in AlGaN-GaN laser structures on 6H-SiC}, volume={2693}, booktitle={Physics and Simulation of Optoelectronic Devices IV, 29 Jan.-2 Feb. 1996}, publisher={SPIE-Int. Soc. Opt. Eng.}, author={Bulman, G.E. and Edmond, J.A. and Dmitriev, V.A. and Kong, H.-S. and Leonard, M.T. and Irvine, K.G. and Nikolaev, V.I. and Zubrilov, A.S. and Tsvetkov, D.V.}, year={1996}, pages={57–63} }
 @inproceedings{bulman_edmond_dmitriev_kong_leonard_irvine_nikolaev_zubrilov_tsvetkov_1996, title={Recent progress in AlGaN/GaN laser structures on 6H-SiC}, volume={2693}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0029766677&partnerID=MN8TOARS}, booktitle={Proceedings of SPIE - The International Society for Optical Engineering}, author={Bulman, Gary E. and Edmond, John A. and Dmitriev, Vladimir A. and Kong, Hua S. and Leonard, M.T. and Irvine, K.G. and Nikolaev, V.I. and Zubrilov, A.S. and Tsvetkov, D.V.}, year={1996}, pages={57–63} }
 @inproceedings{edmond_kong_leonard_bulman_negley_1996, place={Bristol, UK}, title={The state of SiC:GaN-based blue LEDs}, booktitle={Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995}, publisher={IOP Publishing}, author={Edmond, J. and Kong, H.-S. and Leonard, M. and Bulman, G. and Negley, G.}, year={1996}, pages={991–4} }
 @article{karam_sudharsanan_mastrovito_sanfacon_smith_leonard_el-masry_1995, place={USA}, title={Large area depositon of Cd<inf>1-x</inf>Zn<inf>x</inf>Te on GaAs and Si substrates by metalorganic chemical vapor deposition}, volume={24}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0029308954&partnerID=MN8TOARS}, DOI={10.1007/BF02657951}, note={Issue: 5}, number={5}, journal={Journal of Electronic Materials}, author={Karam, N. H. and Sudharsanan, R. and Mastrovito, A. and Sanfacon, M.M. and Smith, F. T. J. and Leonard, Michelle and El-Masry, Nadia A.}, year={1995}, pages={483–489} }
 @inproceedings{bulman_edmond_kong_leonard_dmitriev_irvine_nikolaev_zubrilov_tsvetkov_1995, place={New York, NY, USA}, title={Recent progress in GaN/SiC LEDs and photopumped lasers}, volume={vol.2}, url={https://www.lens.org/020-056-717-964-201}, DOI={10.1109/LEOS.1995.484616}, abstractNote={Stimulated emission from optically pumped GaN layers grown on SiC has been reported over a wide temperature range of 77 to 450 K. However, there has been no report of photopumped lasing in a DH structure grown on SiC. This presentation will discuss recent progress in the development of GaN-based blue LEDs at Cree and photopumped lasing results obtained on GaN-AlGaN DH laser structures fabricated on SiC.}, note={\urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=484616&punumber%3D3480 ; \urlhttp://ieeexplore.ieee.org/iel2/3480/10309/00484616.pdf}, booktitle={LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 30-31 Oct. 1995}, publisher={IEEE}, author={Bulman, Gary E. and Edmond, John A. and Kong, Hua-Shuang and Leonard, Michelle and Dmitriev, Vladimir A. and Irvine, Kenneth and Nikolaev, V. I. and Zubrilov, Andrey and Tsvetkov, D. V.}, year={1995}, pages={100–1} }
 @article{jung_leonard_el-masry_bedair_1995, title={Selenium doping of GalnP by atomic layer epitaxy}, volume={24}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0029253940&partnerID=MN8TOARS}, DOI={10.1007/BF02659624}, note={Place: USA}, number={2}, journal={Journal of Electronic Materials}, author={Jung, D. and Leonard, Michelle and El-Masry, Nadia A. and Bedair, Salah M.}, year={1995}, pages={75–78} }
 @inproceedings{karam_smith_sudharsanan_mastrovito_daly_sanfacon_leonard_el-masry_1994, title={Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates}, volume={2228}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0028722381&partnerID=MN8TOARS}, booktitle={Proceedings of SPIE - The International Society for Optical Engineering}, author={Karam, N.H. and Smith, F.T. and Sudharsanan, R. and Mastrovito, A. and Daly, J.T. and Sanfacon, Michael M. and Leonard, M. and El-Masry, N.A.}, year={1994}, pages={118–129} }
 @inproceedings{karam_smith_sudharsanan_mastrovito_daly_sanfacon_leonard_el-masry_1994, place={USA}, title={Production of low-cost, large area CdZnTe films by MOCVD on GaAs and Si substrates}, volume={2228}, url={https://www.lens.org/027-983-482-761-902}, DOI={10.1117/12.179651}, abstractNote={This paper reports the deposition of (100) GaAs and (111)B CdZnTe layers on silicon substrates up to 4-inch diameter to produce substrates suitable for liquid phase epitaxy (LPE) of high-quality HgCdTe layers. Metalorganic chemical vapor deposition is used for both GaAs and CdZnTe in a reactor capable of deposition onto eighteen 3-inch or ten 4-inch wafers per run. An encapsulation scheme is described that prevents contamination of a Te melt by Si or GaAs during LPE growth. Excellent uniformity of thickness and Zn concentration are achieved in the MOCVD films. The CdZnTe films show only lamellar twins close to the GaAs interface; no twins capable of propagating into the HgCdTe layer are formed. These substrates have been used for the growth of pure HgCdTe films having a dislocation density that is only a factor of 2 to 4 higher than that measured in similar films grown on bulk CdTe substrates.}, note={\urlhttps://ui.adsabs.harvard.edu/abs/1994SPIE.2228..118K/abstract ; \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/2228/1/Production-of-low-cost-large-area-CdZnTe-films-by-metalorganic/10.1117/12.179651.full ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=965668}, booktitle={Producibility of II-VI Materials and Devices, 6-8 April 1994}, author={Karam, Nasser H. and Smith, F. T. J. and Sudharsanan, Rengarajan and Mastrovito, A. and Daly, James T. and Sanfacon, Michael M. and Leonard, Michelle and El-Masry, Nadia A.}, year={1994}, pages={118–29} }
 @article{gong_nakamura_leonard_bedair_el-masry_1992, title={Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy}, volume={21}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-0026931478&partnerID=MN8TOARS}, DOI={10.1007/BF02684204}, note={\urlhttps://link.springer.com/article/10.1007/BF02684204 ; \urlhttps://ui.adsabs.harvard.edu/abs/1992JEMat..21..965G/abstract ; \urlhttp://www.osti.gov/scitech/biblio/5662660-low-temperature-growth-algap-gap-si-substrates-atomic-layer-epitaxy}, number={10}, journal={Journal of Electronic Materials}, author={Gong, J. R. and Nakamura, S. and Leonard, Michelle and Bedair, Salah M. and El-Masry, Nadia A.}, year={1992}, pages={965–970} }
 @article{ramdani_he_leonard_el-masry_bedair_1992, title={Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy}, volume={61}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-22244488316&partnerID=MN8TOARS}, DOI={10.1063/1.108439}, abstractNote={GaP films were epitaxially grown on GaP substrates at a low temperature ∼200 °C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at high temperatures. These results can be explained by excess phosphorus present in these LT films. The resistivity of these films is comparable to that of the semi‐insulating (SI) GaP substrate. These results are considered the first demonstration of high resistivity, semi‐insulating LT GaP films.}, note={Place: USA}, number={14}, journal={Applied Physics Letters}, author={Ramdani, J. and He, Y. and Leonard, Michelle and El-Masry, Nadia A. and Bedair, Salah M.}, year={1992}, pages={1646–1648} }