Michelle Leonard

A, E. D. M. O. N. D. J., H, K. O. N. G., M, D. O. V. E. R. S. P. I. K. E. K., T, L. E. O. N. A. R. D. M., K, H. U. A. S. H. U. A. N. G., M, D. O. R. E. R. S. P. I. K. E. K., & S, K. O. N. G. H. (2001). Group III nitride optoelectronic device formed on a silicon carbide substrate. Retrieved from https://patents.google.com/patent/US6201262B1/en?inventor=Michelle+Turner+Leonard&assignee=Michelle+Turner+Leonard

Bulman, G. E., Kong, H.-S., & Leonard, M. (2000). GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC. Photodetectors: Materials and Devices V, 26-28 Jan. 2000, 3948, 273–282. https://doi.org/10.1117/12.382127

Sheppard, S. T., Doverspike, K., Leonard, M., Pribble, W. L., Allen, S. T., & Palmour, J. W. (2000). Improved 10-GHz operation of GaN/AlGaN HEMTs on silicon carbide. Materials Science Forum, 338. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-17744407378&partnerID=MN8TOARS

Edmond, J. A., Kong, H.-S., Negley, G., Leonard, M., Doverspike, K., Weeks, W., … Carter, C. H. (1998). Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes. In Semiconductors and Semimetals (Vol. 52, pp. 283–306). https://doi.org/10.1016/S0080-8784(08)62849-5

Song, Y.-K., Kuball, M., Nurmikko, A. V., Bulman, G. E., Doverspike, K., Sheppard, S. T., … Edmond, J. A. (1998). Gain characteristics of InGaN/GaN quantum well diode lasers. Applied Physics Letters, 72(12), 1418–1420. https://doi.org/10.1063/1.120607

Song, Y.-K., Kuball, M., Nurmikko, A. V., Bulman, G. E., Doverspike, K., Sheppard, S. T., … Edmond, J. A. (1998). Gain characteristics of InGaN/GaN quantum well diode lasers. Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6, 3-8 May 1998, 224. https://doi.org/10.1109/CLEO.1998.676085

Kuball, M., Song, Y.-K., Nurmikko, A. V., Bulman, G. E., Doverspike, K., Sheppard, S. T., … Edmond, J. (1998). Gain spectroscopy on InGaN/GaN quantum well laser diodes. Conference on Lasers and Electro-Optics Europe - Technical Digest, 66. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0031626264&partnerID=MN8TOARS

Doverspike, K., Bulman, G. E., Sheppard, S. T., Kong, H.-S., Leonard, M., Dieringer, H. M., … Nurmikko, A. V. (1998). InGaN/GaN lasers grown on SiC. Proceedings of SPIE - The International Society for Optical Engineering, 3284, 82–93. https://doi.org/10.1117/12.304434

Edmond, J., Bulman, G., Kong, H. S., Leonard, M., Doverspike, K., Weeks, W., … Nurmikko, A. V. (1998). Nitride-based emitters on SiC substrates. Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997, 264-268(pt 2), 1421–1424. https://doi.org/10.4028/www.scientific.net/MSF.264-268.1421

Brown, J. D., Swindell, J. T., Johnson, M. A. L., Yu, Z., Schetzina, J. F., Bulman, G. E., … Edmond, J. A. (1998). The first nitride laser diode on silicon carbide. Nitride Semiconductors Symposium, 1-5 Dec. 1997, 1179–1184. Warrendale, PA, USA: Mater. Res. Soc.

Shan, W., Xu, S., Little, B. D., Xie, X., Song, J. J., Bulman, G. E., … Krishnankutty, S. (1997). Dynamics of photoexcited carriers in Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN double heterostructures. Journal of Applied Physics, 82(6), 3158–3160. https://doi.org/10.1063/1.366101

Brown, J. D., Swindell, J. T., Johnson, M., Yu, Z., Schetzina, J. F., Bulman, G. E., … Edmond, J. A. (1997). First nitride laser diode on silicon carbide. Proceedings of the 1997 MRS Fall Meeting, December 1, 1997  -  December 4, 1997, 482, 1179–1184. https://doi.org/10.1557/proc-482-1179

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78. https://doi.org/10.1016/S0022-0248(96)01019-6

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy. (1997). Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996, 195–198. Bristol, UK: IOP Publishing.

Johnson, M. A. L., Yu, Z., Boney, C., Rowland, W. H., Hughes, W. C., Cook, J. W., … Edmond, J. A. (1997). MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources. Materials Research Society Symposium - Proceedings, 449, 271–276. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS

Edmond, J. A., Kong, H.-S., Leonard, M., Doverspike, K., Bulman, G. E., Weeks, W., … Vladimir, D. (1997). Nitride-based emitters on SiC substrates. Proceedings of SPIE - The International Society for Optical Engineering, 3002, 2–10. https://doi.org/10.1117/12.271027

Skromme, B. J., Zhao, H., Goldenberg, B., Kong, H. S., Leonard, M. T., Bulman, G. E., … Pearton, S. J. (1997). Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN. Materials Research Society Symposium - Proceedings, 449, 713–718. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS

Status of nitride based light emitting and laser diodes on SiC. (1997). Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997, 482, 1169–1178. Boston, MA, USA: MRS.

Skromme, B., Zhao, H., Wang, D., Kong, H.-S., Leonard, M., Bulman, G., & Molnar, R. J. (1997). Strain determination in heteroepitaxial GaN. Applied Physics Letters, 71(6), 829–831. https://doi.org/10.1063/1.119659

Kong, H.-S., Leonard, M., Bulman, G., Negley, G., & Edmond, J. (1996). AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates. Materials Research Society Symposium - Proceedings, 395, 903–907. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029726099&partnerID=MN8TOARS

Shan, W., Fischer, A. J., Song, J.-J., Bulman, G. E., Kong, H.-S., Leonard, M., … Davis, R. (1996). Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates. Applied Physics Letters, 69(6), 740–742. https://doi.org/10.1063/1.117876

Bulman, G. E., Edmond, J. A., Dmitriev, V. A., Kong, H.-S., Leonard, M. T., Irvine, K. G., … Tsvetkov, D. V. (1996). Recent progress in AlGaN-GaN laser structures on 6H-SiC. Physics and Simulation of Optoelectronic Devices IV, 29 Jan.-2 Feb. 1996, 2693, 57–63. USA: SPIE-Int. Soc. Opt. Eng.

Bulman, G. E., Edmond, J. A., Dmitriev, V. A., Kong, H. S., Leonard, M. T., Irvine, K. G., … Tsvetkov, D. V. (1996). Recent progress in AlGaN/GaN laser structures on 6H-SiC. Proceedings of SPIE - The International Society for Optical Engineering, 2693, 57–63. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029766677&partnerID=MN8TOARS

Edmond, J., Kong, H.-S., Leonard, M., Bulman, G., & Negley, G. (1996). The state of SiC:GaN-based blue LEDs. Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995, 991–994. Bristol, UK: IOP Publishing.

Karam, N. H., Sudharsanan, R., Mastrovito, A., Sanfacon, M. M., Smith, F. T. J., Leonard, M., & El-Masry, N. A. (1995). Large area depositon of Cd<inf>1-x</inf>Zn<inf>x</inf>Te on GaAs and Si substrates by metalorganic chemical vapor deposition. Journal of Electronic Materials, 24(5), 483–489. https://doi.org/10.1007/BF02657951

Bulman, G. E., Edmond, J. A., Kong, H.-S., Leonard, M., Dmitriev, V. A., Irvine, K., … Tsvetkov, D. V. (1995). Recent progress in GaN/SiC LEDs and photopumped lasers. LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 30-31 Oct. 1995, vol.2, 100–101. https://doi.org/10.1109/LEOS.1995.484616

Jung, D., Leonard, M., El-Masry, N. A., & Bedair, S. M. (1995). Selenium doping of GalnP by atomic layer epitaxy. Journal of Electronic Materials, 24(2), 75–78. https://doi.org/10.1007/BF02659624

Karam, N. H., Smith, F. T., Sudharsanan, R., Mastrovito, A., Daly, J. T., Sanfacon, M. M., … El-Masry, N. A. (1994). Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates. Proceedings of SPIE - The International Society for Optical Engineering, 2228, 118–129. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0028722381&partnerID=MN8TOARS

Karam, N. H., Smith, F. T. J., Sudharsanan, R., Mastrovito, A., Daly, J. T., Sanfacon, M. M., … El-Masry, N. A. (1994). Production of low-cost, large area CdZnTe films by MOCVD on GaAs and Si substrates. Producibility of II-VI Materials and Devices, 6-8 April 1994, 2228, 118–129. https://doi.org/10.1117/12.179651

Gong, J. R., Nakamura, S., Leonard, M., Bedair, S. M., & El-Masry, N. A. (1992). Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy. Journal of Electronic Materials, 21(10), 965–970. https://doi.org/10.1007/BF02684204

Ramdani, J., He, Y., Leonard, M., El-Masry, N. A., & Bedair, S. M. (1992). Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy. Applied Physics Letters, 61(14), 1646–1648. https://doi.org/10.1063/1.108439