Nivedita Biswas

Coan, M., Johnson, D., Woo, J. H., Biswas, N., Misra, V., Majhi, P., & Harris, H. R. (2012). Work function extraction of metal gates with alternate channel materials. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2). https://doi.org/10.1116/1.3679412

Biswas, T., & Dutta, R. (2011). Spatially diffuse pathsets for robust routing in ad hoc networks. 2011 ieee global telecommunications conference (globecom 2011). https://doi.org/10.1109/glocom.2011.6133499

Chen, Z., Sarkar, S., Biswas, N., & Misra, V. (2009). Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(7), H561–H566. https://doi.org/10.1149/1.3125722

Suri, R., Lee, B., Lichtenwalner, D. J., Biswas, N., & Misra, V. (2008). Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. APPLIED PHYSICS LETTERS, 93(19). https://doi.org/10.1063/1.3007978

Lee, B., Biswas, N., Novak, S. R., & Misra, V. (2007). Characteristics of Ni/Gd FUSI for NMOS gate electrode applications. IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557. https://doi.org/10.1109/LED.2007.897889

Chen, B., Biswas, N., & Misra, V. (2006). Electrical and physical analysis of MoTa alloy for gate electrode applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417–G419. https://doi.org/10.1149/1.2180710

Chen, B., Jha, R., Lazar, H., Biswas, N., Lee, J., Lee, B., … Misra, V. (2006). Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230. https://doi.org/10.1109/LED.2006.871184

Ravindran, R., Gangopadhyay, K., Gangopadhyay, S., Mehta, N., & Biswas, N. (2006). Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles. Applied Physics Letters, 89(26).

Biswas, N., Gurganus, J., Misra, V., Yang, Y., & Stemmer, S. (2005). Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. APPLIED PHYSICS LETTERS, 86(2). https://doi.org/10.1063/1.1849850

Biswas, N., Gurganus, J., & Misra, V. (2005). Work function tuning of nickel silicide by co-sputtering nickel and silicon. APPLIED PHYSICS LETTERS, 87(17). https://doi.org/10.1063/1.2115072